Sb Films Research Articles

Structural, Electrical, and Optical Properties of SnO2:Sb Films Prepared on Flexible Substrate at Room Temperature

Structural, Electrical, and Optical Properties of SnO₂:Sb Films Prepared on Flexible Substrate at Room Temperature

Crystallization behaviors of an ultra-thin Ga–Sb film

Upon decreasing ultra-thin Ga16Sb84 films from 10 to 3 nm, the exponential increase in crystallization temperature and electrical resistance ratio are attributed to increased specific interface-energies and inhomogeneous interfacial strain at the interfaces. The specific interface-energies and strain also stabilize the Sb(Ga) phase and suppress phase-separation of the GaSb phase.

Sensing properties of sprayed antimony doped tin oxide thin films: Solution molarity

Transparent conductive thin films of nanocrystalline Sb:SnO 2 have been deposited onto preheated glass substrates by using spray pyrolysis technique. The effect of the solution molarity on structural, morphological, optoelectronic properties of Sb:SnO 2 films has been investigated. XRD study reveals that films are polycrystalline with tetragonal crystal structure having average crystallite size about 20 nm. The compact and homogeneous grains are seen in FESEM images. The BEs of Sn 3d 5/2 for all samples show the Sn 4+ bonding state for SnO 2. The BEs of Sb 3d 5/2 are in the range of 530.6–530.9 eV, indicating that all antimony detected is in a pentavalent state (Sb 5+). Transparency of films in the visible region decreases with increase in precursor concentration. Photoluminescence study shows the strong violet and weak orange emission. The sensing properties of the Sb:SnO 2 films for acetone, ethanol and LPG with operating temperature and gas concentration have been investigated.

Structure and Electrochemical Properties of Li<sub>1-X</sub>Ni<sub>0.5</sub>Mn<sub>0.5</sub>O<sub>2</sub> Thin Film Using Different Raw Material by Sol-Gel Method

Lithium-deficient thin films Li1-xNi0.5Mn0.5O2 were synthesized by sol-gel method using metal lithium, manganese and nickel acetate salts and acetylacetonate salts as started materials, respectively. The microstructures and electrochemical performance of Li1-xNi0.5Mn0.5O2 thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and galvanostatic charge–discharge measurements. Lithium-deficient was due to the formation of spinel LiNi0.5Mn1.5O4 impurities. The lithium-deficient was more seriously for SB film due to contain crystal water in the acetate salts. The raw material had great influence on the morphology of the films. The SA film had better electrochemical properties than that of SB film. The first discharge capacity was about 51 μAh/cm2-μm. After 40 cycles, 76% of its discharge capacity can be retained. The metal acetylacetonate salts without crystal water are more suitable for the preparation of LiNi0.5Mn0.5O2 film by sol-gel method.

Ultraviolet-shielding and conductive double functional films coated on glass substrates by sol-gel process

Ultraviolet-shielding and conductive double functional films were composed of CeO 2-TiO 2 film and SnO 2:Sb film deposited on glass substrates using sol-gel process. Ce(NO 3) 3·6H 2O and Ti(C 4H 9O 4), SnCl 4 and SbCl 3 were used as precursors of the two different functional films respectively. The CeO 2-TiO 2 films were deposited on glass substrates by sol-gel dip coating method, and then the SnO 2: Sb films with different thickness were deposited on the pre-coated CeO 2-TiO 2 thin film glass substrates, finally, the substrates coated with double functional films were annealed at different temperatures. The optical and electrical properties of the CeO 2-TiO 2 films and the double films were measured by UV-Vis spectrometer and four probe resistance measuring instrument. The crystal structures and surface morphology of the films were characterized using XRD and optical microscope, respectively. The obtained results show that the ultraviolet-shielding rate of the glass substrates with CeO 2-TiO 2 films is not less than 90%, and transmittance in visible lights can reach 65%. With the thickness of the SnO 2:Sb film increasing, its conductivity became better, and the surface resistance is about 260 Ω/□ when the SnO 2:Sb films were deposited 11 cycles of the dip on the pre-coated CeO 2-TiO 2 glass. The ultraviolet-shielding rate of the glass substrates with double functional films is higher than 97%, and the peak transmittance in the visible lights is 72%. Additionally, with increasing the heat treatment time, the Na + of the glass substrates diffuses into the films, resulting in the particle size of SnO 2 crystal smaller.

Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (0 0 1) GaAs using MBE

We characterize structural and magnetic properties of the dilute magnetic semiconductor (In,Mn)Sb grown on GaAs (001) by molecular beam epitaxy. The films have surface features consisting of dense orthogonally oriented strain-driven hillocks. In addition, triangularly shaped hillocks, presumed to be MnSb clusters, are observed with diameters in the range of 200nm. The density and size of these triangular hillocks depend strongly on the Mn content. X-ray scattering shows that the presence of Mn in the InSb films decreases the average lattice constant as well as the degree of relaxation of the (In,Mn)Sb films. The distribution of Mn is also investigated by cross-sectional transmission electron microscopy. Two regions are observed: a (In,Mn)Sb film with small defect density and MnSb clusters on the surface. Magnetization measurements indicate that both the (In,Mn)Sb alloy as well as the MnSb inclusions are ferromagnetic.

Low temperature sputter deposition of SnOx:Sb films for transparent conducting oxide applications

SnOx:Sb films have been prepared by reactive dc magnetron sputtering from a metallic target, with the aim of evaluating the potential of SnOx:Sb as an attractive low-cost alternative to In2O3:Sn (ITO) for TCO applications. The deposition was performed without any additional heating of the substrates. The films were subsequently analysed regarding their optical, electrical and structural properties. Our results show that there is only a narrow process window for the sputter deposition of transparent and conducting tin oxide films at low temperature. A sharp minimum in resistivity of 4.9mΩcm is observed at an oxygen content of approximately 17% in the sputtering gas. Under these deposition conditions, the SnO2:Sb films turn out to be both highly transparent and crystalline. At lower oxygen content (10–15%) the SnOx:Sb films are substoichiometric, as revealed by Rutherford backscattering, and show a low transmission and high resistivity due to numerous defects and the presence of the SnO phase. At higher oxygen content (>17%) excess oxygen is incorporated into the films, which is attributed to an increase of oxygen ion bombardment. This leads to a degradation of the electrical properties and a decrease of the density of the films, whilst the optical transmittance slightly improves.

One-step electrochemical preparation of the ternary (Bi xSb 1− x) 2Te 3 thin films on Au(1 1 1): Composition-dependent growth and characterization studies

This study reports on the synthesis of ternary semiconductor (Bi x Sb 1− x ) 2Te 3 thin films on Au(1 1 1) using a practical electrochemical method, based on the simultaneous underpotential deposition (UPD) of Bi, Sb and Te from the same solution containing Bi 3+, SbO +, and HTeO 2 + at a constant potential. The thin films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and reflection absorption-FTIR (RA-FTIR) to determine structural, morphological, compositional and optic properties. The ternary thin films of (Bi x Sb 1− x ) 2Te 3 with various compositions (0.0 ≤ x ≤ 1.0) are highly crystalline and have a kinetically preferred orientation at (0 1 5) for hexagonal crystal structure. AFM images show uniform morphology with hexagonal-shaped crystals deposited over the entire gold substrate. The structure and composition analyses reveal that the thin films are pure phase with corresponding atomic ratios. The optical studies show that the band gap of (Bi x Sb 1− x ) 2Te 3 thin films could be tuned from 0.17 eV to 0.29 eV as a function of composition.

Surface- and edge-states in ultrathin Bi–Sb films

Employing first-principles calculations, we studied the electronic structure of ultrathin Bi–Sb films, focusing on the appearance of surface or edge states that are topologically protected. Our calculations show that in ordered structures the Bi–Sb bonds are quite strong, forming well-defined double layers that contain both elements. We find surface states appearing on the (111) surface of a thin film of layerwise ordered Bi–Sb compound, while thin films in (110) orientation are insulating. In the gap of this insulator, edge states can be found in a (110)-oriented ribbon in the A17 (black phosphorus) structure. While these states are strongly spin polarized, their topological properties are found to be trivial. In all structures, we investigate the influence of spin–orbit coupling and analyze spin polarization of the states at the boundaries of the material.

Surface morphology and photoluminescence studies of Sb-doped ZnO layers grown using MOCVD

ZnO and ZnO:Sb films were deposited using low pressure metal organic chemical vapor deposition on C- and R-oriented sapphire and O-polar ZnO substrates. Surface morphologies were studied using scanning electron microscopy. Whereas ZnO films grown on C-sapphire show a rough surface and hexagonal rods, the doped ZnO:Sb layers exhibit a relatively smoother surface, indicating a possible surfactant effect of antimony. The secondary ion mass spectrometry measurements permit to determine the antimony profile in the doped layers. Sb concentrations from 10 18 to 10 20 at/cm 3 were measured, depending on the growth conditions and substrate nature. Photoluminescence spectra exhibit donor-acceptor pair emission at 3.22 eV.

