Nonmagnetic State Research Articles

Electronic transport properties of Rb2AsAuX6 (X = Cl, Br) halide double perovskites for energy harvesting applications

Herein, we investigated the physical characteristics of two narrow band gap halide double perovskites (HDPs) Rb2AsAuX6 (X = Cl, Br) by using density functional theory (DFT) calculations. Both compounds exhibit thermodynamical stability with non-magnetic ground states and stable cubic symmetry supported by geometry optimization, tolerance factor criteria, and negative formation enthalpies. The electronic structure analysis reveals semiconducting behavior, with bandgaps of 0.66 for Rb2AsAuCl6 and 0.07 eV for Rb2AsAuBr6, attributed primarily to the interaction between As and Au states near the Fermi level. Optical investigations highlight significant absorption in the visible spectrum with onset edges in the infrared (IR) region in addition to low reflectivity (less than 10 %) and high conductivity makes both HDPs potential contender for optoelectronic device applications across a broad spectrum. The thermoelectric analysis reveals promising efficiency, with figure of merit (ZT) values approaching ∼0.8 for Rb2AsAuCl6 and ∼0.5 for Rb2AsAuBr6 at room temperature. The results indicate that Rb2AsAuCl6 and Rb2AsAuBr6 have the potential to be used in future optoelectronic and thermoelectric applications due to their unique combination of structural stability, tunable bandgaps, and efficient thermoelectric performance.

Nearly linear orbital molecules on a pyrochlore lattice.

The interplay of spin-orbit coupling with other relevant parameters gives rise to the rich phase competition in complex ruthenates featuring octahedrally coordinated Ru4+. While locally, spin-orbit coupling stabilizes a nonmagnetic Jeff = 0 state, intersite interactions resolve one of two distinct phases at low temperatures: an excitonic magnet stabilized by the magnetic exchange of upper-lying Jeff = 1 states or Ru2 molecular orbital dimers driven by direct orbital overlap. Pyrochlore ruthenates A2Ru2O7 (A = rare earth, Y) are candidate excitonic magnets with geometrical frustration. We synthesized In2Ru2O7 with covalent In─O bonds. This pyrochlore ruthenate hosts a local Jeff = 0 state at high temperatures; however, at low temperatures, it forms a unique nonmagnetic ground state with nearly linear Ru─O─Ru molecules, in stark contrast to other A2Ru2O7 compounds. The disproportionation of covalent In─O bonds drives Ru2O molecule formation, quenching not only the local spin-orbit singlet but also geometrical frustration.

Structural stability, optoelectronic, thermoelectric, and elastic characteristics of X2ScBiO6 (X= Mg, Ca, and Ba) double perovskites for energy harvesting: First-principles analysis

Double perovskites have emerged as a potential new material for optoelectronic and thermoelectric applications. We explored structural, electronic, optical, thermoelectric, and elastic properties of double oxides perovskite, X2ScBiO6 (X = Mg, Ca, and Ba) through density functional theory (DFT). The most stable structure, according to the optimized structural parameters, is a cubic Fm3m (225) symmetry with a nonmagnetic (NM) state. We have utilized TB-mBJ to estimate the band structure and density of states. The semiconductor nature is predicted with indirect bandgap values of 1.90 eV, 1.39 eV, and 1.11 eV for Mg2ScBiO6, Ca2ScBiO6, and Ba2ScBiO6, respectively. Notable optical responses such as higher absorption (>105 cm−1) and low reflectivity for X2ScBiO6 suggest appropriate candidates for optoelectronic device applications. The efficient thermoelectric order has been investigated under semiclassical Boltzmann theory and constant relaxation time approximation as implemented in the BoltzTraP (BT) code. Several parameters, such as the Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit, have been calculated. The ductile character of the X2ScBiO6 (X = Mg, Ca, and Ba) compounds is further supported by the elastic properties. Consequently, the results show that the compounds investigated could be good alternatives for thermoelectric and photovoltaic applications.

