Out-coupling Efficiency Research Articles

High efficiency grating couplers for strain tunable GaAs quantum dot based entangled photon sources

The on-chip integration of single photon and entangled photon emitters such as epitaxially grown semiconductor quantum dots into photonic frameworks is a rapidly evolving research field. GaAs quantum dots offer high purity and a high degree of entanglement due to, in part, exhibiting very small fine structure splitting along with short radiative lifetimes. Integrating strain-tunable quantum dots into nanostructures enhances the quantum optical fingerprint, i.e., radiative lifetimes and coupling of these sources, and allows for on-chip manipulation and routing of the generated quantum states of light. Efficient out-coupling of photons for off-chip processing and detection requires carefully engineered mesoscopic structures. Here, we present numerical studies of highly efficient grating couplers reaching up to over 90% transmission. A 2D Gaussian mode overlap of 83.39% for enhanced out-coupling of light from within strain-tunable photonic nanostructures for free-space transmission and single-mode fiber coupling is shown. The photon wavelength under consideration is 780 nm, corresponding to the emission from GaAs quantum dots resembling the 87Rb D2 line. The presented numerical study helps implement such sources for applications in complex quantum optical networks.

Polymer Dispersed Liquid Crystal Imprinted by Microlens Array for Enhanced Outcoupling Efficiency of Organic Light Emitting Diode.

In this paper, we demonstrate the use of polymer dispersed liquid crystal (PDLC) imprinted with a microlens array (MLA) via solution process to improve the outcoupling efficiency of organic light emitting diodes (OLEDs). The PDLC, well known for its scattering effect, is an excellent technology for improving the outcoupling efficiency of OLEDs. Additionally, we introduce a simple spin-coating process to fabricate PDLC which is adaptable for future solution-processed OLEDs. The MLA-imprinted PDLC applied OLED shows an enhancement factor of 1.22 in outcoupling efficiency which is a 37.5% increase compared to the existing PDLC techniques without changing the electrical properties of the OLED. Through this approach, we can expect the roll-to-roll based extremely flexible OLED, and with further research on pattering PDLC by various templates, higher outcoupling efficiency is achievable through a simple UV irradiation process.

Improved Light Extraction in Organic Light‐Emitting Diodes via Semiconductor Dilution

AbstractIncreasing the internal light extraction efficiency of organic light‐emitting diodes (OLEDs) is key to improving their performance for solid‐state lighting applications; however, it is challenging to do this in a way that is compatible with high volume manufacturing. Here, it is shown that the outcoupling efficiency of OLEDs can be improved by diluting their hole transport layer (HTL) with the low refractive index material trifluoropropyl oligomeric silsesquioxane (F‐POSS). Specifically, co‐evaporating 40 vol.% F‐POSS in the HTL of single and multi‐stack phosphorescent OLEDs decreases its refractive index by Δn ≈ 0.2, which in turn yields a ≈12% increase in their outcoupling efficiency with no impact on electrical performance or operational lifetime. This result is significant because F‐POSS is a small molecule that sublimes cleanly, does not aggregate, and is compatible with state‐of‐the‐art HTL materials, making it a realistic path to increase light extraction in commercial OLEDs manufactured on existing production lines.

Enhanced Operational Stability by Cavity Control of Single-Layer Organic Light-Emitting Diodes Based on Thermally Activated Delayed Fluorescence.

Highly efficient organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) emitters have been realized in recent years, but the device lifetime needs further improvement for practical display or lighting applications. In this work, we present a device design principle by tuning the optical cavity of single-layer undoped devices, to realize efficient and long-lived TADF OLEDs. Extending the cavity length to the second-order interference maximum by increasing the emissive layer thickness broadens the recombination zone, while the optical outcoupling efficiency remains close to that of the thinner first-order devices. Such a device design leads to efficient and stable single-layer undoped OLEDs with a maximum EQE of 16%, a LT90 of 452h and LT50 of 3693h at an initial luminance of 1000cd m-2 , which is doubled compared to the first-order counterparts. We further demonstrate that the widely-used empirical relation between OLED lifetime and light-intensity originates from triplet-polaron annihilation, resulting in an extrapolated LT50 at 100cd m-2 of close to 90,000h, approaching the demands for practical backlight applications. This article is protected by copyright. All rights reserved.

