Optimal Doping Concentration Research Articles

Oxyfluoride K3MoO2F5·2H2O:Mn4+ red phosphor with enhanced luminescence and moisture resistance for WLED indoor lighting and wide gamut display applications

K3MoO2F5·2H2O:Mn4+ (KMOFM) oxyfluoride red phosphor was synthesized by co-precipitation strategy. Due to the non-equivalent doping of Mn4+, the phosphor has a strong ZPL emission peak at 623 nm with high color purity (97%). The crystal field strength and nephelauxetic effect were systematically discussed. By optimizing the synthesis process, the optimal doping concentration of Mn4+ was determined to be 0.02. The surface modification of organic reagents (paraffin wax (PW), oleic acid (OA) and methyl silicone oil (MSO)) can effectively enhance the luminescence intensity and moisture resistance of the phosphors, and the possible surface modification mechanism was also proposed. Meanwhile, the as-synthesized sample exhibits distinguished UV light-induced stability, and the surface modification can also improve the photoinduced stability. Moreover, the luminescence thermal stability and the thermal quenching mechanism were analyzed in detail. Furthermore, the CCT and CRI of the warm WLED devices prepared by the red KMOFM/surface-modified phosphors and yellow Y3Al5O12:Ce3+ phosphor are improved obviously, indicating that the prepared sample is a promising red phosphor applied to WLED lighting field. Noticeably, based on the characteristics of high PLQY (63.09%), high color purity (97%) and short fluorescence lifetime (< 4 ms) of the phosphor, we also fabricated a WLED device with wide color gamut (105.1% NTSC value), indicating that the phosphor can also be well applied to the field of wide color gamut fast response backlight display, which greatly expands the application value of the phosphor.

Enhanced Fluorescence Characteristics of SrAl2O4: Eu2+, Dy3+ Phosphor by Co-Doping Gd3+ and Anti-Counterfeiting Application.

A series of long-afterglow luminescent materials (SrAl2O4: Eu2+ (SAOE), SrAl2O4: Eu2+, Dy3+ (SAOED) and SrAl2O4: Eu2+, Dy3+, Gd3+ (SAOEDG)) was synthesized via the combustion method. Temperature and concentration control experiments were conducted on these materials to determine the optimal reaction temperature and ion doping concentration for each sample. The crystal structure and luminescent properties were analyzed via X-ray diffraction (XRD), photoluminescence (PL), and afterglow attenuation curves. The outcomes demonstrate that the kind of crystal structure and the location of the emission peak were unaffected by the addition of ions. The addition of Eu2+ to the matrix's lattice caused a broad green emission with a central wavelength of 508 nm, which was attributed to the characteristic 4f65d1 to 4f7 electronic dipole, which allowed the transition of Eu2+ ions. While acting as sensitizers, Dy3+ and Gd3+ could produce holes to create a trap energy level, which served as an electron trap center to catch some of the electrons produced by the excitation of Eu2+ but did not itself emit light. After excitation ceased, this allowed them to gently transition to the ground state to produce long-afterglow luminescence. It was observed that with the addition of sensitizer ions, the luminous intensity of the sample increased, and the afterglow duration lengthened. The elemental structure and valence states of the doped ions were determined with an X-ray photoelectron spectrometer (XPS). Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) were used to characterize the samples. The results show that the sample was synthesized successfully, and the type and content of ions in the fluorescent powder could be determined. The fluorescence lifetime, quantum yield, bandgap value, afterglow decay time, and coordinate position in the coherent infrared energy (CIE) diagram of the three best sample groups were then analyzed and compared. Combining the prepared phosphor with ink provides a new idea and method for the field of anti-counterfeiting through screen printing.

Fabrication of efficient and stable wide band gap CsPbIBr2 inorganic perovskite solar cells via doping with lead chloride compound

Currently, CsPbX3 (X = I, Br, Cl) wide bandgap inorganic perovskite solar cells (PSCs) with superior thermal stability and excellent photoelectric performance have received great attention in the photovoltaic community, showing great potential for the applications of tandem devices and building integrated photovoltaics (BIPV). Among them, CsPbIBr2 is considered as the most promising light-absorbing layers to balance performance and stability. However, its power conversion efficiency (PCE) is still lagging far behind other inorganic perovskites. It mainly attributes to the effect of sever intrinsic self-doping defect which always results in small grain size, low film coverage, and large carrier recombination. Herein, Lead Chloride (PbCl2) compound is firstly incorporated into CsPbIBr2 precursor solution to prepare CsPbIBr2−xClx wide bandgap films, and its optimal doping concentration is systematic studied in this work. Surprisingly, after the doping of PbCl2, the number of pinholes in perovskite films significantly decreased and impressive micron sized grains appeared. Besides, the improvement of crystal quality and the reduction of defect density effectively reduce the recombination of charge carriers inside the device. Hence, the optimized CsPbIBr2−xClx with a wide bandgap of 2.09 eV gains a PCE of 9.38 % and shows good thermal stability.

