Abstract We present a novel approach for the fabrication of single pore microcavities in silicon (111) based on Silicon-on-Insulator substrates and a combination of optical and electron-beam lithography, reactive ion etching and anisotropic wet etching techniques. Using a dedicated sequence of physical vapor deposition, electroplating and surface chemical oxidation, a silver/silver chloride (Ag/AgCl) reference bottom electrode was integrated into the cavity. We have fabricated cavities of volume ∼180 fl terminated at their top with silicon-nitride membranes featuring a single access pore of diameter 150–500 nm, each. Scanning electron microscopy revealed the cavity structure to comprise a hexagonal geometry top silicon nitride membrane and a triangular bottom plane. Atomic force microscopy analysis was performed on the AgCl surface, showing a root-mean-square surface roughness of 43.5 nm, hence resulting in a favorable high surface area of the electrode. We fully characterized our cavities filled with potassium chloride electrolyte solutions in electrical measurements to verify functionality of the integrated reference electrodes. Measured ion currents were stable over 1 d and scaled properly with pore diameter and salt concentration. We suggest our device to serve as platform for the controlled investigation of (bio-) electrochemical processes in smallest confined volumes.

Curvilinear masks have gained significant attention for their advantages in optical lithography. To fully using these advantages, curvilinear optical proximity correction (OPC) methods are applied, in which the movement direction and distance of control points are key parameters. However, these methods often neglect the optimization of movement direction. This paper proposes a curvilinear mask OPC method using the boundary iteration optimization method to simultaneously adjust both movement direction and distance. This method enhances optimization degrees of freedom by defining the regions of interest around control points in mask patterns and their corresponding print images. Simulation results demonstrate that the boundary iteration optimization method achieves higher fidelity of print image while reducing the computational time.

Organic field-effect transistors (OFETs) require reliable micro- and nanoscale patterning of semiconducting layers, yet conjugated polymers have long been considered incompatible with photolithography due to dissolution and chemical damage from photoresist solvents. Here, we present a photolithography-compatible strategy based on doping-induced solubility conversion (DISC), demonstrated using poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT). AuCl3 doping reversibly modulates the benzoid/quinoid resonance balance, lamellar stacking, and π–π interactions, suppressing solubility during lithographic exposure, while dedoping restores the intrinsic electronic properties. Using this approach, micropatterns with linewidths as small as 2 µm were fabricated in diverse geometries—including line arrays, concentric rings, dot arrays, and curved channels—with high fidelity; quantitative analysis of dot arrays yielded mean absolute errors of 48–66 nm and coefficients of variation of 2.0–3.9%, confirming resolution and reproducibility across large areas. Importantly, OFETs based on patterned PBTTT exhibited charge-carrier mobility, threshold voltage, and on/off ratios comparable to spin-coated devices, despite undergoing multiple photolithography steps, indicating preservation of transport characteristics. Furthermore, the same DISC-assisted lithography was successfully applied to other representative p-type conjugated polymers, including P3HT and PDPP-4T, confirming the universality of the method. This scalable strategy thus combines the precision of established lithography with the functional advantages of organic semiconductors, providing a robust platform for high-density organic electronic integration in flexible circuits, biointerfaces, and active-matrix systems.

