The structural and electronic properties of the c(2×2) reconstruction of the C-terminated β-SiC(001) surface have been investigated by ab initio calculations based on density functional theory. Employing the generalized gradient approximation, the top layer of this surface is found to consist of triple-bonded C dimers bridging Si atoms in the second layer. The electronic structure of the surface has been calculated on the basis of a semi-infinite geometry using our scattering theoretical method together with one-particle Green's functions. The resulting surface band structure is in good agreement with angle-resolved photoelectron spectroscopy data. Furthermore, our investigations show that compressive stress along the dimer direction induces a tilt of the surface C dimers. The calculated filled- and empty-state scanning microscopy topographs show virtually symmetric and asymmetric height profiles, respectively. These findings are in good agreement with recent experimental observations.
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