Ni Under-bump Metallization Research Articles

Effect of Electromigration-Induced Joule Heating on the Reliability of Sn-Ag Microbump with Different UBM Structures

The effect of current stress-induced Joule heating on two different under-bump metallization (UBM) structures in Sn-Ag microbumps was investigated with current stressing at 150°C and a current density of 5 &!thinsp;× 104 A/cm2. Both Ni UBM and Cu UBM configuration microbump structures underwent extensive electromigration (EM) testing, with results revealing a longer lifetime with the Cu UBM configuration than the Ni UBM structure. The observed EM failure mechanism in the Ni UBM configuration was identified as a void formation within the bump interconnected Al trace and not due to damage accumulation inside the microbump structure. The intermetallic compound developed inside the microbump was formed and maintained its stability throughout the current stressing period. To identify the main driving force of damage accumulation in the Al trace, the current density and temperature distributions in the Sn-Ag microbumps were analyzed numerically via the finite element method. The simulation results showed higher Joule heating with the Ni UBM than the Cu UBM microbump configuration, along with the bump geometrical contribution of add-on higher Joule heating in the Ni UBM microbump structure.

Study of the Interfacial Reaction between the Sn-3.5Ag Solder and Electroless Ni-P Metallization

This work summarizes the interfacial reaction between lead-free solder Sn-3.5Ag and electrolessly plated Ni-P metallization in terms of morphology and growth kinetics of the intermetallic compounds (IMC). Comparison with pure Ni metallization is made in order to clarify the role of P in the solder reaction. During reflow, the IMCs formed with the Ni-P under-bump metallization (UBM) exist in chunky crystal blocks and small crystal agglomerates, while the ones with the sputtered Ni UBM exhibit uniformly scallop grains with faceted surfaces. The IMC thickness increases with reflow time following approximately a t^sup 1/3^ power law for both systems. The IMC growth rate is higher with the Ni-P UBM than the Ni UBM. The thickness of the Ni^sub 3^Sn^sub 4^ layer increases linearly with the square root of thermal aging time, indicating that the growth of the IMCs is a diffusion-controlled process. The activation energy for Ni^sub 3^Sn^sub 4^ growth in solid-state reaction is found to be 110 kJ/mol and 91 kJ/mol for the Ni-P and sputtered Ni UBMs, respectively. Kirkendall voids are detected inside the Ni^sub 3^P layer in the Sn-3.5AgTNi-P system. No such voids are found in the Sn-3.5AgTNi system.

Mode II electromigration failure mechanism in Sn-based Pb-free solder joints with Ni under-bump metallization

Early electromigration (EM) failure mechanism, also known as Mode II EM failure in Sn-based Pb-free solder joints with Ni under-bump metallization (UBM) is studied. A numerical model was built to incorporate interdiffusion and EM, and to investigate the effect of Sn crystal orientation. Results show that when the c axis of Sn has a close alignment to the current direction, intermetallic compound (IMC) growth is enhanced by both EM and extremely fast interstitial diffusion of Ni in the solder. The combined process results in IMC dissolution from the cathode side of the solder joint and causes EM failure by UBM depletion. Theoretical predictions are consistent with experimental observations.

Comparison of thermomigration behaviors between Pb-free flip chip solder joints and microbumps in three dimensional integrated circuits: Bump height effect

Packaging technology is currently transition from flip chip technology to three dimensional integrated circuits (3D ICs) to meet the requirements of consumer electronic products. Compared to flip chip technology, the dimension of microbumps in 3D ICs is shrunk by a factor of 10. In this study, the behaviors of thermomigration in Pb-free solders of flip chip and 3D ICs are presented. When the bump height is 100 μm in the flip chip samples, the Sn protrusion was observed at the hot end and voids formation at the cold end. However, when the bump height is reduced to 5.8 μm in the 3D IC samples, no significant microstructural evolution of Sn was found; instead, the dissolution of Ni under-bump metallization at hot end was observed. We propose that discrepancy between flip chip solder joints and 3D IC microbumps is mainly attributed to the effect of back stress and the presence of thicker Ni under-bump metallization in the 3D IC packaging. Moreover, the critical temperature gradient in terms of different bump heights is discussed, showing below which there will be no net effect of thermomigration of Sn.