The study of three-dimensional (3D) reconstruction of the skin enables the morphological analysis of tissues and is of great importance for biomedical research. This work proposes a method based on the projection of diffractive interferences onto the skin using an optical system, followed by surface reconstruction. The research includes the fabrication of the optical device, the capture of images of the projected patterns, and the 3D reconstruction through a neural network algorithm. The device developed to generate diffraction interferences consists of a laser with λ = 532 nm, a circular optical guiding mesh formed by tungsten wires wrapped in a rigid polymer with dimensions of 12.8 mm × 15 cm, and a graphite-based diffractive grating. The system operates when a beam emitted by the laser passes through the diffractive grating, generating constructive interference and projecting light spots onto the skin surface. The diffractive grating was fabricated by means of direct laser writing on a silicon carbide (4H-SiC) substrate. In this process, a laser with λ = 1024 nm, power of 15 W, speed of 400 mm/s, and frequency of 40 kHz scanned the SiC surface, forming a grid with parallel lines spaced 0.1 mm apart. The process can be visualized in Figure 1(a,b). After fabrication, structural characterization was performed to understand the type of structure formed and the resulting material. First, focused ion beam (FIB) scanning electron microscopy was used, obtaining high-resolution images shown in Figure 1(c). Energy-dispersive spectroscopy (EDS) analysis indicated that, before writing, SiC had a 1:1 silicon-to-carbon ratio. After writing, an increase of approximately 10% in the carbon content and a reduction in the silicon content, in the same proportion, were observed, suggesting silicon sublimation and the formation of grains composed of carbon chains. To deepen the analysis, Raman spectroscopy was performed with a λ = 532 nm laser and a grating of 1800 lines/mm. The spectrum obtained in the highlighted region of Figure 1(d) revealed the formation of a graphitic film, with characteristic bands, including the D, G, and 2D bands. With the grating characterized, the device elements were integrated as shown in Figure 1(e), whose inset displays the writing of the diffractive grating lines. Figures 1(f), 1(g), and 1(h) compare the interferences generated: (f) by the diffractive grating on an arbitrary surface, (g) by the SiC on the surface of human skin, and (h) by the diffractive grating on the surface of human skin. For 3D skin reconstruction, images were captured at different projection angles (0º, 30º, 60º, 90º, 120º, 150º, and 180º), improving reconstruction accuracy. The distances between light points in the images were used in a stereo triangulation model — a computer vision technique that allows the estimation of surface depth, as shown in Figure 1(i). From points C1 and C2 in two images, it was possible to locate point Z by triangulation, allowing three-dimensional reconstruction of the skin. This process was implemented in a convolutional neural network (CNN), which receives the captured images, detects the edges, and applies stereo triangulation to predict depth. From this, a point cloud was generated and later interpolated to form a continuous map of the skin surface, as illustrated in Figure 1(j). This study demonstrates that the proposed optical device is capable of projecting well-defined diffractive interferences onto the skin, enabling its reconstruction. Although SiC is not an inexpensive material, the use of direct laser writing has provided a low-cost alternative to conventional methods such as optical lithography or film deposition. It is worth noting that this work was an initial trial using the skin of a team member, which eliminated the need for ethics committee approval for clinical studies in humans. However, future studies intend to improve the spatial resolution of the device, reduce noisy optical signals, and validate the results with a larger number of samples. Figure 1

In the report the energetics of porous silicon nanocrystallites nc-PS and nc-PS/c-Si interface applied to the process of plasmonic structure Me-PNP/PS formation on the porous silicon are considered. Shown that the high surface energetics of nc-PS and nc-PS/c-Si to the plasmonic structure Me-PNP/PS formation in during single-stage etching of pores and deposition of plasmonic metal nanoparticles Me-PNP [1].The main disadvantage of plasmonic structures based on por-Si Me-PNPs/por-Si is the lack of periodicity in the arrangement of nc-Si/por-Si.In this work, we demonstrate the possibility of creating homogeneous periodic plasmonic structures Ni-PNP/por-Si, Ni/Ag-PNP/por-Si and Ag-PNP/por-Si by masking the wafer surface using optical lithography, followed by pore formation and the deposition of plasmon-active metal nanoparticles (Me-PNPs) in a single-stage metal-stimulated electrochemical etching process. W. Boukhvalov et al. RSC Adv., 2025, 15, 6794–6802. DOI: 10.1039/d5ra00703h Figure 1

Scaled and high-quality insulators are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and hot electron transistors, the production of which is constrained by the scarcity of bulk layered wide bandgap semiconductors. In this research, the synthesis of a new 2D insulator, monolayer InO2, which differs in stoichiometry from its bulk form is presented, over a large area (>300 µm2) by intercalating at the epitaxial graphene (EG)/SiC interface. By adjusting the lateral size of graphene through optical lithography prior to the intercalation, the thickness of InO2 is tuned such that it is 85% monolayer. The preference for monolayer formation of InO2 is explained using molecular dynamics and density functional theory (DFT) calculations. Additionally, the bandgap of InO2 is calculated to be 4.1eV, differing from its bulk form (2.7eV). Furthermore, MOS-based Schottky diode measurements on InO2 intercalated EG/n-SiC demonstrate that the EG/n-SiC junction transforms from ohmic to a Schottky junction upon intercalation, with a barrier height of 0.87eV and a rectification ratio of ≈105. These findings introduce a new addition to the 2D insulator family, demonstrating the utility of monolayer InO2 as a barrier in vertical electronic devices.

