Polarization In Thin Films Research Articles

Cavity-dumped femtosecond Yb:CALYO laser based on SESAM assisted Kerr-lens mode locking.

In this paper, we present the demonstration of a cavity-dumped Kerr-lens mode-locked femtosecond oscillator based on an Yb:CALYO crystal for the first time. With the assistance of an SESAM, the Kerr-lens mode-locked Yb:CALYO laser delivered pulses with an average power of 2.8 W at a repetition rate of 61.3 MHz, corresponding to a pulse energy of 45.6 nJ. By employing a Pockels Cell consisting of dual β-BBO crystals and a thin film polarizer for cavity dumping, laser pulses of 280 nJ were achieved at both 1 MHz and 10 kHz repetition rates. The shortest pulse duration measured was 233 fs without external compression, resulting in a peak power of 1.06 MW.

Antiferroelectric Heterostructures Memristors with Unique Resistive Switching Mechanisms and Properties.

A novel antiferroelectric material, PbSnO3 (PSO), was introduced into a resistive random access memory (RRAM) to reveal its resistive switching (RS) properties. It exhibits outstanding electrical performance with a large memory window (>104), narrow switching voltage distribution (±2 V), and low power consumption. Using high-resolution transmission electron microscopy, we observed the antiferroelectric properties and remanent polarization of the PSO thin films. The in-plane shear strains in the monoclinic PSO layer are attributed to oxygen octahedral tilts, resulting in misfit dislocations and grain boundaries at the PSO/SRO interface. Furthermore, the incoherent grain boundaries between the orthorhombic and monoclinic phases are assumed to be the primary paths of Ag+ filaments. Therefore, the RS behavior is primarily dominated by antiferroelectric polarization and defect mechanisms for the PSO structures. The RS behavior of antiferroelectric heterostructures controlled by switching spontaneous polarization and strain, defects, and surface chemistry reactions can facilitate the development of new antiferroelectric device systems.

Hundred-watt Ho:YAG oscillator pumped by high-power Tm:YLF laser with orthogonal cylindrical lenses spot shaping

A hundred-watt, linearly-polarized Ho:YAG oscillator, pumped by a 200 W, home-made and s-polarized Tm:YLF laser, was demonstrated. By utilizing a combination of a half-wave plate (HWP) and a thin-film polarizer (TFP), the Tm:YLF laser was split into two orthogonally polarized parts. Each part was significantly reshaped by a system of orthogonally arranged cylindrical lenses and subsequently used to dual-end pump the oscillator. With a total incident pump power of 183 W, a continuous wave (CW) output power of 101 W at 2.1 μm was achieved, with corresponding slope efficiency and optical-to-optical conversion efficiency (OOCE) of 61.6 % and 55.2 %, respectively. Additionally, the beam quality factors, measured in the x and y directions, were 1.59 and 1.35, respectively. Finally, under Q-switched operation at a repetition rate of 20 kHz, a maximum output power of 97 W was achieved, with a corresponding pulse width of less than 34 ns. The central wavelength of the laser was measured to be 2090.2 nm.

Effect of Li concentration on second harmonic generation from widegap ZnMgO thin films

Widegap ZnMgO thin films hold great potential for applications to the high-efficiency generation of deep UV laser via frequency conversion, because of low light propagation loss and reversible polarization. In this work, we studied the effect of Li concentration on the second harmonic generation (SHG) from a-axis oriented ZnMgO thin films with an optical bandgap of about 3.96 eV. The SHG intensity per unit thickness from the ZnMgO thin film with a small Li concentration is approximately 10.7 times larger than the one without Li incorporation. The Li incorporation obviously enlarges interplanar spacing of ( 112̅0 ) plane and reduces the leakage current by three orders of magnitude. X-ray photoelectron spectroscopy measurements suggest the Li incorporation enhances SHG via enhancing electronic polarization. These findings uncover defect complexes based on Li interstitials in oxygen octahedron play a very important role in enhancing the nonlinear polarization of widegap ZnMgO thin films under optical frequency electric field.

Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering

HfO2-based ferroelectric films have been extensively explored and utilized in the field of non-volatile memory and electrical programmability. However, the trade-off between ferroelectric polarization and dielectric constant in HfO2 has limited the overall performance improvement of devices in practical applications. Herein, a novel approach is proposed for the Hf0.5Zr0.5O2/ZrO2 (HZO/ZrO2) nanobilayer engineering, which can effectively regulate the phase structure evolution of HfO2 films to construct a suitable morphotropic phase boundary (MPB). The findings highlight that the top ZrO2 layer can regularly promote the formation of either the ferroelectric o-phase or the antiferroelectric t-phase. An ideal MPB is successfully established in HZO/ZrO2 (6/9 nm) nanobilayer film by carefully optimizing the HZO/ZrO2 thickness ratio, which presents a high dielectric constant of 52.7 and a large 2Pr value of up to 72.3 μC/cm2 without any wake-up operation. Moreover, the HZO/ZrO2 nanobilayer thin films demonstrate faster polarization switching speed (1.09 μs) and better fatigue performance (109 cycles) compared to the conventional HZO solid solution films. The relationship between ferroelectric and dielectric properties can be harmoniously balanced through the designation. The results indicate that the HZO/ZrO2 nanobilayer engineering strategy is quite potential to pave the way for the development of next-generation memory technologies with superior performance and reliability.

Comparative study on the stability of ferroelectric polarization of HfZrO2 and AlScN thin films over the depolarization effect

This study investigates the stability of the (Hf,Zr)O2 (HZO) and AlScN thin films against the depolarization effect. In order to adversely interfere with the polarization screening of ferroelectric (FE) film and induce the depolarization effect, an Al2O3 film was inserted between the TiN bottom electrode and the FE film. Subsequently, to minimize charge injection through Al2O3 films, the double remanent polarization–voltage (2Pr–V) curve was measured employing voltage pulses with 1 μs-length. As the thickness of the Al2O3 film increased, the charge injection through the Al2O3 film decreased, leading to a decrease in the slope of the 2Pr–V curve. The magnitude of the depolarization field applied to the FE film was determined by simulating the 2Pr–V curve using an equivalent circuit model. Subsequently, the proportion of reversed domains during the delay period due to the depolarization effect was measured. It was revealed that HZO films exhibited vulnerability to the depolarization effect, with 16% of domains being reversed. On the other hand, AlScN films demonstrated superior stability, with polarization loss of less than 1%. Ultimately, it was revealed that AlScN films demonstrated superior stability against the depolarization effect compared to HZO films due to their higher coercive field and more uniform polarization distribution across the film area.

Thin-Film Polarizers in Visible Spectral Range Dopped with Quartz Nanoparticles: a Possible Violation of Microhardness Increase Trend During Nanostructuring of Polymer Matrix

Thin-Film Polarizers in Visible Spectral Range Dopped with Quartz Nanoparticles: a Possible Violation of Microhardness Increase Trend During Nanostructuring of Polymer Matrix

P‐192: Advancements in Photoaligned Azo‐Dye Thin‐Film Polarizer with Exceptional Dichroic Ratio

This study presents the development of ultra‐thin azo‐dye polarizers, notable for their minimal thickness (100‐200 nm) and superior optical performance, with polarization efficiency exceeding 99.9%, extinction ratios above 4000, transmittance over 45.3%, and dichoric ratio over 100. Utilizing cost‐effective solution‐processing methods, we fabricate these high‐performance polarizers and determine optimal experimental conditions for peak efficacy. Our research includes comprehensive Scanning Electron Microscopy analyses to understand the microstructural properties of these azo‐dye thin film polarizers, contributing significantly to the field of advanced display technologies.

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Enhancement of remnant polarization in ferroelectric HfO2 thin films induced by mechanical uniaxial tensile strain after the crystallization process

The effect of strain on the ferroelectricity of HfO2 thin films after crystallization was investigated by applying uniaxial mechanical strains to Au/HfO2/TiN metal–ferroelectric–metal (MFM) capacitors. The remnant polarization (2P r) of MFM capacitors increased when tensile strain was applied during polarization switching. This phenomenon should not be attributed to phase transformation from the non-ferroelectric to the ferroelectric phase, taking account of the fast relaxation of 2P r after removal of the mechanical strain and the fact that the crystal structure of HfO2 thin films evaluated by grazing incidence X-ray diffraction measurement was not changed by the tensile strain.

Impact of Carbon-Based Nanoparticles on Polyvinyl Alcohol Polarizer Features: Photonics Applications.

