One-step Doping Research Articles

Porous biochar with a tubular structure for photothermal CO2 cycloaddition: One-step doping versus two-step doping

Porous biochar with a tubular structure for photothermal CO2 cycloaddition: One-step doping versus two-step doping

Enhancing the performance of β-Ga2O3 solar-blind photodetectors based on ZnGa2O4 substrate by bottom-up Zn diffusion doping

Enhancing the performance of β-Ga2O3 solar-blind photodetectors based on ZnGa2O4 substrate by bottom-up Zn diffusion doping

One-step approach to Quaternary (B, N, P, S)-Doped hierarchical porous carbon derived from Quercus Brantii for highly selective and efficient CO2 Capture: A combined experimental and extensive DFT study

One-step approach to Quaternary (B, N, P, S)-Doped hierarchical porous carbon derived from Quercus Brantii for highly selective and efficient CO2 Capture: A combined experimental and extensive DFT study

Emitter-Quencher Pair of Single Atomic Co Sites and Monolayer Titanium Carbide MXenes for Luminol Chemiluminescent Reactions.

A facile, one-step doping protocol was adopted to synthesize Co single atomic site catalysts (SASCs) in UiO-66 metal-organic frameworks. In view of highly uniform active sites of Co-O6 moieties, the SASCs specifically contribute to catalyzing the generation of a large amount of singlet oxygen instead of superoxide or hydroxyl radicals, which endows Co SASCs with a the remarkable enhancement effect (∼3775 times) on luminol chemiluminescent (CL) emission. Interestingly, monolayer titanium carbide MXenes can drastically quench the CL signal of the Co SASC-boosted luminol reaction by ∼94.6% as highly efficient luminescent absorbents. Furthermore, the emitter-quencher pair of Co SASCs and titanium carbide MXenes was successfully adopted to develop an immunoassay method for cardiac troponin I (cTnI) on an immunochromatographic test strip platform. With a sandwich immunoreaction mode, a titanium carbide MXene-labeled cTnI tracer antibody was captured on the test line of a test strip, which significantly inhibited the CL response of the Co SACs-boosted luminol system. The dynamic range for quantitating cTnI is 1.0-100 pg mL-1, with a detection limit of 0.33 pg mL-1 (3σ). The test strip was successfully used to detect cTnI in human serum samples collected from cardiopathy patients. This proof-of-principle work manifests both the CL enhancement of SASCs and the quenching behavior of MXenes, which shows the thrilling prospects of combinational usage of the two functionalized nanomaterials for tracking biological recognition events.

Understanding the role of nitrogen and sulfur doping in promoting kinetics of oxygen reduction reaction and sodium ion battery performance of hollow spherical graphene

Understanding the role of nitrogen and sulfur doping in promoting kinetics of oxygen reduction reaction and sodium ion battery performance of hollow spherical graphene

Fabrication of Co doped MoS2 nanosheets with enlarged interlayer spacing as efficient and pH-Universal bifunctional electrocatalyst for overall water splitting

Fabrication of Co doped MoS2 nanosheets with enlarged interlayer spacing as efficient and pH-Universal bifunctional electrocatalyst for overall water splitting

Controllable one-step doping synthesis for the white-light emission of cesium copper iodide perovskites

In this paper, a controllable one-step doping method has been successfully adopted in the cesium copper iodide perovskite’s luminescence, a high-quality white-light emission with Commission Internationale de l´Eclairage (CIE) coordinates of (0.3397, 0.3325), and a color rendering index (CRI) reaching up to 90 was realized in a convenient way. Through adding impurities into the Cs 3 Cu 2 I 5 system, high efficiency and stable CsCu 2 I 3 was synthesized, and the coexistence of varied high luminescence phases realized the white lighting. Strikingly, blue-emitting Cs 3 Cu 2 I 5 and yellow-emitting CsCu 2 I 3 could coexist, and their respective luminescence was not interacted in the compound, which was beneficial for acquiring a single emission and highly efficient white lighting. This work carried out a deep exploration of the Cu-based metal halides, and would be favorable to the applications of lead-free perovskites.