Locally excited surface plasmon polaritons (SPPs) induced scanning near-field optical lithography on Ag nano-film

Optical holography has undergone rapid development since its invention in 1948, but the accompanying speckles with alternating dark and bright spots of randomly varying shapes are still untamed now due to the intrinsic fluctuations from irregular complex-field superposition. Despite spatial, temporal and spectral averages for speckle reduction, holographic images cannot yet meet the requirement for high-homogeneity, edge-sharp and shape-unlimited features in optical display and lithography. Here we report that holographic speckles can be removed by narrowing the probability density distribution of encoded phase to homogenize optical superposition. Guided by this physical insight, an Adam-gradient-descent probability-shaping (APS) method is developed to prohibit the fluctuations of intensity in a computer-generated hologram (CGH), which empowers the experimental reconstruction of irregular images with ultralow speckle contrast (C = 0.08) and record-high edge sharpness (~1000 mm−1). These well-behaved performances revitalize CGH for lensless lithography, enabling experimental fabrication of arbitrary-shape and edge-sharp patterns with spatial resolution of 0.54λ/NA.

With the development of extreme ultraviolet (EUV) lithography technology to higher numerical aperture (NA), it provides higher resolution imaging quality, which may be more sensitive to the phase defect in EUV mask. Therefore, it is necessary to comprehensively understand the effect of phase defect on the imaging quality depending on the NA. We simulated aerial images of patterned EUV masks for the EUV lithography exposure tool of NA = 0.55 and NA = 0.33 using the rigorous coupled-wave analysis (RCWA) method. The results shows that higher NA enhances the contrast of aerial images, which, in turn, provides greater tolerance for phase defect. This indicates that high NA can mitigate the negative impact of phase defect on imaging quality to some extent. Furthermore, it is found that both the defect signal and the intensity loss ratio of the aerial image first increase and then decrease as the width of the phase defect increases, due to the height/width ratio of the phase defect. Meanwhile, the defect width corresponding to the maximum phase defect signal tends to become smaller as the NA becomes larger. It is also worth noting that when NA = 0.33, variations in the position of the phase defect led to fluctuations in the CD error due to the shadow effect of the absorber, while it diminishes at NA = 0.55. This is because a higher NA of 0.55 provides a stronger background field, which suppresses the shadow effect of the absorber more effectively than it does at NA = 0.33.

Platinum ditelluride (PtTe2) is a type‐II Dirac semimetal featuring tilted cones in its electronic band structure, which leads to intriguing electronic and optical topological properties. Here, a large area growth process is presented for the synthesis of PtTe2 films with nanoscale thickness by sputtering deposition of a Pt precursor layer and subsequent tellurization at 450 °C. Although the Pt deposition step does not pose stringent limitation on the substrate choice, it is demonstrated that the heating rate during the tellurization step can induce a significant thermal‐induced strain when the process is extended from silicon dielectric transparent silica substrates, leading to macroscopic wrinkling of the PtTe2 film. Thus, a slower tellurization process is optimized, successfully resulting in stress‐free growth even on dielectric substrates. Additionally, the same new process repeated on silicon substrates shows a threefold enhanced minimum grain size compared to the original process. These accomplishments, combined with the scalability of the growth technique and the deterministic material patterning achieved by optical lithography, are crucial for a facile integration of PtTe2 in any kind of device.

Lithography remains a cornerstone of modern micro- and nanoelectronics, defining the limits of miniaturization, production efficiency, and the overall competitiveness of semiconductor technologies. As semiconductor manufacturing becomes increasingly dependent on a small number of global suppliers, understanding patent activity in lithographic equipment is of strategic importance. This study provides a comprehensive patent landscape analysis of lithographic technologies and equipment over the past two decades (2004–2024). The analysis was conducted using international patent databases (PatSearch, Espacenet, Orbit Questel) and covered core IPC classes related to optical, electron-beam, X-ray, nanoimprint, and maskless lithography. Both Russian and international patents were examined to assess global trends and national contributions. The results highlight a strong concentration of patents in leading countries such as China, the United States, Japan, South Korea, and Taiwan, with corporate leaders including ASML, Carl Zeiss SMT, TSMC, Samsung, Canon, and Nikon shaping the global market. The study shows that while China demonstrates rapid growth driven by national strategies of technological independence, European countries like the Netherlands and Germany maintain a strategic role due to the presence of unique corporate champions such as ASML and Carl Zeiss SMT. For Russia, the findings emphasize the importance of developing indigenous capabilities in lithographic equipment. Current initiatives aimed at 350–130 nm nodes, along with research in advanced fields such as EUV, X-ray, and nanoimprint lithography, provide a foundation for reducing dependence on imports and building long-term technological sovereignty.

