Pi Gate Research Articles

Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor

Advanced high electron mobility transistor (HEMT) with dual front gate, back gate with silicon nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The dependency on DC characteristics and radio frequency characteristics due to GaN cap layers, multi gate (FG and BG), and high K dielectric material is established. Further compared single gate (SG) passivated HEMT, double gate (DG) passivated HEMT, double gate triple (DGT) tooth passivated HEMT, high K dielectric front Pi gate (FG) and back Pi gate (BG) HEMT. It is observed that there is an increased drain current (Ion) of 5.92 (A/mm), low leakage current (Ioff) 5.54E-13 (A) of transconductance (Gm) of 3.71 (S/mm), drain conductance (Gd) of 1.769 (S/mm), Cutoff frequency (fT) of 743 GHz maximum oscillation frequency (Fmax) 765 GHz, minimum threshold voltage (V<sub>th</sub>) of -4.5 V, on resistance (Ron) of 0.40 (Ohms) at V<sub>gs</sub>=0 V. These outstanding characteristics and transistor structure of proposed HEMT and materials involved to apply for upcoming generation high-speed GHz frequency applications.

Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics

The Impact of Aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi Gate (FG) and Back Pi Gate(BG), High K dielectric material such as Hafnium dioxide(HfO2), Aluminium Oxide (Al2O3), Silicon nitride (Si3N4) on Aluminium Galium Nitride/ Gallium Nitride (AlGaN/GaN), Heterojunction High Electron Mobility Transistor (HEMT) of 6nm(nanometer) technology is simulated and extracted the results using the Silvaco Atlas TCAD tool. The importance of High K dielectric materials like Al2O3 and Si3N4 are studied for the proposal of GaN HEMT. AlN, GaN Cap Layers, and High K Dielectric material are layered one on another to overcome the conventional transistor draw backs like surface defects, scattering of the electron, and less mobility of electron. Hot electron effect is overcome by Pi type gate. Therefore, by optimizing the HEMT structure the abilities for certain devices are converted to abilities. The dependency on DC characteristics and RF characteristics due to GaN Cap Layers, Multi gate (FG &BG), and High K Dielectric material is established. Further Compared Single Gate (SG) Passivated HEMT, Double Gate (DG) Passivated HEMT, Double Gate Triple(DGT) Tooth Passivated HEMT, High K Dielectric Front Pi Gate (FG) and Back Pi Gate (BG) Nanowire HEMT. It is observed that there is an increased Drain Current (Ion) of 5.92(A/mm), low Leakage current(Ioff) 5.54E-13 (A) of Transconductance (Gm) of 3.71(S/mm), Drain Conductance (Gd) of 1.769(S/mm), Cutoff frequency(fT) of 743 GHz Maximum Oscillation frequency (Fmax) 765 GHz, Minimum Threshold Voltage (Vth) of -4.5V, On Resistance (Ron)of 0.40(Ohms) at Vgs =0V. These outstanding characteristics and transistor structure of proposed HEMT and materials involved to apply for upcoming generation High-speed GHz frequency applications.

High-Performance Pi-Gate Poly-Si Junctionless and Inversion Mode FET

In this paper, the Pi-gate (PG) poly-Si junctionless (JL) and inversion mode (IM) FETs with a high aspect ratio (A.R. = channel thickness/channel width ~ 3.4) have been successfully fabricated and demonstrated by a method without using the costly lithography technique. This method has some advantages: 1) the thickness of channels can be controlled simply by thickness of poly-Si layer; 2) the shape of channels can be controlled effectively by rectangular silicon nitride (Si3N4) as hard masks; 3) the series resistance can be reduced by raised source/drain configurations; and 4) Si-compatible low thermal budget process. The PG poly-Si JL FETs show excellent electrical performance in terms of low gate overdrive voltage ( $V_{G}$ – $V_{\mathrm{ TH}} = 2$ V), extremely near-ideal subthreshold swing (S.S.) ~68 mV/decade, steep average subthreshold swing (A.S.S.) ~ 73 mV/decade, smaller drain-induced barrier lowering ~9 mV/V, a higher ON/OFF current ratio $\sim 1.1 \times 10^{8}$ ( $\text{V}_{\mathbf {D}} = 1$ V), and a better field-effect mobility ( $\mu _{\mathrm{ FE}}) \sim 35$ (cm2/Vs) as compared with PG poly-Si IM FETs. Thus, these devices are very promising for future 3-D integrated circuits applications.