Weyl fermion excitations in the ideal Weyl semimetal CuTlSe2

An ideal Weyl semimetal is characterized by a dispersion in which only Weyl cones intersect the Fermi level, with low-energy behavior being governed by Weyl fermions. Although ideal Weyl semimetals have long been anticipated, only a few are realized in nonmagnetic materials. In this study, we confirm the presence of Weyl-fermion excitations in the ideal Weyl semimetal CuTlSe2 via a combination of magnetoresistance, Hall-effect, magnetic-susceptibility, nuclear magnetic resonance (NMR), and muon-spin relaxation (µSR) experiments. Magnetoresistance measurements reveal a negative longitudinal magnetoresistance (LMR), which scales as B2, while Hall-effect results indicate a predominant contribution from Weyl fermions with a hole-type charge. Magnetic susceptibility and µSR measurements indicate the lack of any intrinsic spontaneous magnetic moments down to base temperature. Finally, the NMR results can be modeled by a two-component effective Hamiltonian, which reproduces well the temperature-dependent Cu63 NMR (T1T)−1 factor, shown to scale as T2 below 100 K and as T1 above 100 K. Overall, we find that the extremely low concentration (1017cm−3) of carriers in CuTlSe2 originates from an ideal nonmagnetic Weyl semimetallic state, persisting up to a thermal excitation energy of 9 meV (100 K), above which trivial electronic bands close to EF take over. Our findings highlight CuTlSe2 as a new member of the intriguing class of Weyl semimetals. Published by the American Physical Society 2024

Engineering the electronic and magnetic properties of monolayer TiS[formula omitted] through systematic transition-metal doping

Despite substantial interest, most of the two-dimensional (2D) materials are not magnetic in their pristine form. Several standard approaches, such as adsorption of atoms, introduction of point defects, and edge engineering, have been developed to induce magnetism in two-dimensional materials. In this way, we investigate the electronic and magnetic properties of monolayer TiS2 doped with 3d transition metals (TMs) atoms in both octahedral 1T and trigonal prismatic 1H structures using first-principles calculations. In its pristine form, TiS2 is a non-magnetic semiconductor. The bands near the Fermi energy primarily exhibit d orbital characters, and due to the presence of ideal octahedral and trigonal arrangements, they are well separated from other bands with p character. Upon substituting 3d-TM atoms in both structures, a variety of electronic and magnetic phases emerge, including magnetic semiconductor, magnetic half-metal, and magnetic metal. Chromium exhibits the largest magnetic moment in both the 1T and 1H structures. The 1T structure shows a slightly higher magnetic moment of 3.4 μB compared to the 1H structure 3.1 μB, attributed to the distorted octahedral structure of the 1T structure. Unlike pristine TiS2, the deficiency in saturation of neighboring S atoms in the presence of impurities leads to the proximity of energy levels of d and p states, resulting in unexpectedly sizeable magnetic moments. Another interesting case is Cobalt, which leads to a magnetic moment of approximately 0.8 μB in the 1H structure, while the Co exhibits a non-magnetic state in the 1H structure. These materials demonstrate a high degree of tunability and can be optimized for various magnetic applications.

Dynamics of magnetization growth and relaxation in ferrofluids.

The dynamics of the growth and relaxation of the magnetization in ferrofluids are determined using theory based on the Fokker-Planck-Brown equation, and Brownian-dynamics simulations. Magnetization growth starting from an equilibrium nonmagnetized state in zero field, and following an instantaneous application of a uniform field of arbitrary strength, is studied with and without interparticle interactions. Similarly, magnetization relaxation is studied starting from an equilibrium magnetized state in a field of arbitrary strength, and following instantaneous removal of the field. In all cases, the dynamics are studied in terms of the time-dependent magnetization m(t). The field strength is described by the Langevin parameter α, the strength of the interparticle interactions is described by the Langevin susceptibility χ_{L}, and the individual particles undergo Brownian rotation with time τ_{B}. For noninteracting particles, the average growth time decreases with increasing α due to the torque exerted by the field, while the average relaxation time stays constant at τ_{B}; with vanishingly weak fields, the timescales coincide. The same basic picture emerges for interacting particles, but the weak-field timescales are larger due to collective particle motions, and the average relaxation time exhibits a weak, nonmonotonic field dependence. A comparison between theoretical and simulation results is excellent for noninteracting particles. For interacting particles with χ_{L}=1 and 2, theory and simulations are in qualitative agreement, but there are quantitative deviations, particularly in the weak-field regime, for reasons that are connected with the description of interactions using effective fields.