High‐resolution patterning of colloidal perovskite nanocrystals (PNCs) is essential for next‐generation display technologies, yet conventional approaches relying on exogenous photosensitive ligands or additives often compromise optical properties and colloidal stability. Here, we present a nondestructive ligand modification strategy based on olefin metathesis, in which original oleic acid and oleylamine ligands are converted into metathesized ligands featuring dual anchoring groups and shortened chains. This structural transformation enhances colloidal stability through stronger chelation and reduced conformational entropy of possible ligand configurations. The removal of sterically hindering hydrocarbon chains exposes reactive alkene moieties, enhancing the photosensitivity of PNCs. The resulting metathesized PNCs (PNC‐M) exhibit excellent photoluminescence quantum yield (PLQY) retention (>93% after 3 weeks) and strong resistance to structural degradation under ambient conditions. Molecular dynamics simulations confirm the strengthened surface–ligand interactions in PNC‐M, consistent with the experimentally observed structural robustness. Furthermore, PNC‐M enables efficient direct optical lithography at substantially reduced UV doses via alkene polymerization and hydrothiolation, clearly outperforming pristine PNCs (PNC‐P). This strategy offers a general, nondestructive ligand engineering method for various emissive nanocrystals, including II–VI and III–V quantum dots, and facilitates high‐resolution lithography under reduced UV exposure by leveraging the enhanced photosensitivity imparted by olefin ligand metathesis.

Recently, diffractive optics systems have garnered increasing attention due to their myriad benefits in various applications, such as creating vortex beams, Bessel beams, or optical traps, while refractive optics systems still exhibit some disadvantages related to materials, substrates, and intensity shapes. The manufacturing of diffractive optical elements has become easier due to the development of lithography techniques such as direct laser writing, photo lithography, and electron beam lithography. In this paper, we improve the results from previous research and propose a new methodology to design and fabricate advanced binary diffractive optical elements that achieve a square focal spot independently, reducing reliance on additional components. By integrating a binary square zone plate with an axicon zone plate of the same scale, we employ machine learning for laser path optimization and direct laser lithography for manufacturing. This streamlined approach enhances simplicity, accuracy, efficiency, and cost effectiveness. Our upgraded binary diffractive optical elements are ready for real-world applications, marking a significant improvement in optical capabilities.

Abstract Suspended nanostructures have found widespread applications (e.g., photodetectors, displays, and sensors) due to their unique properties, such as high surface‐to‐volume ratio (H‐SVR), high mass transport, and low‐power etc. Various suspended nanostructures have been fabricated using existing nanofabrication techniques (e.g., electron beam, optical lithography, and layer‐by‐layer assembly). However, realizing the fabrication of double‐layer suspended nanostructures remains a significant challenge. Herein, a method for fabricating large‐area, uniform, and well‐arrayed double‐layer suspended nanostructures is presented using plasma‐assisted nanotransfer printing (PA‐nTP). Double‐layer nanostructures are prepared via nanoimprint lithography and e‐beam evaporation. Oxygen plasma treatment reduces the bonding force between the nanoimprinted resin, allowing gold nanodots suspended atop nanohole structures to be transferred onto the silicon (Si) substrate. The developed structures serve as substrates for surface‐enhanced Raman scattering (SERS) and templates for hollow Si nanostructures. The Au‐coated 3D double‐layer suspended nanostructures enhance SERS performance by a factor of 1.5 × 106 compared to flat substrates. Additionally, hollow Si nanostructures fabricated through metal‐assisted chemical etching (MACE) improve the hydrogen (H2) sensor response from 2.54% to 165% under 1% H2, compared to solid Si nanostructures. Therefore, this method provides a feasible pathway for advancing nanofabrication in applications such as biological/chemical sensors and optoelectronics.

