Photoresponse Characteristics Research Articles

Inorganic Semiconductor-Based Flexible UV Photodetector Arrays Achieved by Specific Flip-Chip Bonding.

In recent years, flexible UV photodetectors (PDs) with complex environmental adaptability and great wearability have attracted the attention of researchers worldwide. Wide bandgap inorganic semiconductor materials with excellent optoelectronic properties and mechanical stability are key functional materials for UV PD devices. However, the high temperature processing and inherent brittleness limit the further application of high-quality inorganic semiconductors in the field of flexible optoelectronics. In this work, we develop a specific flip-chip bonding fabrication technique that utilizes high-temperature treated inorganic semiconductor materials for high-performance flexible UV detection devices. Leveraging this technique, a 7 × 7 pixel flexible UV photodetector array (UV-FPDA) device based on a vertical architecture Mg-doped ZnO/NiO (Mg:ZnO/NiO) heterojunction transistor is built. The UV-FPDAs exhibit a high responsivity of 75.8 A/W and an outstanding detectivity of 8.5 × 1012 Jones. Besides, the UV-FPDAs also demonstrate excellent bending stability. Furthermore, the photoresponse characteristics of each pixel are trained and learned by an artificial neural network to achieve clear imaging of UV light information. Our results provide a new pathway for the application of inorganic semiconductors in the field of high-performance flexible UV photodetection.

Enhancing tetrafullerene based photosensors and photovoltaic cells by graphene oxide doping

This study explores the postulated potential of tetrafullerene as a charge transport material when combined with dispersed graphene oxide (GO), over concerns about fullerene’s limited performance in similar devices. Incorporating GO is expected to augment carrier concentration, increase surface area, and reduce operating voltages. Devices fabricated with p-Si/tetrafullerene with varying GO concentration exhibit notable enhancements in both dark and illuminated characteristics. The results demonstrate improved electron concentration and transport, leading to enhanced rectification ratios, ideality factors, and interface state densities across a broad bias and illumination range. Notably, devices doped with 0.2GO exhibit the most promising electrical and photoresponse characteristics, showcasing potential for applications in photosensing and photovoltaics.

Reduced Persistent Photoconductivity in Successive Ionic Layer Adsorption and Reaction‐Deposited ZnO:Sn Thin Films

Device‐quality Sn‐doped ZnO thin films are obtained from a simple and cost‐effective successive ionic layer adsorption and reaction method with doping concentrations of 1, 3, 5, and 7 mol%. The influence of doping on the structural, morphological, and optoelectronic properties is studied. All the samples show a hexagonal wurtzite structure with planes that reorient themselves upon doping. Morphological studies reveal sharp cone‐like structures branching out to become florets upon doping, resulting in a higher surface‐to‐volume ratio that is reflected in the photoresponse characteristics. The optical properties show a sharp absorbance edge, in the near‐UV region, for all the samples. The calculated bandgap is in the range of 3.19–3.23 eV. Photoluminescence spectra are recorded to analyze the defect states in the samples, and the native defects of ZnO are found. A remarkable increase in current is observed upon illumination indicating significant photoresponse. ZnO tends to show persistent photoconductivity wherein there is delayed decay in the photocurrent. This phenomenon is reduced significantly herein by doping with Sn atoms. The spectral response study confirms that the devices are suitable for visible‐blind, near‐UV detection.

Highly stable, low voltage, flexible photodetector in UV-visible region from self-assembled organic small molecule

The fabrication of a high-performance, low voltage operated flexible organic photodetector (OPD) based on solution self-assembled crystalline thin film of a small molecule, viz, 6,13 bis(tri-isopropylsilylethynyl) pentacene (Tips pentacene) is reported. The OPD demonstrated excellent photodetection ability under range of visible light as well as under UV light, with low illumination intensity. Under 590 nm illumination (5.6 µW/cm2), the device showcased photo to dark current ratio (Iphoto/Idark), ca. 25, photoresponsivity (P) of 89 mA/W, detectivity of 1.81×1010 jones at 1 V bias and response times of 0.04/0.2 sec. Photocurrent modulation of the OPD has been realized by varying the channel width, incident wavelength, applied bias and the illumination intensity. The OPD exhibited excellent photodetection ability under different tensile bending, with roughly 55 % decline in Iphoto/Idark value and 30 % decline in R value under bending radius of 7.5 mm. The OPD could withstand thousands of repeated bending/folding cycles, and regain its initial photoresponse characteristics, if put at rest for 2 hours. The excellent device performances with its precise tuning via various input stimuli suggests that present OPD have great potential for future low cost, low energy and wearable optoelectronics.

