Quantum Dot Spin Qubits Research Articles

Measurement of Enhanced Spin-Orbit Coupling Strength for Donor-Bound Electron Spins in Silicon.

While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, spin-orbit coupling (SOC) is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here it is showed that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. These findings may provide a pathway toward all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).

Atomically Precise Control of Topological State Hybridization in Conjugated Polymers.

Realization of topological quantum states in carbon nanostructures has recently emerged as a promising platform for hosting highly coherent and controllable quantum dot spin qubits. However, their adjustable manipulation remains elusive. Here, we report the atomically accurate control of the hybridization level of topologically protected quantum edge states emerging from topological interfaces in bottom-up-fabricated π-conjugated polymers. Our investigation employed a combination of low-temperature scanning tunneling microscopy and spectroscopy, along with high-resolution atomic force microscopy, to effectively modify the hybridization level of neighboring edge states by the selective dehydrogenation reaction of molecular units in a pentacene-based polymer and demonstrate their reversible character. Density functional theory, tight binding, and complete active space calculations for the Hubbard model were employed to support our findings, revealing that the extent of orbital overlap between the topological edge states can be finely tuned based on the geometry and electronic bandgap of the interconnecting region. These results demonstrate the utility of topological edge states as components for designing complex quantum arrangements for advanced electronic devices.

Long-distance photon-mediated and short-distance entangling gates in three-qubit quantum dot spin systems

Superconducting resonator couplers will likely become an essential component in modular semiconductor quantum dot (QD) spin qubit processors, as they help alleviate crosstalk and wiring issues as the number of qubits increases. Here, we focus on a three-qubit system composed of two modules: a two-electron triple QD resonator coupled to a single-electron double QD. Using a combination of analytical techniques and numerical results, we derive an effective Hamiltonian that describes the three-qubit logical subspace and show that it accurately captures the dynamics of the system. We examine the performance of short-range and long-range entangling gates, revealing the effect of a spectator qubit in reducing the gate fidelities in both cases. We further study the competition between nonadiabatic errors and spectator-associated errors in short-range operations and quantify their relative importance across practical parameter ranges for short and long gate times. We also analyze the impact of charge noise together with residual coupling to the spectator qubit on intermodule entangling gates and find that for current experimental settings, leakage errors are the main source of infidelities in these operations. Our results help pave the way toward identifying optimal modular QD architectures for quantum information processing on semiconductor chips. Published by the American Physical Society 2024

Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

Abstract Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple-quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double-quantum dot (RDQD), which reaches the strong coupling regime with a charge–photon coupling strength of g 0/(2π) = 175 MHz. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.

Quantum paraelectric varactors for radiofrequency measurements at millikelvin temperatures

Radiofrequency reflectometry can provide fast and sensitive electrical read-out of charge and spin qubits in quantum dot devices coupled to resonant circuits. In situ frequency tuning and impedance matching of the resonator circuit using voltage-tunable capacitors (varactors) is needed to optimize read-out sensitivity, but the performance of conventional semiconductor- and ferroelectric-based varactors degrades substantially in the millikelvin temperature range relevant for solid-state quantum devices. Here we show that strontium titanate and potassium tantalate, materials which can exhibit quantum paraelectric behaviour with large field-tunable permittivity at low temperatures, can be used to make varactors with perfect impedance matching and resonator frequency tuning at 6 mK. We characterize the varactors at 6 mK in terms of their capacitance tunability, dissipative losses and magnetic field insensitivity. We use the quantum paraelectric varactors to optimize the radiofrequency read-out of carbon nanotube quantum dot devices, achieving a charge sensitivity of 4.8 μe Hz−1/2 and a capacitance sensitivity of 0.04 aF Hz−1/2.

Protecting coherence from the environment via Stark many-body localization in a Quantum-Dot Simulator

Semiconductor platforms are emerging as a promising architecture for storing and processing quantum information, e.g., in quantum dot spin qubits. However, charge noise coming from interactions between the electrons is a major limiting factor, along with the scalability of many qubits, for a quantum computer. We show that a magnetic field gradient can be implemented in a semiconductor quantum dot array to induce a local quantum coherent dynamical ℓ−bit exhibiting the potential to be used as logical qubits. These dynamical ℓ−bits are responsible for the model being many-body localized. We show that these dynamical ℓ−bits and the corresponding many-body localization are protected from all noises, including phonons, for sufficiently long times if electron-phonon interaction is not non-local. We further show the implementation of thermalization-based self-correcting logical gates. This thermalization-based error correction goes beyond the standard paradigm of decoherence-free and noiseless subsystems. Our work thus opens a new venue for passive quantum error correction in semiconductor-based quantum computers.