Vanadium embedded in monolayer silicene: Energetics and proximity-induced magnetism

Using the density-functional theory approach, including Hubbard U correction, we investigate the defect structures consisting of vanadium (V) atoms embedded in a monolayer silicene. Specifically, we consider V–V atom pairs in antiferromagnetic (AFM), ferromagnetic (FM), and non-magnetic states, which are embedded in substitutional and interstitial sites. We determine the ground-state structures, formation and binding energies, electronic structures, induced magnetization, as well as the spin-exchange coupling between the V–V pair. For the substitutional vanadium atom pair, the stability of the AFM and FM spin configurations depends on the sublattice sites in which the V atoms are sited. When the V pair is located on a similar sublattice site type, the AFM spin alignment is more energetically favored, whereas when the pair is located in a different sublattice site, the FM interactions are more stable. However, the relative stability of the AFM or FM configurations changes rapidly as the separation between the V pair increases. Regarding the interstitial-hole V–V pair configurations, the most stable structure is when the pair is at the nearest-neighbor hole sites and is in an FM alignment. Also, at larger separations, the AFM or FM hole configurations are approximately degenerate in energy. Furthermore, we elucidate on the Ruderman–Kittel–Kasuya–Yosida, direct-exchange, and the superexchange interaction mechanisms in the vanadium-embedded silicene. In addition, we estimate a Curie temperature (Tc) of up to ∼500 K for a silicene structure containing a V pair in the FM spin alignment. Such a high Tc, in addition to the stability of the material, suggests that vanadium-embedded silicene is a potential candidate material for spintronic device applications.

Exchange bias in heterostructures combining magnetic topological insulator MnBi2Te4 and metallic ferromagnet Fe3GeTe2

Introducing magnetism into topological insulators enables exotic phenomena such as quantum anomalous Hall effect. By fabricating van der Waals (vdW) heterostructures using layered magnetic materials, we can not only induce a gap in the non-magnetic topological surface states through magnetic proximity but also further manipulate the magnetic properties of magnetic topological insulators. However, the scarcity of 2D ferromagnetic insulator materials limits the fabrication of such heterostructures. Here, we demonstrate the vdW heterostructure devices comprising metal ferromagnetic Fe3GeTe2 nanoflakes and few-layer antiferromagnetic topological insulator MnBi2Te4 separated by an insulating hexagonal-boron nitride spacer. These devices exhibit significant exchange bias with the exchange bias field of over 100 mT under certain conditions. Our results prove that besides magnetic insulators, metallic magnets can also effectively adjust the magnetic properties of topological insulators, thereby inspiring diverse configurations of the heterostructures between topological insulators and magnetic materials.

Impact of quantum point defects on the electronic and optical properties of NbOX[formula omitted] (X: Cl, Br, I) monolayers

Monolayer niobium oxychloride (NbOCl2), synthesized as reported in Guo et al. (2023), exhibits potential as a quantum light source. Our density functional theory (DFT) study assesses niobium oxyhalide monolayers (NbOX2, X = Cl, Br, I), focusing on quantum point defects’ impact on electronic behavior. Vacancy-induced magnetism is observed in these monolayers; oxygen and niobium vacancies trigger magnetism, contrasting with non-magnetic halogen vacancies. The energy difference between magnetic and non-magnetic states is contingent on vacancy type and halogen mass, with oxygen vacancies showing an energy increase and niobium vacancies a decrease as halogen mass rises. Doping effects are notable; halogen and oxygen vacancies result in n-type doping, while niobium vacancies lead to p-type. In the NbOI2 monolayer, the Nb+1 vacancy is found to be more stable than the neutral vacancy. Conversely, for other charge states and vacancies, the neutral state remains the most stable. Magnetization is significantly enhanced by oxygen and halogen bivacancies, with spin energy difference and magnetization scaling with the halogen’s atomic number. The optical spectrum analysis shows that defects can extend absorption into the infrared, with anisotropic optical properties dependent on light polarization direction. These findings highlight the tunability of niobium oxyhalide monolayers for quantum technology applications, emphasizing the role of defects in modulating electronic and optical characteristics.