Among different inorganic and organic polarizer elements, thin-film light polarizers occupy a special place because of their flexibility, ease of integration into any optoelectronic circuit, and good functioning in the visible and near-infrared spectral range and can compete with Glan and Nicolas volumetric prisms. This paper presents the results of a study on how carbon-based nanoparticles influence on the basic properties of a well-known PVA-based polymer matrix, using which it is possible to obtain good transparency for parallel light components. An accent is made on graphene oxide nanoparticles, which are used as PVA sensitizers. It was shown for the first time that the structuring of PVA with graphene oxides allows an increased transmittance of the parallel light component to be obtained, saving the transmittance of the orthogonal one. Moreover, the graphene network can increase the mechanical strength of such thin-film PVA-based polarizers and provoke a change in the wetting angle. These advantages make it possible to use graphene oxide-structured thin-film light polarizers based on a PVA matrix as an independent optoelectronic element. Some comparative results for polarizers based on PVA-C70 structures are shown as well.

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films

Hafnia-based oxide thin films exhibit unconventional robust ferroelectricity at the nanoscale, paving the way for advancements in next-generation nanoelectronics. However, the stability and dynamics of ferroelectric polarization in hafnia-based oxides films, particularly at the nanoscale, warrant further exploration. In this study, we delve into the factors influencing the formation of the ferroelectric phase. Our findings illuminate that the confinement effect of the capped layer enhances the stabilization of the metastable orthorhombic phase, thereby bolstering its ferroelectricity and endurance. Furthermore, we identify an unprecedented polarization-switching behavior in HfO2-based ferroelectric films, characterized by a decrease in the remanent polarization and an increase in the coercive field as the temperature drops. This peculiar phenomenon can be ascribed to the reduction in the long-range interaction of polarization dipoles upon cooling, as evidenced by the dielectric spectrum. The diminished long-range interaction results in the emergence of nanodomains and a re-entrant relaxer behavior, offering novel insights into the origin of ferroelectricity and the stability of ferroelectric polarization in hafnia-based thin films. Given the commendable compatibility of Hf0.5Zr0.5O2 films with Si substrates and a pyroelectric coefficient of −62.1 μC/m2·K, they emerge as a prime candidate for sensor device applications.

Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film

Abstract Hafnium zirconium oxides (HZO), which exhibit ferroelectric properties, are promising materials for nanoscale device fabrication due to their high CMOS compatibility. In addition to piezoelectricity, ferroelectricity, and flexoelectricity, this study reports the observation of ferroelasticity using piezoelectric force microscopy (PFM) and scanning transmission electron microscopy (STEM). The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field. Switching of the retentive domains is observed through repeated wake-up measurements. This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

Reversible Optical Control of Polarization in Epitaxial Ferroelectric Thin Films.

Light is an effective tool to probe the polarization and domain distribution in ferroelectric materials passively, that is, non-invasively, for example, via optical second harmonic generation (SHG). With the emergence of oxide electronics, there is now a strong demand to expand the role of light toward active control of the polarization. In this work, optical control of the ferroelectric polarization is demonstratedin prototypical epitaxial PbZrx Ti1-x O3 (PZT)-based heterostructures. This is accomplished in three steps, using above-bandgap UV light, while tracking the response of the polarization with optical SHG. First, it is found that UV-light exposure induces a transient enhancement or suppression of the ferroelectric polarization in films with an upward- or downward-oriented polarization, respectively. This behavior is attributed to a modified charge screening driven by the separation of photoexcited charge carriers at the Schottky interface of the ferroelectric thin film. Second, by taking advantage of this optical handle on electrostatics, remanent optical poling from a pristine multi-domain into a single-domain configuration is accomplished. Third, via thermal annealing or engineered electrostatic boundary conditions, a complete reversibility of the optical poling is further achieved. Hence, this work paves the way for the all-optical control of the spontaneous polarization in ferroelectric thinfilms.

Nanosecond laser damage of 532 nm thin film polarizers evaluated by different testing protocols

Different laser damage testing protocols, including 1-on-1, S-on-1, and Raster Scan, were conducted on 532 nm polarizers to evaluate the damage resistance and mechanisms. A comparison of the laser-induced damage thresholds (LIDTs) revealed different damage characteristics and major contributions to film failure for different polarizations. For P polarization, the LIDTs for the three test protocols were nearly the same because of the stabilization of two typical damage morphologies of flat-bottomed pits and mussel damage pits. For S polarization, the LIDTs for multiple pulses were lowest, where absorptive defect-induced damage was revealed. The damage characteristics of 532 nm polarizers and 1064 nm polarizers have been also compared. The mussel damage pits, which are similar to the typical damage morphologies of ultraviolet (UV) laser damage to fused silica, were observed for the first time in coatings of 532 nm polarizers. This suggests that, the polishing-induced subsurface damage of fused silica substrates may tend to be excited by a short-wavelength laser rather than the fundamental wavelength.