III–V microdisk lasers coupled to planar waveguides

We report on InGaAs/GaAs quantum dot injection microdisk lasers laterally connected with a bus waveguide fabricated by planar technology from the same epi-structure. Various coupling schemes of microlaser with waveguide are studied including a microlaser attached to a waveguide (zero gap), a 100 nm gap for evanescence light outcoupling, and with a waveguide surrounding the resonator. The modes outcoupling and microlaser's loss (Q-factor) are analyzed by simulation of the lasers. A strong decrease in the number of the microdisk resonance lines associated with an increase in loss in the resonator due to the coupling with waveguide is observed in modeling and experimentally. We study the spectral and lasing parameters of the microdisk lasers, as well as characteristics of the outcoupled emission, and demonstrate efficient light outcoupling for 30 and 40 μm diameter continuous wave operating microdisk laser up to 96 °C.

Dual Control of Enhanced Quasi-Bound States in the Continuum Emission from Resonant c-Si Metasurfaces.

Optical bound states in the continuum (BICs) offer strong interactions with quantum emitters and have been extensively studied for manipulating spontaneous emission, lasing, and polariton Bose-Einstein condensation. However, the out-coupling efficiency of quasi-BIC emission, crucial for practical light-emitting devices, has received less attention. Here, we report an adaptable approach for enhancing quasi-BIC emission from a resonant monocrystalline silicon (c-Si) metasurface through lattice and multipolar engineering. We identify dual-BICs originating from electric quadrupoles (EQ) and out-of-plane magnetic dipoles, with EQ quasi-BICs exhibiting concentrated near-fields near the c-Si nanodisks. The enhanced fractional radiative local density of states of EQ quasi-BICs overlaps spatially with the emitters, promoting efficient out-coupling. Furthermore, coupling the EQ quasi-BICs with Rayleigh anomalies enhances directional emission intensity, and we observe inherent opposite topological charges in the multipolarly controlled dual-BICs. These findings provide valuable insights for developing efficient nanophotonic devices based on quasi-BICs.

Key Determining Factors for the Emitting Dipole Orientation of Exciplexes

AbstractExciplexes have attracted interest as hosts and emitters that provide high efficiency and long lifetimes in organic light‐emitting diodes (OLEDs). However, the emitting dipole orientation (EDO) of exciplexes has been overlooked despite its importance for high efficiency. In this work, the EDO of exciplexes is investigated by changing the p‐type host. Various p‐type hosts are mixed with 2,4,6‐tris[3‐(diphenylphosphinyl)phenyl]‐1,3,5‐triazine for exciplex formation. The EDO of the exciplexes is aligned vertically with p‐type hosts having hydrophobic or electron‐poor central units while dispersing the highest occupied molecular orbitals (HOMOs) at the end of the molecules, whereas it is isotropic with p‐type hosts having widely distributed HOMO on the whole molecular structure without any orientation‐managing central unit. The results show that EDO can be correlated with the outcoupling efficiency of exciplex OLEDs.

Colloidal cesium lead bromide-based anisotropic nanorods for improving outcoupling in perovskite light-emitting diodes

ABSTRACT Photon extraction is one of the major issues limiting outcoupling efficiency in perovskite light-emitting diodes (PeLEDs). Light outcoupling in PeLEDs is typically limited by the disparity in refractive indices among the consisting layers and the difficulty of producing directed emitters in the emitting layers. Here, anisotropic nanorod-based perovskite with colloidal cesium lead bromide was introduced to address the issue via the oil–water interface chemical stripping transition method. It was confirmed that the horizontal transition dipole moments of 73% and refractive index value of 1.86 of the ANRs-based perovskites enhance outcoupling efficiency in PeLEDs. Finally, we achieved green-emitting ANR-PeLEDs with a current efficiency of 45.9 cd/A, power efficiency of 40.0 lm/W, and external quantum efficiency of 18.4% (turn-on voltage 3.3 V), with Commission Internationale de l'Eclairage (CIE) coordinates of (0.073, 0.71). These findings suggest further research into the anisotropic 1D shape of perovskite, which could improve the optoelectrical performance of PeLEDs.

