Progress in the use of Auger electron spectroscopy is discussed. Specifically limits to spatial resolution in the scanning Auger microprobe resulting from backscattered electrons is illustrated. Determination of chemical state by peak shapes and energies are discussed along with the use of correction factors in quantitating Auger electron data. Finally, the use of inverse Laplace transforms of angle-resolved electron spectroscopy data to generate composition depth profiles of sputtered GaAs is illustrated. It is concluded that Gibbsian surface segregation during sputtering caused depletion of As near the surface of GaAs.