Phosphors Ba2 LaTaO6 :Mn4+ and its alkali metal charge compensation for plant growth illumination.

A series of Mn4+ -doped and Mn4+ ,K+ -co-doped Ba2 LaTaO6 (BLT) double-perovskite phosphors was synthesized using a high-temperature solid-state reaction. The phase purity and luminescence properties were also studied. The optimum doping concentration of Mn4+ and K+ was obtained by investigating the photoluminescence excitation spectra and photoluminescence emission spectra. The comparison of BLT:Mn4+ phosphors with and without K+ ions shows that the photoluminescence intensity of K+ -doped phosphors was greatly enhanced. This is because there was a charge difference when Mn4+ ions were doped with Ta5+ ions in BLT. Mn4+ -K+ ion pairs were formed after doping K+ ions, which hinders the nonradiative energy transfer between Mn4+ ions. Therefore, the luminescence intensity, quantum yield, and thermal stability of phosphors were enhanced. The electroluminescence spectra of BLT:Mn4+ and BLT:Mn4+ ,K+ were measured. The spectra showed that the light emitted from the phosphors corresponded well with chlorophyll a and phytochrome PR . The results show that the BLT:Mn4+ ,K+ phosphors had good luminescence properties and application prospects and are ideal materials for plant-illuminated red phosphors.

Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode

We conduct a comprehensive study to investigate the feasibility of achieving high internal quantum efficiency (IQE) and wavelength stability in an InGaN/GaN blue light-emitting diode (LED) through numerical simulations with different doping concentrations. To ensure accurate calculations, we emulated the structure of an LED, fabricated on freestanding GaN with low defect density, abrupt interfaces, and high-performing characteristics, which resemble ideal conditions. Our objective is to determine the optimal doping concentration of the claddings using the Quantum Drift-Diffusion (QDD) model. We tested three concentrations ( ), and found that produced the highest IQE of 82.5%, the most stable wavelength in the range of (0.08–63.25) mA, an optical power of mWs−1, and a forward voltage of V at 20 mA. We suggest that using this concentration leads to the parameters closest to those of the reference device.

Energy-transfer phenomenon and color-tunable properties of Ca2Al2SiO7: Dy3+/Eu3+ phosphors

Ca2Al2SiO7 (CAS) doped with Eu3+ and Dy3+ was successfully synthesised with the solid-phase reaction method, in which the sample was sintered at 1,280 °C for one hour. The energy-transfer phenomenon from Dy3+ to Eu3+ was observed in the CAS matrix. The optimal doping concentration of Dy3+ and Eu3+ is 1.5 and 1% mol. In addition, the energy-transfer mechanism, CIE colour coordinate, and CCT colour temperature of CAS/Dy3+/Eu3+ were also presented and discussed.

Customizing dual-functional platforms for solid-state lighting and luminescence lifetime thermometry with high sensing sensitivity

By substituting Mn4+ for Te6+ in the [TeO6] octahedron, Mn4+doped SrScLiTeO6 (SSLT) phosphors exhibited a broad excitation band ranging from 200 to 600 nm. Emission spectra of the SSLT: Mn4+ phosphors were recorded under 355 nm excitation, centered at 695 nm on account of the 2Eg→4A2g spin-forbidden transition. The optimum doping concentration was suggested to be 0.1 mol%, and the electric dipole-dipole was the basic interaction for the concentration quenching in this work. The chromaticity coordinates of the optimal 0.1 mol% sample were (0.725, 0.275) and it possessed a high color purity of 94.5%. Besides, the obtained sample exhibited beneficial thermal stability based on peak integral intensity, which is suitable to fabricate light-emitting diode devices for plant lighting (red light) and indoor illumination (white light). Eventually, the sensing sensitivity based on lifetime was also studied ranging from 23 to 498 K and the optimum relative sensing sensitivity (SR) was 7.86% K−1 at 473 K. Thus, Mn4+-doped SSLT: Mn4+ phosphors should be potentially used in solid-state lighting and wide-range optical thermometers.

