Secondary Electron Signal Research Articles

Phase and amplitude patterns in DySEM mappings of vibrating microstructures

We use a dynamic scanning electron microscope (DySEM) to analyze the movement of oscillating micromechanical structures. A dynamic secondary electron (SE) signal is recorded and correlated to the oscillatory excitation of scanning force microscope (SFM) cantilever by means of lock-in amplifiers. We show, how the relative phase of the oscillations modulate the resulting real part and phase pictures of the DySEM mapping. This can be used to obtain information about the underlying oscillatory dynamics. We apply the theory to the case of a cantilever in oscillation, driven at different flexural and torsional resonance modes. This is an extension of a recent work (Schröter et al 2012 Nanotechnology 23 435501), where we reported on a general methodology to distinguish nonlinear features caused by the imaging process from those caused by cantilever motion.

球面収差補正器を搭載したSTEMによる原子分解能二次電子像

We innovated the secondary electron (SE) imaging technology with an aberration-corrected scanning transmission electron microscope (STEM). As a result, atomic resolution SE imaging has been achieved for the first time. We have successfully observed isolated single uranium atoms on carbon thin films using the SE signal. In addition, atomic-resolutionSE images were obtained not only from specimens containing heavy elements like uranium but also from those composed of light elements such as silicon and carbon. Because the SE signals are from the upper surface of specimen, imaging atomic lattice for thick specimens of 1 µm was demonstrated. This unique technology provides unprecedented application capabilities including 1) simultaneous atomic-resolution SE/STEM imaging to reveal topographical surface and bulk structure ; 2) simplified specimen preparation requirement for atomic-resolution electron microscopy ; and 3) imaging atomic structure for thicker than 1 µm specimens without having to use a million volt electron microscope.

A facile method to observe graphene growth on copper foil

A novel scanning electron microscope (SEM) method is presented for high contrast identification of each layer of pyramidal graphene domains grown on copper. We obtained SEM images by combining the advantages of the high resolution property of the secondary electron signal and the elemental sensitivity of the backscattering electron signal. Through this method, we investigated the difference in the growth mechanisms of mono-layer and few-layer graphene. Due to different lattice mismatches, both the surface adsorption process and the epitaxial growth process existed under the atmospheric growth conditions. Moreover, the copper oxidation process can be easily discovered. It is obvious from the SEM images that the graphene greatly delayed the oxidation process of the copper surface. Finally, the nucleation and growth speed of graphene domains was found to depend on the linear array distribution of surface ledges and terraces of annealed rolled copper foil. This result explains the linear rows of graphene during the growth process and accords with theoretical results.

FIB/SEM tomography with TEM-like resolution for 3D imaging of high-pressure frozen cells

Focused ion beam/scanning electron microscopy (FIB/SEM) tomography is a novel powerful approach for three-dimensional (3D) imaging of biological samples. Thereby, a sample is repeatedly milled with the focused ion beam (FIB) and each newly produced block face is imaged with the scanning electron microscope (SEM). This process can be repeated ad libitum in arbitrarily small increments allowing 3D analysis of relatively large volumes such as eukaryotic cells. High-pressure freezing and freeze substitution, on the other hand, are the gold standards for electron microscopic preparation of whole cells. In this work, we combined these methods and substantially improved resolution by using the secondary electron signal for image formation. With this imaging mode, contrast is formed in a very small, well-defined area close to the newly produced surface. By using this approach, small features, so far only visible in transmission electron microscope (TEM) (e.g., the two leaflets of the membrane bi-layer, clathrin coats and cytoskeletal elements), can be resolved directly in the FIB/SEM in the 3D context of whole cells.

Monte Carlo Simulation of CD‐SEM Images for Linewidth and Critical Dimension Metrology

In semiconductor industry, strict critical dimension control by using a critical dimension scanning electron microscope (CD-SEM) is an extremely urgent task in near-term years. A Monte Carlo simulation model for study of CD-SEM image has been established, which is based on using Mott's cross section for electron elastic scattering and the full Penn dielectric function formalism for electron inelastic scattering and the associated secondary electron (SE) production. In this work, a systematic calculation of CD-SEM line-scan profiles and 2D images of trapezoidal Si lines has been performed by taking into account different experimental factors including electron beam condition (primary energy, probe size), line geometry (width, height, foot/corner rounding, sidewall angle, and roughness), material properties, and SE signal detection. The influences of these factors to the critical dimension metrology are investigated, leading to build a future comprehensive model-based library.

