Nonlinear Optical Rectification Research Articles

Nonlinear optical rectification in a vertically coupled lens-shaped InAs/GaAs quantum dots with wetting layers under hydrostatic pressure and temperature

In this paper we explore the structure parameters, hydrostatic pressure and temperature effects on Nonlinear optical rectification (NOR) in an asymmetric vertically coupled lens-shaped InAs/GaAs quantum dots.During epitaxial growth, lens-shaped quantum dots (QDs) are formed on the wetting layer (WL). Many theoretical works have neglected WL and its effect on nonlinear optical properties of QD-based systems for sake of simplicity. However, in this work the WL has been shown to be so influential in the intersubband energy and nonlinear optical rectification magnitude. Also, a detailed and comprehensive study of the nonlinear optical rectification is theoretical investigated within the framework of the compact density-matrix approach and finite difference method (FDM).It's found that nonlinear optical rectification coefficient is strongly affected not only by the WL, but also by the pressure, temperature and the coupled width between the QDs.Obtained results revealed that a red or a blue shift cane be observed. This behavior in the NOR gives a new degree of freedom in regions of interest for device applications.

The nonlinear optical rectification and second harmonic generation in asymmetrical Gaussian potential quantum well: Effects of hydrostatic pressure, temperature and magnetic field

In the present work, the effects of hydrostatic pressure, temperature, and magnetic field on the nonlinear optical rectification (OR) and second-harmonic generation (SHG) in asymmetrical Gaussian potential quantum well (QW) have been investigated theoretically. Here, the expressions for the optical properties are calculated by the compact-density-matrix approach and iterative method. Simultaneously, the energy eigenvalues and their corresponding eigenfunctions have been obtained by using the finite difference method. The energy eigenvalues and the shape of the confined potential are modulated by the hydrostatic pressure, temperature, and magnetic field. So the results of a number of numerical experiments indicate that the nonlinear OR and SHG strongly depends on the hydrostatic pressure, temperature, and magnetic field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons.

Influence of position-dependent effective mass on the nonlinear optical properties of impurity doped quantum dots in presence of Gaussian white noise

We examine the influence of position-dependent effective mass (PDEM) on a few nonlinear optical (NLO) properties of impurity doped quantum dots (QDs) in presence and absence of noise. The said properties include total optical absorption coefficient (TOAC), nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG). The impurity potential is modeled by a Gaussian function and the noise applied being Gaussian white noise. The profiles of above NLO properties have been pursued as a function of incident photon energy for different values of PDEM. Using PDEM the said profiles exhibit considerable departure from that of fixed effective mass (FEM). Presence of noise almost invariably amplifies the NLO properties with a few exceptions. A change in the mode of application of noise also sometimes affects the above profiles. The investigation furnishes us with a detailed picture of the subtle interplay between noise and PDEM through which the said NLO properties of doped QD systems can be tailored.

双波泵浦非对称量子阱的光学整流效应

双波泵浦非对称量子阱的光学整流效应

Modulating nonlinear optical properties of impurity doped quantum dots via the interplay between anisotropy and Gaussian white noise

The influence of anisotropy on various nonlinear optical (NLO) properties such as total optical absorption coefficient (TOAC), nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG) of impurity doped quantum dots (QDs) have been investigated in presence and absence of noise. Noise has been applied to the system additively and multiplicatively. The impurity potential is modeled by a Gaussian function and the noise applied being Gaussian white noise. A perpendicular magnetic field emerges out as a confinement source and a static external electric field has been applied. Profiles of the optical properties have been monitored as a function of incident photon energy for different values of anisotropy. In this connection the role of mode of application of noise (additive/multiplicative) has also been analysed. The interplay between noise and anisotropy has been found to profoundly affect the NLO properties. The investigation reveals that there are only one or two anisotropy regimes (depending on the particular NLO property under consideration) where noise-induced enhancement of the NLO property can be realized. Thus, anisotropy appears to be the central parameter by which the noise-induced enhancement of NLO properties of doped QD systems can be tailored.

Electric field effect on the second-order nonlinear optical properties in semiparabolic quantum wells

Electric field effect on the second-order nonlinear optical properties in semiparabolic quantum wells are studied theoretically. Both the second-harmonic generation susceptibility and nonlinear optical rectification depend dramatically on the direction and the strength of the electric field. Numerical results show that both the second-harmonic generation susceptibility and nonlinear optical rectification are always weakened as the electric field increases where the direction of the electric field is along the growth direction of the quantum wells, which is in contrast to the conventional case. However, the second-harmonic generation susceptibility is weakened, but the nonlinear optical rectification is strengthened as the electric field increases where the direction of the electric field is against the growth direction of the quantum wells. Also it is the blue (or red) shift of the resonance that is induced by increasing of the electric field when the direction of the electric field is along (or against) the growth direction of the quantum wells. Finally, the resonant peak and its corresponding to the resonant energy are also taken into account.

The nonlinear optical rectification in asymmetrical and symmetrical Gaussian potential quantum wells with applied electric field

A detailed investigation of nonlinear optical rectification (OR) of asymmetrical and symmetrical Gaussian potential quantum wells (QWs) under the influence of applied electric field by using the compact-density-matrix approach is presented. We find that the approximation of the asymmetrical Gaussian potential QWs is extremely unreasonable in the previous works, some new and reliable results are obtained by us. The energy eigenvalues and their corresponding eigenfunctions of the asymmetrical and symmetrical Gaussian potential QWs are calculated with the differential method. According to the results obtained from the present work, we find that the applied electric field and the geometry factors have great influence on the nonlinear OR in these system.

Effect of Surface States on Terahertz Emission from the Bi2Se3 Surface.

Three-dimensional topological insulators are materials that behave as an insulator in the interior, but as a metal on the surface with Dirac surface states protected by the topological properties of the bulk wavefunctions. The newly discovered second surface state, located about 1.5 eV above the conduction band in Bi2Se3 allows direct photoexcitation of the surface electrons in n-doped samples with a Ti:sapphire femtosecond laser. We have observed efficient THz generation from the Bi2Se3 basal plane upon femtosecond optical excitation. By performing polarization-resolved studies on the emitted THz spectrum, two emission mechanisms have been identified, namely, emission generated from the transient photocurrent under the influence of the surface depletion field and from nonlinear optical rectification. The two types of emission are governed by distinct selection rules. And while the former is characterized by a narrow-band spectrum, the latter, involving almost instantaneous optical transitions, has a broad bandwidth and is enhanced by the presence of resonant transitions. These two emission mechanisms are further separated by their distinct doping dependence upon exposure to ambient air. With surface selectivity, THz emission spectroscopy thus provides a valuable spectroscopic tool for studies of the optical conductivity and dynamics of the surface state in centrosymmetric Bi2Se3.

Influence of applied electric fields on the electron-related second and third-order nonlinear optical responses in two dimensional elliptic quantum dots

The coefficients of the second-order nonlinear optical rectification and the generation of second and third harmonics, related to electron energy transitions in a two-dimensional elliptical quantum dot are calculated. The conduction band states are obtained using the finite element method to numerically solve the effective mass Schrödinger differential equation in the parabolic approximation, including the influence of an externally applied static electric field. It comes about that the geometry of the ellipse has a strong influence on the optical response, being the large eccentricity case the more favorable one. Furthermore, it is shown that the application of an electric field is of most importance for achieving well-resolved higher harmonics signals.