Efficient lifetime-based optical thermometry using BaLaZnSbO6:Mn4+ red-emitting phosphors

In this study, a series of Mn-doped BaLaZnSbO6 (BLZSO:Mn4+) phosphors were synthesized by solid-state reaction method. Under 355 nm excitation, the BLZSO:Mn4+ phosphors exhibited a red emission with the peak centered at 697 nm, which was attributed to the 2Eg → 4A2g characteristic transition of Mn4+ ions. The optimal doping concentration of Mn4+ was found to be 0.6% and the concentration quenching mechanism was attributed to dipole-dipole interaction. Moreover, the structural information, crystal field strength, color purity and thermal stability were studied in detail. Additionally, the temperature-dependent lifetime of Mn4+ ions was monitored in the temperature range of 13–473 K and the maximum Sr value was obtained to be as high as 1.87 K-1. This work reveals that the BLZSO:Mn4+ phosphors have potential in the field of optical thermometer.

Thermoelectric transport in zinc antimonide ZnSb

Transport equations for phonons and electrons are solved to understand the thermoelectric transport in ZnSb. Inherent poor bonding characteristics are reflected in the low frequencies and low group velocities of phonons estimated within the harmonic approximation. Low-frequency optical branches overlap with the acoustic branches, increasing the scattering phase space. Estimated mode Grüneisen parameters indicate an anharmonic system, which is also reflected in the low self-consistent phonon lifetimes. All these factors contribute to the low thermal conductivity of ZnSb. The optimum doping concentration for the thermoelectric figure of merit is approximately 5 × 1018 per cm3. There is an asymmetry in the distribution of the density of states near the band edges, which also contributes to the hole-dominated thermoelectric transport in the intrinsic region.

Preparation, optical, and thermal stability of Tb3+‐doped glass ceramics containing Al4Ti2SiO12

AbstractThe Tb3+‐doped transparent glass ceramics containing Al4Ti2SiO12 crystal are synthesized by the melt‐solid‐crystallization method. The optimal heat treatment conditions for the glass ceramic samples are determined to be 750°C, 1.5 h based on differential scanning calorimeter, X‐ray diffractometer, scanning electron microscope, and light transmittance curve. The luminescence properties of the glass ceramics samples are characterized by a fluorescence spectrometer. The emission spectrum revealed that the dominant emission is green attributed to Tb3+, the optimal doping concentration is 0.3%. And the thermal quenching activation energy of 0.3% Tb3+‐doped glass ceramics is 0.2554 eV, while the relative sensitivity is 1.50% K−1 at 298 K and the absolute sensitivity is 2.27×10−2 K−1 at 418 K through variable temperature fluorescence spectroscopy test and a series of calculations. These findings demonstrate the excellent stability and temperature sensitivity of glass ceramics, thereby highlighting their potential for use in green lighting and temperature sensing applications.

Role of TiO2 addition on recycling of TV screen waste glasses: Experimental and theoretical studies on structure and radiation attenuation properties

Using the powder metallurgy, TiO2-doped TV screen glass ceramic samples were prepared with TiO2 concentrations of 0 (S-TV), 10 (S-TV/Ti10), and 20 (S-TV/Ti20) wt%. The TV screen glass was collected from a damaged TV's CRT. The fabricated materials were investigated for their physical, structural, and radiation-shielding attributes. The chemical composition of the prepared glasses was analysed with the aid of the X-ray fluorescence (XRF) method. The crystalline phase and microstructure of the glass ceramics were studied through the X-ray diffraction (XRD) method and scanning electron microscope (SEM), respectively. The density and Vickers hardness of the sample were determined by the Archimedes method and a micro hardness tester, respectively. The absorption parameters of electrons, protons, alpha particles, carbon ions, fast neutrons, and thermal neutron were calculated from various software and analytic expressions. The XRD spectra of the samples showed the presence of distinct crystalline peaks associated with TiO2, SiO2, and Ba2SiO4. The SEM images revealed that crystalline structures nucleated and increased with coarser crystalline grains when the amount of TiO2 was increased. The densities of the glass ceramics were 2.525, 2.546, and 2.285 g/cm3 for the S-TV, S-TV/Ti10, and S-TV/Ti20 samples, respectively while the corresponding Vickers hardness values were 495, 540, and 578 HV. The projected range of electrons, protons, alpha particles, and heavy carbon ions were within the limits 2.78–32182.18 μm, 0.215–1400 μm, 0.154–130.54 μm, and 0.053–14.10 μm in S-TV, 2.76–31991.36 μm, 0.205–1320 μm, 0.147–122.05 μm, and 0.049–13.11 μm in S-TV/Ti10, and 2.84–32824.95 μm, 0.212–1360 μm, 0.151–125.55 μm, and 0.051–13.45 μm in S-TV/Ti20, respectively. Among the three samples, S-TV was the best thermal neutron absorber, while S-TV/Ti10 is most effective in slowing down fast neutrons. The optimum TiO2 doping content for enhancing the charged particle and fast neutron moderating abilities of TV screens is 10 wt%.