The sun bathes our planet with far more energy than humankind will possibly ever need (> 8,000 times the current demand). Yet, sustainable energy provision is among the most pressing challenges faced today. In order to unlock the vast potential of clean solar energy, we need disruptive technologies capable of efficiently harvesting sunlight, while being deployable at unprecedented scales. Available commercial photovoltaics (PV) can hardly cope sustainably with the sheer scale of this challenge. Silicon solar panels are the major commercial PV, they are based on a very Earth-abundant element, but their fabrication is extremely energy intensive. Conversely, thin film solar panels based on CdTe and Cu(In,Ga)Se2 (CIGS) require far less energy to produce, but some of their constituent elements are quite rare on the Earth’s crust. Hence, in both cases, the short term economic and ecologic sustainabilities are dubious. Recently, an advanced PV concept, called microconcentrator PV [1], has been conceived, which is free from raw materials availability constraints and is based on sunlight absorbers requiring low energy to grow. Additionally, semi-transparent panels could be created, consisting of stripes having width on the order of 100 micrometers [2]. To demonstrate such advanced PV concepts at laboratory scale, research groups have been using optical projection lithography (OPL), generating arrays of Cu(In,Ga)Se2 circles with tens of micrometer diameter. However, OPL cannot be scaled credibly to terawatt deployment. Industrial uptake of microconcentrator PV is only possible with a technique that ensures both high semiconductor quality, and high throughput at capital expenditure comparable to or lower than currently available PVs. Inspired by the research of Gary Friedman on ferrofluid lithography [3], a disrupting microfabrication technique is being pursued within REMAP [5], and e-APP projects [6]. Our intent is to pioneer a method that could be scaled economically to deploy terawatts of microconcentrator or semi-transparent PV [4]. Herein, we outline the progress made on the formulation of magnetorheological electrolytes: bifunctional fluids intended for effective reusable masking, from synthesis to application. Acknowledgements The Authors acknowledge funding from the European Commission PathFinder Open programme under grant agreement No. 101046909 (REMAP, reusable mask patterning). This work was also supported by the European Union and by the Italian Ministry of University and Research through the Clean Energy Transition Partnership scheme under grant agreement No. 2022-00327 (TRANSMIT, semi-transparent micro-striped thin-film photovoltaics for energy-harvesting windows). This work was supported in part by the Italian Ministry of Foreign Affairs and International Cooperation under grant agreement No. PGR11541 (e-APP, empowering advanced photovoltaic pioneers). Funded by the European Union. Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union or European Innovation Council and SME Executive Agency (EISMEA). Neither the European Union nor the granting authority can be held responsible for them.

As the critical dimension continues to shrink, the mask three-dimensional topography (Mask3D) effects must be taken into account for accurate vectorial modeling of lithographic imaging. In applications such as full-chip simulations as well as mask optimizations, the method of Abbe imaging is unviable due to its high computational cost. In contrast, the conventional formulation of Hopkins imaging is computationally efficient but lacks the generality to incorporate Mask3D effects, which depend on the illumination angle of incidence. Therefore, it is of great importance to develop a Mask3D-compatible Hopkins formulation of optical imaging. This paper presents a full-vectorial Hopkins imaging model that seamlessly integrates Mask3D effects by thoroughly considering the propagation of the vectorial electromagnetic field in the optical lithography system. A multi-dimensional vectorial transmission cross coefficient (TCC) is constructed to accurately respond to the polarization components of the mask transfer matrix in Mask3D models. The vectorial TCC decomposition architecture is developed based on the Lanczos algorithm, which significantly accelerates the generation of optical kernels and aerial images. The proposed model is compatible with off-axis illumination configurations, ensuring the accurate capture of incident-angle-dependent Mask3D behaviors. Simulation results demonstrate that the proposed model achieves full compatibility with common Mask3D models, delivering high imaging efficiency for the full-chip optical proximity correction.

Abstract2D materials garner significant research interest due to their unique properties. However, fabricating 2D material electronic devices requires arraying these materials, which often leads to issues like residual photoresist and the need for expensive equipment such as E‐beam and optical lithography. To address these challenges, advanced nanopatterning techniques are essential. Atomic force microscopy (AFM)‐based local anodic oxidation (LAO) is a low‐cost method that avoids photoresist residues and can etch, oxidize, or alter material properties. This review summarizes the development of AFM LAO technology for 2D materials, discussing its reaction mechanisms, applications, and influencing factors. It covers the use of AFM LAO for nanolithography, oxidation, reduction, and device applications in materials like graphene, h‐BN, TMDs, BP, and oxides. The review also examines the challenges and research gaps that remain, including technical obstacles and areas requiring further exploration. Finally, it offers insights into the future prospects of AFM LAO in 2D material‐based nano‐designs and devices, highlighting both its potential advantages and limitations.

