Pressure-induced Topological Phase Transition Research Articles

Signature of pressure-induced topological phase transition in ZrTe5

The layered van der Waals material ZrTe5 is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe5 nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe5 is a weak TI in ambient conditions.

Pressure-Induced Topological Phase Transition and Large Rashba Effect in Halide Double Perovskite.

In general, hydrostatic pressure can suppress ferroelectric polarization and further reduce Rashba spin-splitting, considering the spin-orbit coupling effect. Here, we present the design of ferroelectric double perovskite Cs2SnSiI6, which exhibits the anomalous enhancement of Rashba spin-splitting parameters by pressure-induced ferroelectric topological order. The Rashba effect is nonlinear with the decrease in polarization under pressure and reaches a maximum at the pressure-induced Weyl semimetal (WSM) state between the transition from a normal insulator (NI) to a topological insulator (TI). Furthermore, we discover that controlling ferroelectric polarization with an electric field can also induce the topological transition with a large Rashba spin-splitting but under a lower critical pressure. These discoveries show a tunable gaint Rashba effect and pressure-induced topological phase transition for Cs2SnSiI6, which can promote future research on the interaction between the Rashba effect and topological order, and its application to new electronic and spintronic devices.

Superconducting topological Dirac semimetals: P6/m−Si6 and P6/m−NaSi6

We theoretically propose that hexagonal silicon-based crystals, $P6/m$-Si$_6$ and $P6/m$-NaSi$_6$, are topological Dirac semimetals with superconducting critical temperatures of 12 K and 13 K, respectively, at ambient pressure. Band inversion occurs with the Fu-Kane topological invariant $\mathbb{Z}_2=1$, even in the absence of spin-orbit coupling. The Dirac nodes protected by $C_6$ crystal rotational symmetry remain gapless with spin-orbit coupling. Using first-principles calculations, we find pressure-induced topological phase transitions for $P6/m$-Si$_6$ and $P6/m$-NaSi$_6$ with critical external pressures of 11.5 GPa and 14.9 GPa, respectively. Above the critical pressures, the Dirac bands are gapped with $\mathbb{Z}_2=0$, while the superconducting states and the crystal symmetries are retained.Our results may shed light into a search for silicon-based topological materials with superconductivity.

Pressure-induced topological phase transition in XMR material YbAs: a first-principles study

Pressure-induced topological phase transition in XMR material YbAs: a first-principles study

Phonon softening near topological phase transitions

Topological phase transitions occur when the electronic bands change their topological properties, typically featuring the closing of the bandgap. While the influence of topological phase transitions on electronic and optical properties has been extensively studied, its implication on phononic properties and thermal transport remains unexplored. In this work, we use first-principles simulations to show that certain phonon modes are significantly softened near topological phase transitions, leading to increased phonon-phonon scattering and reduced lattice thermal conductivity. We demonstrate this effect using two model systems: pressure-induced topological phase transition in $\rm ZrTe_5$ and chemical composition induced topological phase transition in $\rm{Hg_{1-x}Cd_{x}Te}$. We attribute the phonon softening to emergent Kohn anomalies associated with the closing of the bandgap. Our study reveals the strong connection between electronic band structures and lattice instabilities and opens up a potential direction towards controlling heat conduction in solids.

Pressure-induced topological phase transition in noncentrosymmetric elemental tellurium

Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field is of particular interest from both fundamental and technological viewpoints. Here we report possible signatures of the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov-de Haas oscillations, as well as oscillation phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior is consistent with the pressure-induced band deformation and resultant band-crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.

Experimental evidence of crystal symmetry protection for the topological nodal line semimetal state in ZrSiS

Tunable symmetry breaking plays a crucial role for the manipulation of topological phases of quantum matter. Here, through combined high-pressure magneto-transport measurements, Raman spectroscopy, and X-ray diffraction, we demonstrate a pressure-induced topological phase transition in nodal-line semimetal ZrSiS. Symmetry analysis and first-principles calculations suggest that this pressure-induced topological phase transition may be attributed to weak lattice distortions by non-hydrostatic compression, which breaks some crystal symmetries, such as the mirror and inversion symmetries. This finding provides some experimental evidence for crystal symmetry protection for the topological semimetal state, which is at the heart of topological relativistic fermion physics.