Probing the structural, magneto-electronic, thermophysical, and thermoelectric properties of vanadium-based V2MnZ (Z = As, Ga) Heusler alloy: a computational assessment

The structural, magneto-electronic, thermophysical and thermoelectric properties of vanadium-based V2MnZ (Z = As, Ga) alloys have been investigated using density functional theory simulation scheme and semiclassical Boltzmann transport methods. First of all, the structural characterization has been performed in ferromagnetic and non-magnetic states which signifies that both the alloys crystallized in C1b type structure with space group F-43m. We also computed the various thermodynamical parameters such as heat capacity (Cv), Debye temperature (θ D), and grüneisen parameter (γ) of these materials, with the help of quasi-harmonic approximation (QHA) at pressures ranging from 0 to 20 GPa and temperatures ranging from 0 to 900 K. We have used the Boltzmann transport theory with the constant relaxation approximation as a basis for calculating various thermoelectric coefficients such as the Seebeck coefficient, power factor, total thermal conductivity and figure of merit. The efficient half-metallicity and thermoelectric responses contribute to spintronics and green energy harvesting technology.

Mechanical, magnetic, and electronic characteristics of Sm-based chalcogenides for spintronics and device applications

To comprehend the mechanical, electronic, and magnetic properties of chalcogenides HgSm2S/Se4, a DFT-oriented thorough investigation is carried out. The elastic constants and spin-dependent electrical characteristics are determined by using the PBEsol-GGA functional and (mBJ) potential correspondingly. Through optimization, a sufficient amount of energy is discharged by the FM state as compared to nonmagnetic states. By investigating Born stability criteria and formation energy, the structural stabilities of both spinels are verified. The calculated Poisson's and Pugh's ratios showed that both spinels are ductile. The estimation of Curie temperature has supported the existence of a ferromagnetic nature at room temperature. Moreover, the presence of ferromagnetism in both spinels is confirmed by spin-oriented electrical characteristics, owing to the coupling between component states associated with Sm and S/Se.

Ionic control of magnetism in all-solid-state CoOx/yttria-stabilized zirconia heterostructures

Magneto-ionic gating, a procedure that enables the modulation of materials' magnetic properties by voltage-driven ion motion, offers alternative perspectives for emerging low-power magnetic storage and spintronic applications. Most previous studies in all-solid-state magneto-ionic systems have focused on the control of interfacial magnetism of ultrathin (i.e., 1–3 nm) magnetic films, taking advantage of an adjacent ionic conducting oxide, usually GdOx or HfOx, that transports functional ionic species (e.g., H+ or O2−). Here, we report on room-temperature OFF–ON ferromagnetism by solid-state magneto-ionics in relatively thick (25 nm) patterned CoOx films grown on an yttria-stabilized zirconia (YSZ) layer, which acts as a dielectric to hold electric field and as an O2− ion reservoir. Upon negatively biasing, O2− ions from the CoOx tend to migrate toward the YSZ gate electrode, leading to the gradual generation of magnetization (i.e., OFF-to-ON switching of a ferromagnetic state). X-ray absorption and magnetic circular dichroism studies reveal subtle changes in the electronic/chemical characteristics, responsible for the induced magnetoelectric effects in such all-oxide heterostructures. Recovery of the initial (virtually non-magnetic) state is achieved by application of a positive voltage. The study may guide future development of all-solid-state low-power CMOS-compatible magneto-ionic devices.

A comprehensive theoretical analysis on structural, electronic, optical, and mechanical properties of Sr2VRuO6 compound

In this paper, using the FP-LAPW technique as implemented in the Wien2k code, we have studied the structural, electronic, optical, and mechanical properties of strontium-based compound Sr2VRuO6. In this study, we explore the properties of Sr2VRuO6 using various approximations. We present the total energy versus energy, employing the Wu-Cohen-Generalized Gradients Approximation (WC-GGA) for both nonmagnetic and ferromagnetic states. To determine the stability of this material in cubic structure, the tolerance factor (t) and octahedral factor (μ) have been calculated. The lattice parameters of Sr2VRuO6 were determined, and subsequent calculations yielded the compressive modulus, Young's modulus, shear modulus, and Poisson's ratio in both two and three dimensions. Analyzing the band structure of Sr2VRuO6 within the mBJ-GGA approximation the half metallic character is observed with an indirect bandgap of 2.34 eV. In addition, the total and partial density of states, as well as charge density maps for Sr2VRuO6 have been calculated. Furthermore, we investigated the real and imaginary parts of the dielectric function as functions of energy for Sr2VRuO6. Additionally, the study delved into the variation of the refractive index, absorption coefficient, reflectivity, and energy loss with respect to energy for Sr2VRuO6.

