Strategies such as reducing charge transfer resistance and enhancing transmission driving force are considered effective in achieving higher photocatalytic performance. In this study, Bi4NbO8Cl@ZnIn2S4−x S-scheme heterojunction photocatalyst with atomic-level interface Bi–S chemical bond connection was successfully constructed through in-situ growth of ZnIn2S4−x nanosheets containing sulfur vacancies (Sv) on Bi4NbO8Cl microplates. Firstly, the S-scheme charge transfer mode effectively spatially separated photogenerated carriers while retaining their reactivity to the maximum extent. Secondly, the interfacial Bi–S bond served as a “bridge” to lessen the interface resistance and provide a high-speed channel for the transmission of photogenerated carriers. Lastly, Sv effectively expanded the Fermi level (Ef) difference between the two semiconductors in the heterojunction, so as to enlarge the built-in electric field (IEF) at the interface and reinforce the driving force for charge transfer. Owing to the synergistic effects of these advantages, the Bi4NbO8Cl@ZnIn2S4−x composite exhibited an average hydrogen production rate of up to 8.7 mmol g−1h−1 under visible light, which was 4.0 and 14.5 times that of ZnIn2S4−x and Bi4NbO8Cl samples, respectively. This work presents a novel approach for designing interfacial chemically bonded S-scheme heterojunction photocatalysts with high catalytic activity.
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