Novel pressure-induced topological phase transitions of supercooled liquid and amorphous silicene

This molecular dynamics (MD) simulation carries a detailed analysis of a pressure-induced structural transition supercooled liquid and amorphous silicene (a-silicene). Low-density models of supercooled liquid and a-silicene containing 10 000 atoms are obtained by rapid cooling processes from the melts. Then, an a-silicene model at T = 1000 K, a supercooled liquid model at T = 1500 K and a liquid silicon model at T = 2000 K have been isothermally compressed step by step up to a high density in order to observe the pressure-induced structural changes. Specifically ‘Cairo tiling’ pentagonal and square lattices of silicene are discovered in our calculations. Structural properties of those penta-silicene and tetra-silicene models have been carefully analyzed through the radial distribution functions, interatomic distances, bond-angle distributions under high-pressure condition. The dependence of pressure on formation behaviors is calculated via pressure–volume and energy–density relationships. The first order transition from low-density supercooled liquid/amorphous silicene to high-density penta-silicene and continuous transition from low-density liquid to high-density tetra-silicene are discussed. Atomic mechanism and sp3/sp2 hybridization evolution are inspected whereas the role of low-membered ring defects/boundary promises remarkable application and advanced research in future.

Pressure-induced structural and electronic transitions in bismuth iodide

Using a machine-learning accelerated crystal structural search, and ab initio calculations together with high-pressure Raman measurements, we study the crystal and electronic structures of bismuth iodide (BiI) systematically up to 50 GPa. We find that the ambient $C2/m$ phase ($\ensuremath{\beta}\ensuremath{-}\mathrm{B}{\mathrm{i}}_{4}{\mathrm{I}}_{4}$) transforms across a tetragonal $P{4}_{2}/mmc$ phase at 8.5 GPa and finally to a hexagonal $P{6}_{3}/mmc$ phase at 28.2 GPa. Our high-pressure Raman experiments identify a phase transition at around 8.6 GPa, and the experimental Raman modes evolution agrees with our calculations reasonably. Band-structures calculations suggest the BiI system undergoes a pressure-induced topological phase transition from a topological metal ($P{4}_{2}/mmc$ phase) to a trivial metal (the $P{6}_{3}/mmc$ phase). Our electron-phonon coupling calculations show both the $P{4}_{2}/mmc$ and $P{6}_{3}/mmc$ phases are superconductors and the estimated superconducting critical temperature agrees with previous measurements. Our study shows the previously reported pressure-induced superconductivity in BiI should originate from structure phase transitions.

Pressure-Induced Topological Phase Transitions in CdGeSb2 and CdSnSb2.

Using first-principles calculations, we study the occurrence of topological quantum phase transitions (TQPTs) as a function of hydrostatic pressure in CdGeSb2 and CdSnSb2 chalcopyrites. At ambient pressure, both materials are topological insulators, having a finite band gap with inverted order of Sb-s and Sb-p x,p y orbitals of valence bands at the Γ point. Under hydrostatic pressure, the band gap reduces, and at the critical point of the phase transition, these materials turn into Dirac semimetals. Upon further increasing the pressure beyond the critical point, the band inversion is reverted, making them trivial insulators. This transition is also captured by the Lüttinger model Hamiltonian, which demonstrates the critical role played by pressure-induced anisotropy in frontier bands in driving the phase transitions. These theoretical findings of peculiar coexistence of multiple topological phases provide a realistic and promising platform for experimental realization of the TQPTs.

Pressure-induced topological phase transitions and structural transition in 1T-TiTe2 single crystal

High pressure in situ Raman scattering and electrical resistivity measurements were performed to investigate the phase transitions in a semimetal 1T-TiTe2 single crystal up to 17 GPa. Combining anomalous experimental results with the electronic band structures and Z2 topological invariants in calculations, two topological phase transitions and one structural phase transition were confirmed at 1.7 GPa, 3 GPa, and 8 GPa, respectively. These two topological transformations are due to the enhanced orbital hybridization followed by a few of band inversions near the Fermi level, and the further parity analysis manifested that the phases II and III correspond to a strong topological state and a weak topological state, respectively. The rich topology variation of 1T-TiTe2 under high pressure provides a potential candidate for understanding the relevant topology physics and probable applications. The current results also demonstrate that Raman spectroscopy and electrical transport measurements are efficient tools to detect the topological phase transition under high pressure.