Cavity-Mediated Entanglement of Parametrically Driven Spin Qubits via Sidebands

We consider a pair of quantum dot-based spin qubits that interact via microwave photons in a superconducting cavity and that are also parametrically driven by separate external electric fields. For this system, we formulate a model for spin qubit entanglement in the presence of mutually off-resonant qubit and cavity frequencies. We show that the sidebands generated via the driving fields enable highly tunable qubit-qubit entanglement using only ac control and without requiring the qubit and cavity frequencies to be tuned into simultaneous resonance. The model we derive can be mapped to a variety of qubit types, including detuning-driven one-electron spin qubits in double quantum dots and three-electron resonant exchange qubits in triple quantum dots. The high degree of nonlinearity inherent in spin qubits renders these systems particularly favorable for parametric drive-activated entanglement. We determine multiple common resonance conditions for the two driven qubits and the cavity and identify experimentally relevant parameter regimes that enable the implementation of entangling gates with suppressed sensitivity to cavity photon occupation and decay. The parametrically driven sideband resonance approach that we describe provides a promising route toward scalability and modularity in spin-based quantum information processing through drive-enabled tunability that can also be implemented in micromagnet-free electron and hole systems for spin-photon coupling. Published by the American Physical Society 2024

Virtual Photon-Mediated Quantum State Transfer and Remote Entanglement between Spin Qubits in Quantum Dots Using Superadiabatic Pulses.

Spin qubits in semiconductor quantum dots are an attractive candidate for scalable quantum information processing. Reliable quantum state transfer and entanglement between spatially separated spin qubits is a highly desirable but challenging goal. Here, we propose a fast and high-fidelity quantum state transfer scheme for two spin qubits mediated by virtual microwave photons. Our general strategy involves using a superadiabatic pulse to eliminate non-adiabatic transitions, without the need for increased control complexity. We show that arbitrary quantum state transfer can be achieved with a fidelity of 95.1% within a 60 ns short time under realistic parameter conditions. We also demonstrate the robustness of this scheme to experimental imperfections and environmental noises. Furthermore, this scheme can be directly applied to the generation of a remote Bell entangled state with a fidelity as high as 97.6%. These results pave the way for fault-tolerant quantum computation on spin quantum network architecture platforms.

Neural-network-designed three-qubit gates robust against charge noise and crosstalk in silicon

Spin qubits in semiconductor quantum dots are a promising platform for quantum computing, however, scaling to large systems is hampered by crosstalk and charge noise. Crosstalk here refers to the unwanted off-resonant rotation of idle qubits during the resonant rotation of the target qubit. For a three-qubit system with crosstalk and charge noise, it is difficult to analytically create gate protocols that produce three-qubit gates, such as the Toffoli gate, directly in a single shot instead of through the composition of two-qubit gates. Therefore, we numerically optimize a physics-informed neural network to produce theoretically robust shaped pulses that generate a Toffoli-equivalent gate. Additionally, robust π2 X and Controlled-Z gates are also presented in this work to create a universal set of gates robust against charge noise. The robust pulses maintain an infidelity of 10−3 for average quasistatic fluctuations in the voltage of up to a few mV instead of tenths of mV for non-robust pulses.

Non-symmetric Pauli spin blockade in a silicon double quantum dot

Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however, various mechanisms may lift PSB and complicate readout. In this work, we present an experimental study of PSB in a multi-electron low-symmetry double quantum dot (DQD) in silicon nanowires. We report on the observation of non-symmetric PSB, manifesting as blockaded tunneling when the spin is projected to one QD of the pair but as allowed tunneling when the projection is done into the other. By analyzing the interaction of the DQD with a readout resonator, we find that PSB lifting is caused by a large coupling between the different electron spin manifolds of 7.90 μeV and that tunneling is incoherent. Further, magnetospectroscopy of the DQD in 16 charge configurations, enables reconstructing the energy spectrum of the DQD and reveals the lifting mechanism is energy-level selective. Our results indicate enhanced spin-orbit coupling which may enable all-electrical qubit control of electron spins in silicon nanowires.

Cryogenic flip-chip interconnection for silicon qubit devices

Interfacing qubits with peripheral control circuitry poses one of the major common challenges toward realization of large-scale quantum computation. Spin qubits in silicon quantum dots (QDs)are particularly promising for scaling up, owing to the potential benefits from the know-how of the semiconductor industry. In this paper, we focus on the interposer technique as one of the potential solutions for the quantum–classical interface problem and report DC and RF characterization of a silicon QD device mounted on an interposer. We demonstrate flip-chip interconnection with the qubit device down to 4.2 K by observing Coulomb diamonds. We furthermore propose and demonstrate a laser-cut technique to disconnect peripheral circuits no longer in need. These results may pave the way toward system-on-a-chip quantum–classical integration for future quantum processors.