(Invited) MoS2 Photodetectors for Near-Infrared Biosensing Applications

Device researchers have been actively developing novel diagnostic biosensors using metallic nanoparticle-based plasmonic immunoassays.[1] In these biosensing devices, photodetectors with high photoresponsivity and low internal noise levels are integrated to detect the marginal optical signals change induced by biomarker binding events (i.e., Antigen-antibody binding). Recently, atomically thin layers of molybdenum disulfide (MoS2) have been integrated with plasmonic components to enable fast and sensitive colorimetric monitoring of disease-related biomarkers.[2] However, such biosensors are mostly operated in the ultraviolet/visible range, which needs a purification step to separate out a variety of unwanted biomaterials that absorb visible light and takes several hours of preparation steps. Thus, it would be amenable to develop biosensors for biomolecular detections or immunoassays in the whole blood (WB) analytes without any sample preparations.[3] To address the issues mentioned above, recent studies have demonstrated the engineered gold nanoparticles (AuNPs) that have localized surface plasmonic resonance (LSPR) shift around near-infrared (NIR) wavelength region. However, a high-sensitivity photodetector under NIR region is still required to detect marginal signal changes due to the target biomarker binding events. Meanwhile, the MoS2 material has been reported to exhibits superior photo-response characteristics.[4] MoS2 is a transition metal dichalcogenide material of which single- and multi-layer films exhibit an efficient electron-hole pair generation rate under photoexcitation and therefore high photo absorption as compared to silicon. Therefore, a systematical study on MoS2 photoconductors to optimize the optoelectronic properties under near-infrared (NIR) (λ = 650 nm) operation can enable zero-preparation WB immunoassays combined with specially engineered AuNPs.In this work, we study the photo-response properties (i.e., Photoresponsivity spectrum) of in-plane MoS2 photodetectors as the function of their geometric dimensions and fabrication conditions. Recent study shows that an annealing temperature after exfoliation can etch the upper layers of MoS2 flakes and clean stains on the device and therefore improve device performances (e.g., mobility). [5] This work enables the NIR operation capabilities of plasmonic colorimetric biosensing by introducing the optimized MoS2 photodetector fabrication practice. This approach reduces assay preparation times and mitigate background interference even with WB analytes and thereby enable the WB point-of-care immunoassays.

Self-Powered FTO/CdSe/Bi2Se3 Photodetector with Bipolar Photoresponse Characteristics.

Self-powered photodetectors with bipolar photoresponse characteristics are expected to play a critical role in the field of secure optical communication, artificial neuromorphic systems, and intelligent color sensors. In this work, asymmetric heterojunction devices exhibiting wavelength-dependent bipolar photoresponse with a structure of Glass/FTO/CdSe/Bi2Se3/Au were fabricated. Under a short wavelength light irradiation, the top CdSe absorber generates a high carrier concentration; the excited carriers are quickly separated by the built-in electric field induced by the FTO/CdSe diode, resulting in a negative photocurrent. For light with wavelengths beyond the CdSe absorption edge, it is absorbed by the bottom Bi2Se3 absorber, and a positive photocurrent can be observed. Therefore, based on the bandgap difference between the top CdSe absorber and the bottom Bi2Se3 absorber, combined with the photogenerated carriers separated by asymmetric back-to-back diode, a wavelength-dependent bipolar response is realized. In this work, by employing this structure, the responsivities of -33.3 and 0.3 mA/W were achieved under the illumination of 405 and 830 nm, respectively. This work provides important indications in the preparation and performance optimization for wavelength-dependent bipolar photodetectors.