Phase transformation in Mg–Sb thin films

Thermal and electrical properties of Mg–Sb films were investigated for evaluation as phase-change memory materials. Electrical resistance of as-deposited amorphous Mg–Sb films decreases with increasing temperature until an abrupt drop at the crystallization temperature, with a total of 4 orders-of-magnitude resistance change. The crystallization temperatures increases from 140 °C to 190 °C as decreasing Sb content from 72.4 to 45.9 at.%, and the melting temperature remains at around 577 °C. The temperature corresponding to 10-year data-retention is 94 °C (54.6 at.% Sb) and 128 °C (41.3 at.% Sb), respectively. Optimal compositions are proposed to be 40 to 50 at.% Sb.

Structural and magnetic properties of Co–Mn–Sb thin films

Thin Co–Mn–Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co–Mn–Sb/Al–O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co–Mn–Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co–Mn–Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

57Fe implantation effect of Sb doped SnO2 films

We implanted 57Fe with 5x1016 ions/cm2 into SnO2 films containing 0.1% Sb and 3% Sb at the substrate temperature of 500°C in vacuum. As a result, four kinds of subspectra were observed in the depth selective CEM spectra by using a back scattered type of gas counter. Two doublets are assigned to paramagnetic Fe3+ Fe2+ species and two sextets are assigned to site A and site B of magnetite. Magnetite formation was found to prefer the top layer, whereas paramagnetic Fe2+ species were included in the deeper layer of the films. SnO2 (with 0.1% and 3% Sb) films doped with 5x1016 57Fe ions/cm2 at 500°C and post-annealed at 400°C for 6 h showed bulk ferromagnetism at room temperature although the 57Fe implanted SnO2 (3% Sb) film showed smaller Kerr effect than the 57Fe implanted SnO2 (0.1% Sb) film. This phenomenon was attributed mainly to the amount of magnetite in the as prepared samples and to the maghemite in the post-annealed samples, respectively, in addition to magnetic defects.

The Big Combo

Book Review| March 01 2010 The Big Combo Driven to Darkness: Jewish Émigré Directors and the Rise of Film Noir By Vincent Brook Rutgers University Press, 2009 256 pp./$26.95 (sb)Film Noir and the Cinema of Paranoia By Wheeler Winston Dixon Rutgers University Press, 2009 192 pp./$24.95 (sb) David Kipen David Kipen DAVID KIPEN is the author of The Schreiber Theory: A Radical Rewrite of American Film History (2006) and film critic for The Bob Edwards Show on SiriusXM satellite radio. He has programmed film series around screenwriters Peter Stone and Nicholas Kazan, as well as the films and critics of Los Angeles. Search for other works by this author on: This Site PubMed Google Scholar Afterimage (2010) 37 (5): 39–40. https://doi.org/10.1525/aft.2010.37.5.39 Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Facebook Twitter LinkedIn MailTo Tools Icon Tools Get Permissions Cite Icon Cite Search Site Citation David Kipen; The Big Combo. Afterimage 1 March 2010; 37 (5): 39–40. doi: https://doi.org/10.1525/aft.2010.37.5.39 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAfterimage Search This content is only available via PDF. © 2010 Afterimage/Visual Studies Workshop, unless otherwise noted. Reprints require written permission and acknowledgement of previous publication in Afterimage.2010 Article PDF first page preview Close Modal You do not currently have access to this content.

B133 SBA-16薄膜内部のイオン移動現象(OS-4:マイクロ・ナノ熱工学(I))

Ion transport in mesoporous silica SB A-16 films was investigated. Thin films of SB A-16 were synthesized on Si substrates via dip-coating method. SEM analysis revealed that SBA-16 films with highly ordered 3D-cubic pore structure were uniformly coated on Si substrates. After the mesopores of a SBA-16 film were filled with pure water, the ionic current passing through the pores was measured by applying electric field. The measured current-voltage (I-V) curve was non-liner and the measured current was larger than the theoretical prediction. This study discusses the relationship between the non-liner I-V curve and the ionic flow inside ink-bottle shaped pores.