High-efficiency, flexible and large-area red/green/blue all-inorganic metal halide perovskite quantum wires-based light-emitting diodes

Metal halide perovskites have shown great promise as a potential candidate for next-generation solid state lighting and display technologies. However, a generic organic ligand-free and antisolvent-free solution method to fabricate highly efficient full-color perovskite light-emitting diodes has not been realized. Herein, by utilizing porous alumina membranes with ultra-small pore size as templates, we have successfully fabricated crystalline all-inorganic perovskite quantum wire arrays with ultrahigh density and excellent uniformity, using a generic organic ligand-free and anti-solvent-free solution method. The quantum confinement effect, in conjunction with the high light out-coupling efficiency, results in high photoluminescence quantum yield for blue, sky-blue, green and pure-red perovskite quantum wires arrays. Consequently, blue, sky-blue, green and pure-red LED devices with spectrally stable electroluminescence have been successfully fabricated, demonstrating external quantum efficiencies of 12.41%, 16.49%, 26.09% and 9.97%, respectively, after introducing a dual-functional small molecule, which serves as surface passivation and hole transporting layer, and a halide vacancy healing agent.

Engineering the Macrocyclic Donor Structures towards Deep-Blue Thermally Activated Delayed Fluorescence Emitters.

Deep-blue thermally activated delayed fluorescence (TADF) molecules present promising potential in organic light-emitting diodes (OLEDs), especially for display applications. Here, an efficient molecular engineering approach to modifying the donor or acceptor features of the D-π-A-configured TADF molecules for deep-blue emission is reported. By introducing oxygen and sulfone as a bridge unit onto the macrocyclic donor, two emitters, c-ON-MeTRZ and c-NS-MeTRZ, are synthesized and characterized, respectively. The reduced donor strength of c-ON-MeTRZ and c-NS-MeTRZ as compared to that of the model molecule c-NN-MeTRZ leads to blue-shifted emissions with high photoluminescence quantum yields (PLQYs) and retains TADF characters, while the new emitter c-NN-MePym with the most blue-shifted emission only exhibits a pure fluorescent nature because of the electron-accepting feature of pyrimidine that is insufficient for inducing the TADF property. In the presence of macrocyclic donors, these new emitters show high horizontal dipole ratios (Θ// = 85-89%), which are beneficial for improving the light out-coupling efficiency. Deep-blue TADF OLEDs incorporating c-ON-MeTRZ as an emitter doped in the mCPCN host achieves a high maximum external quantum efficiency (EQEmax) of 30.2% together with 1931 Commission Internationale de I'Eclairage (CIE) coordinates of (0.14, 0.13), while the counter device employing c-NS-MeTRZ as a dopant gives EQEmax of 15.4% and CIE coordinates of (0.14, 0.09). The EQEmax of c-ON-MeTRZ- and c-NS-MeTRZ-based devices can be significantly improved to 34.4 and 29.3%, respectively, with a polar host DPEPO, which stabilizes the charge transfer (CT) S1 state to give lower ΔEST for improving the reverse intersystem crossing process. The efficient TADF character, high PLQYs, and high anisotropic emission dipole ratios work together to render the superior electroluminescence (EL) efficiencies. Based on the detailed characterizations of physical properties, theoretical analyses, and comprehensive study on the corresponding devices, a clear structure-property-performance relationship has been successfully established to verify the effective molecular design strategy of modulating the macrocyclic donor characters for efficient deep-blue TADF emitters.

Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm

In this paper, we report, for the first time, a theoretical study on passive photonic devices including optical power splitters/combiners and grating couplers (GCs) operating at non-telecom wavelengths above 2 µm in a monolithic GaSb platform. Passive components were designed to operate, in particular, at around 2.6 µm for monolithic integration with active photonic devices on the III–V gallium antimonide material platform. The three popular types of splitters/combiners such as directional couplers, multimode interferometer-, and Y-branch-couplers were theoretically investigated. Based on our optimized design and rigorous analysis, fabrication-compatible 1 × 2 optical power splitters with less than 0.12 dB excess losses, large spectral bandwidth, and a 50:50 splitting ratio are achieved. For fiber-to-chip coupling, we also report the design of GCs with an outcoupling efficiency of ∼29% at 2.56 μm and a 3 dB bandwidth of 80 nm. The results represent a significant step towards developing a complete functional photonic integrated circuits at mid-wave infrared wavelengths.