Comprehensive investigation of half Heusler alloy: Unveiling structural, electronic, magnetic, mechanical, thermodynamic, and transport properties

This study employs density functional theory (DFT) using Wien2k to comprehensively analyze the essential properties of two half-Heusler alloys, KCrSi and KCrGe. Our findings demonstrate that the ferromagnetic Type 2 configuration exhibits superior stability over non-magnetic and antiferromagnetic states for all KCrZ (Z = Si, Ge) alloys. These alloys exhibit complete spin polarization and half-metallic character, with calculated magnetic moments of 3 μB for both KCrSi and KCrGe. The Curie temperature (TC) is determined using the mean field approximation. Mechanical stability is assessed through second-order elastic constants (SOECs), and electronic properties are analyzed using local spin density approximation (LSDA), Perdew-Burke Generalized Gradient Approximation (PBE-GGA), and Tran-Blaha modified Becke-Johnson (TB-mBJ) schemes, confirming the retention of the half-metallic nature. The negative enthalpy of formation (ΔH) suggests material stability. The use of semi-classical Boltzmann theory, incorporated through the sophisticated scheme of BoltzTraP, explores transport coefficients. High pressures and temperature discrepancies in thermodynamics are considered by implementing the quasi-harmonic Debye approximation to illustrate stability. Finally, optical properties are summarized to assess the applicability of this alloy for optoelectronic applications. The overall characteristics of these particular alloys suggest potential applications in sustainable thermoelectric and optoelectronic features.

Prediction of a new 2D Janus monolayer MX2Si2Y2 (M = Mo, W and V; X/Y = N, P; X ≠ Y) from density functional theory

We devised the Janus monolayer MX2A2Y2 (M = Mo, W, V, Nb, Ta, Ti, Zr, Hf and Cr; X/Y = N, P and As; A = Si and Ge) and systematically investigated the structural parameters, phonon vibrations, thermal stability, the electronic and mechanical properties. Among the 26 systems, there are six stable Janus monolayers at room temperature: MoN2Si2P2, WN2Si2P2, VN2Si2P2, MoP2Si2N2, WP2Si2N2, CrN2Si2P2. Intriguingly, the MoP2Si2N2 and WP2Si2N2 show non-magnetic semiconductor properties. The MoN2Si2P2 and WN2Si2P2 demonstrate non-magnetic metallic ground states. The VN2Si2P2 and CrN2Si2P2 are magnetic metal with magnetic moments of 1.24 μB and 0.53 μB. Furthermore, the elastic constants of the MSi2N4 and five Janus monolayer MX2Si2Y2 (M = Mo, W and V; X/Y = N, P) meet the stability criteria, indicating they are mechanically stable. The in-plane stiffness of the MX2Si2Y2 increases with the increase of the number of metal atoms and are greatly reduced, compared with the corresponding MSi2N4. In addition, according to Poisson's ratio, the MN2Si2P2 with metallic characteristics are ductile, whereas the MP2Si2N2 with semiconductor characteristic are brittle. In short, the Janus monolayer MX2Si2Y2 enriches the family members of 2D materials. The rich electronic and mechanical properties make the MX2Si2Y2 have high application prospects for future novel mechanical electronic device applications.

Nonmagnetic Ground State in RuO_{2} Revealed by Muon Spin Rotation.

The magnetic ground state of single crystalline RuO_{2} was investigated by the muon spin rotation and relaxation (μSR) experiment. The spin precession signal due to the spontaneous internal magnetic field B_{loc}, which is expected in the magnetically ordered phase, was not observed in the temperature range 5-400K. Muon sites were evaluated by first-principles calculations using dilute hydrogen simulating muon as pseudohydrogen, and B_{loc} was simulated for the antiferromagnetic structures with a Ru magnetic moment |m_{Ru}|≈0.05μ_{B} suggested from diffraction experiments. As a result, the possibility was ruled out that muons are localized at sites where B_{loc} accidentally cancels. Conversely, assuming that the slow relaxation observed in μSR spectra was part of the precession signal, the upper limit for the magnitude of |m_{Ru}| was estimated to be 4.8(2)×10^{-4}μ_{B}, which is significantly less than 0.05μ_{B}. These results indicate that the antiferromagnetic order, as reported, is unlikely to exist in the bulk crystal.

Challenges for density functional theory in simulating metal-metal singlet bonding: A case study of dimerized VO2.