Current-induced interfacial reactions in Ni/Sn–3Ag–0.5Cu/Au/Pd(P)/Ni–P flip chip interconnect

Abstract

Low-cost bump bonding activities at CERN

Conventional bumping processes used in the fabrication of hybrid pixel detectors for High Energy Physics (HEP) experiments use electroplating for Under Bump Metallization (UBM) and solder bump deposition. This process is laborious, involves time consuming photolithography and can only be performed using whole wafers. Electroplating has been found to be expensive when used for the low volumes which are typical of HEP experiments. In the low-cost bump bonding development work, electroless deposition technology of UBM is studied as an alternative to the electroplating process in the bump size / pitch window beginning from 20 μm / 50 μm. Electroless UBM deposition used in combination with solder transfer techniques has the potential to significantly lower the cost of wafer bumping without requiring increased wafer volumes.A test vehicle design of sensor and readout chip, having daisy chains and Kelvin bump structures, was created to characterize the flip chip process with electroless UBM. Two batches of test vehicle wafers were manufactured with different bump pad metallization. Batch #1 had AlSi(1%) metallization, which is similar to the one used on sensor wafers, and Batch #2 had AlSi(2%)Cu(1%) metallization, which is very similar to the one used on readout wafers. Electroless UBMs were deposited on both wafer batches. In addition, electroplated Ni UBM and SnPb solder bumps were grown on the test sensor wafers. Test assemblies were made by flip chip bonding the solder-bumped test sensors against the test readout chips with electroless UBMs. Electrical yields and individual joint resistances were measured from assemblies, and the results were compared to a well known reference technique based on electroplated solder bumps structures on both chips. The electroless UBMs deposited on AlSi(2%)Cu(1%) metallization showed excellent electrical yields and small tolerances in individual joint resistance. The results from the UBMs deposited on AlSi(1%) metallization were non-uniform and closer inspection revealed micro cracks at aluminum — electroless nickel interface. UBM deposition was also done for Timepix wafers and solder ball placement process was prototyped with 40 μm balls.

Transmission Electron Microscopy Characterization of Ni(V) Metallization Stressed Under High Current Density in Flip Chip Solder Joints

The Ni(V) under bump metallization (UBM) in flip chip solder joints is known to be consumed in a two-stage process during current stressing. The Ni(V) UBM transforms first to the “consumed Ni(V)” state. Then, this consumed Ni(V) transforms to a so-called porous structure. In this study, the details of the consumed Ni(V) and the porous structure were analyzed by transmission electron microscopy. Bright-field images showed that the consumed Ni(V) was a continuous layer without columnar structures and that the porous structure had many voids in the matrix. The compositional analyses showed that V atoms were immobile and trapped in the original Ni(V) layer. Cu and Sn atoms diffused into the original Ni(V) layer, and Ni atoms diffused outward. Selected-area diffraction patterns and high-resolution transmission electron microscopy of the porous structure showed that it was composed of an amorphous matrix with fine crystalline Cu6Sn5 and VSn2 phases.

Measurement of electromigration activation energy in eutectic SnPb and SnAg flip-chip solder joints with Cu and Ni under-bump metallization

Electromigration activation energy is measured by a built-in sensor that detects the real temperature during current stressing. Activation energy can be accurately determined by calibrating the temperature using the temperature coefficient of resistivity of an Al trace. The activation energies for eutectic SnAg and SnPb solder bumps are measured on Cu under-bump metallization (UBM) as 1.06 and 0.87 eV, respectively. The activation energy mainly depends on the formation of Cu–Sn intermetallic compounds. On the other hand, the activation energy for eutectic SnAg solder bumps with Cu–Ni UBM is measured as 0.84 eV, which is mainly related to void formation in the solder.

Electromigration performance of Pb-free solder joints in terms of solder composition and joining path

The electromigration (EM) performance of Pb-free solder joints is investigated in terms of solder composition (Sn-0.5Cu vs. Sn-1.8Ag) and joining path to Cu vs. Ni(P) under bump metallization (UBM). In the double-sided joints of Ni(P)/solder/Cu, the micro-structure of solder joints and the interfacial intermetallic compound (IMC) layers are significantly affected by solder composition and joining path. The as-reflowed microstructure of Sn-0.5Cu joints consists of small columnar grains with thin IMC layers at both UBM interfaces, independent of the joining path, while Sn-1.8Ag joints have a few large grains of low-angle grain boundaries with thick IMC layers when joined first to Ni(P) UBM, but a few 60° twins with thin IMC layers when joined first to Cu UBM. The EM stressing under high current densities at 150°C reveals that Sn-1.8Ag joints have a superior lifetime compared to Sn-0.5Cu joints. In addition, the EM lifetime of Sn-1.8Ag joints reflowed first on Ni(P) UBM is the longest among four groups of the solder joints examined.