Direct optical lithography is a promising method for the high-resolution patterning of colloidal quantum dots (CQDs) in optoelectronic devices. However, this approach requires photo-cross-linkers that ensure strong chemical binding without degrading CQD ligands, while also supporting efficient charge transport. In this study, we compare two cross-linkers, 4,4'-thiobisbenzenethiol (TBBT) and biphenyl-4,4'-dithiol (BPDT), to evaluate their impact on CQD optoelectronic performance. Density functional theory (DFT) calculations reveal that the biphenyl structure of BPDT enables greater π-orbital overlap and a narrower bandgap than TBBT, which contains sulfur-conjugated units. As a result, BPDT enhances charge injection, preserves photoluminescence, and improves the external quantum efficiency of patterned CQD light-emitting diodes. These findings provide molecular-level insight into cross-linker design strategies for efficient, high-resolution patterning of CQD-based optoelectronics.

In this work, we report the synthesis, characterization, and properties of Ni- and Ag-based plasmonic nanoparticles (PNPs) incorporated into a porous silicon (por-Si) matrix fabricated by masking the wafer surface using optical lithography and subsequent pore formation with the deposition of plasmonic-active metal nanoparticles (Me-PNPs) by single-stage metal-assisted electrochemical etching (EMACE). Preliminary masking of the silicon wafer surface using optical lithography and subsequent pore etching by the EMACE method with a simultaneous deposition of Me-PNPs allows for the fabrication of a periodic plasmonic structure, which demonstrates an enhancement of Raman signal, photoluminescence, and an improvement in water evaporation processes. Nickel-doped plasmonic structures created using photolithography and Ni+-ion implantation have high chemical stability due to the formation of nickel silicides (NiSi) in the surface layer. Silver-doped plasmonic structures on porous silicon, Ag-PNPs/por-Si, demonstrate a substantial enhancement of the Raman scattering signal at frequencies corresponding to the nanocrystalline phase, nc-Si, and high visible photoluminescence. The luminosity of silver plasmonic structures is due to the radiative properties of the Ag-PNPs/por-Si plasmonic structure, consisting of silver nanoparticles (Ag-PNPs) and porous silicon nanocrystallites (NC/por-Si). The calorific value of plasmonic structures on porous silicon Me-PNPs/por-Si depends on the time of the metal-stimulated etching of pores and the deposition of plasmonic nanoparticles (PNPs). The calorific value of the silver plasmonic structure Ag-PNPs/por-Si is higher than that of Ni-PNPs/por-Si and Ni/Ag-PNPs/por-Si. It exceeds the efficiency of known solar thermal vapor generators and is equal to Ea = 7.58 kg·m–2·h–1. The obtained results have important applied values in the technology of micro- and nanoelectronics for the fabrication of radiating devices and appliances using chemical, electrochemical etching methods; highly efficient solar thermal generators.

The precise patterning of colloidal quantum dots (QDs) is essential for fabricating high-resolution subpixels in optoelectronic devices, including quantum dot light-emitting diodes (QLEDs). However, conventional photolithographic methods using photoresists often result in QD swelling, pattern distortion, and degradation of the optical properties. To overcome these limitations, we propose a direct optical lithography (DOL) approach without a photoresist, utilizing 4-(3-trifluoromethyl)-3H-diazirin-3-yl)benzoic acid (TDBA) as a carbene cross-linker. This method enables the formation of high-resolution QD patterns with feature sizes as small as ∼2 μm while preserving their optical properties. Furthermore, postpatterning thiol-ene treatment using pentaerythritol tetrakis(3-mercaptopropionate) (PETMP) significantly enhances the photoluminescence quantum yield (PLQY), achieving increase compared to pristine QDs. As a proof of concept, we demonstrate red-emitting cross-linked QLEDs with a maximum external quantum efficiency (EQEmax) of 10.3%. Additionally, semitransparent QLEDs incorporating red, green, and blue QDs were fabricated to demonstrate the applicability of this approach for the next generation display applications. Our strategy provides a scalable, high-performance patterning technique with broad potential for advanced optoelectronic devices.