Dielectric relaxation characteristics of the stoichiometric SBT thin films have been studied over the frequency range of 10 m 1 ∼10 6 Hz and the temperature range of 25∼400°C. Dielectric and conduction mechanisms are employed in order to obtain a space charge or an interfacial polarization for the SBT films. In the low temperature range (up to 200°C), the dielectric constant just showed a little dispersion with increasing temperature, however, more obvious dispersion occurs in the low frequency range (10 m 1 ∼10 Hz). The maxima of the imaginary part of the dielectric modulus, M", were shifted toward the high relaxation frequency range with increasing temperature. This behavior comes from the hopping process of charge carriers and small polarons in the dielectric films. The activation energy of stoichiometric SBT films measured from the ac conductivity was 0.96 eV. This activation energy was attributed to the excitation of the charge carriers from a set of impurity traps and/or oxygen vacancies.