Interfacial Reaction Between 95Pb-5Sn Solder Bump and 37Pb-63Sn Presolder in Flip-Chip Solder Joints

Interdiffusion and interfacial reaction of 95Pb-5Sn solder bumps and 37Pb-63Sn presolder in flip-chip solder joints during high-temperature storage were studied. Reaction temperatures included 100°C, 130°C, 150°C, and 175°C. It was found that Cu6Sn5 and Cu3Sn formed on the board side and (Ni,Cu)3Sn4 formed on the chip side after 100 h of aging. After 2000 h of aging at 175°C, the Ni under-bump metallization (UBM) was exhausted. This caused the (Ni,Cu)3Sn4 layer at the chip-side interface to be gradually converted into (Cu0.6Ni0.4)6Sn5. It was also found that the consumption of the Ni UBM was faster than the case where eutectic Sn-Pb solder was used for the entire joint. Nevertheless, the consumption of the Cu on the substrate side was slower than the case where pure eutectic Sn-Pb solder was used for the entire joint.

Reaction Mechanism and Mechanical Properties of the Flip-Chip Sn-3.0Ag-0.5Cu Solder Bump with Cu/Ni-xCu/Ti Underbump Metallization After Various Reflows

Ni underbump metallization (UBM) has been widely used as the diffusion barrier between solder and Cu pads. To retard the fast dissolution rate of Ni UBM, Cu was added into Ni thin films. The Ni-Cu UBM can provide extra Cu to the solders to maintain the Cu6Sn5 intermetallic compound (IMC) at the interface, which can thus significantly decrease the Ni dissolution rate. In this study, the Cu content of the sputtered Cu/Ni-xCu/Ti UBM was varied from 0 wt.% to 20 wt.%. Sn-3Ag-0.5Cu solder was reflowed with Cu/Ni-Cu/Ti UBM one, three, and five times. Reflow and cooling conditions altered the morphology of the IMCs formed at the interface. The amount of (Cu,Ni)6Sn5 increased with increasing Cu content in the Ni-Cu film. The Cu concentration of the intermetallic compound was strongly dependent on the composition of the Ni-Cu films. The results of this study suggest that Cu-rich Ni-xCu UBM can be used to suppress interfacial spalling and improve shear strength and pull strength of solder joints.

Inhomogeneous Consumption of the Electroless Ni-P Layer at the Solder Joint Formed with Sn-3.5Ag-0.7Cu

This report investigates the phenomenon of interfacial serration at the joint between Sn-3.5Ag-0.7Cu solder (SAC) and electroless Ni-P underbump metallization (UBM) during aging. For comparison, the interface between SAC and electrolytic Ni UBM was also examined under similar aging conditions. The joint in the electrolytic Ni/SAC sample showed a smooth, flat interface between the Ni and intermetallic compounds, even after a long aging time. In contrast, electroless Ni-P/SAC exhibited an irregular interface, the irregularity of which became more severe with increased aging time. This observed roughness was initiated by large breaks across the P-rich layer. The breaks were filled with the overlying Ni-Sn-P phase material, which provided an easier interdiffusion path for Ni and Sn in the opposite direction. As a result, the local consumption of the Ni(-P) layer was accelerated, and the interface was serrated. The local maximum consumption rate of the Ni-P layer, as calculated from the minimum thickness of this layer in each sample with aging time, was similar to that of an electrolytic Ni layer.