Mn4+-Activated Double-Perovskite-Type Sr2LuNbO6 Multifunctional Phosphor for Optical Probing and Lighting.

Multifunctional phosphors have significant application and scientific value and are becoming a research hotspot in the field of luminescent materials. Herein, we report Mn4+-activated double-perovskite-type Sr2LuNbO6 multifunctional phosphors with excellent comprehensive properties in the fields of optical temperature/pressure sensing and w-LED lighting. The crystalline structure, elemental composition, optimal doping concentration, crystal-field strength, and optical bandgap of the phosphors are investigated in detail, and the mechanisms of concentration and thermal quenching are discussed. From the optimal Sr2LuNb0.998O6:0.2%Mn4+ phosphor, a LED lamp for indoor warm-white lighting is successfully fabricated. Further, the thermometric properties of the phosphors are explored for applications as FIR- and lifetime-based thermometers, showing a maximum relative sensitivity of 1.55% K-1 at 519 K. Upon pressure loading, a significant red-shift of the peak centroid is observed, and the pressure sensitivity is determined to be 0.82 nm/GPa. These results suggest that the Mn4+-activated Sr2LuNbO6 multifunctional phosphors have great potential to be utilized in the fields of optical thermometry, manometry, and lighting.

Ballistic transport in 5.1 nm monolayer boron phosphide transistors for high-performance applications

Boron Phosphide is reported to be a semiconductor material with anisotropy, tunable bandgap, and high carrier mobility. We study the performance of 5.1 nm metal–oxide–semiconductor field-effect transistors (MOSFETs) based on boron phosphide using quantum transport simulation. The calculated results show that the on-state current can fulfill the requirements of the International Semiconductor Technology Roadmap (ITRS) for high-performance (HP) devices at the optimal doping concentration, but the gate control capability is not ideal. Furthermore, it is found that the gate control capability and on-state current can be significantly improved with the length being 1 nm by using the underlap (UL) structure. We also study the performance of boron phosphide MOSFET with different gate lengths (5–8 nm), and the results suggest that the shorter the gate length, the worse the gate control capability. Interestingly, the p-type boron phosphide MOSFET always outperforms the n-type MOSFET. This work will provide a new reference for the development of two-dimensional (2D) semiconductor devices.

A novel orange-red Ba3MgTa2O9:Eu3+ phosphor synthesis and luminescence properties in WLEDs

A new orange-red phosphor Ba3MgTa2O9:xEu3+ (0.05 ≤ x ≤ 0.60) was successfully prepared through the high-temperature solid-state reaction. A study of its structure, morphology, photoluminescence and fluorescence lifetime was conducted. By exposing the phosphor to near-ultraviolet (n-UV) light, orange-red light is generated as a result of the 7F0→5D1 magnetic dipole transition. The emission intensity is maximal at a doping concentration of x = 0.4, and concentration quenching occurs at higher concentrations. At 423 K, Ba3MgTa2O9:0.4Eu3+ phosphor luminescence intensity remained at 71% in reference to that at 303 K, showing good thermal stability. The CIE coordinates of the phosphor with the optimal doping concentration at room temperature are located at (0.6008, 0.3942) with a color purity of 98.27%. A high color rendering index is achieved by the prepared WLEDs, with Ra = 93.8 and CCT = 5671 K, which are located in the white light region of CIE with the coordinates of (0.3286, 0.3487). It is shown that the prepared Ba3MgTa2O9:Eu3+ phosphor is a potential orange-red phosphor material for WLEDs.

