Black phosphorus quantum dots (BPQDs) are a very promising zero-dimensional nanomaterial that has attracted considerable interest due to its exceptional characteristics, including high carrier mobility and excellent optical properties with tunable bandgap. BPQDs are ideal for potential applications in optoelectronics and energy storage devices. They are used in solar cells, photodetectors, supercapacitors, and lithium and sodium ion batteries. This paper discusses various BPQD synthesis routes, from scalability to size control, focusing on their potential applications in energy storage devices and optoelectronics. The study primarily focuses on integration of BPQDs with diverse materials, including graphene, carbon nanotubes, polymers, and metal oxides. Addressing issues of stability, scalability and conductivity will pave the way for their wider practical application. Furthermore, this review discusses the future outlook for BPQD composites in developing the next generation of technologies, emphasising their potential to enhance the efficiency, flexibility and sustainability of energy and optoelectronic systems. • BPQDs are an important class of zero dimensional nanomaterials for energy storage and optoelectronic devices. • Scalable synthesis enables precise control of BPQD size and properties. • BPQD based composites increase charge transport, cycling stability and storage capability in energy storage devices. • Engineered BPQDs materials boost efficiency in batteries, supercapacitor and solar cells. • Hybrid BPQD based systems enable high performance, flexible, wearable, and light-responsive devices.

Experimental and computational analyses of SR method grown AZNSH crystals correlated with 50 Gy irradiated and 50 shock-scaled studies for NLO, electronic and photonic applications

Tailoring spin-polarized properties of HfFeX (X = Sn, Ge) half-Heusler alloys for spintronic and optoelectronic applications via DFT

Multifunctional Pb-free double perovskites M <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si140.svg" display="inline" id="d1e2609"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> </mml:math> MoRuO <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si141.svg" display="inline" id="d1e2617"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>6</mml:mn> </mml:mrow> </mml:msub> </mml:math> (M = Ba, Sr) with narrow band gaps for advanced electronic and optoelectronic applications: Insights from first-principles calculations

We present a systematic first-principles study of ANiO 3 perovskites (A = Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba) to elucidate how A-site substitution governs their structural, electronic, and optical properties. Using hybrid density functional theory (PBE 0 and HSE 06 ), we evaluate lattice stability, band structures, density of states, and frequency-dependent optical functions, including absorption, reflectivity, refractive index, extinction coefficient, and energy loss spectra. Results reveal a progression from metallic or semimetallic behavior in LiNiO 3 , RbNiO 3 , and BeNiO 3 to wide-gap insulating states in SrNiO 3 and BaNiO 3 . PBE 0 consistently predicts larger bandgaps and closer agreement with experimental benchmarks compared to HSE 06 . Optical responses strongly correlate with electronic structure: alkali compounds display low-energy absorption and plasmonic peaks, while alkaline earth members show enhanced UV absorption and high dielectric response. These findings highlight A-site chemistry as an effective strategy for tailoring nickelate perovskites for optoelectronic, photonic, and energy-conversion applications. • First-principles DFT study of ANiO 3 perovskites with alkali and alkaline earth cations • Comparative electronic and optical properties analyzed using PBE0 and HSE06 functionals • Bandgap magnitude and character strongly depend on A-site substitution chemistry • Alkali perovskites show low-energy absorption and plasmonic features • Alkaline earth perovskites exhibit enhanced UV absorption and dielectric response

Light attenuation and optical absorption characteristics of graphene-chitosan nanomaterials-based quandary nanocomposites

Developments of ceramic ZnO/MoO3/Bi2O3 reinforced chitosan nano-composite films for flexible optoelectronic and capacitor application

Unveiling the Hall effect and electrical transport properties of chlorophyll-polypyrrole films deposited on ITO substrate for optoelectronic applications

Liquid nitrogen quenching boosts emission and stability of Cs3Cu2I5 perovskite nanocrystals toward multifunctional optoelectronic applications

Nonlinear optical (NLO) processes such as second- and third-harmonic generation (SHG and THG) underpin modern photonics applications. This study demonstrates that microwave (MW) irradiation significantly influences the nonlinear optical (NLO) behavior of Mn-doped NiO thin films, evidenced by SHG and THG measurements and corresponding changes in nonlinear absorption and refraction obtained from Z-scan analysis. Microwave irradiation modifies the defect landscape, dipolar configurations, and charge-carrier dynamics of Mn-doped NiO thin films, leading to a pronounced enhancement in third-harmonic generation (THG) efficiency under different laser excitation regimes. Fluence-dependent THG analysis confirms that MW irradiation enhances photoexcitation and relaxation processes, thereby strengthening the third-order nonlinear optical response. Angle-dependent THG measurements reveal an increase in third-order nonlinear susceptibility from 11.81 × 10 −21 m 2 /V 2 to 13.04 × 10 −21 m 2 /V 2 after MW irradiation, with optimal enhancement observed at 2 min exposure due to improved charge transfer and defect concentration. Z-scan measurements under continuous-wave excitation indicate dominant thermally induced third-order nonlinearities, where all samples exhibit reverse saturable absorption in open-aperture configuration and self-defocusing behavior with a negative nonlinear refractive index in closed-aperture measurements. Notably, the thin film irradiated with MW for 10 min demonstrates the highest nonlinear refractive index and superior optical limiting performance. Overall, MW irradiation emerges as an effective route for tailoring and enhancing the third-order nonlinear susceptibility of Mn-doped NiO thin films. These enhancements, governed by MW-induced modifications in dipole moments and relaxation pathways, highlight the potential of MW-irradiated Mn-doped NiO thin films for next-generation nanophotonic and ultrafast laser applications.

