Positive Effect Research Articles

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient.

This study demonstrates a significant enhancement in the performance of thin-film transistors (TFTs) in terms of stability and mobility by combining indium-tungsten oxide (IWO) and zinc oxide (ZnO). IWO/ZnO heterojunction structures were fabricated with different channel thickness ratios and annealing environments. The IWO (5 nm)/ZnO (45 nm) TFT, annealed in O2 ambient, exhibited a high mobility of 26.28 cm2/V·s and a maximum drain current of 1.54 μA at a drain voltage of 10 V, outperforming the single-channel ZnO TFT, with values of 3.8 cm2/V·s and 28.08 nA. This mobility enhancement is attributed to the formation of potential wells at the IWO/ZnO junction, resulting in charge accumulation and improved percolation conduction. The engineered heterojunction channel demonstrated superior stability under positive and negative gate bias stresses compared to the single ZnO channel. The analysis of O 1s spectra showed OI, OII, and OIII peaks, confirming the theoretical mechanism. A bias temperature stress test revealed superior charge-trapping time characteristics at temperatures of 25, 55, and 85 °C compared with the single ZnO channel. The proposed IWO/ZnO heterojunction channel overcomes the limitations of the single ZnO channel and presents an attractive approach for developing TFT-based devices having excellent stability and enhanced mobility.

Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgOx Layer.

We propose the introduction of a magnesium oxide (MgOx) layer to reduce the temperature required for the activation of indium gallium zinc oxide (IGZO) thin films. By incorporating the MgOx layer between the IGZO channel layer and the gate insulator layer, the required activation temperature is lowered from 300 to 200 °C while enhancing the electrical performance of the IGZO thin-film transistor (TFT). Specifically, the field effect mobility is improved from 6.40 to 16.12 cm2/(V s), the on/off current ratio is enhanced from 1.62 × 109 to 7.16 × 109, and subthreshold swing is enhanced from 0.48 to 0.46 V/decade. Furthermore, IGZO TFTs with the MgOx layer exhibit enhancements in threshold voltage (VTH) shift compared to TFTs without the MgOx layer under positive bias stress (VGS = 20 V and VDS = 0.1 V for 10,000 s) and negative bias stress (VGS = -20 V and VDS = 0.1 V for 10,000 s): the VTH shifts are decreased from 2.40 to 1.72 V and from 0.56 to 0.53 V, respectively. These enhancements are verified through various analyses and are attributed to the diffusion of Mg atoms into the IGZO front channel during the low-temperature activation process, which results in the formation of Mg-doped IGZO between the MgOx and IGZO channel layers.

Can ChatGPT read who you are?

The interplay between artificial intelligence (AI) and psychology, particularly in personality assessment, represents an important emerging area of research. Accurate personality trait estimation is crucial not only for enhancing personalization in human-computer interaction but also for a wide variety of applications ranging from mental health to education. This paper analyzes the capability of a generic chatbot, ChatGPT, to effectively infer personality traits from short texts. We report the results of a comprehensive user study featuring texts written in Czech by a representative population sample of 155 participants. Their self-assessments based on the Big Five Inventory (BFI) questionnaire serve as the ground truth. We compare the personality trait estimations made by ChatGPT against those by human raters and report ChatGPT's competitive performance in inferring personality traits from text. We also uncover a ‘positivity bias’ in ChatGPT's assessments across all personality dimensions and explore the impact of prompt composition on accuracy. This work contributes to the understanding of AI capabilities in psychological assessment, highlighting both the potential and limitations of using large language models for personality inference. Our research underscores the importance of responsible AI development, considering ethical implications such as privacy, consent, autonomy, and bias in AI applications.

When the personal and the collective intersects: Memory, future thinking, and perceived agency during the COVID-19 pandemic.