Highly Efficient Top‐Emitting Quantum‐Dot Light‐Emitting Diodes with Record‐Breaking External Quantum Efficiency of over 44.5%

AbstractTop‐emitting (TE) quantum‐dot light‐emitting diodes (QLEDs) can exhibit higher light outcoupling efficiency (OCE) compared to bottom‐emitting (BE) QLEDs due to the eliminated substrate mode and enhanced microcavity effect. In this study, TE QLEDs with an OCE of over 45% are realized by simultaneously optimizing the thicknesses of both indium‐zinc‐oxide (IZO) phase tuning layers and IZO top transparent electrodes. To reduce the resistance, the IZO top electrodes are equipped with an auxiliary metal electrode. Consequently, the red QLEDs demonstrate a high external quantum efficiency (EQE) of 38.2%. Furthermore, by applying a scattering layer on the IZO top electrode, the red QLEDs demonstrate record‐breaking efficiencies of EQE 44.5%, power efficiency 92.2 lm W−1, and current efficiency 93.7 cd A−1. The proposed device architecture and optimization strategy contribute to a new design scheme for the preparation of highly efficient QLEDs for displays and lighting applications.

Analyzing exciton distribution in organic light-emitting devices using near-infrared probes

Although organic light-emitting devices (OLEDs) can achieve an internal quantum efficiency (QE) of 100%, their external QE remains limited to less than 40% due to low outcoupling efficiency (OCE). The distribution of excitons is a critical factor in determining OLED OCE, as it affects the coupling to surface plasmon polaritons. Therefore, investigating exciton distribution through experiments is crucial to optimize device structure and enhance OCE. In this study, we propose a probe method to analyze exciton distribution by inserting an ultrathin (∼0.1 nm) near-infrared (NIR) material at a specific position within the emitting layer (EML). With a low excited state energy level, the NIR probe can utilize excitons generated around the specific EML position. By preparing different devices with the NIR probe at various EML positions, we can quantitatively present exciton distribution using the NIR to visible emission ratio. Our results demonstrate that this probe method is effective for investigating exciton distribution in blue, green, and red OLEDs with hole-dominant, electron-dominant, and bipolar transport EMLs, respectively.

Enhancement of light extraction and out-coupling efficiency of thin: film stacked organic light-emitting diode display

Enhancement of light extraction and out-coupling efficiency of thin: film stacked organic light-emitting diode display

Self-Generated Buried Submicrocavities for High-Performance Near-Infrared Perovskite Light-Emitting Diode

HighlightsSynergistic effect triggers the Ostwald ripening for the downward recrystallization of perovskite to form buried submicrocavities as light output coupler.The simulation suggests the buried submicrocavities can improve the light out-coupling efficiency from 26.8% to 36.2% for near-infrared light.Light-emitting diodes yields peak external quantum efficiency increasing from 17.3% at current density of 114 mA cm−2 to 25.5% at current density of 109 mA cm−2 and a radiance increasing from 109 to 487 W sr−1 m−2 with low rolling-off.

Waveguide-Integrated Light-Emitting Metal–Insulator–Graphene Tunnel Junctions

Ultrafast interfacing of electrical and optical signals at the nanoscale is highly desired for on-chip applications including optical interconnects and data processing devices. Here, we report electrically driven nanoscale optical sources based on metal-insulator-graphene tunnel junctions (MIG-TJs), featuring waveguided output with broadband spectral characteristics. Electrically driven inelastic tunneling in a MIG-TJ, realized by integrating a silver nanowire with graphene, provides broadband excitation of plasmonic modes in the junction with propagation lengths of several micrometers (∼10 times larger than that for metal-insulator-metal junctions), which therefore propagate toward the junction edge with low loss and couple to the nanowire waveguide with an efficiency of ∼70% (∼1000 times higher than that for metal-insulator-metal junctions). Alternatively, lateral coupling of the MIG-TJ to a semiconductor nanowire provides a platform for efficient outcoupling of electrically driven plasmonic signals to low-loss photonic waveguides, showing potential for applications at various integration levels.

Tunable femtosecond optical parametric oscillators resonating at 0.65-1.02 µm and 1.07-2.3 µm.