Do SEII Electrons Really Degrade SEM Image Quality?

Generally, in scanning electron microscopy (SEM) imaging, it is desirable that a high-resolution image be composed mainly of those secondary electrons (SEs) generated by the primary electron beam, denoted SE(I) . However, in conventional SEM imaging, other, often unwanted, signal components consisting of backscattered electrons (BSEs), and their associated SEs, denoted SE(II) , are present; these signal components contribute a random background signal that degrades contrast, and therefore signal-to-noise ratio and resolution. Ideally, the highest resolution SEM image would consist only of the SE(I) component. In SEMs that use conventional pinhole lenses and their associated Everhart-Thornley detectors, the image is composed of several components, including SE(I) , SE(II) , and some BSE, depending on the geometry of the detector. Modern snorkel lens systems eliminate the BSEs, but not the SE(II) s. We present a microfabricated diaphragm for minimizing the unwanted SE(II) signal components. We present evidence of improved imaging using a microlithographically generated pattern of Au, about 500 nm thick, that blocks most of the undesired signal components, leaving an image composed mostly of SE(I) s. We refer to this structure as a "spatial backscatter diaphragm."

Imaging and Nanofabrication With the Helium Ion Microscope of the Van Leeuwenhoek Laboratory in Delft

Although helium ion microscopy (HIM) was introduced only a few years ago, many new application fields are emerging. The connecting factor between these novel applications is the unique interaction of the primary helium ion beam with the sample material at and just below its surface. In particular, the HIM secondary electron signal stems from an area that is extremely well localized around the point of incidence of the primary beam. This makes the HIM well suited for both high-resolution imaging and high-resolution nanofabrication. Another advantage in nanofabrication is the low ion backscattering fraction, which leads to a weak proximity effect. The subnanometer probe size and the unique beam-materials interactions have opened new areas of research. This review presents a selection of studies conducted on a single instrument. The selection encompasses applications ranging from imaging to nanofabrication and from fundamental academic research to applied industrial developments.

Measurement of semiconductor surface potential using the scanning electron microscope

We calibrate the secondary electron signal from a standard scanning electron microscope to voltage, yielding an image of the surface or near-surface potential. Data on both atomically abrupt heterojunction GaInP/GaAs and diffused homojunction Si solar cell devices clearly show the expected variation in potential with position and applied bias, giving depletion widths and locating metallurgical junctions to an accuracy better than 10 nm. In some images, distortion near the p-n junction is observed, seemingly consistent with the effects of lateral electric fields (patch fields). Reducing the tube bias removes this distortion. This approach results in rapid and straightforward collection of near-surface potential data using a standard scanning electron microscope.

Optimizing Morphology and Structure with Multi-Signal FIB/SEM Tomography

ABSTRACTFocused ion beam (FIB) milling coupled with scanning electron microscopy (SEM) on the same platform enables 3D microstructural analysis of structures using FIB for serial sectioning and SEM for imaging. Since FIB milling is a destructive technique, the acquisition of multiple signals from each slice is desirable. The feasibility of collecting both an inlens backscattered electron (BSE) signal and an inlens secondary electron (SE) simultaneously from a single scan of the electron beam from each FIB slice is demonstrated. The simultaneous acquisition of two different SE signals from two different detectors (inlens vs. Everhart-Thornley (ET) detector) is also possible. Obtaining multiple signals from each FIB slice with one scan increases the acquisition throughput. In addition, optimization of microstructural and morphological information from the target is achieved using multi-signals. Examples of multi-signal FIB/SEM tomography from a dental implant will be provided where both material contrast from the bone/ceramic coating/Ti substrate phases and porosity in the ceramic coating will be characterized.