Near-UV-excitable broadband green-emitting Ca2LaHf2GaAl2O12:Ce3+ garnet-type phosphors for high color rendering warm-white LEDs

Efficient broadband green-emitting phosphors are promising for application in high color rendering white light-emitting diodes (LEDs). In this paper, we report on the preparation, crystal structure and photoluminescence properties of a novel green-emitting Ca2LaHf2GaAl2O12:Ce3+ (CLaHGA) garnet-type phosphor. All these CLaHGA:xCe3+ (x = 4, 6, 8, 10, and 12 mol%) phosphors have been synthesized through using the conventional high-temperature solid-state reaction method. It has been found that the optical property of phosphors critically depends on Ce3+ content, and the optimal doping concentration of Ce3+ ions is 6 mol%. The optimal CLaHGA:6%Ce3+ sample has a cubic structure with the space group Ia3‾d and lattice parameters of a = b = c = 12.62662 Å and V = 2013.08 Å3. The CLaHGA:xCe3+ phosphors exhibit an intense absorption band in the 300–485 nm range with a peak at 421 nm, due to the spin-allowed and parity-allowed 4f→5d transition of Ce3+ ions. Upon 421 nm excitation, CLaHGA:xCe3+ phosphors give rise to bright broad green emission bands in the 435–750 wavelength region with peak ranging from 519 to 531 nm, owing to the spin-allowed and parity-allowed 5d→4f transition of Ce3+ ions. For the optimal CLaHGA:6%Ce3+ sample, its CIE color coordinates and internal quantum efficiency are determined to be (0.3135, 0.4851) and 40.7%, respectively. The full width at half maximum of CLaHGA:6%Ce3+ is much larger than the commercial (Ba,Sr)2SiO4:Eu2+ green phosphor (124 nm versus 71 nm), while its emission intensity is only about 39% of that of (Ba,Sr)2SiO4:Eu2+. Besides, the thermal stability of CLaHGA:6%Ce3+ has also been studied. A white LED device is fabricated using the synthesized CLaHGA:6%Ce3+ green phosphors, showing a bright warm-white light emission with high color rendering index of Ra = 89.7 and low correlated color temperature of 4058 K.

A Revisit of Superconductivity in 4Hb-TaS2−2xSe2x Single Crystals

Previous investigations of 4$H_b$-TaS$_{2-2x}$Se$_{2x}$ mainly focused on the direct competition between superconductivity and charge density wave (CDW). However, the superconductivity itself, although has been prominently enhanced by isovalent Se substitution, has not been adequately investigated. Here, we performed a detailed electrical transport measurement down to 0.1 K on a series of 4$H_b$-TaS$_{2-2x}$Se$_{2x}$ single crystals. A systematic fitting of the temperature-dependent resistance demonstrates that the decreased Debye temperatures ($\Theta_{D}$) and higher electron-phonon coupling constants ($\lambda_{e-p}$) at the optimal Se doping content raise the superconducting transition temperature ($T_c$). Additionally, we discovered that the incorporation of Se diminishes the degree of anisotropy of the superconductivity in the highly layered structure. More prominently, a comprehensive analysis of the vortex liquid phase region reveals that the optimally doped sample deviates from the canonical 2D Tinkham prediction but favors a linear trend with the variation of the external magnetic field. These findings emphasize the importance of interlayer interaction in this segregated superconducting-Mott-insulating system.

Optical temperature-sensing properties with various strategies for Y18W4O39 phosphors by near-infrared excitation

The Er3+-Yb3+ and Tm3+-Yb3+ rare earth (RE) ions co-doped Y18W4O39 (YWO) phosphors were prepared by the solid-state reaction method. Their phase purity, upconversion (UC) luminescence and optical temperature sensing behaviors were investigated in detail. The single-phase samples are obtained when the RE ions are incorporated into the YWO host lattice. The characteristic transition peaks of Er3+ and Tm3+ appear under irradiation with the 980 nm laser light source and their optimal doping concentrations are determined. The fluorescence intensity ratio (FIR) strategy is utilized to assess the optical temperature-sensing properties, including the thermally coupled energy levels (TCELs) and non-TCELs. It is found that the FIRs of Er3+ (I524/I546 and I659/I524) and Tm3+ (I477/I484 and I791/I652) change obviously as the temperature varies. The temperature-induced changes for FIRs are also checked, which indicates an excellent reproducibility and repeatability. A series of sensitivity curves are presented as a function of absolute temperature, and the maximum sensitivity values are obtained. Furthermore, the decay curves are studied to better understand the UC energy transfer process. The above results reveal that the developed phosphors are promising to be a candidate for optical temperature sensor.

