Potential Of Ga Research Articles

The Effect of Glycyrrhizin on the Viability and Proliferation of Dental Pulp Stem Cells Compared to Intracanal Medicaments.

To study the effect of glycyrrhizin (GA) on the viability and proliferation of dental pulp stem cells (DPSCs) compared with intracanal medicaments. Third molars of an adult donor were used to obtain the DPSCs. Flow cytometry was utilized to conduct phenotypic analysis for DPSCs. The methyl-thiazol tetrazolium (MTT) test was used to detect the cell viability. Cell proliferation assay was conducted at distinct time intervals: 3, 5, and 7 days. The flow cytometry analysis verified the positive expression of mesenchymal cell surface antigen molecules (CD73, CD90, and CD105) and the absence of hematological markers (CD14, CD34, and CD45) in the DPSCs. The cells that treated with concentrations more than 0.5 mg/mL of Ca(OH2) and triple antibiotic paste (TAP) gave significant decrease in viability in comparison to the untreated cells (p < 0.05). Also, the cells treated with concentrations 50 and 25 µM of GA showed no significant difference compared with the untreated cells (p > 0.05), while concentrations 12.5 and 6.25 µM expressed a significant increase in viability compared with the untreated cells (p < 0.05). At 7 days, cells treated with the three different concentrations of GA (12.5, 25, and 50 µM) demonstrated a significant increase in cell density compared with Ca(OH)2 and TAP-treated cells (p < 0.05). Based upon the potential of GA on DPSCs proliferation compared with Ca(OH)2 and TAP, It is conceivable to acknowledge that GA could be used as an intracanal medicaments for revascularization process of necrotic immature teeth. This study emphasizes the significance of assessing alternative root canal medicaments and their impact on the proliferation and viability of DPSCs. The results regarding GA, specifically its impact on the viability and growth of DPSCs, provide essential understanding for its potential application as an intracanal medicine. This study adds to the continuous endeavors in identifying safer and more efficient intracanal therapies, which are essential for improving patient outcomes in endodontic operations. How to cite this article: Alrashidi MA, Badawi MF, Elbeltagy MG, et al. The Effect of Glycyrrhizin on the Viability and Proliferation of Dental Pulp Stem Cells Compared to Intracanal Medicaments. J Contemp Dent Pract 2024;25(3):267-275.

A general approximation method for accurate evaluation of the intermolecular potential parameters by using density functional theory

In this work, a new approach is developed and presented for determining the intermolecular potential parameters from intermolecular interaction energy data obtained using the Density Functional Theory (DFT) method over a different basis set. The proposed method in this work is especially useful for the evaluation of all intermolecular potential parameters of arbitrary atoms and molecules. The method developed in this study can be used for evaluating some thermodynamic properties of molecules. In general, this approach has great advantages for the determination of all types of potential parameters of atoms and molecules. As an application, the Lennard-Jones (12-6) and Morse potential parameters of the Ga(CH3)3 molecule have been determined first by using the basis set with density functional method (DFT/B3LYP) method over the 6-31G basis set. The speed of sound, heat capacities, and second virial coefficient over the Lennard-Jones (L-J) (12-6) potential of Ga(CH3)3 have been calculated. The results obtained for the speed of sound and heat capacities of Ga(CH3)3 are compared with theoretical and experimental data. The results indicate that our data are in good agreement with data from the literature.

Dual-band and dual-mode ultraviolet photodetection characterizations of Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/Al&lt;sub&gt;0.1&lt;/sub&gt;Ga&lt;sub&gt;0.9&lt;/sub&gt;N homo-type heterojunction