What the pig ate: A microbotanical study of pig dental calculus from 10th–3rd millennium BC northern Mesopotamia

One of the main questions that zooarcheologists have attempted to answer in their studies of ancient agropastoral economies relates to animal diet. Starch granules and phytoliths, which derive from the plant foods consumed over the course of an animal's life, become imbedded in dental calculus and thus offer direct clues about diet. In this paper, we investigate pig diet with an eye toward understanding husbandry strategies in northern Mesopotamia, the region in which pigs were first domesticated, from the Epipaleolithic though the Early Bronze Age. Our data reveal that pigs consumed an assortment of plant foods, including grasses, wild tubers, acorns, and domestic cereals. Although poor preservation plagued the identification of plant microremains at Epipaleolithic (10th millennium cal. BC) Hallan Çemi, the identification of a diet based on tubers and grasses matches models of wild boar diet. Pigs at 6th millennium Domuztepe, 5th millennium Ziyadeh, and 4th millennium Hacinebi consumed cereals, particularly oats (Avena sp.) and barley (Hordeum sp.), as well as wild plant food resources. Several of the cereal starch granules showed evidence of cooking, indicating that pigs had access to household refuse beginning at least in the late Neolithic. Moreover, calculus from morphologically wild specimens also contained cooked cereal grains. This points to a close relationship between wild boar populations and human settlements in the Neolithic and beyond. Preservation was poor for 3rd millennium sites in the study, including Atij, Raqa'i, Ziyadeh, and Leilan, but the available data suggest that pigs ate oats, barley and other Triticeae (the tribe that includes wheat, barley, and goatgrass), and other grasses. This may represent foddering practices in the Early Bronze Age.

Increased memory performance of a Pi (Φ) gate structure in a 3-D stackable vertical gate NAND flash memory

In this study, we propose a pi(Φ)-gate structure that improves the performance of vertical gate (VG) NAND flash memory structures. The pi-gate (PG) structure extends the gates along the top and the bottom surfaces of the silicon layer, widening the channel width and resulting in an increased device current. The extended gates also enhance gate coupling with the channel by allowing more of the gate field to interact with the channel, giving lower threshold voltages (20% reduction) and lower subthreshold swings (21% reduction) and greatly enhancing the switching characteristics. Also, a PG width of 18 nm resulted in an increase in the programmed threshold voltage shift of 39% compared to that of the conventional VG-NAND structure. The PG structured VG-NAND may allow a non-volatile memory to be further integrated by giving solutions to the high channel resistance and reduced memory performance issues related to integration in vertical dimensions.

DC AND AC ANALYSES OF NOVEL SOI MOSFET DEVICES USING 2D AND 3D NUMERICAL SIMULATIONS

Novel devices such as Double Gate (DG), Triple Gate (TG) or FinFET, Pi-Gate (PG) and Omega-Gate SOI MOSFETs are potential candidates for achieving the performance predictions of the International Roadmap of the Semiconductor Industry Association. In this paper, we analyzed the DG, TG and PG in comparison with the Single Gate (SG) SOI MOSFET using the commercial 3D numerical simulator SILVACO in the DC and AC regimes from subthreshold region to strong inversion and saturation regions. In the DC regime, multiple gate devices are superior to SG device from micrometer down to nanometer scale lengths. In the AC regime, the advantages of the multiple gate devices over SG devices are significant especially when the channel length reduces below 100 nm. For the first time, we have shown the great interest and potential of these multiple gate devices for high frequency analog applications.

Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization

Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), and Omega-Gate Silicon-on-Insulator (SOI) MOSFETs are potential candidates for achieving the performance targets of the International Roadmap of the Semiconductor Industry Association. In this paper, wideband experimental and three-dimensional simulation analyses have been carried out to compare the analog/RF performance of DG, TG/FinFET, PG, and single-gate (SG) SOI MOSFETs. The characteristics of the multiple-gate devices were analyzed in the dc and ac regimes from subthreshold region to strong inversion and saturation regions. In both regimes, the advantages and limitations of the multiple-gate devices over the SG structure are discussed for channel length scaling well below 100 nm. To the authors' knowledge, it is the first time that such extensive results and analyses are presented on the potential of these novel devices for high-frequency analog applications.