Do collective crises have an impact on the characteristics of mental time travel for individuals and collectives? The COVID-19 pandemic provides a unique context to address this question due to the intersection it created between the personal and the collective domains. In two studies (N = 273), we examined the valence and perceived agency involved in memory and future thinking for personal and collective domains. The second study also included a longitudinal component with 43 participants completing both studies. In research done prior to the pandemic, a valence-based dissociation between personal and collective events was consistently observed in Western samples. We wanted to see if these patterns changed during different stages of the pandemic. In the first study, participants no longer exhibited the usual positivity bias for the personal future, while in the second study, they did not exhibit the usual negativity bias for the collective future. The second aim of the current article was to assess the agency people attribute to themselves and their nation over events and how that relates to valence. People always attributed more agency to themselves over positive events than negative events in both personal and collective domains. Perceived nation agency, however, was associated with positivity in the collective domain but with negativity in the personal domain. Longitudinal analyses confirmed these patterns. Taken together, these results indicate that a collective crisis that has immediate and profound effects on personal lives can alter the patterns observed for mental time travel, especially for the future. (PsycInfo Database Record (c) 2024 APA, all rights reserved).

Recent Recall of Iron Reagent-Investigation of Potential Reagent Contamination and Assay Improvement Strategy.

Recently, a major manufacturer recalled several lots of iron assay reagent due to positive bias of roughly 15%-30% and the cause remains unknown. This study investigated the root cause of this positive bias and evaluated a simple practical approach to improve the assay. Performance comparison of recalled and unimpacted iron assay kits was done utilizing calibrators, quality control (QC) materials, and 42 remnant patient samples. Spectral scan and trace elements analysis of R1 and R2 reagents was performed. Copper (Cu) and thiourea (TU) spiking experiments were utilized to elucidate the cause and prevention of positive bias seen with recalled lots. Iron measurements in QC materials and patient samples using recalled reagents generated a positive bias of 17.5% and 21%, respectively. Correspondingly, the recalled R2 reagents, but not R1, showed a rise in basal absorbance along with an unanticipated presence of Cu (22.7 µg/dL) and lead (7.5 µg/L). Cu spiking to recalled and unimpacted R2 reagent intensified the reagent color besides falsely increasing its absorbance, calibration factor, and patient iron measurements. Interestingly, addition of TU (65 mmol/L) to R2 reagent from unimpacted lot prevented the short-term and prolonged Cu-induced spurious rise in calibration factor and patient iron estimations. We conclude that accidental copper contamination of R2 reagent during manufacturing could be a reason underlying the positive bias in the recalled iron reagent lots. Addition of TU in ferene-containing R2 reagent is a simple and effective means to prevent Cu-induced false elevation in iron values.

Ultrafast (≈10 GHz) mid-IR modulator based on ultrafast electrical switching of the light–matter coupling

We demonstrate a free-space amplitude modulator for mid-infrared radiation (λ ≈ 9.6 μm) that operates at room temperature up to at least 20 GHz (above the −3 dB cutoff frequency measured at 8.2 GHz). The device relies on the ultrafast transition between weak- and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity. It is made of a semiconductor heterostructure enclosed in a judiciously designed array of metal–metal optical resonators, that—all-together—behave as an electrically tunable surface. At negative bias, it operates in the weak light–matter coupling regime. Upon application of an appropriate positive bias, the quantum wells populate with electrons, and the device transitions to the strong-coupling regime. The modulator transmission remains linear with input radio frequency power in the 0–9 dBm range. The increase in optical powers up to 25 mW exhibit a weak beginning of saturation a little bit below.

Unveiling the Interlayer Interaction in a 1H/1T TaS2 van der Waals Heterostructure.

This study delves into the intriguing properties of the 1H/1T-TaS2 van der Waals heterostructure, focusing on the transparency of the 1H layer to the charge density wave of the underlying 1T layer. Despite the sizable interlayer separation and metallic nature of the 1H layer, positive bias voltages result in a pronounced superposition of the 1T charge density wave structure on the 1H layer. The conventional explanation relying on tunneling effects proves insufficient. Through a comprehensive investigation combining low-temperature scanning tunneling microscopy, scanning tunneling spectroscopy, non-contact atomic force microscopy, and first-principles calculations, we propose an alternative interpretation. The transparency effect arises from a weak yet substantial electronic coupling between the 1H and 1T layers, challenging prior understanding of the system. Our results highlight the critical role played by interlayer electronic interactions in van der Waals heterostructures to determine the final ground states of the systems.

