Barium hexaferrite (BaFe12O19 or BaM) films were grown on c-plane sapphire (0001) substrates by pulsed laser deposition (PLD) to evaluate the effects of laser fluence on their composition, structure, and magnetic properties. A Continuum Surelite pulsed 266 nm Nd:YAG laser was employed, and the laser fluence was varied systemically between 1 and 5.7 [J/cm2]. As the laser fluence changed the stoichiometric transfer between the BaM targets and deposited thin films were affected. The Fe to Ba ratio in the films increased with laser fluence. The films deposited at laser fluences below 4 J/cm2 showed undesirable 3-dimensional island growth. Moreover, an insufficient laser energy resulted in deposition of secondary phases corresponding to Barium monoferrite (BaFe2O4) and Magnetite (Fe3O4). Alternatively, laser fluences above 5 J/cm2 promoted resputtering of the growing film at the substrate and degraded film quality, structure, and magnetic properties. BaM films deposited at 4.8 J/cm2 - the optimal laser fluence - showed excellent c-axis orientation perpendicular to the film plane with an anisotropy field of 16 kOe and saturation magnetization of 4.39 kG. These results clearly demonstrate a strong influence of laser parameters on PLD-grown hexaferrite films and provide a path for high-yield production using pulsed laser depositions systems.