Vibrational molecular quantum computing: Basis set independence and theoretical realization of the Deutsch–Jozsa algorithm

The phase of quantum gates is one key issue for the implementation of quantum algorithms. In this paper we first investigate the phase evolution of global molecular quantum gates, which are realized by optimally shaped femtosecond laser pulses. The specific laser fields are calculated using the multitarget optimal control algorithm, our modification of the optimal control theory relevant for application in quantum computing. As qubit system we use vibrational modes of polyatomic molecules, here the two IR-active modes of acetylene. Exemplarily, we present our results for a Pi gate, which shows a strong dependence on the phase, leading to a significant decrease in quantum yield. To correct for this unwanted behavior we include pressure on the quantum phase in our multitarget approach. In addition the accuracy of these phase corrected global quantum gates is enhanced. Furthermore we could show that in our molecular approach phase corrected quantum gates and basis set independence are directly linked. Basis set independence is also another property highly required for the performance of quantum algorithms. By realizing the Deutsch-Jozsa algorithm in our two qubit molecular model system, we demonstrate the good performance of our phase corrected and basis set independent quantum gates.

The Effect of Food Deprivation Length of Pair House Pigs on the Running Speed and Feeding Activity in Solitary and Social Conditions

The purpose of this experiment was to study the feeding behavior and running speed under various feed deprivation lengths and social environments. Three trials were conducted. Trial 1: ten pigs were trained individually to run a course and eat their feed at the end of the course. The pigs were deprived feed for 1, 5, 10 or 20 h. Trial 2: 1. Two pigs ran and ate together. Both pigs had 5 h of feed deprivation before the run (D5). 2. Two pigs ran and ate alone, but both pigs had 5 h of feed deprivation before the run (S5). 3. Two pigs ran and ate together. Both had 1 h of feed deprivation before the run (D1). 4. Two pigs ran and ate alone and both pigs had 1 h of feed deprivation before the run (S1). 5. Two pigs ran together, one had 5 h of feed deprivation, and the other had 1 h of feed deprivation before the run (51). Trial 3: 1. On the 1st day 5 pairs of pigs had 5 h feed deprivation and could eat feed together at (B) point (D1). 2. On the 2nd day the pigs ran and ate alone at (B) point after 5 h of feed deprivation. Feed was obtainable (D2). On the 3rd to 6th days, the pigs ran in pairs after 5 h of feed deprivation and only the dominant pig ate feed at point (B). The inferior pig was chased back to room and fed there. This stage was continued for four consecutive days, d 3 to 6. In trial 1, the running speed of pigs increased with the length of feed deprivation until 10 h, then being stable afterwards. Total feeding time increased with the length of feed deprivation (p 0.05). In trial 2, nine of ten pigs in treatment D5 ran faster than those in S5. Seven of the ten pigs in treatment S1 ran faster than those in treatment D1. The pigs in treatment D5 had significantly higher feed intake (p<0.001) and eating speed (p<0.05) than the pigs in other treatments. In trial 3, there were significant differences on running speed between D1 and D6 (p<0.01) and between D2 and D1, D3, D4 and D5. The inferior pig ran faster in D2 but from 3 to 6 it was the dominant pig that showed the greatest speed in completing the whole course. The results demonstrated that the pigs with low feeding motivation may cause low running speed to feed and low feed intake of the neighbor when compared with pigs kept individually. (Asian-Aust. J. Anim. Sci. 2004. Vol 17, No. 2 : 271-277)

Ingestion of earthworms, Pontoscolex corethrurus, by village pigs, Sus scrofa papuensis, in the highlands of Papua New Guinea

In a short (28-day) experiment, weanling village pigs, Sus scrofa papuensis, gained weight at the rate of 147 g daily when foraging on tethers in harvested sweet potato gardens, Impomoea batatas (L) Lam., and fed additional raw sweet potato tubers. A comparable group of pigs that had no access to soil lost weight and exhibited signs of protein malnourishment. The highly significant difference in growth rate was thought to be due to the foraging pigs consuming earthworms, Pontoscolex corethrurus, which were abundant in the soil. Ten foraging pigs were closely observed over a period of 3 months. Daily weight gains increased to 190 g, and it was recorded that each pig ate between 414 and 1224 earthworms daily (half the daily amount being eaten in the first hour of foraging), and that this activity was predominant. As the day progressed, the pigs spent more time lying down, standing doing nothing, or eating green vegetation. These observations are discussed in the context of local pig husbandry.