A novel red-emitting K5La(MoO4)4:Eu3+ phosphor with a high quantum efficiency for w-LEDs and visualization of latent fingerprints

A new series of red luminescent K5La(MoO4)4:xEu3+ (KLMO:xEu3+) phosphors (x = 0.05–1.00 mol) was successfully synthesized by a high-temperature solid phase reaction at a low reaction temperature (600 ℃). The X-ray diffraction (XRD) pattern, photoluminescence properties, thermal quenching mechanism, quantum efficiency, and lifetime decay curves of the phosphors were measured and discussed in detail. The prepared phosphors exhibited strong red-light emission (at 615 nm) upon excitation at 394 nm, attributed to the electric dipole 5D0-7F2 transition of Eu3+. The optimal doping concentration of phosphors is 0.8 mol. The quenching temperature of the KLMO:0.80Eu3+ phosphor was found to exceed 480 K, with high activation energy (Ea) of 0.43 eV, showing good thermal stability. Impressively, the KLMO:0.80Eu3+ phosphor with a 0.8 mol concentration of Eu3+ doping also has an internal quantum efficiency (IQE) of up to 84.5%. The packaged white light emitting diode (w-LED) showed a good color rendering index (CRI) (89), correlated color temperature (CCT) (5117 K), and the Commission International de L′Eclairage (CIE) chromaticity coordinates (0.342, 0.345). Furthermore, the KLMO:0.80Eu3+ phosphor was surface-functionalized with oleic acid (OA) (KLMO:0.80Eu3+@OA) to help better identify Level I-III fingerprint details with high resolution and contrast. The results show that the KLMO:Eu3+ and KLMO:Eu3+@OA phosphors have very promising applications in the w-LEDs and latent fingerprints (LFPs).

Preparation of tungsten-doped zinc oxide thin films by co-sputtering for micro-gas sensing devices

Synthesis of a good nanostructure is a vital part in regards to achieving proper gas sensing characteristics. In this study, Tungsten (W) doped ZnO nanostructure is synthesized on micro electro mechanical systems (MEMS) device by co-sputtering process. Appropriate doping concentration to the sensing material is crucial for sensing properties, therefore, 5 different doping concentrations ranging from 0% W to 4% W to the ZnO structure are developed. The structural properties of all the W doped ZnO samples were characterized by Scanning electron microscope (SEM), X-Ray diffraction (XRD) analysis and Energy-dispersive X-ray spectroscopy (EDS) analysis. Sensing properties were calculated with different concentrations of H2 gas ranging from 20 ppm to 100 ppm. All of the W doped ZnO sensors were tested for H2 gas at working temperatures varying from 100 °C to 300 °C to detect the optimal doping concentration and optimal working temperature. At 150 °C, 3% W doped ZnO revealed 67% gas sensing response for 100 ppm H2 gas. Selectivity test with 5 different gases displayed that W doped ZnO sensor has good selectivity over H2 gas at 150 °C.

Erbium activating effect on the photoluminescence, morphology, and structure studies of nano-composite Phospho-silicate SiO2–P2O5

Smart nano-composites Phospho-silicate (SiO2–P2O5) prepared in monolith form containing 16 mol% P2O5, and doped with different mol% of Er3+ ions between 0.5 and 5 mol%; the composite has been synthesized by Sol-Gel technique, and subsequently annealed at 850 °C.X-ray diffraction patterns show the structural properties of the mentioned prepared samples, giving rise to the crystallite sizes to increase in a range between 18, and 20.8 nm as the molar percent of the Er3+ ion increase from 0% to 5%. The morphology, and surface morphology of the prepared samples were characterized using TEM, and FESEM, respectively. The Raman analyses show that the active Raman bands are corresponding to silicate, and phosphate. These bands were enveloped by the strong asymmetric vibrations of Er2O3 at 420, and 840 cm−1, their Bose-Einstein corrected intensities increased gradually by increasing the Er3+ ions concentration in the regions from 3400 up to 3450 cm−1, and 3550 up to 3700 cm−1. The optical studies show that the refractive index increased by increasing Er3+ ions concentration, from 1.7 up to 1.8 for as the concentration of Er3+ ions increase. The photoluminescence are exhibiting an emission with splitting at 1545, and 1555 nm, which is related to the intra 4F transition. It has been found that the optimal doping content of Er is 1 mol% then, after quenching caused by OH groups in Er3+ ions doped Phospho-silicate at higher concentrations. It is obviously that 1 mol% of Erbium ions is a suitable candidate for photonic applications such as Laser waveguide, and optical amplifier.