The deep-ultraviolet (DUV) photodetectors (PDs) have important applications in lots of fields. Thus, developing self-powered DUV PDs and excavating the inherent mechanism seem seriously crucial to achieving further actual applications. The construction of heterojunction can lead to many desired characteristics in optoelectronic devices. In the field of DUV photodetection, Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; has been a popular subject for constructing DUV PDs. So, it is necessary to develop self-powered Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;-based DUV PDs through fabricating its heterogeneous structure. Therefore, in this work, the Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/Al&lt;sub&gt;0.1&lt;/sub&gt;Ga&lt;sub&gt;0.9&lt;/sub&gt;N heterojunction DUV PD is fabricated and discussed, which can achieve 254 and 365 nm DUV light photodetection. At positive voltages and negative voltages, the heterojunction PD can operate in a photoconductive mode or a depletion mode, respectively. In view of the PD performance, it displays decent dark current and DUV photoresponses. At voltage of 5 and –5 V, under 254 nm DUV light illumination, the photoresponsivity (&lt;i&gt;R&lt;/i&gt;) is 2.09 and 66.32 mA/W, respectively, while under 365 nm DUV light illumination, &lt;i&gt;R&lt;/i&gt; is 0.22 and 34.75 mA/W, respectively. In addition, under the built-in electric field (&lt;i&gt;E&lt;/i&gt;&lt;sub&gt;built-in&lt;/sub&gt;), &lt;i&gt;R&lt;/i&gt; is 0.13 and 0.01 mA/W for 254 nm and 365 nm DUV light illumination, respectively. In all, the fabricated heterojunction PD displays promising prospects in the coming next-generation semiconductor photodetection technology. The results in this work indicate the potential of Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/Al&lt;sub&gt;0.1&lt;/sub&gt;Ga&lt;sub&gt;0.9&lt;/sub&gt;N heterojunction with high performance DUV photodetection. Furthermore, except for the characterizations of the materials and photodetector, in the end of this paper, the operating mechanism of the dual-band dual-mode heterojunction PD is analyzed through its heterogeneous energy-band diagram. It is concluded that the illustrated dual-band dual-mode Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/Al&lt;sub&gt;0.1&lt;/sub&gt;Ga&lt;sub&gt;0.9&lt;/sub&gt;N heterojunction can be sensitive to UVA waveband and UVC waveband in the electromagnetic spectrum, extending its photodetection region. And, the dual-mode (photoconductive mode and depletion mode) photodetection indicates two kinds of carrier transports in one PD, which can be attributed to the successful construction of the N-N tomo-type Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/Al&lt;sub&gt;0.1&lt;/sub&gt;Ga&lt;sub&gt;0.9&lt;/sub&gt;N heterojunction.

Comparing potential of GA and 2, 4-D in increasing fruit yield fromJatropha curcas

Jatropha curcas L. has been accepted world wide as a plant with tremendous commercial importance as a source for biodiesel. It is a monoecious plant with staminate and pistillate flowers on same inflorescence. The number of staminate flowers is higher than pistillate ones resulting in very low fruit yield. Altering the sex ratio, to increase number of female flowers would lead to better yield. Phytohormones are one of the most important factors known to alter sex ratio in plants. The mechanism by which phytohormones alter sex ratio differs in different plant species. Earlier studies from our laboratory have shown effect of exogenous application of GA and 2, 4-D on flowering patterns in Jatropha. Here we report a comparative study of the effect of exogenous application of GA and 2, 4-D (50 and 100 ppm) on flower sex modification in Jatropha curcas. There was considerable increase in total number of flowers and female: male flower ratio by application of GA and 2, 4-D. However, at higher concentration of GA a negative result as far as fruit yield is considered was seen. The reasons for this are reported here. 2, 4-D on the other hand increased the ratio of female flowers in a concentration dependent fashion. Of the four treatments reported here, we have observed that 2, 4-D (100 ppm) shows better results than GA and untreated plants. The reasons for this are discussed.

Surface reconstructions and stabilizing mechanism of the GaAs(311)Asurface

We investigated various surface reconstructions of a GaAs(311)$A$ surface by using first-principles calculations. The relative stability of the reconstructions was compared by estimating the formation energy taking into account the chemical potentials of Ga and As. We found many metastable reconstructions. Moreover, we found that the electron counting model is not so effective for this surface, although it is a strong guiding principle for determining the stable surface reconstruction of GaAs(100). Further investigations suggested that $s{p}^{2}$-like bond formation effectively works on the (311)$A$ surface. Competition between the $s{p}^{2}$-like bond formation and the conventional stabilization mechanism of As-dimer formation would explain why the (311)$A$ surface has many metastable surface reconstructions.