Investigating Isogyres in Ferrofluids and Horocycles from Parlaseric Circle in a Ferrocell

This study explored the complex relationship between magnetic fields and light polarization in thin films of ferrofluid. Utilizing techniques such as polarized light imaging, multipolar expansion, and Mueller matrix formalism, this work investigated the formation of isogyres, which are distinct patterns observed when polarized light passes through the ferrofluid under various magnetic field configurations. The analysis revealed that the alignment of nanoparticles in response to the magnetic field resulted in the formation of a diffraction grating, influencing light polarization. Through the application of Stokes vectors and Mueller matrices, we gained insights into the complex interplay between magnetic fields and optical properties. The experiment presents the evolution of isogyres from straight lines to parabolas under the influence of a hexapolar magnetic field. The Mueller matrix effectively represented the magnetic field's impact on polarized light, highlighting dark regions corresponding to isogyres. We also report the formation of some patterns related to atmospheric optics and their analogy with the formation of patterns of the parlaseric circle and the luminous horocycle.

Effect of boron concentration on local structure and spontaneous polarization in AlBN thin films

The discovery of ferroelectricity in polar wurtzite-based ternary materials, such as Al1−xBxN, has attracted attention due to their compatibility with complementary metal–oxide–semiconductor processes and potential use in integrated non-volatile memory devices. However, the origin of ferroelectricity and the fundamental control of the polarization switching in these materials are still under intensive investigation but appear to be related to local disorder induced from the alloying. In this work, we report the effect of boron alloying on the local structure of Al1−xBxN films deposited by magnetron sputtering. Our results reveal a diminished crystalline order as a function of boron concentration, accompanied by a reduction in the spontaneous polarization. The film disorder is primarily associated with the dissimilar bond lengths between Al–N and B–N and the formation of threading dislocations induced by B incorporation in the structure.

Sensing multiferroic states non-invasively using optical second harmonic generation

The current boost in the search for energy-efficient device paradigms motivates the integration of materials with coexisting and coupled electric and magnetic order parameters into application-relevant architectures. In the so-called multiferroic magnetoelectrics, the understanding of switching events, however, is most of the time obstructed by the complex physics involved and in the non-trivial domain and domain wall configurations. This perspective offers an insightful overview of the most recent progress in the non-invasive optical probe of technology-significant ferroelectricity and antiferromagnetic order: the optical second harmonic generation (SHG). Over the last decade, its use in materials science has evolved, and SHG now enables the monitoring of the emergence of polarization in thin films, even during the epitaxial deposition process. Its long working distance further expedites the probe of multiple order parameters in various environments and under multi-stimuli excitations. The potential for the probe of complex electric dipole textures, such as ferroelectric skyrmions and time-resolved measurements, using SHG-based approaches in the most recent materials systems will be discussed.

Trapezoidal plane-mirror cavity for a single-longitudinal-mode Nd:YAG laser

Diode-laser-pumped all-solid-state lasers are widely used for their high efficiency and excellent monochromaticity. However, existing figure-8 ring cavity single-longitudinal-mode (SLM) lasers, which use two concave cavity mirrors, produce elliptical output spots. Here, we present an SLM Nd:YAG laser with a trapezoidal cavity and planar mirrors, resulting in a circular output spot. Two of the cavity mirrors are Brewster thin-film polarizers (BTFPs), which along with a Faraday rotator and half-wave plate ensure unidirectional operation of an s-polarized intracavity beam. Our design achieves two outputs at 1064 nm: 945-mW s-polarized light from the output mirror and 652-mW p-polarized light from the BTFP cavity mirror. This design has advantages for the manufacturing and downsizing of high-power SLM lasers with isotropic gain media.

A polar transition of spontaneous orientation polarization in organic amorphous thin films

Certain organic molecules autonomously form dipole orientation during a thin-film formation, leading to spontaneous orientational polarization (SOP) even in an amorphous film. Although the polarity of SOP can be controllable by molecular design itself, we demonstrate that a guest–host system also provides a unique tool for controlling SOP. Here, we report that the transition of SOP polarity occurs depending on the concentration of a polar guest molecule in a non-polar matrix. While a 2,8-bis(diphenylphosphoryl)dibenzo-[b,d]thiophene (PPT) film shows negative SOP in the neat film, the polarity could be changed to positive with a concentration increase of the non-polar molecule.