Chalcogenide perovskites are expected to be promising thermoelectric materials, since they not only possess efficient carrier transport and defect tolerance, but also demonstrate unique advantages of high thermodynamic stability, eco-friendly and earth-abundant constituents. Especially, theoretical reports have predicted their “glass-like” thermal conductivities. However, experimental investigation on thermoelectric performances of chalcogenide perovskite BaZrS3 is extremely scarce due to the difficulty in preparing high-quality bulk samples, which originates from the brittle nature, high melting point, and the large difference in melting points between Ba/S and Zr. In this work, pure phase BaZrS3 bulks with high relative density reaching 100 % are realized by optimized sulfurization from low-cost BaZrO3 powders combined with fast spark plasma sintering. A maximum zT value of 0.37 at 623 K in BaZrS3 bulks is achieved, which is the record-high value among the reported sulfide, halide, and hybrid perovskite materials. A room-temperature electron mobility up to 385 cm2V−1s−1 is among the highest values for perovskites due to the high phase purity, dense morphology and corner-sharing ZrS6 octahedral three-dimensional network as effective carrier channels. Meanwhile, a measured low lattice thermal conductivity of 1.11 Wm−1K−1 at 623 K is attributed to the intense phonon scattering from the intrinsic distorted-perovskite structure and the lattice defects by sulfur deficiency. Moreover, the BaZrS3 bulks in this work are stable against moisture/air and high temperature test. This work provides new insights into the fundamental electrical and thermal properties of chalcogenide perovskites, and highlights their great potential in the practical thermoelectric applications.