Large specific surface area S-doped Fe–N–C electrocatalysts derived from Metal–Organic frameworks for oxygen reduction reaction

Large specific surface area S-doped Fe–N–C electrocatalysts derived from Metal–Organic frameworks for oxygen reduction reaction

From children’s toy to versatile sensor: One-step doping of Play-Doh with primary amino group for explosive detection both on surfaces and in solution

From children’s toy to versatile sensor: One-step doping of Play-Doh with primary amino group for explosive detection both on surfaces and in solution

Doping of donor-acceptor polymers with long side chains via solution mixing for advancing thermoelectric properties

Doping of donor-acceptor polymers with long side chains via solution mixing for advancing thermoelectric properties

Enhancing the electrochemical performance of LiNi0.8Co0.15Al0.05O2 by a facile doping method: Spray-drying doping with liquid polyacrylonitrile

Enhancing the electrochemical performance of LiNi0.8Co0.15Al0.05O2 by a facile doping method: Spray-drying doping with liquid polyacrylonitrile

Concurrent Phosphorus Doping and Reduction of Graphene Oxide

Doped graphene materials are of huge importance because doping with electron-donating or electron-withdrawing groups can significantly change the electronic structure and impact the electronic and electrochemical properties of these materials. It is highly important to be able to produce these materials in large quantities for practical applications. The only method capable of large-scale production is the oxidative treatment of graphite to graphene oxide, followed by its consequent reduction. We describe a scalable method for a one-step doping of graphene with phosphorus, with a simultaneous reduction of graphene oxide. Such a method is able to introduce significant amount of dopant (3.65 at. %). Phosphorus-doped graphene is characterized in detail and shows important electronic and electrochemical properties. The electrical conductivity of phosphorus-doped graphene is much higher than that of undoped graphene, owing to a large concentration of free carriers. Such a graphene material is expected to find useful applications in electronic, energy storage, and sensing devices.

Through-Wafer Polysilicon Interconnect Fabrication with In-Situ Boron Doping

AbstractBulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon material in order to develop fast one-step doping process, without additional diffusion. The via holes can be processed by high-aspect ratio silicon etching with inductively coupled plasma (ICP). Only one deep ICP etching is required if the wafer is mechanically ground (from the backside) to reduce the wafer thickness of 500 microns to a typical of 400, in order to overcome deep etching sidewall profile problems. After hole formation with ICP the via plug fabrication process continues by growing an insulating thermal oxide layer with a thickness of the order of a micron, followed by an in-situ boron doped LPCVD polysilicon growth to fill the holes with sufficient step coverage. The polysilicon growth temperature at 680°C ensures sufficient step coverage, reasonable furnace process time and enables planarization processing, such as grinding and chemical-mechanical polishing (CMP). The subsequent planar processing typically requires planarization of the polysilicon layer down to the original silicon (or oxide) surface with CMP, and some doping activation step, which usually can be performed together with some additional oxidation step. Applications of the via plugs in the field of silicon-based sensors or actuators enable significant reduction of the front surface wiring density, which opens additional space for denser packing or other desired components.

Influence of channel doping-profile on camel-gate field effect transistors

We report the performance of GaAs camel-gate FETs and its dependence on device parameters. In particular, the performance dependence on the doping-profile of a channel was investigated. In this study, one-step, bi-step, and tri-step doping channels with the same doping-thickness product are employed in camel-gate FETs, while keeping other parameters unchanged, For a one-step doping channel FET, theoretical analysis reveals that a high doping channel would provide a large transconductance which is suitable for logic applications. Decreasing the channel concentration increases the drain current and the barrier height. For a tri-step doping channel FET, it is found that the output drain current and the barrier height remain large and the relatively voltage-independent transconductance is also increased. These are the requirements for the large input signal power amplifiers. A fabricated camel-gate FET with a tri-step doping channel exhibits a large drain current density larger than 750 mA/mm and a potential barrier greater than 1.0 V. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is up to +1.5 V. A 1.5/spl times/100 /spl mu/m/sup 2/ device is found to have a f/sub t/ of 30 GHz with a very low input capacitance.

Fullerene derivatives and fullerene superconductors

Fullerene derivatives and fullerene superconductors

Synthesis, superconductivity and ESR characterization of Rb 3C 60 crystals

Synthesis, superconductivity and ESR characterization of Rb 3C 60 crystals