Infl uence of biologically active additive on meat productivity of pigs

In order to improve the digestibility and assimilation of nutrients in feed by animals, biologically active additives have recently been used in practice. The purpose of the research was to study the infl uence of a biologically active additive on the meat productivity of pigs. The research was carried out at the Agrofi rma Ariant LLC in the Emanzhelinsky district one of the largest pig-breeding complexes in the Chelyabinsk region for the production of pork on an industrial basis. The data on the use of the probiotic Bifi dumbacterin in the diet of fattening pigs have been presented in the article. The probiotic feed additive was given to animals in the amount of 0.05 and 0.10 g/head/day. It was found that the absolute gain in live weight of young pigs in the control group during the experimental period was 69.60 kg, in the 1st experimental group it was 74.16 kg, which was by 4.56 kg more, and in the 2nd experimental group it was 76.56 kg, which was by 6.96 kg more. The average daily live weight gain of animals in the 1st and 2nd experimental groups was higher than in the control by 6.55 and 10.00 %, respectively. The use of a biologically active additive in addition to the main diet had a positive eff ect on the formation of meat productivity of fattened young pigs in the experimental groups. The pigs of the 1st and 2nd experimental groups exceeded the control group in slaughter weight by 5.35 and 7.81 %, respectively, in hot carcass weight by 5.13 and 7.39 %, in slaughter yield by 0.5 and 0.7 abs.%. Economic effi ciency in monetary terms was higher in the experimental groups. The use of Bifidumbacterin in feeding of young pigs made it possible to reduce the prime-cost of 1 centner of live weight gain by 294.14–423.17 rubles and increase the level of profitability of pork production by 7.26–10.74 abs.%.

Use of non-alkaloid lupine grain of the variety Deko in compound feed for young laying hens

The purpose of the research was to study the use of alkaloid-free lupine grain of the variety Deco in compound feed for young laying hens of the cross Hisex Brown. The studies were carried out under the conditions of enterprises of the Volgograd region on poultry of the highly productive egg-laying сross Hisex Brown. The nutritional value of lupine with diff erent levels of its introduction into compound feed recipes instead of full-fat soy for young egg-laying hens was assessed. The positive eff ect of lupine use on such important animal science and physiological indicators as digestibility and assimilation of nutrients in diets, live weight of young hens, hematological indicators of experimental chickens, and economic eficiency was substantiated. Thus, the digestibility coefficient of dry matter of feed in the control group was 70.96 %, in the 1st experimental group it was 71.87 %, which was by 0.91 abs.% more than in the control group; in the 2nd experimental group it was 72.23 %, which was also higher than the control by 1.27 abs.% and in the 3rd experimental group the studied indicator was 72.07 % and was higher than the control group by 1.11 abs.%. The indicators of total and average daily live weight gain in the experimental groups were higher than in the control group. Thus, in the 1st experimental group these indicators were higher in comparison with the control by 12.5 g and 0.11 g (0.95 %). In the 2nd experimental group these indicators were higher than in the control group by 29.31 g and 0.25 g (2.23 %) and in the 3rd group by 18.38 g and 0.15 g (1.4 %), respectively. The economic efficiency in terms of cost indicators of compound feed for poultry in the control and experimental groups was within the following limits: in the 1st experimental group 857.5 rubles, in the 2nd experimental group 1286.25 rubles, and in the 3rd experimental group 1715.0 rubles.

Enlightenment of Deionized‐Water Bathing IGZO TFTs

AbstractAt present, amorphous indium–gallium–zinc oxide (IGZO) semiconductor has become the most commonly used semiconductor material and is widely used in flat panel displays and various sensors, but its performance is greatly affected by environmental factors, especially water. This study investigates the instability of IGZO thin‐film transistors (TFTs) soaked in deionized water. After 24 h bathing, the field‐effect mobility and threshold voltage change a little, but the subthreshold swing, positive bias stress and negative bias stress stability undergo clear degradation. Through comprehensive examination of the changes in the chemical composition, surface morphology and thickness of the IGZO films, it's found that IGZO experiences selective etching by deionized water, and consequently the film surface becomes rough and rich of In and oxygen vacancies, which can explain the variations on device performance well. In addition to the bathing experiment performed on In2O3, Ga2O3, and ZnO TFTs, a schematic image of the reaction between water and IGZO is depicted, showing the preferential loss of Ga and Zn located next to the oxygen vacancy.