The development of smart materials that can react to external stimuli and provide controlled and frequently reversible responses is facilitated by the coupling of physical effects. In this work, a photo-pyroelectric effect based on a piezoelectric polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) polymer composite with fullerene C 60 incorporated at different concentrations (1, 3, 5, 10 and 20% wt.) has been developed with the aim of obtaining a multi responsive material: together with the piezoelectric and pyroelectric characteristics of the polymer, the inclusion of the fillers allow a photo-pyroelectric response, suitable for optoelectronic applications. The addition of fullerene – C 60 leads to a mechanical plasticizing effect in the polymer matrix, revealed by the decrease of the Young’s Modulus from 335 MPa to 157 MPa and an increase in the dielectric constant from approximately 10 to 20 at 100 Hz, for P(VDF-TrFE) samples with 20% wt. of fullerene – C 60 . A pyroelectric coefficient of 20 μC/m 2 ·K was achieved with a 10% wt. fullerene – C 60 loading, while maintaining a piezoelectric response of 15 pC/N. Further, under laser irradiation and due to the photo-pyroelectric response, the composite with 10% wt. fullerene – C 60 content reaches a generated voltage of 400 mV across a temperature variation of 1.4 °C, proving the multifunctionality of the materials and their applicability in applications including infrared detectors, thermometers, or energy harvesting, among others. A new photo-pyroelectric effect in a piezoelectric composite composed of Fullerene-C60 and the ferroelectric polymer P (VDF-TrFE) is presented. The material allows to directly produce an electric signal from light absorption through to this phenomenon, which offers a novel mechanism for optoelectronic energy conversion. Further, the material maintains its piezoelectric response, allowing for multifunctional mechano-electric, pyro-electric and photo-pyroelectric response. The photo-pyroelectric effect is enabled and improved by the polymer and fullerene's synergistic interaction, which is a crucial step in the development of high sensitive flexible photonic devices. • Photo-pyroelectric effect was demonstrated in piezoelectric and pyroelectric polymer composites of P(VDF-TrFE) with fullerene. • The influence of fullerene content on P(VDF-TrFE) was evaluated. • The mechanical, dielectric and piezoelectric properties are affected by the fullerene content. • A maximum pyroelectric coefficient of 20 μC/m 2 ·K was achieved with a 10% wt. fullerene – C60. • These composites are suitable for advanced applications with a generated voltage of 400 mV across a temperature variation of 1.4 °C.

Physical, optical and electrical studies of P2O5-TeO2-ZnO-V2O5-Fe2O3 glasses

Investigating the photoluminescence, structural, optical and thermal properties of CaO-doped vanadate glasses for optoelectronics applications

High-quality fs-laser structured Si in air for optoelectronic applications

A DFT Study and AIMD calculation of the Physical, Photocatalytic, and Optoelectronics characteristics of Rb3ZnX3 (X=F, Cl, Br, and I) Perovskites for optoelectronics applications

Effect of sputtering working pressure on InZnO and InZnMgO thin films and their application to solar cells

Surface-enhanced Raman spectroscopy (SERS) enables the detection of molecular signatures at extremely low concentrations, even down to a single molecule, by using plasmonic nanostructures that support localized surface plasmon resonances (LSPRs). Nonetheless, fabricating highly sensitive nanostructures typically requires complex, time-consuming, and costly fabrication processes with limited scalability. In this work, we present a simple and universally applicable single-step method to fabricate plasmonic nanocrystals (NCs) from metals, such as Al, Ag, and Au. These NCs are directly grown over large surface areas on various substrates through heat-assisted growth from e-beam or magnetron sputter depositions. The LSPRs of the NCs can be tailored by selecting the metal, nanocrystal size, and surface morphology. The heat-assisted growth strategy enables the formation of NC matrices capable of detecting analyte molecules at ultralow, down to zeptomolar, concentrations via SERS, particularly when using Ag NCs. This versatile, cost-effective fabrication approach opens new opportunities for large-area plasmonic platforms in sensing, photocatalysis, and optoelectronic applications.