Reliability analysis of Au–Sn flip-chip solder bump fabricated by co-electroplating

In this study, we fabricated eutectic Au–Sn (Au–20 wt% Sn) flip-chip solder bumps from a single electroplating bath. After reflowing, the average diameter of the solder bump was approximately 80 μm. The (Ni,Au)3Sn2 phase was initially formed when the liquid Au–Sn solder reacted with the Ni UBM (under bump metallization). After aging at 150 °C, the (Ni,Au)3Sn2 intermetallic compound (IMC), which formed at the interface during reflow, was fully transformed into the (Au,Ni)Sn IMC due to the restricted supply of Ni atoms from the UBM to the interface. On the other hand, after aging at 250 °C for 1000 h, two IMC layers, (Au,Ni)Sn and (Ni,Au)3Sn2, were formed at the interface. The lower (Ni,Au)3Sn2 phase was formed when the (Au,Ni)Sn phase reacted with the Ni UBM. The interfacial (Au,Ni)Sn IMC grew with the preferential consumption of the available δ-phase in the solder matrix. Eventually, the ζ-phase covered most of the interfacial layer. In the bump shear tests, the Au–Sn/Ni joint aged at 150 °C fractured through the bulk of the solder, confirming the mechanical reliability of the interface. In contrast, the Au–Sn/Ni joint aged at 250 °C fractured along the interface, thereby demonstrating brittle failure, possibly a result of the brittle IMC layer at the interface.

Preparation and Temperature Cycling Reliability of Electroless Ni(P) Under Bump Metallization

The reliability of electroless Ni(P) under-bump metallization (UBM) was evaluated via temperature cycling and solder bump shear strength tests. Commercial diodes and dummy dies fabricated in-house were used as substrates for the electroless Ni(P) UBM deposition. Solder bumps were formed after reflowing eutectic 63Sn37Pb solder foils over the Ni(P) UBM. The solder bump shear strength was measured before and after different temperature cycling. The results from this study showed that the UBM thickness and dimension had important effects on the solder bump shear strength and reliability. Both the larger UBM dimension and larger UBM thickness tended to induce higher stress in the UBM, which resulted in the lower solder bump shear strength and lower temperature cycling reliability. A better UBM structure solution for high current electronic packaging application is indicated in this paper

Three-Dimensional Thermoelectrical Simulation in Flip-Chip Solder Joints with Thick Underbump Metallizations during Accelerated Electromigration Testing

In flip-chip solder joints, thick Cu and Ni films have been used as under bump metallization (UBM) for Pb-free solders. In addition, electromigration has become a crucial reliability concern for fine-pitch flip-chip solder joints. In this paper, the three-dimensional (3-D) finite element method was employed to simulate the current-density and temperature distributions for the eutectic SnPb solder joints with 5-μm Cu, 10-μm Cu, 25-μm Cu, and 25-μm Ni UBMs. It was found that the thicker the UBM is the lower the maximum current density inside the solder. The maximum current density is 4.37 × 104 A/cm2, 1.69 × 104 A/cm2, 7.54 × 103 A/cm2, and 1.34 × 104 A/cm2, respectively, when the solder joints with the above four UBMs are stressed by 0.567 A. The solder joints with thick UBMs can effectively relieve the current crowding effect inside the solder. In addition, the joint with the thicker Cu UBM has a lower Joule heating effect in the solder. The joint with the 25-μm Ni UBM has the highest Joule heating effect among the four models.

Effect of contact metallization on electromigration reliability of Pb-free solder joints

The effect of underbump metallization (UBM) on electromigration (EM) lifetime and failure mechanism has been investigated for Pb-free solder bumps of 97Sn3Ag composition in the temperature range of 110–155°C. The EM lifetime of the SnAg Pb-free solders with either Cu or Ni UBM was found to be better than the eutectic SnPb (63Sn37Pb) solders but worse than high-Pb (95Pb5Sn) solders. In the test temperature range, the EM lifetimes were found to be comparable for Cu and Ni UBMs but with different activation energies: 0.64–0.72eV for Cu UBM and 1.03–1.11eV for Ni UBM. EM failure was observed only in solder bumps with electron current flow from UBM to the substrate. Failure analysis revealed that EM damage was initiated by the formation of intermetallic compounds (IMC) at the UBM∕solder interface which was found to be significantly enhanced by mass transport driven by the electron current. Under EM, the continued growth of IMC with the dissolution of the UBM and the accumulation of Kirkendall voids resulted in the formation of interfacial cracks and eventual EM failure of the solder bump. For Ni UBM, the IMC formation was dominated by the Ni3Sn4 phase while for Cu UBM, a bilayer of Cu3Sn∕Cu6Sn5 was found. Void formation at the Cu6Sn5∕solder interface was found to be important in controlling the EM lifetime of the Cu UBM solder.

