Tin oxide (SnO2) is extensively employed as the electron transport layer (ETL) for perovskite solar cells, but the presence of unsaturated Sn dangling bonds and oxygen vacancy defects at surface hinders effective carrier transport. Herein, we present an effective strategy for constructing a hybrid ETL by doping ZnF2 into the SnO2, effectively addressing the oxygen vacancy defects at both the bulk and interface of SnO2, thus markedly minimizing nonradiative recombination losses. Additionally, the process-induced strong bonding between F and Sn atoms facilitates the establishment of electron transfer pathways, leading to an increased electron cloud density within SnO2 and enhanced electron transfer capability, thus further suppressing charge accumulation at the interface. The hybrid ETL strategy can be adaptable to perovskites with various cations. The MAPbI3 and Cs0.1FA0.9PbI3 perovskite solar cells achieved remarkable PCEs of 21.31% and 24.91%, respectively. Moreover, the hybrid ETL design significantly enhances device stability. After 600 h of ambient storage, the unencapsulated optimized devices retained approximately 90% of their initial efficiency.
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