Nonlinear refractive index change and optical rectification in a GaN-based step quantum wells with strong built-in electric field

Based on the compact density matrix approach, the linear and nonlinear refractive index change (RIC) and optical rectification (OR) coefficients in a GaN -based step QW with strong built-in electric field (BEF) have been theoretically deduced and investigated in detail. The analytical electronic state is derived by the two airy functions. And the band nonparabolicity is taken into account by using an energy dependence effective mass (EDEM) method. Numerical calculations on a four-layer AlN / GaN / Al x Ga 1-x N / AlN step QW are performed, and the curves for the geometric factors, the linear, the nonlinear, the total RICs and the OR coefficients as functions of the structural parameters of the step QW are discussed. The features for these curves were specified and reasons for the features were explained reasonably. It is found that the decreasing of well width Lw, and step barrier width Lb and the doped concentration x in step barrier will result in the significant enhancement of the RICs. With the decrease of Lw, Lb and x, the resonant photon energies of RIC and OR coefficients have obvious blue-shift. Moreover, the RIC and OR coefficients behave different dependence on the structural parameters of the GaN -based step QWs. The profound physical reasons are also analyzed.

Nonlinear optical rectification of hydrogenic impurity in a disk-like parabolic quantum dot: The role of applied magnetic field

We report a detailed theoretical study of the effect of combined electric and magnetic field on the nonlinear optical rectification of a hydrogenic impurity, confined in a two dimensional disk-like quantum dot, with parabolic confinement potential. We use the compact density matrix formalism and iterative method to obtain nonlinear optical rectification and absorption coefficients. To find energy levels and wave functions, we employ exact diagonalization method in the effective mass approximation. As main result, we found that the transition energy from ground to first excited state redshifts with increasing the magnetic field while blueshifts for transition from ground to second excited state, moreover, for former transition, nonlinear optical rectification coefficient decreases with increasing magnetic field in contrast to that occurs for latter one.

Nonlinear optical rectification and second-harmonic generation in a semi-parabolic quantum well under intense laser field: Effects of electric and magnetic fields

The effects of electric and magnetic fields on the nonlinear optical rectification and second harmonic generation coefficients related with intersubband transitions in a semi-parabolic quantum well under intense laser field are theoretically studied. The energy levels and corresponding wave functions are obtained by solving the conduction band Schrödinger-like equation in the parabolic approximation and the envelope function approach. Numerical calculations are presented for a typical GaAs/Ga1-xAlxAs quantum well. The results show that both the non-resonant intense laser field and the static external fields have significant influences on the magnitude and resonant peak energy positions of the coefficients under study.

On-chip high-speed optical detection based on an optical rectification scheme in silicon plasmonic platform.

We theoretically investigate the nonlinear optical rectification (OR) process induced in a silicon plasmonic slot waveguide (PSW) with an electro-optic polymer infiltrated into the slot. An electrical signal is generated between the two metal slabs when an intensity-modulated optical signal is injected into the PSW. Optimization of the geometrical parameters is performed to obtain the highest OR efficiency. Specifically, a voltage responsivity over 1V/W and a normalized OR efficiency of 2.25 × 10(-4)W(-1) are predicted in a compact PSW with active size of 50nm × 90nm × 22.4μm for a modulation speed of 400GHz. The OR efficiency is further increased when introducing the electrically induced OR contribution. The OR characterizes a relatively flat response for a wide range of optical wavelengths from 1.25μm to 1.7μm and supports a RF cut-off frequency up to 800 GHz. This efficient OR process paves a new way for realization of high-speed broadband optical detection and demodulation in silicon chips.

The control of the nonlinear optical response of semiconductor quantum dots

In the present work, we investigate the nonlinear optical properties emerged from excitonic features in an experimentally realized spherical parabolic semiconductor quantum dot (QD). The lowest exciton states together with relevant wave functions are calculated through the expansion method with direct matrix diagonalization method within the effective mass approximation. The effect of the size of QD and confinement potential in exciton state is studied in details. Results show that with increasing the size of the QD the energy of exciton decreases because of decreasing of the effect of coulomb potential. Using the compact density matrix formalism second order nonlinear optical rectification (χ(2)) are obtained. By means of the applied electric and magnetic field we manipulate the exciton states and control the nonlinear optical response in a typical GaAs, InAs, CdSe QDs. Our model system presents a way to control the performance of excitonic optoelectronic devices based on semiconductor nanostructures.