Photoresponse dependence of WS2/Pt Schottky junction on the features of Pt nanoparticles

In this study, we delve into the photoresponsive characteristics of Schottky junctions fabricated through the deposition of Pt nanoparticles (NPs) onto multilayer WS2 sheets grown via chemical vapor deposition. Our analysis encompasses a comprehensive examination of the junction's morphology, structural attributes, and photophysical behavior. Of particular interest is the intricate relationship between the efficiency of hot electron injection and the specific properties of the Pt NPs, namely their density and size. Our findings reveal that Pt NPs effectively extinguish the photoluminescence of WS2, an outcome attributed to the efficient separation of photo-generated electron-hole pairs facilitated by the WS2/Pt Schottky junction. This process, however, does not significantly alter the electronic configuration of WS2. The modulation of exciton radiative decay is shown to be contingent upon the size and density of the Pt NPs, with an average size of 1.27 nm and density of 0.82/nm² yielding the most rapid exciton decay rate of 1.15 ns. This pronounced dependence of exciton dynamics on Pt NPs features can be attributed to the quenching effect exerted by densely packed Pt NPs, which also plays a pivotal role in the injection of hot electrons from Pt to WS2. The enhancement of internal photoemission is evidenced by a pronounced increase in near-infrared photoresponse within the 800–1000 nm range. Furthermore, the optimization of Pt NPs features leads to superior photoresponsive performance in the WS2/Pt Schottky junctions, manifesting as a responsivity of 280 A/W and a detectivity of 7.77 × 1012 Jones at a wavelength of 850 nm. This photoresponse's dependence on Pt NPs features underscores the dual mechanism governing photodetection in the WS2/Pt Schottky junction: a synergistic interplay between hot electron injection and the separation of photo-excited electron-hole pairs.

Polarization-sensitive and wide-spectrum photodetector from ultraviolet to near-infrared light based on 2D tellurium at room temperature

Two-dimensional (2D) materials have emerged as promising candidates for photodetection applications, due to their unique structural and optical properties. Herein, we conducted a comprehensive investigation of the 2D Te-based photodetector. The crystal structure, angle-resolved polarized Raman (ARPR) spectroscopy, and theoretical analysis demonstrate the in-plane lattice anisotropy of Te, underlining its suitability for polarization-dependent photodetection. Photocurrent measurements over a broad spectral range (from 365 to 1310 nm) reveal excellent photoresponse characteristics, with responsivity (Rλ) and detectivity (D*) values reaching up to 1189 A/W and 11.51 × 108 Jones, respectively, under 1064 nm illumination. Furthermore, the Te-based photodetector exhibits superior stability, retaining approximately 90 % of its initial performance after six months of ambient exposure. Polarization-sensitive photodetection experiments show significant dichroism ratios (up to 4.6 for 1064 nm illumination), emphasizing the potential of 2D Te for advanced polarization applications. The combination of the broad spectral response, high anisotropy ratio, and long-term stability positions 2D Te as a promising candidate for future photodetection technologies.

Photoconductivity in BxCyNz decorated ZnO 2D/1D system: Conjugation of charge transfer and piezo-phototronic effects

We present the improvisation of photoresponse characteristics of BxCyNz/ZnO system through the amalgamation of the charge transfer process and piezo-phototronic effect. The nanoflakes of BxCyNz obtained through simple chemical route are characterized by N-deficiency related defects in the network. In contrast to bare ZnO, the enhancement of current under light (by 145 %) in BxCyNz decorated system has been correlated to the defect-assisted charge transfer from BxCyNz to ZnO. Further, the interplay of trap-related space charge current due to excess charge transfer under UV illumination is found to exhibit an anomalous dependency of photocurrent with light intensity. The charge transfer process becomes more effective under the application of strain on the BxCyNz/ZnO system and thus exhibits 6 times higher photoresponsivity (∼44 AW−1) compared to the relaxed system. In this context, the negative piezo-potential mediated modification at the interface is held responsible for favouring the transport of transferred charge. Apart from that, the influence of the structural organization of ZnO system on the piezo-phototronic effect-led UV photodetection has also been observed. Eventually, the moderate photoresponse characteristics in g-C3N4/ZnO system in relaxed and strained platforms, ensure the superior role of N-deficiency related electronic states of BxCyNz in elevating the photoresponse property.

Gate‐Modulated and Polarization‐Sensitive Photodetector Based on the MoS2/PdSe2 Out‐Of‐Plane Van Der Waals Heterostructure

