Optical Quantum Transition Line Shapes Research Articles

준 2차원 시스템에서 두 방향의 광 회전 입사에 대한 GaN의 전자 변위와 상호작용에 의한 광 양자 전이 특성

In this paper, optical quantum transition line shapes (QTLSs) and optical quantum transition line widths (QTLWs) are studied in relation to magnetic-field-dependent properties of the electron-deformation potential phonon interaction system. We considered two systems - one was subjected to the right and the other to the left circularly oscillating external fields. The main purpose of this work was to compare the QTLSs, which indicate the absorption power in the two oscillating external fields. The results indicate that the QTLSs of the right are larger than those of the left circularly oscillating external fields, whereas the opposite holds for the QTLWs. In this study, we found that the properties of QTLW and QTLS of GaN significantly increased with increasing temperature and magnetic field strength. The phonon emission transition was found to be the dominant scattering process.

구속 포텐셜에서 반도체 물질(Ge)의 자기장 의존성

This paper proposes an application of artificial neural networks for analyzing electricity market that has insufficient information for calculating equilibrium. Neural networks are constructed and trained on two representative cases in the electricity market. One is for calculating equilibrium price in perfect competition market and the other is for determining whether the transmission congestion occurs. The neural network uses a multilayer structure and learns with backpropagation algorithms for training. The neural networks trained in the case studies calculate the market price with a high probability and also determines an occurrence of the transmission congestion accurately. We study optical quantum transition line shapes (QTLS) showing the absorption power and quantum transition line widths (QTLW) of an electron deformation potential phonon interaction system. In order to analyze quantum transfer, the QTLW and QTLS with the magnetic field dependence was compared in two transfer processes, I.e., intra-Land level transfer process. In order to apply quantum transport theory (QTR) to a system that confines electrons by a square well confining potential, the Liouville equation projected with the Equilibrium Average Projection Scheme (EAPS) was used.

The temperature dependences of the electron-deformation potential phonon interacting system of a quasi two dimensional system under circularly-oscillating fields in CdS, GaN and ZnO

We study the optical quantum transition line shapes and the optical quantum transition linewidths in relation to the magnetic-field-dependent properties of an electron-deformation potential phonon interaction system. We consider two systems — one is subject to right circularly-oscillating external fields and the other is subject to left circularly-oscillatory external fields. We investigated theoretically the temperature dependence of the quantum optical transition of qusi-2-dimensional Landau splitting ystem in CdS, GaN and ZnO.

Optical Quantum Transition of ZnS and Ge of Electron-Piezoeletric Interaction System under Two Circularly Oscillating Fields

We study optical quantum transition line shapes (QTRSs) and optical quantum transition line widths (QTLWs) in relation to magnetic-field dependence properties of the electron- deformation potential phonon interaction system. We consider two systems-one is subject to right circularly oscillating external fields and the other is subject to left circularly oscillatory external fields. The main purpose of this work is to compare QTLSs, which indicate absorption power, in the two oscillating external fields. Our results indicate that the QTLSs of right circularly oscillating external fields is larger than the QTLSs of left circularly oscillating external fields, while the opposite result is obtained for the QTLWs. Through the analysis of this work, we found the increasing properties of QTLW and QTLS of ZnS and Ge with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.

The Optical Properties of Quantum Transition on ZnS and Ge of Electron-Piezoelectric Interaction System Under Two Circularly Oscillating Fields

We study optical quantum transition line shapes (QTRSs) and optical quantum transition line widths (QTLWs) in relation to magnetic-field dependence properties of the electron-piezoelec potential phonon interaction system. We consider two systems-one is subject to right circularly oscillating external fields and the other is subject to left circularly oscillatory external fields. The main purpose of this work is to compare QTLSs, which indicate absorption power, in the two oscillating external fields. Our results indicate that the QTLSs of right circularly oscillating external fields is larger than the QTLSs of left circularly oscillating external fields, while the opposite result is obtained for the QTLWs. Through the analysis of this work, we found the increasing properties of QTLW and QTLS of ZnS and Ge with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.

Properties of Optical Quantum Transition of GaN and CdS In Electron Deformation Potential Phonon Interacting Qusi-Two Dimensional System under Two Circularly Oscillating Fields

We study optical quantum transition line shapes (QTRSs) and optical quantum transition line widths (QTLWs) in relation to magnetic-field dependence properties of the electron-deformation potential phonon interaction system. We consider two systems - one is subject to right circularly oscillating external fields and the other is subject to left circularly oscillatory external fields. The main purpose of this work is to compare QTLSs, which indicate absorption power, in the two oscillating external fields. Our results indicate that the QTLSs of right circularly oscillating external fields is larger than the QTLSs of left circularly oscillating external fields, while the opposite result is obtained for the QTLWs. Through the analysis of this work , we found the increasing properties of QTLW and QTLS of GaN and CdS with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.(PACS: 72.10.Bg,72.10.Di)

Properties of the optical quantum transitions of ZnS and Ge for an electron-piezoeletric interaction system under two circularly oscillating fields

We study the optical quantum transition line shapes (QTLSs) and the optical quantum transition line widths (QTLWs) in relation to magnetic-field-dependent properties of the electron-deformation potential phonon interaction system. We consider two systems — one is subject to right circularly oscillating external fields and the other is subject to left circularly oscillatory external fields. The main purpose of this work is to compare QTLSs, which indicate absorption power, in the two oscillating external fields. Our results indicate that the QTLSs of right circularly oscillating external fields are larger than the QTLSs of left circularly oscillating external fields while the opposite result is obtained for the QTLWs. Through the analysis of this work, we found the properties of the QTLW and the QTLS of ZnS and Ge increased with increasing temperature and the magnetic fields. We also found the dominant scattering process to be the phonon emission transition process.