Two-dimensional perovskites have emerged as promising materials for optoelectronic applications owing to their excellent environmental stability and tunable quantum confinement. Such 2D perovskites can incorporate a particularly versatile range of organic cations of different size, chemical nature, and optoelectronic character. However, understanding and controlling thin-film transport for this vast family of materials remains a key challenge to their successful application in devices. Here, we systematically investigate odd-even effects in thin films of Ruddlesden-Popper-type (RP) lead-iodide 2D perovskites based on nonconjugated alkylammonium spacer cations with chain lengths ranging from three to eight carbon atoms. A pronounced odd-even dependence on the carbon number is observed in both optical and transport properties, including absorption coefficients, photoluminescence energies and lifetimes, and excitation diffusion dynamics. Notably, the coefficients for charge-carrier diffusion out of the film plane─extracted via a dynamic photon reabsorption approach─display an opposite odd-even trend to the in-plane charge-carrier mobility obtained from optical pump-terahertz probe measurements, causing a pronounced odd-even modulation of the thin-film mobility anisotropy. Grazing-incidence wide-angle X-ray scattering measurements reveal that this behavior is related to cation-controlled nanostructural orientation: even-numbered alkyl spacer cations induce lead-iodide planes lying highly oriented within the film plane, while odd-numbered ones cause more disordered stacking. Furthermore, the observed 1/d2-dependence on interplane distance d in ordered films demonstrates that Förster resonance energy transfer underpins diffusion of excitations between lead-iodide layers. Our findings establish a direct structure-transport correlation in 2D perovskite films and provide valuable guidelines for the design of optoelectronic devices.

Germanium nanocrystals (Ge NCs) exhibit size-dependent optical properties, making them promising for optoelectronic and near-infrared (NIR) applications. However, their performance is often limited by surface oxidation and dangling bonds. A microwave-assisted ligand-exchange method is presented that replaces a significant portion of surface-bound oleylamine (OAm) with sulfur dissolved in octylamine (OA) and toluene, facilitating efficient surface passivation without additional etching steps. SEM-EDS mapping, FTIR, 1H NMR, and XPS analyses confirm sulfur passivation and partial displacement of OAm ligands. High-resolution XPS spectra show a characteristic S 2p doublet, indicative of Ge-S bond formation. Elemental mapping shows spatial colocalization of Ge and S, and TEM, HRTEM, and SAED analyses confirm that the NCs' crystalline structure remains intact after surface modification. This scalable approach provides an effective strategy for enhanced surface control of Ge NCs in optoelectronic applications.

This study investigates the structural, electronic, elastic, optical, and thermoelectric properties of double perovskite oxides A2GaBiO6 (A = Sr, Ba). It uses Density Functional Theory (DFT) combined with BoltzTrap2 within the Full-Potential Linearized Augmented Plane Wave (FP-LAPW) method. Exchange-correlation potential is described by using the well-organized Modified Becke-Johnson (mBJ) with the combination of Spin-Orbit Coupling (SOC). The structural and thermodynamic stabilities of these compounds are validated through energy-volume analysis and favorable formation and cohesive energy values. The calculated value of elastic constants i.e., C11 = 194.64/192.46 GPa, C12 = 24.13/22.02 GPa, C44=70.98/28.72 GPa for (Sr/Ba)2​GaBiO6​, respectively​. These values confirm mechanical stability and reveal anisotropic mechanical behavior throughout the series. Analysis of the electronic band structure shows direct band gaps at the Γ-point. These band gaps can be tuned by substitution at the A-site, indicating potential applications in semiconducting and optoelectronic devices. The studied compounds showing semiconductor nature with a bandgap of 1.149eV and 1.148eV for Sr2GaBiO6 and 0.517eV and 0.515eV for Ba2GaBiO6 with mBJ and mBJ + SOC potentials, respectively. Their optical response characterized by absorption spectra, refractive indices, and reflectivity suggests strong activity in the UV-visible range. Sr2​GaBiO6​ exhibits Seebeck coefficients of 235.92 µV/K (300K) and 211.01 µV/K (1200K) with maximum ZT = 0.49 (1200K), while Ba2​GaBiO6​ shows Seebeck coefficients of 412.14 and 250.60 µV/K at 300 and 1200K, respectively with ZT = 0.643 (1200K). The lattice thermal conductivity decreases with increasing temperature for each compound. For example, in Sr2GaBiO6, κl reduces from 0.225W/mK at 300K to 0.033W/mK at 1200K, indicating enhanced phonon scattering at higher temperatures. This performance is attributed to reduced lattice thermal conductivity and strong transport properties as predicted by BoltzTrap2. Overall, A2GaBiO6 perovskites show promising potential for thermoelectric and photovoltaic applications, as indicated by the calculated electronic and optical properties. Further experimental validation is required to confirm their suitability for practical energy and optoelectronic applications.