Secondary-electron signal level measurements of self-assembled monolayers for spatial-phase-locked electron-beam lithography

The secondary-electron signal levels of eight thiophenol-based self-assembled monolayers (SAMs) on gold (Au) are measured and compared against the signal level from bare gold between energies 1 and 2 keV. To enable accurate comparison, scanning electron micrographs of SAMs are taken with a Faraday cup and a reference sample. Most SAMs-on-gold produce a lower signal level than that from bare gold, with the exception of 3-methylthiophenol. Highest occupied molecular orbital and lowest unoccupied molecular orbital levels of the thiophenol derivatives are calculated and compared against the signal levels. Signal levels from bis[3-(triethoxysilyl)propyl]tetrasulfide, (4-chlorophenyl)-triethoxysilane, and amino-propyl-triethoxy-silane on titanium (Ti) and aluminum (Al) are also measured. All three SAMs on aluminum have lower signal levels than bare Al but this effect is reversed for the case of Ti, where SAMs deposited on Ti result in a higher signal level. A hybrid Ti/Al fiducial grid is fabricated and the point-spread function at 2 keV in the underlying resist is investigated.

Resolution Limits of Secondary Electron Dopant Contrast in Helium Ion and Scanning Electron Microscopy

As the miniaturization of semiconductor devices continues, characterization of dopant distribution within the structures becomes increasingly challenging. One potential solution is the use of the secondary electron signal produced in scanning electron (SEMs) or helium ion microscopes (HeIMs) to image the changes in electrical potential caused by the dopant atoms. In this article, the contrast mechanisms and resolution limits of secondary electron dopant contrast are explored. It is shown that the resolution of the technique is dependent on the extent of electrical potential present at a junction and that the resolution of dopant contrast can be improved in the HeIM after an in-situ plasma cleaning routine, which causes an oxide to form on the surface altering the contrast mechanism from electrical potential to material contrast.

집속 전자 빔 장치에서 스캔 주파수에 따른 실시간 디지털 필터 설계에 관한 연구

To acquire images in a thermionic-scanning electron-beam system, a scanning unit is needed to control the electron beam emitted from the tungsten filament source. In scanning the electron beam on the solid surface, the signalto-noise ratio depends on the scanning frequency. We used a digital filter to reduce noise by analyzing the real-time frequency of a secondary electron signal. The noise and the true image signal were well separated. We designed the digital filter via a DSP floating-point operation, and the noise elimination resulted in enhanced image quality in a highresolution mode.

Nano-engineering with a focused helium ion beam

ABSTRACTAlthough Helium Ion Microscopy (HIM) was introduced only a few years ago, many new application fields are budding. The connecting factor between these novel applications is the unique interaction of the primary helium ion beam with the sample material at and just below its surface. In particular, the HIM secondary electron (SE) signal stems from an area that is very well localized around the point of incidence of the primary beam. This makes the HIM well-suited for both high-resolution imaging as well as high resolution nanofabrication. Another advantage in nanofabrication is the low ion backscattering fraction, leading to a weak proximity effect. The lack of a quantitative materials analysis mode (like EDX in Scanning Electron Microscopy, SEM) and a relatively low beam current as compared to the SEM and the Gallium Focused Ion Beam are the present drawbacks of the HIM.

Atomic imaging using secondary electrons in a scanning transmission electron microscope: Experimental observations and possible mechanisms

We report detailed investigation of high-resolution imaging using secondary electrons (SE) with a sub-nanometer probe in an aberration-corrected transmission electron microscope, Hitachi HD2700C. This instrument also allows us to acquire the corresponding annular dark-field (ADF) images both simultaneously and separately. We demonstrate that atomic SE imaging is achievable for a wide range of elements, from uranium to carbon. Using the ADF images as a reference, we studied the SE image intensity and contrast as functions of applied bias, atomic number, crystal tilt, and thickness to shed light on the origin of the unexpected ultrahigh resolution in SE imaging. We have also demonstrated that the SE signal is sensitive to the terminating species at a crystal surface. A possible mechanism for atomic-scale SE imaging is proposed. The ability to image both the surface and bulk of a sample at atomic-scale is unprecedented, and can have important applications in the field of electron microscopy and materials characterization.

