Abstract Ultrawide bandgap (UWBG) semiconductors—such as beta gallium oxide (β‐Ga₂O₃), aluminum nitride (AlN) and diamond—exhibit exceptional electrical and thermal properties, enabling next‐generation power electronics, RF systems, and quantum devices. However, the high power densities and extreme operating conditions of UWBG devices pose significant thermal management challenges. This review provides a comprehensive overview of thermal characterization techniques essential for understanding and mitigating self‐heating, thermal bottlenecks, and reliability concerns in UWBG systems. Optical methods such as thermoreflectance imaging, micro‐Raman thermometry, and IR thermography, alongside electrical approaches like gate resistance thermometry (GRT) and micro thin‐film thermocouples (micro‐TFTCs), are critically compared in terms of resolution, sensitivity, and application scope. The review also highlights recent advancements in hybrid techniques and material innovations to enhance heat dissipation. By evaluating the strengths and limitations of each method, this paper guides the selection of suitable thermal metrology tools for diverse UWBG device architectures and operating environments, facilitating their practical deployment in high‐performance electronics.
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