VO2 is renowned for its electric transition from an insulating monoclinic (M1) phase, characterized by V-V dimerized structures, to a metallic rutile (R) phase above 340K. This transition is accompanied by a magnetic change: the M1 phase exhibits a non-magnetic spin-singlet state, while the R phase exhibits a state with local magnetic moments. Simultaneous simulation of the structural, electric, and magnetic properties of this compound is of fundamental importance, but the M1 phase alone has posed a significant challenge to the density functional theory (DFT). In this study, we show none of the commonly used DFT functionals, including those combined with on-site Hubbard U to treat 3d electrons better, can accurately predict the V-V dimer length. The spin-restricted method tends to overestimate the strength of the V-V bonds, resulting in a small V-V bond length. Conversely, the spin-symmetry-breaking method exhibits the opposite trends. Each of these two bond-calculation methods underscores one of the two contentious mechanisms, i.e., Peierls lattice distortion or Mott localization due to electron-electron repulsion, involved in the metal-insulator transition in VO2. To elucidate the challenges encountered in DFT, we also employ an effective Hamiltonian that integrates one-dimensional magnetic sites, thereby revealing the inherent difficulties linked with the DFT computations.

Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor

Multiferroic van der Waals (vdW) heterostructures offer an exciting route toward the nanoelectronics and spintronics device technology. How to realize the mutual regulation between ferroelectric and magnetic materials has attracted extensive research. In this work, based on the density functional theory, we simulate a vdW multiferroic heterostructure based on the bipolar magnetic semiconductor material graphone and ferroelectric monolayer In2Te3 and further investigate its electronic properties. We find that direct contact between In2Te3 and graphone induces a transition in graphone from a ferromagnetic state to a non-magnetic state. Fortunately, the magnetic properties of graphone are preserved by using graphene as an intercalation layer, and the graphone monolayer changes from its original semiconductor to a half-metal in the graphone/graphene/In2Te3 vdW heterostructure for P↓ state. Furthermore, by adjusting the layer spacing of the heterostructure, the spin polarization states of graphone at the Fermi level (EF) are regulated between spin-up (S↑) and spin-down (S↓) with the reversal of ferroelectric polarization states. Our results not only provide a promising way to realize the half-metallicity in 2D magnetic materials but also computationally predict the ferroelectric control of the spin polarization state, which has great application potential in the next-generation nonvolatile electrically controlled spintronic devices.

Magnetism and finite-temperature effects in UZr2: A density functional theory analysis

The structure and the thermophysical properties of δ-UZr2 are investigated using 0 K density functional theory and ab initio molecular dynamics (AIMD). Modeling the true paramagnetic state of this intermetallic compound has been challenging using first-principles calculations. For the first time, we find that the generalized gradient approximation method without applying an on-site Coulomb interaction term (Hubbard U) can result in a ground state that is antiferromagnetic (AFM). We believe that this weak AFM ground state is the closest to the real paramagnetic state. We found that structure optimization at finite temperatures using AIMD is necessary to achieve this ground state instead of the non-magnetic and ferromagnetic states previously reported in the literature. Our findings indicate that applying the Hubbard U on uranium f-orbitals in this metallic system is unnecessary and not recommended, as it leads to a large overestimation of the volume and introduces an unphysical strong spin polarization. Our approach results in atomic volume, thermal expansion, and heat capacities that have strong agreement with experiments.

Recent Developments of Nontraditional Single-Molecule Toroics.

Single-molecule toroics (SMTs), defined as a type of molecules with toroidal arrangement of magnetic moment associated with bi-stable non-magnetic ground states, are promising candidates for high-density information storage and the development of molecule based multiferroic materials with linear magneto-electric coupling and multiferroic behavior. The design and synthesis of SMTs by arranging the magnetic anisotropy axis in a circular pattern at the molecular level have been of great interest to scientists for last two decades since the first detection of the SMT behavior in the seminal Dy3 molecules. DyIII ion has long been the ideal candidate for constructing SMTs due to its Kramer ion nature as well as high anisotropy. Nevertheless, other LnIII ions such as TbIII and HoIII ions, as well as some paramagnetic transition metal ions, have also been used to construct many nontraditional SMTs. Therefore, we review the progress in the studies of SMTs based on the nontraditional perspective, ranging from the 3D topological to 1D&2D&3D polymeric SMTs, and 3d-4f to non Dy-based SMTs. We hope the understanding we provide about nontraditional SMTs will be helpful in designing novel SMTs.