Thermal Dehydrogenation Impact on Positive Bias Stability of Amorphous InSnZnO Thin-Film Transistors.

Recently, the growing demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with high mobility and good stability to implement ultrahigh-resolution displays has made tracking the role of hydrogen in oxide semiconductor films increasingly important. Hydrogen is an essential element that contributes significantly to the field effect mobility and bias stability characteristics of AOS TFTs. However, because hydrogen is the lightest atom and has high reactivity to metal and oxide materials, elucidating its impact on AOS thin films has been challenging. Therefore, in this study, we propose controlling the hydrogen quantities in amorphous InSnZnO (a-ITZO) thin films through thermal dehydrogenation to precisely reveal the hydrogen influences on the electrical characteristics of a-ITZO TFTs. The as-deposited device containing 15.69 × 1015 atoms/cm2 of hydrogen exhibited a relatively low saturation mobility of 18.1 cm2/V·s and poor positive bias stress stability. However, depending on the extent of thermal dehydrogenation, not only did the hydrogen quantity and interface defect density (DIT) decrease but also the conductivity and surface energy increased due to the rise in oxygen vacancies and hydroxyl groups in a-ITZO thin films. As a result, the a-ITZO TFT with a hydrogen amount of 4.828 × 1015 atoms/cm2 showed that the saturation mobility improved up to 36.8 cm2/V·s, and positive bias stress stability was remarkably enhanced. Hence, we report the ability to manage the hydrogen quantity with thermal dehydrogenation and demonstrate that high-performance a-ITZO TFTs can be realized when an appropriate hydrogen concentration is achieved.

Global application of a regional frequency analysis to extreme sea levels

Abstract. Coastal regions face increasing threats from rising sea levels and extreme weather events, highlighting the urgent need for accurate assessments of coastal flood risk. This study presents a novel approach to estimating global extreme sea level (ESL) exceedance probabilities using a regional frequency analysis (RFA) approach. The research combines observed and modelled hindcast data to produce a high-resolution (∼1 km) dataset of ESL exceedance probabilities, including wave setup, along the entire global coastline (excluding Antarctica). The methodology presented in this paper is an extension of the regional framework of Sweet et al. (2022), with innovations introduced to incorporate wave setup and apply the method globally. Water level records from tide gauges and a global reanalysis of tide and surge levels are integrated with a global ocean wave reanalysis. Subsequently, these data are regionalised, normalised, and aggregated and then fit with a generalised Pareto distribution. The regional distributions are downscaled to the local scale using the tidal range at every location along the global coastline obtained from a global tide model. The results show 8 cm of positive bias at the 1-in-10-year return level when compared to individual tide gauges. The RFA approach offers several advantages over traditional methods, particularly in regions with limited observational data. It overcomes the challenge of short and incomplete observational records by substituting long historical records with a collection of shorter but spatially distributed records. These spatially distributed data not only retain the volume of information but also address the issue of sparse tide gauge coverage in less populated areas and developing nations. The RFA process is illustrated using Cyclone Yasi (2011) as a case study, demonstrating how the approach can improve the characterisation of ESLs in regions prone to tropical cyclone activity. In conclusion, this study provides a valuable resource for quantifying the global coastal flood risk, offering an innovative global methodology that can contribute to preparing for – and mitigating against – coastal flooding.

THz generation by AlGaAs/GaAs heterostructured p-i-n diode

The generation of terahertz radiation by heterostructure p-i-n AlxGa1−xAs/GaAs diodes excited by femtosecond optical pulses was studied experimentally and using the Monte Carlo method. It is shown that when the reverse bias varies, the terahertz generation mechanism changes. With a positive bias on the p-i-n diode, the THz generation mechanism is due to the reflection of the photoexcited electrons from the interface. With a large internal electric field, THz generation in the p-i-n diode occurs due to the acceleration of electrons at the ballistic stage of their movement in the electric field to velocities significantly exceeding the steady state velocity (“velocity overshoot”). The subsequent sharp decrease in velocity of electrons is associated with their inter-valley transitions from the Γ-valley to the L-valley of the conduction band. At electric fields less than 22 kV/cm, the effect of electric field screening by photoexcited carriers has a significant impact on the formation of photocurrent and, accordingly, on the THz generation mechanism. As the reverse bias decreases, this effect leads to a shift in the maximum of the THz pulse toward shorter times and it begins to dominate at electric fields less than 10 kV/cm.