Investigation of topological phase transition in BiTeBr under high pressure

The polar semiconductor BiTeBr has the P3m1 symmetry, similar to that of BiTeI, in which a pressure-induced topological phase transition from a trivial semiconductor to a topological insulator has been theoretically predicted. To investigate the topological phase transition in BiTeBr, we performed X-ray diffraction and electrical resistivity measurement under high pressure, and the band calculation using experimental structural parameters. The P3m1 structure is stable up to the pressure of ~7 GPa; the ratio of lattice constants (c/a) reaches a minimum at around 3 GPa. Furthermore, the following phenomena are observed at around this pressure; 1) the band-gap energy closes and reopens with pressure, 2) the temperature dependence of resistivity changes from metallic to semiconducting. From theoretical prediction in BiTeI, the topological phase transition is accompanied by the band gap closing/reopening. Therefore, the results obtained in BiTeBr suggest that the topological phase transition occurs at around 3 GPa.

Theoretical study of the pressure-induced topological phase transition in LaSb

By using first-principles electronic structure calculations, we predict that the extreme magnetoresistance (XMR) material LaSb takes a topological phase transition without breaking any symmetry under a hydrostatic pressure applied between 3 and 4 GPa, meanwhile the electron-hole compensation remains in its electronic band structure. Thus LaSb provides an ideal platform for studying the individual role of topological property playing in the XMR phenomenon, in addition to the electron-hole compensation. This has general implication to the relationship of XMR effect and topological property in topological materials.

Pressure-induced topological phase transition in the polar semiconductor BiTeBr

We performed x-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase transition in BiTeBr having a noncentrosymmetric layered structure (space group $P3m1)$. The $P3m1$ structure remains stable up to pressures of 5 GPa; the ratio of lattice constants $c/a$ has a minimum at pressures of 2.5--3 GPa. In the same range, the temperature dependence of resistivity changes from metallic to semiconducting at 3 GPa and has a plateau region between 50 and 150 K in the semiconducting state. Meanwhile, the pressure variation of band structure shows that the bulk band-gap energy closes at 2.9 GPa and re-opens at higher pressures. Furthermore, according to the Wilson loop analysis, the topological nature of electronic states in noncentrosymmetric BiTeBr at 0 and 5 GPa are explicitly revealed to be trivial and nontrivial, respectively. These results strongly suggest that pressure-induced topological phase transition in BiTeBr occurs at the pressures of 2.9 GPa.

Pressure-induced topological phase transitions and strongly anisotropic magnetoresistance in bulk black phosphorus

We report the anisotropic magnetotransport measurement on a noncompound band semiconductor black phosphorus (BP) with magnetic field $\mathbit{B}$ up to 16 Tesla applied in both perpendicular and parallel to electric current $\mathbit{I}$ under hydrostatic pressures. The BP undergoes a topological Lifshitz transition from band semiconductor to a zero-gap Dirac semimetal state at a critical pressure ${P}_{c}$, characterized by a weak localization-weak antilocalization transition at low magnetic fields and the emergence of a nontrivial Berry phase of $\ensuremath{\pi}$ detected by SdH magneto-oscillations in magnetoresistance curves. In the transition region, we observe a pressure-dependent negative MR only in the $\mathbit{B}\ensuremath{\parallel}\mathbit{I}$ configuration. This negative longitudinal MR is attributed to the Adler-Bell-Jackiw anomaly (topological $\mathbit{E}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbit{B}$ term) in the presence of weak antilocalization corrections.

Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure

Combining the k · p method with the third-order elasticity theory, we perform a theoretical study of the pressure-induced topological phase transition and the pressure evolution of topologically protected edge states in InN/GaN and In-rich InGaN/GaN quantum wells. We show that for a certain range of the quantum well parameters, thanks to a negative band gap pressure coefficient, it is possible to continuously drive the system from the normal insulator state through the topological insulator into the semimetal phase. The critical pressure for the topological phase transition depends not only on the quantum well thickness but also on the width of the Hall bar, which determines the coupling between the edge states localized at the opposite edges. We also find that in narrow Hall bar structures, near the topological phase transition, a significant Rashba-type spin splitting of the lower and upper branches of the edge state dispersion curve appears. This effect originates from the lack of the mirror symmetry of the quantum well potential caused by the built-in electric field, and can be suppressed by increasing the Hall bar width. When the pressure increases, the energy dispersion of the edge states becomes more parabolic-like and the spin splitting decreases. A further increase of pressure leads to the transition to a semimetal phase, which occurs due to the closure of the indirect 2D bulk band gap. The difference between the critical pressure at which the system becomes semimetallic, and the pressure for the topological phase transition, correlates with the variation of the pressure coefficient of the band gap in the normal insulator state.

Quantum Oscillation Signatures of Pressure-induced Topological Phase Transition in BiTeI.

We report the pressure-induced topological quantum phase transition of BiTeI single crystals using Shubnikov-de Haas oscillations of bulk Fermi surfaces. The sizes of the inner and the outer FSs of the Rashba-split bands exhibit opposite pressure dependence up to P = 3.35 GPa, indicating pressure-tunable Rashba effect. Above a critical pressure P ~ 2 GPa, the Shubnikov-de Haas frequency for the inner Fermi surface increases unusually with pressure, and the Shubnikov-de Haas oscillations for the outer Fermi surface shows an abrupt phase shift. In comparison with band structure calculations, we find that these unusual behaviors originate from the Fermi surface shape change due to pressure-induced band inversion. These results clearly demonstrate that the topological quantum phase transition is intimately tied to the shape of bulk Fermi surfaces enclosing the time-reversal invariant momenta with band inversion.

Bulk signatures of pressure-induced band inversion and topological phase transitions in Pb(1-x)Sn(x)Se.

The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase transitions in Pb(1-x)Sn(x)Se (x=0.00, 0.15, and 0.23). The results of infrared measurements as a function of pressure indicate the closing and the reopening of the band gap as well as a maximum in the free carrier spectral weight. The enhanced density of states near the band gap in the topological phase gives rise to a steep interband absorption edge. The change of density of states also yields a maximum in the pressure dependence of the Fermi level. Thus, our conclusive results provide a consistent picture of pressure-induced topological phase transitions and highlight the bulk origin of the novel properties in topological insulators.

Pressure-induced topological phase transitions in rocksalt chalcogenides

By means of a comprehensive theoretical investigation, we show that external pressure can induce topological phase transitions in IV-VI semiconducting chalcogenides with rock-salt structure. These materials satisfy mirror symmetries that are needed to sustain topologically protected surface states, at variance with time-reversal symmetry responsible for gapless edge states in $\mathcal{Z}_{2}$ topological insulators. The band inversions at high-symmetry points in the Brillouin zone that are related by mirror symmetry, are brought about by an "asymmetric" hybridization between cation and anion $sp$ orbitals. By working out the microscopic conditions to be fulfilled in order to maximize this hybridization, we identify materials in the rock-salt chalcogenide class that are prone to undergo a topological phase transition induced by pressure and/or alloying. Our model analysis is fully comfirmed by complementary advanced \textit{first-principles} calculations and \textit{ab initio}-based tight-binding simulations.

Pressure-induced topological phase transitions in membranes.

Some highly unusual features of a lipid-water liquid crystal are revealed by high pressure x-ray diffraction, light scattering and dilatometric studies of the lamellar (bilayer $L_{\alpha}$) to nonlamellar inverse hexagonal ($H_{II}$) phase transition. (i) The size of the unit cell of the $H_{II}$ phase increases with increasing pressure. (ii) The transition volume, $\Delta V_{bh}$, decreases and appears to vanish as the pressure is increased. (iii) The intensity of scattered light increases as $\Delta V_{bh}$ decreases. Data are presented which suggest that this increase is due to the formation of an intermediate cubic phase, as predicted by recent theoretical suggestions of the underlying universal phase sequence.