Magnetic dependence of cyclotron transition absorption in piezoelectric materials based on the quantum transport theory

We investigated theoretically the magnetic field dependence of the quantum optical transition of quasi 2-Dimensional Landau splitting system, in CdS and ZnO. Through the analysis of the current work, we found the increasing properties of the optical Quantum Transition Line Shapes (QTLSs) which show the absorption power and the Quantum Transition Line Widths(QTLWs) with the magnetic-field in CdS and ZnO. We also found that QTLW, γ( B) total of CdS < γ( B) total of ZnO in the magnetic field region B < 25 Tesla.

The Temperature Dependence of the Quantum Transition Properties of the Quasi-two-dimensional System in Quasi-two-dimensional Semiconductors

We investigated theoretically the temperature dependence of the quantum optical tran- sition of quasi-2-dimensional Landau splitting, in GaN and GaAs. We apply the quantum transport theory (QTR) to a system of electrons confined in a potential. We use the projected Liouville equa- tion method with equilibrium average projection scheme (EAPS). Through the analysis of this work, we found increasing optical quantum transition line shapes (QTLSs) and the quantum tran- sition line widths (QTLWs) in GaN and GaAs with increasing temperature. We also found the temperature dependences of the scattering factor functions: (T) of GaN < (T) of GaAs in the temperature region 50 K < T and (T) of GaAs < (T) of GaN in the temperature T < 50 K and = 394 µm.

THE THERMAL OPTICAL QUANTUM TRANSITION PROPERTIES OF PIEZOELECTRIC MATERIALS UNDER OSCILLATING EXTERNAL FIELD

ABSTRACT We consider two systems—the one system is subject to circularly polarized oscillatory external fields and the other system is subject to linearly polarized oscillatory external field. The main purpose of this work is that comparisons of the optical quantum transition line shapes (QTLS) which show the absorption power and the quantum transition line widths (QTLW) in both directional polarized oscillatory external field. Our results indicate that the QTLS of circularly polarized oscillatory external field is larger than the QTLS of linearly polarized oscillatory external field, while the opposite result is obtained for the QTLW. In both directional polarized oscillatory external field, we analyze the temperature dependence of the QTLS and the QTLW in various cases. In order to analyze the quantum transition, we compare the temperature dependence of the QTLW and QTLS of two transition process, the intra Landau level transition process and the inter Landau level transition process. We study the thermal properties of electron-piezoelectric phonon interacting system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average ProjectionScheme (EAPS).

THE MAGNETIC FIELD DEPENDENCE PROPERTIES OF ELECTRON-PIEZOELECTRIC PHONON INTERACTING MATERIALS IN SQUARE WELL CONFINEMENT POTENTIAL

ABSTRACT We consider the system is subject to the linearly polarized oscillatory external field. We study the optical quantum transition line shapes (QTLS) which show the absorption power and the quantum transition line widths (QTLW) of electron-piezoelectric phonon interacting system. We analyze the magnetic field dependence of the QTLS and the QTLW in various cases. In order to analyze the quantum transition, we compare the magnetic field dependence of the QTLW and QTLS of two transition process, the intra-Landau level transition process and the inter-Landau level transition process.

The magnetic field dependence of the deformation potential materials in the square well confinement potential

Abstract We study the optical Quantum Transition Line Shapes (QTLS) which show the absorption power and the Quantum Transition Line Widths (QTLW) of electron-deformation potential phonon interacting systems. In order to analyze the quantum transition, we compare the magnetic field dependencies of the QTLWand the QTLS on two transition processes, namely the intra-Landau level transition process and the inter-Landau level transition process. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS).

Magnetic Properties of Optical Quantum Transition Line Shapes and Line Widths of Electron–Piezoelectric Potential Phonon Interacting Materials under Circularly Oscillating Fields

We study optical quantum transition line shapes (QTLSs) and optical quantum transition line widths (QTLWs) in relation to magnetic-field dependence properties of the electron–piezoelectric potential phonon interaction system. We consider two systems – one is subject to right circularly oscillating external fields and the other is subject to left circularly oscillatory external fields. The main purpose of this work is to compare QTLSs, which indicate absorption power, in the two oscillating external fields. Our results indicate that the QTLSs of right circularly oscillating external fields is larger than the QTLSs of left circularly oscillating external fields, while the opposite result is obtained for the QTLWs.

THE TEMPERATURE PROPERTIES OF THIN FILM PIEZOELECTRIC MATERIALS

ABSTRACT Based on quantum transport theory, we analysis the temperature dependence of optical quantum transition line shapes (QTLS) of GaAs and CdS in some temperatures, through the numerical analysis of theoretical result. We study the thermal properties of electron-piezoelectric phonon interacting system in the confinement of electrons by square well confinement potential. In order to analysis the quantum transition process, we compare the temperature dependence of the QTLW and the QTLS of two transition process, which are the phonon emission transition process and the phonon absorption transition process. We use the theory of the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS).