Nonmagnetic Metal Spacer Research Articles

Improvements in thermoelectric features by resonant-tunneling magnetic tunnel junctions with β-Ga2O3 semiconductor

A study was conducted to investigate thermoelectric effects (TEEs) in resonant-tunneling magnetic tunnel junctions (RTMTJs) featuring wide-bandgap semiconductors such as ZnO and β-Ga2O3, along with a non-magnetic metal spacer. The transmission function was determined using the non-equilibrium Green’s function method within a tight-binding model. Significant enhancements in TEEs were observed for the β-Ga2O3 semiconductor compared to other materials, indicating its potential applicability in the emerging field of β-Ga2O3 spincaloritronics.

Magnetization switching driven by spin current in a T-type ferromagnetic trilayer

The T-type CoFeB/spacer/CoFeB structure is a promising candidate for the development of perpendicular spin–orbit torque (SOT) magnetic random-access memory and other SOT devices. It consists of an in-plane magnetized layer, a perpendicularly magnetized layer, and a non-magnetic metal spacer that induces interlayer exchange coupling. By engineering the W spacer, this system achieves field-free SOT switching with a nearly 100% switching ratio. Furthermore, it realizes a high exchange coupling field of 255 Oe using a relatively thinner spacer thickness, enhancing the reliability and energy efficiency of SOT switching. Measurement of current switching probability suggests that this perpendicular magnetic anisotropy system may enable the implementation of probability-adjustable true random number generators in future applications. The T-type structures with strong interlayer coupling exhibit great potential for spintronic device applications.

First-Principles Studies on Spin-Dependent Transport of Magnetic Junctions with Half-Metallic Heusler Compounds

Two types of magnetoresistance (MR), i.e., tunnel magnetoresistance (TMR) and current perpendicular to plane giant magnetoresistance (CPP-GMR), are theoretically discussed for systems with half-metallic (HFM) Co-based full Heusler compounds. In TMR, the non-collinear spin structure at the Co2MnSi(CMS)/MgO(001) interface that results from thermal spin fluctuations significantly reduced the TMR ratio at room temperature (RT). Enhancement of the exchange stiffness of CMS/MgO was essential to suppress the reduction in TMR at RT. Furthermore, it is proposed that inserting of a B2-CoFe layer between CMS and MgO is a promising way to enhance the interface exchange stiffness constant. In CPP-GMR, the interface spin asymmetry γ in the Valet-Fert model was essential to enhance GMR at RT, because the temperature dependence of γ in experiments was much larger than that of the bulk spin asymmetry β. I showed that the experimental CPP-GMR ratio increases with the decrease in the theoretical resistance-area product RPA, which is roughly consistent with the RP dependence of γ. This means that matching of the conductive channel between HMF and a non-magnetic metallic spacer is a key parameter to enhance γ. These findings will be very important for room temperature spintronics devices applied in future artificial intelligence hardware.

Atomic‐Scale Modulation of Synthetic Magnetic Order in Oxide Superlattices

Atomic-scale precision control of magnetic interactions facilitates a synthetic spin order useful for spintronics, including advanced memory and quantum logic devices. Conventional modulation of synthetic spin order has been limited to metallic heterostructures that exploit Ruderman-Kittel-Kasuya-Yosida interaction through a nonmagnetic metallic spacer; however, they face issues arising from Joule heating and/or electric breakdown. The practical realization and observation of a synthetic spin order across a nonmagnetic insulating spacer will lead to the development of spin-related devices with a completely different concept. Herein, the atomic-scale modulation of the synthetic spiral spin order in oxide superlattices composed of ferromagnetic metal and nonmagnetic insulator layers is reported. The atomically controlled superlattice exhibits an oscillatory magnetic behavior, representing the existence of a spiral spin structure. Depth-sensitive polarized neutron reflectometry evidences modulated spiral spin structures as a function of the nonmagnetic insulator layer thickness. Atomic-scale customization of the spin state can move the field one step further to actual spintronic applications.

Magnetization Reversal and Domain Structures in Perpendicular Synthetic Antiferromagnets Prepared on Rigid and Flexible Substrates

Ferromagnetic (FM) layers separated by nonmagnetic metallic spacer layers can exhibit Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling, which may lead to a stable synthetic antiferromagnetic (SAF) phase. In this article, we have studied magnetization reversal by varying the number of bilayer stacks [Pt/Co] as well as thicknesses of Ir space layer t\(_{Ir}\) on rigid Si(100) and flexible polyimide substrates. The samples with t\(_{Ir}\) = 1.0 nm show a FM coupling, whereas samples with t\(_{Ir}\) = 1.5 nm show an antiferromagnetic (AFM) coupling between the FM layers. At t\(_{Ir}\) = 2.0 nm, it shows a bow-tie shaped hysteresis loop indicating a canting of magnetization at the reversal. Higher anisotropy energy compared to the interlayer exchange coupling (IEC) energy is an indication of the smaller relative angle between the magnetization of lower and upper FM layers. We have also demonstrated the strain-induced modification of IEC as well as magnetization reversal phenomena. The IEC shows a slight decrease upon application of compressive strain and increase upon application of tensile strain, which indicates the potential of SAFs in flexible spintronics.

Bias current dependence of superconducting transition temperature in superconducting spin-valve nanowires

Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A prominent example of an S/F proximity effect is the spin switch effect (SSE) observed in S/F/N/F superconducting spin-valve multilayers, in which the superconducting transition temperature T$_c$ is controlled by the angle $\phi$ between the magnetic moments of the F layers separated by a nonmagnetic metallic spacer N. Here we present an experimental study of SSE in Nb/Co/Cu/Co/CoO$_x$ nanowires measured as a function of bias current flowing in the plane of the layers. These measurements reveal an unexpected dependence of T$_c(\phi)$ on the bias current: T$_c(\pi)$--T$_c(0)$ changes sign with increasing current bias. We attribute the origin of this bias dependence of the SSE to a spin Hall current flowing perpendicular to the plane of the multilayer, which suppresses T$_c$ of the multilayer. The bias dependence of SSE can be important for hybrid F/S devices such as those used in cryogenic memory for superconducting computers as device dimensions are scaled down to the nanometer length scale.

Voltage-Controlled Magnonic Spin Tunneling Junction

We theoretically investigate the effective exchange interaction, $J_\mathrm{eff}$, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the basis of the tight-binding model, we show the voltage and spacer thickness dependences of $J_\mathrm{eff}$, and its contorollability is demonstrated. We also propose a new magnonic device with the functions of both field effect transistor and non-volatile memory.

Spin-torque quantization and microwave sensitivity of a nano-sized spin diode

Rectification of microwave signal by the spin-torque diode is very promising for its practical applications in microwave imaging. This is due to a very high sensitivity of magnetic tunnel junction under the bias current, which was previously demonstrated in a number of works [1-3]. The decreasing of cross-sectional area of the spin-torque diode up to the nano-sized dimensions below 10 nm allows one to reach high sensitivity without any bias current. Transverse quantization of electron states in the magnetic nanowire based on nano-sized metallic spin valves and magnetic tunnel junctions can create an additional impact not only on the magnetoresistance, but also on the spin-transfer torque in such structures. In this work we present an analysis of the quantization effect of conductance and spin-transfer torques on the microwave sensitivity of nano-sized spin-torque diodes during the reduction of its cross-sectional area. It was found that the magnetoresistance values up to 130 % can be achieved in a magnetic nanowire containing spin-valve diode with the nonmagnetic metal spacer. As a result, the maximum microwave sensitivity of spin-torque diodes based on these structures can be increased several times that opens the way for the further development of highly sensitive microwave detectors.

Spin-Dependent Thermoelectric Effects in Double-Barrier Magnetic Tunnel Junctions with a Non-magnetic Metal Spacer

Spin-dependent thermoelectric (TE) effects are studied in MgO-based double-barrier magnetic tunnel junctions with a non-magnetic metal spacer (DBMTJs-NM) in the linear response regime. Using non-equilibrium Green’s function (NEGF) formalism, the results show resonant peaks at specific thicknesses of the NM spacer because of the resonant tunneling effect through the DBMTJs-NM. Effects of average temperature and magnetization alignment are also described. Therefore, thermally charge and spin voltage lead to large spin-dependent TE effects by the DBMTJs-NM structures.

Enhancement of Thermopower by Structural Asymmetry in Double-Barrier Tunnel Junctions

Thermopower is studied in double-barrier magnetic tunnel junctions (DBMTJs) with a non-magnetic metal (NM) spacer by considering structural asymmetry—related to the different thicknesses of the MgO insulators—in the linear response regime. Using non-equilibrium Green’s function (NEGF) formalism, it is found that the thermopower is larger in the case with thicker left insulator than the other cases which is related to the voltage drop within the insulator layer. The thermopower has shown its maximum value as large as S = 482μ V/K in the anti-parallel configuration of the magnetizations and T = 300K. Therefore, it is possible to achieve the large thermopower in the thermoelectric devices based on MTJs.

Resonant enhancement of thermal spin-transfer torque in asymmetric double-barrier tunnel junctions

Charge current and thermal spin-transfer torque (TSTT) in asymmetric double-barrier magnetic tunnel junctions (DBMTJs) with a non-magnetic metal (NM) spacer as CoFeB/MgO/NM/MgO/LSMO are studied by non-equilibrium Green’s function (NEGF) formalism. It is found that the results show oscillatory behavior with an increase of the NM spacer thickness due to the resonant tunneling effect through the DBMTJs structures. About the dependence of the temperature difference and angle between the magnetizations, the charge current and TSTT are larger at the specific thicknesses (resonant positions) of the NM spacer than the others. The results also illustrate a magnitude enhancement for asymmetric DBMTJs compared with asymmetric single-barrier MTJs (SBMTJs). Therefore, it is possible to achieve a large TSTT for magnetization dynamics by new asymmetric DBMTJs.

Temperature Gradient Effects on Spin Torque in Double Barrier Magnetic Tunnel Junctions with a Non-magnetic Metal Spacer

Temperature gradient effects on spin torque (ST) are studied in MgO-based double-barrier magnetic tunnel junctions (DBMTJs) with a non-magnetic metal (NM) spacer. Using non-equilibrium Green’s function (NEGF) formalism, it is found that the thermal ST (TST) show oscillatory behavior with an increase of theNM spacer thickness. The results also show a magnitude enhancement of the TST in a DBMTJ compared with a single-barrier MTJ (SBMTJ). Such behavior is related to the existence of the quantum well states inside the NM spacer and resonant tunneling effect. Therefore, a faster magnetization switching is possible by TST in a DBMTJ without any bias voltage.

Invariance of the magnetic behavior and AMI in ferromagnetic biphase films with distinct non-magnetic metallic spacers

We investigate the quasi-static magnetic, magnetotransport, and dynamic magnetic properties in ferromagnetic biphase films with distinct non-magnetic metallic spacer layers. We observe that the nature of the non-magnetic metallic spacer material does not have significant influence on the overall biphase magnetic behavior, and, consequently, on the magnetotransport and dynamic magnetic responses. We focus on the magnetoimpedance effect and verify that the films present asymmetric magnetoimpedance effect. Moreover, we explore the possibility of tuning the linear region of the magnetoimpedance curves around zero magnetic field by varying the probe current frequency in order to achieve higher sensitivity values. The invariance of the magnetic behavior and the asymmetric magnetoimpedance effect in ferromagnetic biphase films with distinct non-magnetic metallic spacers place them as promising candidates for probe element and open possibilities to the development of lower-cost high sensitivity linear magnetic field sensor devices.

Enhancement of thermal spin transfer torque by double-barrier magnetic tunnel junctions with a nonmagnetic metal spacer

Enhancement of thermal spin transfer torque in a double-barrier magnetic tunnel junction with a nonmagnetic-metal spacer is proposed in this study. The results indicate that, given the same temperature difference, thermal spin transfer torque and charge current density for the proposed double barrier magnetic tunnel junction configuration can be approximately twice as much as that of the traditional single-barrier magnetic tunnel junctions. This enhancement can be attributed to the resonant tunneling mechanism in the double-barrier structure.

Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed to the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.

Resonant and non-resonant microwave absorption as a probe of the magnetic dynamics and switching in spin valves

We use the resonant and non-resonant microwave absorption to probe the dynamic and static magnetic parameters of weakly coupled spin valves. The sample series include spin valve structures with varying thickness of the non-magnetic metallic spacer and reference samples comprised only a free or fixed magnetic layer. Beside the common resonance absorption peaks, the observed microwave spectra present step-like features with hysteretic behavior. The latter effect is a direct manifestation of the interlayer coupling between the ferromagnetic layers and provides two static magnetic parameters, the switching field and coercivity of the fixed layer. The analysis of the microwave absorption spectra under in-plane rotation of the applied magnetic field at different spacer thicknesses permits a deeper insight in the magnetic interactions in this system as compared to the conventional magnetometry. We combine the standard Smit-Beljers formalism for the angular dependence of the resonance fields with a Landau-Lifshitz-Gilbert dynamics extended to describe in detail the intensity of microwave absorption in the spin valves. In this way, we extract a set of parameters for each layer including the effective magnetization and anisotropy, exchange bias and interlayer coupling, as well as Gilbert damping. The model reproduces well the experimental findings, both qualitatively and quantitatively, and the estimated parameters are in a reasonable agreement with the values known from the literature. The proposed theoretical treatment can be adopted for other multilayered dynamic systems as, e.g., spin-torque oscillators.

Ferromagnetic resonance driven by spin transfer torque

We study spin–torque-driven ferromagnetic resonance (ST-FMR) in point contacts. Point contacts as small as a few nanometers in size are used to inject microwave currents into F/N/F spin valves where two ferromagnetic (F) layers are separated by a nonmagnetic (N) metal spacer. High densities of injected currents produce the spin-transfer torque on magnetic moments and drive FMR in the F-layers. The resonance is detected electrically when a small rectified dc voltage appears across the point contact. Here we focus on the origin of this rectified signal and study ST-FMR in point contacts to spin valves with different ferromagnets (Py and Co) and single ferromagnetic (Py) films, as well as in spin-valve wires patterned by electron beam lithography. We find that this voltage can be explained by the resistance variations which originate from giant magnetoresistance in point contacts to spin valves and involve effects of anisotropic magnetoresistance and extraordinary Hall effect on the propagation of microwave currents in continuous F-films and microwires.

Spin-torque-driven ferromagnetic resonance in point contacts

We demonstrate the technique of spin-torque-driven ferromagnetic resonance (ST-FMR) in point contacts, which enables FMR studies in sample volumes as small as a few cubic nanometers. In our experiments, we use point contacts ∼10 nm in size to inject both dc and microwave currents into F/N/F/AFM exchange-biased spin valves where two ferromagnetic (F) layers are separated by a nonmagnetic (N) metal spacer and one of the Fs is pinned by an adjacent antiferromagnetic (AFM) layer. High current densities produce the spin-transfer torque on magnetic moments in a small contact region and drive it to resonance at appropriate frequency of the applied microwaves. The resulting magnetodynamics are detected electrically via a small rectified dc voltage, which appears across the contact at resonance. The width of the resonance varies linearly with the applied dc bias as expected for spin transfer in spin valves. Potentially, the point-contact technique extends the applicability of ST-FMR to higher/lower frequencies, smaller sample volumes, and a broader range of materials.

Ab initiodescription of spin pumps and spin sinks in magnetic double layers with in-plane coupling

For magnetic double layers separated by a nonmagnetic metallic spacer the precession of the magnetization in only one magnetic slab (``spin pump'') and in both of them (``spin sink'') is described using the fully relativistic spin-polarized screened Korringa-Kohn-Rostocker method. It is found that both semiaxes of the ellipses that form the base planes of precessional cones can be identified with particular anisotropy energies. Slopes along particular paths of the obtained free energy hypersurfaces are then used to estimate in terms of the Landau-Lifshitz-Gilbert equation the minimal times to move from a chosen initial state to a particular final state. Furthermore, fully relativistic spin-polarized calculations by means of the Kubo equation of the corresponding zz-like elements of the conductivity tensor show that the current along the surface normal is bigger for ``spin pumps'' than for ``spin sinks.'' For moderately small external fields the time scale for the individual processes is in the femtoregime.

Spin Polarized Transport through Structures Consist of the Ferromagnetic Semiconductor in Presence of a Inhomogeneous Magnetic Field

The spin-polarized transport is investigated in a magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer placed in distance above the two dimensional electron gas (2DEG) in presence of an inhomogeneous external modulated magnetic field and a perpendicular wave vector dependent effective potential. Based on the transfer matrix method and the nearly-free-electron approximation the dependence of the conductance and spin polarization on the Fermi energy of the electrons are studied theoretically the. strong oscillations with large amplitude investigated in spin polarization in terms of the Fermi energy due to the inhomogeneous magnetic field. The conductance in terms of the Fermi energy shows no oscillation in low energy but has a strong pick in middle region. this results may be useful for the development of spin electronic devices based on coherent transport, or may be used as a tunable spin-filter.