AbstractPhotodetectors with good polarization detection ability are promising in many applications, such as remote sensing imaging and environmental monitoring. However, the traditional polarization detection systems fall short in meeting integration demands of the integrated‐circuits field due to additional optical elements. The emerging 2D materials with in‐plane anisotropic structures provide a possible method to fabricate remarkable polarization detectors. Modulating the band structure by gate voltage is an important strategy for developing optoelectronic devices. Herein, a polarized photodetector based on PdSe2/MoS2 out‐of‐plane heterojunction is fabricated. Due to its unique out‐of‐plane heterostructure, the device exhibits excellent photoresponse characteristics and polarization sensitivity, including an excellent responsivity of 10.19A/W, an extremely high external quantum efficiency of 2429%, a fast rise/decay time of 68/192 µs, and a high photocurrent anisotropy ratio of 3.09. Based on the adjustment of the built‐in electric field through gate voltage, the performance of the device can be accordingly modulated. As the gate voltage increases from −30 to 30 V, the responsivity gradually increases from 7.5 to 13A/W and the detectivity increases from 1.53 to 2.63 × 109Jones. Finally, its olarization imaging ability is demonstrated at different polarization angles. The findings indicate that PdSe2/MoS2 devices exhibit significant potential for polarized photoelectric detection.

Highly efficient and 100 % selectivity of CO generation via CO2 Photoreduction over a novel CsBr@CuBr2 Heterojunction

To address the global challenge posed by excessive carbon dioxide emissions, our research pioneers the transformation of CO2 into valuable hydrocarbon fuels. Central to this approach is the innovation of photocatalysts, engineered to exhibit exceptional photoresponse characteristics. In this research, the CsBr@CuBr2 photocatalyst was innovatively synthesized through a straightforward and effective one-pot method. The catalyst displayed remarkable efficacy, achieving a CO2 photoreduction rate of 201.47 μmol g−1 within just 4 h. The incorporation of CsBr into CuBr2 effectively captures excited-state electrons, thereby significantly enhancing charge separation efficiency. Utilizing in situ DRIFTS and DFT theoretical analysis, the experiment reveals the complex process of CO2 photoreduction to CO. The results of this experiment provide breakthrough insights for the systematic design of metal bromide heterostructures, which possess robust CO2 adsorption/activation potential and notable stability.

Superior AlGaN/GaN-Based Phototransistors and Arrays with Reconfigurable Triple-Mode Functionalities Enabled by Voltage-Programmed Two-DimensionalElectron Gas for High-Quality Imaging.

High-quality imaging units are indispensable in modern optoelectronic systems for accurate recognition and processing of optical information. To fulfill massive and complex imaging tasks in the digital age, devices with remarkable photoresponsive characteristics and versatile reconfigurable functions on a single-device platform are in demand but remain challenging to fabricate. Herein, an AlGaN/GaN-based double-heterostructure is reported, incorporated with a unique compositionally graded AlGaN structure to generate a channel of polarization-induced two-dimensional electron gas (2DEGs). Owing to the programmable feature of the 2DEGs by the combined gate and drain voltage inputs, with a particular capability of electron separation, collection and storage under different light illumination, the phototransistor shows reconfigurable multifunctional photoresponsive behaviors with superior characteristics. A self-powered mode with a responsivity over 100AW-1 and a photoconductive mode with a responsivity of ≈108AW-1 are achieved, with the ultimate demonstration of a 10×10 device array for imaging. More intriguingly, the device can be switched to photoelectric synapse mode, emulating synaptic functions to denoise the imaging process while prolonging the image storage ability. The demonstration of three-in-one operational characteristics in a single device offers a new path toward future integrated and multifunctional imaging units.

Mimicking the retinal neuron functions by a photoresponsive single transistor with a double gate

To realize a low-cost neuromorphic visual system, employing an artificial neuron capable of mimicking the retinal neuron functions is essential. A photoresponsive single transistor neuron composed of a vertical silicon nanowire is proposed. Similar to retinal neurons, various photoresponsive characteristics of the single transistor neuron can be modulated by light intensity as well as wavelength and have a high responsivity to green light like the human eye. The device is designed with a cylindrical surrounding double-gate structure, enclosed by an independently controlled outer gate and inner gate. The outer gate has the function of selectively inhibiting neuron activity, which can mimic lateral inhibition of amacrine cells to ganglion cells, and the inner gate can be utilized for the adjustment of the firing threshold voltage, which can be used to mimic the regulation of photoresponsivity by horizontal cells for adaptive visual perception. Furthermore, a myelination function that controls the speed of information transmission is obtained according to the inherent asymmetric source/drain structure of a vertical silicon nanowire. This work can enable photoresponsive neuronal function using only a single transistor, providing a promising hardware implementation for building miniaturized neuromorphic vision systems at low cost.

Photodetectors Based on ZrS3/MoS2 Heterostructures.

