InAs/GaInAs-quantum-dot lasers emitting at 1.3 µm have been grown on GaAs substrates by solid source molecular beam epitaxy, and the device performance has been studied. Laser structures with 6 dot layers in the active region yield the best results. They show low transparency current densities and high characteristic temperatures. Ridge waveguide lasers with a cavity length of 400 µm and high reflectivity coatings exhibit threshold currents as low as 4.4 mA and output powers of 12 mW in continuous wave (cw) operation at room temperature. Unmounted devices can be operated in cw mode beyond 80°C. In pulsed mode laser operation above 150°C could be achieved with uncoated 800 µm long devices. By application of lateral chromium gratings, distributed feedback (DFB) lasers were fabricated. 800 µm high reflectivity (HR) coated devices display threshold currents of 20 mA, high side mode suppression ratios well above 40 dB and stable single mode operation.