Physical mechanisms of terahertz pulse emission from photoexcited surfaces of tellurium crystals

We report on terahertz (THz) emission from tellurium crystal surfaces excited by femtosecond optical pulses. Measurements were performed on three differently cut Te samples and with different wavelength optical excitation pulses. THz pulse amplitude dependences on the azimuthal angle measured at various excitation wavelengths have evidenced that three different mechanisms are responsible for THz generation in tellurium: second order nonlinear optical rectification effect, dominating at lower excitation photon energies, as well as transverse and ordinary photo-Dember effects, which emerge at energies larger than 0.9 eV. The shapes of the azimuthal angle dependences were also explained by theoretical model.

Excitation of terahertz surface polaritons in a cylindrical waveguide by femtosecond laser pulses

Generation of terahertz surface polaritons in homogeneous round cross-section plasma waveguides upon nonlinear optical rectification of femtosecond laser pulses is analyzed theoretically. It is assumed that nonlinear polarization inducing a surface electromagnetic wave is formed at the waveguide boundary in a thin layer of the nonlinear dielectric that surrounds the waveguide. The efficiency of the femtosecond radiation conversion into surface polaritons is studied as a function of the waveguide radius and duration of the exciting laser pulse.

Polaron effects on nonlinear optical rectification in asymmetrical Gaussian potential quantum wells with applied electric fields

Polaron effects on nonlinear optical rectification in asymmetrical Gaussian potential quantum wells are studied by the effective mass approximation and the perturbation theory. The numerical results show that nonlinear optical rectification coefficients are strongly dependent on the barrier hight V0 of the Gaussian potential quantum wells, the range L of the confinement potential and the electric field F. Besides, the numerical results show that no matter how V0, L and F change, taking into consideration polaron effects, the optical rectification coefficients χ0(2) get greatly enhanced.

Effect of an electric field on the nonlinear optical rectification of a quantum ring

We have studied the effects of an external electric field on the nonlinear optical rectification of a semiconductor quantum ring. An electric field applied in the ring plane destroys the rotational invariance. Calculations are performed by using the matrix diagonalization method and the compact density-matrix approach within the effective-mass approximation. The results indicate that an increase of electric field gives the red shift of the peak positions of nonlinear optical rectification. The roles of ring size and magnetic field strength as control parameters on this nonlinear property have been investigated. Our results show rich nonlinear optical rectification for quantum rings in the presence of electric fields, which effectively displays the signature of the Aharonov–Bohm oscillation.

Electric field effect on the nonlinear optical rectification properties in III–V nitrides semi-parabolic quantum well

By using the compact-density-matrix approach and iterative procedure, a detailed procedure for the calculation of the optical rectification (OR) tensor is given in the electric-field-biased semi-parabolic quantum wells (QW's). The simple analytical formula for the OR coefficient in the systems is also deduced. By adopting the methods of envelope wave function and the displaced harmonic oscillator approach, the electronic states in semi-parabolic QW's with applied electric fields are exactly solved. Numerical results on typical Al x Ga 1-x N / GaN materials show that, nonlinear OR coefficient is strongly affected only by the confinement frequency ω0, the applied electric field. Moreover, OR also sensitively depends on the relaxation rate of the systems.

Nonlinear optical rectification in a two-dimensional system

The optical rectification (OR) in the two-dimensional electron–hole system is investigated theoretically. An analytical expression formula of the OR coefficient is obtained via the framework of compact density matrix approach and the iterative method. The results show that the OR coefficient depends strongly on the system׳s size and the relaxation time. A more obvious OR coefficient should be found by adjusting an appropriate choice of the system parameters.