We present a singly resonant femtosecond optical parametric oscillator (OPO) cavity architecture supporting ultra-broadband wavelength tuning and efficient outcoupling of the generated optical pulses. Experimentally, we demonstrate an OPO with its oscillating wavelength tuned over 652-1017 nm and 1075-2289 nm, spanning nearly 1.8 octaves. This is, as far as we know, the widest resonant-wave tuning range obtained from a green-pumped OPO. We show that intracavity dispersion management is crucial for the stationary and single-band operation of such a broadband wavelength tuning system. This architecture is universal, and therefore can be extended to allow the oscillation and ultra-broadband tuning of OPOs at various spectral regions.

Highly-Directional, Highly-Efficient Solution-Processed Light-Emitting Diodes of All-Face-Down Oriented Colloidal Quantum Well Self-Assembly.

Semiconductor colloidal quantum wells (CQWs) provide anisotropic emission behavior originating from their anisotropic optical transition dipole moments (TDMs). Here, solution-processed colloidal quantum well light-emitting diodes (CQW-LEDs) of a single all-face-down oriented self-assembled monolayer (SAM) film of CQWs that collectively enable a supreme level of IP TDMs at 92% in the ensemble emission are shown. This significantly enhances the outcoupling efficiency from 22% (of standard randomly-oriented emitters) to 34% (of face-down oriented emitters) in the LED. As a result, the external quantum efficiency reaches a record high level of 18.1% for the solution-processed type of CQW-LEDs, putting their efficiency performance on par with the hybrid organic-inorganic evaporation-based CQW-LEDs and all other best solution-processed LEDs. This SAM-CQW-LED architecture allows for a high maximum brightness of 19,800cd m-2 with a long operational lifetime of 247h at 100cd m-2 as well as a stable saturated deep-red emission (651nm) with a low turn-on voltage of 1.7eV at a current density of 1mA cm-2 and a high J90 of 99.58mA cm-2 . These findings indicate the effectiveness of oriented self-assembly of CQWs as an electrically-driven emissive layer in improving outcoupling and external quantum efficiencies in the CQW-LEDs.

Research on the High Light Out-Coupling Efficiency Deep-Blue Top-Emitting Organic Light-Emitting Diode through FDTD Optical Simulation.

We have studied high light out-coupling efficiency top-emitting organic light-emitting diodes (TOLEDs) under the guidance of the finite-difference time-domain (FDTD) simulation. TOLED achieves an extraordinarily high light extraction efficiency at 468 nm, in deep-blue regions, of 49.70%, which is approximately 3.5 times that of the bottom light-emitting diode (BOLED) by changing the thickness of the organic layer and the position of the light-emitting layer in the FDTD simulation. Based on the simulation results, the TOLED with ultrahigh efficiency and narrow full width at half maximum is successfully fabricated, and the maximum external quantum efficiency of TOLED is almost 3.3 times that of the BOLED, which is perfectly consistent with the FDTD simulation results. Meanwhile, the shift of the electroluminescence spectrum of the TOLED is restricted within 10° in the angular-dependence test (0° to 80°). The optimized performance of the OLED indicates a new method to develop a high-performance device under the guidance of simulation.

In Situ Determination of the Orientation of the Emissive Dipoles in Light‐Emitting Electrochemical Cells

AbstractThe orientation of the emissive dipoles in thin‐film devices is important since it strongly affects the light outcoupling and thereby the device emission efficiency. The light‐emitting electrochemical cell (LEC) is particularly interesting in this context because its emissive dipoles are located in a high electric‐field p‐n junction, which is formed in situ by redistribution of bulky ions. This implies that the dipole orientation could be distinctly different in the driven LEC compared to the pristine device. This study develops the destructive‐interference microcavity method for the accurate in situ determination of the orientation of the emissive dipoles during LEC operation and apply it on a common LEC device comprising an amorphous conjugated polymer termed Super Yellow as the emitter. It is found that ≈95% of the emissive dipoles are oriented in the horizontal direction with respect to the thin‐film plane in both the pristine LEC and during steady‐state light emission. This finding is attractive since it enables for efficient outcoupling of the generated photons, and interesting because it shows that a horizontal orientation of the emissive dipoles can remain despite the existence of a strong perpendicular electric field and the nearby motion of bulky ions during LEC operation.