Electronic structure of substitutional Mn in epitaxial In0.965Mn0.035Sb film

The magnetic and electronic structure of Mn in In0.965Mn0.035Sb ferromagnetic semiconductor thin film was studied by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. Comparison with atomic multiplet calculations suggests that manganese substitutes on sites with tetrahedral symmetry. Strong magnetic dichroism was observed from 5 to 300 K, at an applied field of 2 T. The temperature dependence of dichroism indicates presence of two magnetic Mn species having very similar spectral features. A high temperature species dominates the dichroic response over 50–300 K and a low temperature species is observed below 50 K.

Development of a TiO 2 modified optical fiber electrode and its incorporation into a photoelectrochemical reactor for wastewater treatment

Electrochemical advanced oxidation processes (EAOPs) are used to chemically burn non biodegradable complex organic compounds that are present in polluted effluents. A common approach involves the use of TiO 2 semiconductor substrates as either photocatalytic or photoelectrocatalytic materials in reactors that produce a powerful oxidant (hydroxyl radical) that reacts with pollutant species. In this context, the purpose of this work is to develop a new TiO 2 based photoanode using an optic fiber support. The novel arrangement of a TiO 2 layer positioned on top of a surface modified optical fiber substrate, allowed the construction of a photoelectrochemical reactor that works on the basis of an internally illuminated approach. In this way, a semi-conductive optical fiber modified surface was prepared using 30 μm thickness SnO 2:Sb films on which the photoactive TiO 2 layer was electrophoretically deposited. UV light transmission experiments were conducted to evaluate the transmittance along the optical fiber covered with SnO 2:Sb and TiO 2 showing that 43% of UV light reached the optical fiber tip. With different illumination configurations (external or internal), it was possible to get an increase in the amount of photo-generated H 2O 2 close to 50% as compared to different types of TiO 2 films. Finally, the electro-Fenton photoelectrocatalytic Oxidation process studied in this work was able to achieve total color removal of Azo orange II dye (15 mg L −1) and a 57% removal of total organic carbon (TOC) within 60 min of degradation time.

Narrow‐gap ferromagnetic semiconductors (In,Mn)Sb on GaAs (001): growth and properties

AbstractNarrow‐gap (In,Mn)Sb layers, which offer prospects for infrared spin‐photonics, were grown on GaAs (001) substrates using a Riber Compact 21T MBE system and a Veeco valved cracker cell for Sb. Samples consisting 0.4 μm (In,Mn)Sb/GaAs with different Mn content in the range of 1% were examined in this study in respect of their structural, magnetotransport and magnetization properties. It is found that Mn decreases the lattice constant as well as the degree of relaxation of (In,Mn)Sb films. The hole concentration increases with increasing Mn concentration resulting increased acceptor concentration and decreased resistivity.The magnetoresistance is found to be sensitive to the Mn concentration. The temperature‐dependent resistivity data at lower than 30 K show an increased resistivity with decreasing temperature, suggesting the insulating behavior of the samples. In addition, magnetization measurements reveal distinct hysteresis loops, indicating the ferromagnetic properties. The measured saturation magnetization values of the films are found to be dependent on Mn concentration. The Curie temperature is estimated to be below 50 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures

This study examined the effects of the composition and microstructure on the electric resistivity of Ge-doped Sb phase change thin films grown by cyclic plasma enhanced chemical vapor deposition. Ge and Sb layers were deposited sequentially to form either a GexSby mixture or Ge/Sb nanolaminated films. While the resistivity of the nanolaminated films was higher, the GexSby mixture showed a lower resistivity than the pure Sb film. This can be explained by the increase in carrier density of the alloy, as confirmed by first-principles calculations. An abrupt change in resistance accompanying a phase change was observed at ∼210 °C.

Frozen-in vacancies in PVD-Cu films with improved high-pressure reflowability studied using a slow positron beam

Recently, a new process has been proposed for fabricating a LSI interconnection; filling trenches and via holes with Cu using high-pressure annealing treatment. It is already known that a Cu film produced by physical vapor deposition (PVD) has a lower reflowability compared to a Cu film produced by electrochemical deposition (ECD). Additionally, it has also been recognized that the addition of Sb to the PVD-Cu film improves the reflowability. However, the factors responsible for the reflowability of Cu films have not yet been studied. In this work, we evaluated a PVD pure-Cu film and a PVD Cu-0.5at%Sb film by using a slow positron beam. Addition of Sb led to the introduction of lattice defects in the as-deposited film. These defects that were observed in the PVD-CuSb dilute alloy film were identified as frozen-in vacancies that were produced during deposition.