Near-band Edge Research Articles

Structural, Morphological, and Optical Properties of Nano- and Micro-Structures of ZnO Obtained by the Vapor–Solid Method at Atmospheric Pressure and Photocatalytic Activity

Micro- and nano-structures of ZnO were synthesized by the vapor–solid method at 600, 700, and 800 °C in atmospheres of Ar and air, at atmospheric pressure. The structural characterization XRD shows that the nano-structures synthesized in air atmosphere at 600 °C, while diffraction peaks were found due to Zn because the presence of metallic Zn remains on the surface of the pellet. SEM images show that the morphologies range from nano-wires to micro-tubes. When cathodoluminescence is measured in micro-tubes, there is a shift of the near-band edge of the ZnO toward red; this is due to structural defects in the ZnO network. This result is corroborated with panchromatic CL measurements, which exhibit a difference in brightness between the micro-tubes. Furthermore, EDS measurements show an atomic quantity ratio of Zn:O that differs from the stoichiometric composition in the micro-tubes. The photocatalytic activity of three types of structures—nano-wires, micro-tubes, and micro-rods under UV irradiation using methylene blue as a model pollutant—were evaluated. The best response was obtained for nanowires, not only because they have a larger surface area but also because of the present defects.

Effect of magnesium doping on the structure, optical properties and photocatalytic efficiency of ZnO nanostructures deposited by atmospheric pressure MOCVD

ZnO nanostructures doped by magnesium impurity were grown on Si substrates by atmospheric pressure MOCVD deposition using Zn and Mg acetylacetonates as initial precursors. XRD patterns confirm the successful incorporation of Mg ions into ZnO lattice. Room-temperature photoluminescence spectra of Mg-doped ZnO nanostructures demonstrate near-band edge emission and visible deep-level emission with ratios 2.9, 1.3 and 0.3 correspondingly for 1, 2.4 and 5.7 at. % of Mg in ZnO nanostructures. Raman measurements showed decreasing in intensity for ZnO modes with increasing Mg content. The best photodegradation rate constant was observed for ZnO NS with 2.4 at. % of Mg.

Crystal Structure, Optical, Photoluminescence, Raman, and Magnetic properties for Sm-doped Cr-Mg-Bi Ferrites using sensor

The current work,A series of rare earth Sm3+ ion substituted Cr-Mg-Bi ferrites Cr0.7Mg0.2Bi0.1SmxFe2-xO4 (x = 0.00, 0.02, 0.04, and 0.06) have beensynthesized by thesol-gel auto-combustion method. The XRD, FESEM, HRTEM,UV-Vis, FTIR, Raman spectroscopy, Photo Luminesce and Magnetic Properties analysis have been used to investigate structural, morphological, optical, Raman spectroscopy, Photo Luminesce and Magnetic Properties. Every sample contains a single-phase spinel structure, as confirmed by XRD.The substitution of Sm3+ ions is found to increase the lattice parameter from 8.258–8.248Å.A monotone diffraction peak (311) is visible near small angles of degrees (35.33 to 35.13). The Debye-Scherrer equation, the nanoparticles' crystallite size ranges from 35.357–54.778 nm.FE-SEMs reveal a spherical grain that groups and has a porous form, with particles 38.13 to 53.28 nmin size.HR-TEM micrographs illustrate spherical morphology and their average particle size decreases from 55.32 to 65.42 nm. The selected area electron diffraction (SAED) pattern confirms the crystal planes which were revealed from XRD calculations.The spinel structure was confirmed by FTIR spectroscopy, which found 414 cm-1 and 516 cm-1 vibrational band at the octahedral and tetrahedral sites.As the concentration of Sm3+ rises, the direct and indirect band gap energy values determined from UV-Vis show an increase and decrease.The generated NPs' semiconducting nature is confirmed by the strong correlation between the g-value and particle size change.Photoluminescence (PL) investigation shows that all processed samples have four bands.(i) peak centered at 412 nm, which is near-band edge emission and corresponds to the ultraviolet (UV) band,(ii) The violet band has a high-intensity peak at 434 nm,(iii) The blue band is related to a low-intensity, sharp peak located at 466 nm, and (iv) A broad peak at 502 nm with a very low intensity distinguishes the green band.The Raman spectroscopy investigation revealed that the CMBSF nanoparticles had a mixed spinel structure. The magnetic investigation shows that when the Sm content of ferrites increases, saturation magnetization drops from 39.86 to 33.16 emu/g.The sample's coercivity (Hc) increases from 16.06 to 21.90 KOe with Sm substitution.

Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

The external quantum efficiency (EQE) and internal quantum efficiency (IQE) of radiation are quantified by omnidirectional photoluminescence measurements using an integrating sphere for two types of GaN crystals with different carbon concentrations ([C] = 1×1014 cm−3, 2×1015 cm−3). In the sample with lower [C], when the excitation density is 140 W cm−2, the EQE and IQE for near-band-edge (NBE) emission are 0.787% and 21.7%, respectively. The relationship between [C] and the IQE for NBE emission indicates that carbon impurities work as effective nonradiative recombination centers (NRCs) in n-type GaN, and major NRCs switch from carbon impurities to intrinsic NRCs, such as vacancies, when [C] falls below 3.5×1014 cm−3.

Study of graphene incorporation into ZnO-PVA nanocomposites modified electrode for sensitive detection of cadmium

The presence of heavy metals often causes significant health risks, particularly cadmium, which is known for its high toxicity. In this study, a glassy carbon electrode was successfully modified by incorporating ZnO-PVA-Graphene nanocomposite, leveraging the excellent electrical properties and electron mobility of the material. Comprehensive material analysis, including XRD, confirmed that ZnO maintained its hexagonal wurtzite crystal structure despite the addition of graphene. Moreover, FESEM analysis showed that increasing graphene concentration led to a reduction in ZnO particle size by 85, 68, and 52 nm, respectively, accompanied by a decrease in band gap energy, as verified by UV–Vis measurements. Photoluminescence tests were also conducted and the result showed a noticeable blue shift in ZnO-PVA-Graphene nanocomposites compared to ZnO-PVA, specifically in the near band-edge (NBE) UV emission within the 374–379 nm wavelength range. Through I–V characterization, the optimal graphene concentration for cadmium detection was identified as 1.5 wt% in ZnO-PVA-Graphene nanocomposites, showing an approximate ohmic response. Meanwhile, square-wave voltammetry analysis of cadmium concentrations ranging from 0 to 80 ppm produced a coefficient of determination of 0.98926 and a Limit of Detection (LOD) of 9.88 ppm. These results showed the significant potential of ZnO-PVA-Graphene nanocomposites as a promising material for further development as an effective electrode modifier, enhancing the sensitivity of detection systems.

Electrical, optical and nonlinear optical process in spray pyrolyzed Zn:CuO nanostructures for optoelectronic device applications

Nanostructured pure and Zn doped CuO thin films were deposited on a glass substrate at 400 °C using the chemical spray pyrolysis method. The fabricated thin films were characterized to study the compositional, structural, morphological, optical and electrical properties. X-ray diffraction spectra show the polycrystalline nature of the sample and confirm the monoclinic phase of copper oxide. Raman analysis further confirms the absence of cuprous oxide phases and impurities. High absorbance in the visible region was observed for the films with bandgap values ranging from 1.7–2.0 eV. A near-band edge emission peak in the red region is recorded in the photoluminescence spectra. Uniformly distributed nanoparticles are observed in SEM images. Hall effect measurements indicate p-type conductivity and 5% Zn doped copper oxide showed the highest conductivity and carrier concentration. The non-linear absorption coefficient (β eff) of the samples was obtained with the help of z-scan method with a Helium-Neon laser under the CW regime. Zn doping results in an increase in nonlinear absorption, supporting the use of Zn:CuO for optoelectronic devices.

