The modulation response of a semiconductor laser can be enhanced by coupling it to an external cavity with frequency-selective feedback. This creates a comb of transmission bands where the modulation response is high, at the cavity round-trip frequency and its harmonics. In a previous publication, we related the bandwidths of these bands to the material and structural parameters of a bulk laser. We showed that a nonzero linewidth enhancement factor together with a nonzero intermediate facet reflectivity lead to deep nulls close to the peaks of these transmission bands. This suggests that quantum-well (QW) lasers, which have a low linewidth enhancement factor, may give a better performance than bulk lasers. To test this hypothesis, we have extended our analysis to model QW lasers coupled to a fiber grating. Carrier transport, carrier heating, intraband carrier fluctuations, and nonparabolic band structures are considered. We show that electron carrier transport and amplitude-phase coupling in the separate-confinment-heterostructure (SCH) layer contribute to the nulls in the modulation response. Therefore, the apparent advantage of having a reduced linewidth enhancement factor that we found in our previous analysis cannot be fully realized by using QW lasers.
Read full abstract