Bribing to Escape Poverty in Africa

ABSTRACT This study assesses the nexus between bribery and poverty using the Afrobarometer survey. Our data cover 38 countries consisting of three survey rounds and a sample of 151,345 individuals. The empirical strategy is based on multi-level mixed-effects ordered logit regression. The results reveal that while poverty has a positive effect on the spread of bribery, inflation can mitigate the impact. The impact is stronger for people living without basic necessities such as food, water, and medical care. In other words, the results indicate that the impact of poverty on bribery becomes negative when inflation increases. Policy implications are discussed.

How to Support People with Hearing Impairment beyond Hearing aid Provision - A Systematic Review on Self-Management Interventions

People with hearing handicap have to use a whole range of strategies to cope with everyday challenges - they have to self-manage their hearing impairment. While the support of self-management is well established in foreign language audiological rehabilitation programs, there are no recommendations in Germany yet. Therefore, the aim of this systematic review is first to give an overview of existing self-management interventions for people with hearing handicap and then to suggest possible applications in the German care system. A systematic literature search was conducted on PubMed. The articles dealt with self-management interventions for people with hearing impairment. This eligibility criterion was applied to titles, abstracts, and full texts. If eligible, information on the publication, intervention, and evaluation were extracted and qualitatively summarized. The methodological quality of studies was investigated using the NIH assessment tool for interventional studies. 23 papers could be included and show a high heterogeneity regarding methodological quality, applied intervention, and design of evaluation. The interventions pursuing various goals include a wide range of content (e. g., communication improvement or psychosocial aspects) and have been implemented on a group-based, individual-based, or self-administered level. Despite a few studies that failed to demonstrate intervention effects, most evaluations found positive ef-fects of the intervention on hearing impairment, psychological well-being, and communication. The included studies present a high heterogeneity with regard to methodological quality, the intervention conducted, and the evaluation design. Therefore, a summary of the findings was only possible in a qualitative manner. Possibilities of adapting existing intervention programs as well as chances and limits of an implementation in the German health care system are to be discussed in the following. Overall, interventions including self-management support seem to be a profitable complement to sole technical device supply and should be further fostered in German-speaking countries as well.

Assessments of Arctic Cloud Vertical Structure From AIRS Using Radar‐Lidar Observations

AbstractThe Atmospheric InfraRed Sounder (AIRS) aboard Aqua provides essential long‐term data on vertical cloud fraction, particularly valuable in the Arctic region. This study offers a comprehensive assessment of Arctic vertical cloud fraction derived from AIRS through a comparison with independent ground‐ and space‐based radar and lidar observations. In comparison to the measurements at the North Slope Alaska site, results reveal a significant underestimation of low‐level cloud cover by AIRS, especially for near‐surface clouds, while mid‐ and high‐level cloud fractions show better consistency. In comparison to the satellite‐based product from 3S‐GEOPROF‐COMB, the accuracy varies across different underlying surfaces (land vs. sea) and seasons. AIRS shows significant positive biases in mid‐level cloud fraction over sea surfaces with sea ice concentration below 15%, indicating potential limitations in the cloud retrieval algorithm in regions with large sea ice variations. The issue of low‐level clouds identification is primarily caused by the limited penetrating capability of infrared hyperspectral sensing and the accuracy of preceding surface and atmospheric state products, which diminish the accuracy of AIRS low‐level cloud fraction.

Potential Beneficial Effects of Mineral Sunscreens on Acne-Prone Skin

Background: Sunscreens are critical products used against harmful ultraviolet (UV) radiation. However, beyond the effect of sun protection, the inorganic UV filters zinc oxide and titanium dioxide have shown antimicrobial activity. Objective: This study aimed to evaluate the potential additional beneficial effects of mineral sunscreens containing zinc oxide and titanium dioxide as antimicrobial agents on acne-prone skin. Methods: Transepidermal water loss, skin hydration, and skin pH of twelve volunteers were measured before and 2 h after the application of three mineral sunscreens. The antimicrobial activity of the mineral sunscreens was determined against Cutibacterium acnes, Staphylococcus aureus, and Staphylococcus epidermidis in a time-kill test. Results and Discussion: The studied mineral sunscreens did not affect either the stratum corneum hydration or its integrity, but they increased the skin pH from 4 to 6, which could impact the skin microbiota balance. At the same time, the tested mineral sunscreens inhibited Cutibacterium acnes, Staphylococcus epidermidis, and Staphylococcus aureus. Conclusion: This study suggests that the two UV filters can have positive effects on acne-prone skin and, thus, extend the benefits of photoprotective formulations. Nevertheless, further research is currently being conducted.