Analysis of subsurface beam spread and its impact on the image resolution of the helium ion microscope

By virtue of its extremely bright gaseous field ion source, the ORION™ helium ion microscope has demonstrated a probe size smaller than 0.3 nm, when operating the microscope in its (typical) high-resolution imaging mode, i.e., surface imaging with secondary electron signal. The authors combined SRIM-models of beam spread in the sample with models for secondary electron signal generation and escape, for a wide range of beam energies and sample materials, in order to calculate the effect of beam spread on image resolution. It was found that the effect on resolution is larger for sample materials with higher atomic numbers, and that the effect is inversely proportional to beam energy. The magnitude of the calculated effect on image resolution ranges from 0.005 to 0.08 nm, which is typically an order of magnitude smaller than the currently experimentally measured image resolution of the helium ion microscope.

New Strategies for e‐Beam Characterization of Catalysts

AbstractBuilding on the success of aberration correction and the construction of in situ reaction chambers, electron microscopy is poised to make fresh advances in catalyst characterization. More profitable use should be made of photons both as input drivers and as output signals. Secondary electron imaging can provide extra information about the support structure. When collected in coincidence with primary beam energy losses, the secondary electron signal may even open the way to surface barrier height measurement at surface facets on individual nanoparticles.

Novel Electron Tomographic Methods to Study the Morphology of Keratin Filament Networks

The three-dimensional (3D) keratin filament network of pancreatic carcinoma cells was investigated with different electron microscopical approaches. Semithin sections of high-pressure frozen and freeze substituted cells were analyzed with scanning transmission electron microscope (STEM) tomography. Preservation of subcellular structures was excellent, and keratin filaments could be observed; however, it was impossible to three-dimensionally track the individual filaments. To obtain a better signal-to-noise ratio in transmission mode, we observed ultrathin sections of high-pressure frozen and freeze substituted samples with low-voltage (30 kV) STEM. Contrast was improved compared to 300 kV, and individual filaments could be observed. The filament network of samples prepared by detergent extraction was imaged by high-resolution scanning electron microscopy (SEM) with very good signal-to-noise ratio using the secondary electron signal and the 3D structure could be elucidated by SEM tomography. In freeze-dried samples it was possible to discern between keratin filaments and actin filaments because the helical arrangement of actin subunits in the F-actin could be resolved. When comparing the network structures of the differently prepared samples, we found no obvious differences in filament length and branching, indicating that the intermediate filament network is less susceptible to preparation artifacts than the actin network.

In-situ monitoring of gas-assisted focused ion beam and focused electron beam induced processing

The state of the art of several in-situ monitoring techniques for gas assisted focused ion beam and focused electron beam induced processing (FIBIP and FEBIP) is presented. The monitoring techniques discussed comprise (a) the stage current and secondary electron signal for topographic information, (b) mass sensors to determine process yields, deposit density, molecule coverage and adsorption, (c) electrical resistance measurements, (d) reflectometry, (e) annular dark field sensing, and (f) SEM integrated mechanical measurements.

Comparison of multilayered nanowire imaging by SEM and Helium Ion Microscopy

The helium ion microscope (HeIM) is capable of probe sizes smaller than SEM and, with intrinsically small ion/sample interaction volumes, may therefore potentially offer higher spatial resolution secondary electron (SE) imaging of nanostructures. Here 55 nm diameter CoPt/Pt multilayered nanowires have been imaged by HeIM, SEM and TEM. It is found that there is an increased resolution of nanowire surface topography in HeIM SE images compared to SEM, however there is a reduction of materials contrast of the alternating Pt and CoPt layers. This can be attributed to the increased contribution of surface contamination layers to the ion-induced SE signal, and carbon is also observed to grow on the nanowires under prolonged HeIM scanning.

Three‐dimensional analysis of intermediate filament networks using SEM tomography

We identified tomographic reconstruction of a scanning electron microscopy tilt series recording the secondary electron signal as a well-suited method to generate high-contrast three-dimensional data of intermediate filament (IF) networks in pancreatic cancer cells. Although the tilt series does not strictly conform to the projection requirement of tomographic reconstruction, this approach is possible due to specific properties of the detergent-extracted samples. We introduce an algorithm to extract the graph structure of the IF networks from the tomograms based on image analysis tools. This allows a high-resolution analysis of network morphology, which is known to control the mechanical response of the cells to large-scale deformations. Statistical analysis of the extracted network graphs is used to investigate principles of structural network organization which can be linked to the regulation of cell elasticity.