A simple first-order model of semiconductor non-volatile memory (NVM) devices is formulated. Conduction through the dielectric layers is as usual described by a dielectric resistivity, ρ but unlike the usual models which describe ρ by theoretical expressions, we have chosen to obtain ρ from experimental data on MIS capacitors. It turns out that the empirical relations for ρ for the thin-film dielectric materials of interest (SiO 2, Si 3N 4 and Al 2O 3) can be well approximated by simple exponential dependences on electric field. This is responsible for the success of the present approach, since it leads to a further simplification in the analytical solution for threshold voltage shifts (using the well-known equivalent circuits of dual-dielectric structures) of NVM devices. It is shown that a wide variety of NVM structures can be described in terms of two technology parameters, β 1 and β 2, which contain the geometry, materials, and relevant parameters describing the charging (write/erase) mechanisms. No adjustable parameters are present. Predictions of threshold voltage shifts are found to be in reasonable agreement with experiment. This model is well suited to facilitate computer-aided-design (CAD) of NVM devices. While it is recognized that this model ignores several physical details (e.g. bulk charging of dielectric layers) and is therefore not universal, it nevertheless can be readily used to predict the first-order circuit behaviour of most NVM devices, when β 1 and β 2 are properly obtained.