High-performance photodetectors with the detection capability of linearly polarized light have broad applications in both military and civilian fields. Quasi-one-dimensional ZrS3 as an emerging anisotropic two-dimensional material has come under the spotlight owing to its intriguing properties. However, the performance of the ZrS3 photodetector is seriously restricted by its low responsivity. Herein, a novel high-performance photodetector based on the van der Waals ZrS3/MoS2 heterostructure is proposed. Attributed to the charge trapping-assisted photogating effect, interlayer carrier transitions, and fast spatial separation of the photogenerated electron-hole pairs, the device displays superior photoresponse characteristics ranging from the ultraviolet to the visible spectrum in terms of high responsivity up to 212 A/W, an extraordinary external quantum efficiency of 8.5 × 104%, and a prompt rise/decay time of 0.19/0.38 ms. In addition, owing to the profound birefringence and dichroism effects in ZrS3 together with strong light-matter interactions in the heterostructure, profound linear-polarization sensitivity is demonstrated with a dichroic ratio of about 2.8. Overall, this photodetector not only is integrated with the excellent properties of ZrS3 and monolayer MoS2 but also further enhances the advantages through interlayer couplings, which demonstrate the strong potential of the ZrS3-based devices for high-performance, ultrafast, and polarization-sensitive photodetection.

Broad band modulation of two-dimensional Mo1-x W x S2 by variational compositions

Precisely tuning bandgap enables tailored design of materials, which is of crucial importance for optoelectronic devices. Towards this end, ternary Mo1-x W x S2 monolayers with continually variational transition metal compositions are synthesized by precisely control of the precursors and growth temperatures in the chemical vapor deposition process, and thus to manipulate the bandgap of the monolayers. Energy dispersive x-ray spectroscopy demonstrates that the composition of the ternary Mo1-x W x S2 monolayers can be effectively modulated by the precursors and synthesizing temperatures. Frequency and intensity of the Raman and photoluminescent peaks of the Mo1-x W x S2 monolayers are continually modulated by the variational Mo and W compositions. The maximum of 0.148 eV bandgap modulation is achieved by modulating the transition metal compositions, which is highly consistent to the calculated 0.158 eV by first-principles theory. Photodetectors based on the Mo1-x W x S2 monolayers are fabricated and U-shape of photoresponse characteristics are demonstrated as x change from 0 to 1 under the same measurement conditions. The estimated photocurrent, photoresponsivity and external quantum efficiency show that the minimum values appear at the composition of x = 0.5, while the maximum values appear at x = 1. The results illustrate an excellent level of control on the band structure of two-dimensional ternary Mo1-x W x S2 by precisely control of the transition metal compositions.

Photocurrent Ambipolar Behavior in Phase Junction of a Ga2O3 Porous Nanostructure for Solar-Blind Light Control Logic Devices.

Photoelectrochemical (PEC) devices are the most similar artificial devices to the nervous system, which is expected to solve the problem of complex computer/nervous system interface (solid-liquid interface) and multifunctional integration (photoelectric fusion) required in the post-Moore era. Based on the different photocurrent ambipolar behavior and different deep ultraviolet solar-blind spectral photoresponse characteristics of α-Ga2O3 and β-Ga2O3, we designed and constructed the Ga2O3 porous nanostructure PEC device with an adjustable photocurrent bipolar behavior through constructing an α/β phase junction core-shell structure by adjusting the thickness and the surface state of the shell layer. The switching point of the α/β-Ga2O3 ambipolar photocurrent shifts toward negative values with the increase of β-Ga2O3 shell layer thicknesses, and adjustable Boolean logic gates are prepared using the voltage as the input source with a high accuracy manipulated by solar-blind deep ultraviolet light. The controllable solar-blind logic gates based on the ambipolar photocurrent behavior of α/β-Ga2O3 presented in this study offer a new path for the photoelectric device multifunctional integration needed in the post-Moore era, which can be used in the creation of Ga2O3 half adders and full adders, as well as in the construction of four-input OR gates.