Fully atomic layer deposition induced InAlO thin film transistors

The atomic layer deposition (ALD) technique has been extensively utilized for depositing metal oxide (MO) thin films, particularly as gate insulators in thin film transistors (TFTs). However, research on MO semiconductors as channel layer materials in TFTs using ALD is limited, especially for fully ALD-fabricated MO TFTs. In this study, fully ALD-fabricated InAlO TFTs were developed, with optimized aluminum doping content and annealing temperature to enhance the electrical properties and stability. The InAlO TFTs, fabricated with a cycle ratio of 15:1 and annealed at 350 °C, exhibit superior performance, including a field-effect mobility of 7.2 cm2/V·s, a subthreshold swing of 165 mV/decade, and an on/off current ratio of 2.3 × 106, with a threshold voltage of only 0.1 V. Additionally, they demonstrated good stability, with a threshold voltage shift of 0.11 V under positive bias stress. The improved electrical properties and stability are attributed to reduced carrier concentration and the inhibition of oxygen defect generation, achieved through appropriate annealing temperatures and aluminum doping. Thus, the development of fully ALD-fabricated high-performance TFTs holds promise for next-generation display technologies as pixel-driving circuits.

High-Performance Tin Oxide Thin-Film Transistors Realized by Codoping and Their Application in Logic Circuits.

Tin oxide is a promising channel material, offering the advantages of being low-cost and environmentally friendly and having a wide band gap. However, despite the high electron mobility of SnO2 in bulk, the corresponding thin-film transistors (TFTs) generally exhibit moderate performance, hindering their widespread application. Herein, we proposed a codoping strategy to improve both the electrical property and the stability of SnO2 TFTs. A comparative analysis between doped and undoped SnO2 was conducted. It is observed that taking advantage of the difference in ionic radii between two dopants (indium and gallium) and the tin ions in the host lattice can effectively reduce impurity-induced strain. Additionally, we investigated the effect of codoping content on SnO2 TFTs. The optimal codoped SnO2 (TIGO) TFTs demonstrate high performance, featuring a field-effect mobility of 15.9 cm2/V·s, a threshold voltage of 0.2 V, a subthreshold swing of 0.5 V/decade, and an on-to-off current ratio of 2.2 × 107. Furthermore, the devices show high stability under both positive and negative bias stress conditions with a small threshold voltage shift of 1.8 and -1.2 V, respectively. Utilizing the TIGO TFTs, we successfully constructed a resistor-loaded unipolar inverter with a high gain of 10.76. This study highlights the potential of codoped SnO2 TFTs for advanced applications in electronic devices.

Improved oxidation resistance of AIP NiCrAlYSi coatings by applying positive bias

The NiCrAlYSi coatings with a bias voltage of −30 V (N-coating) and + 5 V (P-coating) applied on the DD6 superalloy substrate were prepared by arc ion plating (AIP). The microstructure evolution and the oxidation resistance at 1100 °C of the two coatings were investigated. The results show that the positive bias could maintain the Al content from the target material through to the coating by enhancing droplet deposition proportion and resulting in better oxidation resistance. The as-deposited P-coating consists of γ-Ni, γ’-Ni3Al and α-Cr phases with significantly lower pores and ~ 1.1 wt% higher Al content than N-coating. The larger size (1.5 to 3.5 μm) block β-NiAl grains formed within P-coating after annealing at 1050 °C for 2 h, while it was not found in the N-coating. The oxidation parabolic rate constant at 1100 °C of annealed P-coating was confirmed as 3.54 × 10−3 mg2/(cm4·h), ~ 27.6 % lower than N-coating.