Interfacial Reaction and Bump Shear Property of Electroplated Sn-37Pb Solder Bump with Ni under Bump Metallization during Multiple Reflows

The interfacial reactions and bump shear properties of the electroplated Sn-37Pb (in wt.%) solder bumps with the Ni under bump metallization (UBM) were investigated as a function of the number of reflows. A continuous facetted Ni3Sn4 intermetallic compound (IMC) layer was formed at the interface between the solder bump and the Ni UBM during reflow. The thickness of the Ni3Sn4 IMC layer was 0.41 μm after 1 reflow, and then the thickness of the IMC layer increased with increasing the number of reflows. The shear properties of the bumps indicated the maximum values after 1 reflow, and then decreased with increasing the number of reflows. The fracture surfaces of the bumps showed ductile failure characteristics after 1 reflow, and then the fraction of the brittle fracture, induced by the IMC formed at the interface, increased with increasing the number of reflows.

IMC Growth of Solid State Reaction between Ni UBM and Sn–3Ag–0.5Cu and Sn–3.5Ag Solder Bump Using Ball Place Bumping Method during Aging

The bumps for flip chip interconnection are becoming smaller and smaller. Since lead-free solders became popular, Ni-based under bump metallization (UBM) has attracted attention in recent years because of their slower reaction rate than traditional Cu-based UBM. However, there is little data concerning the solid state reaction between small lead-free solder bumps and Ni-based UBM. In this work, Sn–3Ag–0.5Cu and Sn– 3.5Ag solder bumps were fabricated with 110-mm-diameter solder balls on electrolytic Ni, and the growth kinetics of intermetallic compound (IMC) layers and the morphology of bumps during long-term aging were investigated. The IMC layer exhibited parabolic growth, and the activation energy values for the Sn–3Ag–0.5Cu or Sn–3.5Ag solder/Ni UBM were obtained. The growth rate accelerated at 463 K or above. (Ni,Cu)3Sn4 or Ni3Sn4 IMC was formed mainly at the solder/Ni interface after long-term aging. Large voids were formed at the solder/IMC interface at 463 K or above. The voids are the result of stress by volume expansion due to IMC growth. Coarse Ag3Sn grains were observed adjacent to the voids and contributed to void initiation.

Morphology and kinetic study of the interfacial reaction between the Sn-3.5Ag solder and electroless Ni-P metallization

This work summarizes the interfacial reaction between lead-free solder Sn-3.5Ag and electrolessly plated Ni-P metallization in terms of morphology and growth kinetics of the intermetallic compounds (IMC). Comparison with pure Ni metallization is made in order to clarify the role of P in the solder reaction. During reflow, the IMCs formed with the Ni-P under-bump metallization (UBM) exist in chunky crystal blocks and small crystal agglomerates, while the ones with the sputtered Ni UBM exhibit uniformly scallop grains with faceted surfaces. The IMC thickness increases with reflow time following approximately a t1/3 power law for both systems. The IMC growth rate is higher with the Ni-P UBM than the Ni UBM. The thickness of the Ni3Sn4 layer increases linearly with the square root of thermal aging time, indicating that the growth of the IMCs is a diffusion-controlled process. The activation energy for Ni3Sn4 growth in solid-state reaction is found to be 110 kJ/mol and 91 kJ/mol for the Ni-P and sputtered Ni UBMs, respectively. Kirkendall voids are detected inside the Ni3P layer in the Sn-3.5Ag/Ni-P system. No such voids are found in the Sn-3.5Ag/Ni system.

Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage

The interfacial reaction between electroless Ni(P) under-bump metallization (UBM) and solders is studied. A P-rich layer forms in the UBM along the solder side after reflow and thermal aging. Crack formation inside the P-rich layer can sometimes penetrate throughout the entire UBM layer structure. The Ni(P) UBM degradation occurs earlier in the Sn3.5Ag solder than in Sn37Pb because of its higher reflow temperature. Despite the formation of a P-rich layer and cracks inside the UBM, it still keeps its original function within the high-temperature storage period in this study. Explanations for the formation of the P-rich layer and cracks in the UBM are outlined along with explanations for the Ni(P) UBM degradation process.