Intrinsically stretchable phototransistors with polymer-QD-polymer multi-layered hybrid films for visible-NIR perspective electronic skin sensors

Stretchable phototransistors represent a crucial component in the development of skin-inspired optoelectronics. Although there have been significant advancements in the development of skin-like photosensitive semiconductors, technology for stretchable phototransistors that can detect a broad spectrum of wavelengths from near-infrared (NIR) to visible light is still in its early stages. This study introduces an intrinsically stretchable phototransistor employing hybrid semiconductor films consisting of polymer semiconductors (PSC) and quantum dots (QDs). The hybrid multi-layered semiconductor film (PSC/QDs/PSC) possesses wide-ranging color sensitivity from NIR to visible light, along with high photosensitivity and photoresponsivity. Furthermore, our phototransistor exhibits remarkable strain-insensitive, photo-response characteristics, maintaining performance even under 50% strain and enduring 10,000 strain cycles. Notably, the phototransistor array, featuring a distinctive dodecagon shape of source/drain electrodes, effectively responds to NIR and visible light stimuli, even when subjected to substantial areal strains of up to 38%.

Oxide Based Pentachromatic‐Vision Inspired Optoelectronic Synaptic Transistor with Large Conduction States Over 512

AbstractOptoelectronic neuromorphic devices based on oxide semiconductors have been potentially investigated to mimic the functions of human visual synapses. However, the challenge comes from the wide bandgap characteristics of numerous oxide semiconductors, which restricts the response range of the device under ultra‐violet (UV) region. Strategies for widening the response range are mostly focused on artificially generating the defect states, however, most of them results in mimicking the tetrachromatic visual system from UV to visible light range. To be used for industries such as robotics, or autonomous vehicles, mimicking the tetrachromatic vision system should be overcome up to near‐infrared (NIR) region. Here, a facile solution processed indium‐gallium‐zinc‐oxide and silver oxide structured optoelectronic synaptic transistor is fabricated not only to mimic the function of human synapses, but to overcome the tetrachromatic human visual system up to the NIR region. The device not only showed photoresponse characteristics under the entire 405 to 830 nm wavelength region, but also showed significant synaptic behaviors with over 512 conduction states under a reasonable incident light power density of 4.5 mW cm−2. The results will offer a useful facile method for fabricating optoelectronic synaptic transistors that can overcome the tetrachromatic vision systems.

Defect engineering modulated MoSe2 cathode achieves highly effective photo-responsive zinc ion battery

Photo-responsive batteries coupled with solar energy collection, conversion, and storage are promising power sources for the next generation. Dual-function photocathode with high photo-responsive characteristics and energy storage capacity to simultaneously collect and store solar energy is an ideal technological tool. However, low photoelectric conversion efficiency, carrier recombination, and poor electrical conductivity have restricted the development of dual-functional photocathodes. Herein, molybdenum selenide with selenium vacancies (named as MoSe2-VSe) is designed as a photocathode for photo-responsive zinc ion batteries. The specific capacity increased from 186.2 mAh g−1 to 234.7 mAh g−1 under visible light (1 Sun) of 0.1 A g−1. At the current density of 0.1 A g−1, the photoelectric conversion efficiency reaches 0.58 %. Notably, the photo-responsive Zn-ion battery exhibits a photo self-charging voltage of 0.98 V after 6 h illumination. The results show that the photocathode with Se vacancies can promote electron transboundary movement, reduce carrier recombination, and decrease the diffusion barrier of zinc ions. This work presents an encouraging and effective strategy for designing dual-function photocathodes and lays the foundation for the development of photo-responsive batteries.

Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures

In recent years, van der Waals heterojunctions between two-dimensional (2D) materials have garnered significant attention for their unique electronic and optoelectronic properties and have opened avenues for innovative device architectures and applications. Among them, the heterojunction formed by black phosphorus (BP) and molybdenum disulfide (MoS2) stands out as a promising candidate for advanced optoelectronic devices. This study unravels the interplay between BP, MoS2, and Cr contacts to explain the electrical behavior of a BP/MoS2 heterojunction showing rectifying behavior with dominant n-type conduction, and a high ON/OFF current ratio around 104 at ± 20 V. The higher unexpected current observed when applying a negative bias to either MoS2 or BP side is elucidated by an energy band model incorporating a type II heterojunction at the BP/MoS2 interface with Cr forming a Schottky contact with MoS2 and an ohmic contact with BP. The BP/MoS2 heterojunction shows pronounced photoresponse, linearly dependent on the incident laser power, with a responsivity of 100 µA/W under white light at 50 µW incident power. Time-resolved photocurrent measurements reveal a relatively fast response with characteristic rise times less than 200 ms. This work demonstrates that BP/MoS2 van der Waals heterojunctions have unique electrical and photoresponse characteristics that are promising for advanced optoelectronic applications.