Magnetic control of spin switches in a graphene quantum dot and two-electron spin qubit

To get a magnetically controllable spin qubit based on carbon materials, we study the energy spectra of a triangular graphene quantum dot with two electrons occupying the degenerate shell. The total spin of the system can be either 0 or 1 and thus provides a possible realization for a spin qubit. The spin-phase diagrams are employed to show the evolution of the spin with the change of external magnetic and electric fields. The spin switches can be achieved by changing the magnetic field strength in the realistic range. In addition, from the perspective of manipulating spin qubits, we present some typical control models of spin switches. Our findings support the possibility to realize a carbon-based spin qubit controlled by an external magnetic field.

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by 1/f charge noise. We investigate theoretically fluctuations of ground state energy of an electron in gated quantum dot in a realistic Si/SiGe structure. We assume that the charge noise is caused by motion of charges trapped at the semiconductor–oxide interface. We consider a realistic range of trapped charge densities, ρ ∼1010 cm−2, and typical lenghtscales of isotropically distributed displacements of these charges, δr≤ 1 nm, and identify pairs (ρ,δr) for which the amplitude and shape of the noise spectrum are in good agreement with spectra reconstructed in recent experiments on similar structures.

Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots

The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process are sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. We then analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage, we ensure the accuracy of the extrapolated probability. We then prove that the efficiency and robustness of this method are 60 times larger than those of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout of up to 0.7 K/1.5 T in the future.

On-chip spin-photon entanglement based on photon-scattering of a quantum dot

The realization of on-chip quantum interfaces between flying photons and solid-state spins is a key building block for quantum-information processors, enabling, e.g., distributed quantum computing, where remote quantum registers are interconnected by flying photons. Self-assembled quantum dots integrated into nanostructures are one of the most promising systems for such an endeavor thanks to their near-unity photon-emitter coupling and fast spontaneous emission rate. Here we demonstrate high-fidelity on-chip entanglement between an incoming photon and a stationary quantum-dot hole spin qubit. The entanglement is induced by sequential scattering of the time-bin encoded photon interleaved with active spin control within a microsecond, two orders of magnitude faster than those achieved in other solid-state platforms. Conditioning on the detection of a reflected photon renders the entanglement fidelity immune to the spectral wandering of the emitter. These results represent a major step towards realizing a quantum node capable of interchanging information with flying photons and on-chip quantum logic, as required for quantum networks and quantum repeaters.

A compact and versatile cryogenic probe station for quantum device testing.

Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work, we present a probe station that can be operated from room temperature down to below 2K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization toward building scalable quantum circuits.

Designing Globally Time-Optimal Entangling Gates Using Geometric Space Curves

High-fidelity entangling gates are essential for quantum computation. Currently, most approaches to designing such gates are based either on simple, analytical pulse waveforms or on ones obtained from numerical optimization techniques. In both cases, it is typically not possible to obtain a global understanding of the space of waveforms that generate a target gate operation, which can make it challenging to identify globally time-optimal waveforms that respect amplitude and bandwidth constraints. Here, we show that in the case of weakly coupled qubits, it is possible to find all pulses that implement a target entangling gate in near-minimal time. We do this by mapping quantum evolution onto geometric space curves. We derive the minimal conditions these curves must satisfy in order to guarantee a gate with a desired entangling power is implemented. Pulse waveforms are extracted from the curvatures of these curves. We illustrate our method by designing fast, cnot-equivalent entangling gates for silicon quantum dot spin qubits with fidelities exceeding 99 %. We show that fidelities can be further improved while maintaining low bandwidth requirements by using geometrically derived pulses as initial guesses in numerical optimization routines.

Electrical Control of Uniformity in Quantum Dot Devices.

Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots, reducing the spread in pinch-off voltages by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.

Fast high-fidelity parity measurement of spin qubits in quantum dots using modulated pulses

Spin qubits in semiconductor quantum dots are a promising candidate for scalable quantum computation. A key step in quantum error correction with spin qubits is the capability to perform high-fidelity parity measurement much faster than the coherence time and to generate entanglement deterministically. Here we propose a parity measurement scheme for two spin qubits by modulated pulses, using a superconducting resonator as a detector. We show that the distinction between spin-parity states can be achieved with a high fidelity within a short measurement time. The combination of parity measurement and feedback control allows the deterministic preparation of various spin entangled states. In addition, the method can be directly applied to parity measurements and surface codes of multiple spin qubits. These results pave the way for fault-tolerant quantum computation with spin qubits.

Flopping-mode spin qubit in a Si-MOS quantum dot

Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, “flopping-mode” EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.