Effect of bonding description and strain regulation on the conductive transition of Bi semimetal

Due to the differences in the treatment methods of the electron–ion interaction and the critical strain mode of the transition from semimetals to semiconductors, the corresponding strain modulation mechanism in layered bismuth (Bi) crystals remains elusive. In this work, the effects of van der Waals (vdW) correction on the crystal structure and electrical properties of Bi in an equilibrium/strained state are comparatively studied based on the density functional theory. It is found that vdW corrections can better describe the layered crystal and bandgap structure of Bi under equilibrium/strain conditions. With the vdW modification, bismuth can be converted from a semimetal to a semiconductor within a small compression range that is experimentally available. This transition is induced by the transfer of the conduction band minimum and the valence band maximum and is related to the competition of the near-band edge energy state near the Fermi level of bismuth. The present results not only provide guidance for the accurate study of the crystal structure and electronic properties of complex model systems, such as Bi or Bi-based inherently nanostructured materials, but also reveal strain regulation mechanism of Bi and predict its potential application in the semiconductor electronic devices.

Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

To investigate the carrier recombination processes in GaN crystals grown by the low-pressure acidic ammonothermal (LPAAT) method, the photoluminescence (PL) spectra and PL lifetimes of LPAAT GaN crystals grown on acidic ammonothermal (AAT) GaN seed crystals were correlated with the growth polarity and species/concentration of point defects. The PL spectra of LPAAT GaN grown toward the (0001¯) direction (−c region), which provided the highest growth rate, exhibited a predominant near-band edge (NBE) emission. Neither bandgap narrowing nor Burstein–Moss shifts due to high concentration residual impurities were observed in the NBE emissions, indicating higher purity than the previously reported AAT GaN crystals. In addition, strain-induced energy shift or energy broadening of excitonic emission peaks was not observed, indicating excellent crystal coherency. Because of the reduced concentration of midgap recombination centers, a record-long room-temperature PL lifetime for the NBE emission of ammonothermal GaN (40 ps) was obtained from the −c region. Meanwhile, the PL spectra also exhibited the yellow and blue luminescence bands originating from particular deep-state radiative recombination centers. The major vacancy-type defects acting as midgap recombination centers are identified as vacancy complexes comprising a Ga vacancy (VGa) and a few N vacancies (VN), namely, VGa(VN)n buried by H and/or O, where n is an integer. Further reduction of such defect complexes will allow less compensated stable carrier concentration in the LPAAT GaN crystals.

Improvements of multifunctional spintronic and optoelectronic applications of nanostructured Eu-doped ZnS thin films through magnetic and linear, nonlinear optical investigations

This study describes the spintronic and optoelectronic improvements upon Eu substitution in Zn atomic site of the nanostructure ZnS thin films. The electron beam deposition technique has been used to deposit a series of Zn1-xEuxS thin films on a glass substrate with different Eu dopants (x = 0, 0.01, 0.03, 0.05, and 0.08). The nanostructure nature of the Eu-doped ZnS thin film has been confirmed from structural and morphology studies performed by the X-ray diffraction (XRD) and atomic force microscope (AFM) measurements. XRD investigations further show a hexagonal-type structure with no detectable extra phases with the lattice parameter c increasing, while a decrease linearly with increasing Eu-dopant in the ZnS hosted lattice. The microstructures analysis reveals a reduction in the mean crystallite size and increasing in the lattice strain of the films with rising Eu doping. The Fourier transform infrared spectra display the existence of chemical bonds in the thin films whereas photoluminescence reveals near-band edge emission. The linear optical parameters were obtained from the analysis of the transmission data measured by the spectrophotometer technique. The results reveal that the band gap energy (EgOpt) reduces by raising ohe Eu doping ratio, which is ascribed to the structural deformation (strain and/or defects) confirmed from structural analysis, density of localized states and PL measurements. The index of refraction n was calculated using the Swanepoel method. The values were found to increase as the level of Eu doping grows, which is associated with the rise in polarizability. Wemple and DiDomenico's (WDD) model was utilized to compute the dispersive and oscillator energies (Eo, and Ed), the nonlinear absorption coefficient βc, nonlinear refractive index n2, and nonlinear optical susceptibility χ3. The results demonstrate that the adjustability of EgOpt , Eo, and Ed of ZnS: Eu films is conducted to improve the nonlinear optical characteristics, providing it well-suited for optoelectronic device implementations. On the other hand, ZnS doped with Eu film displays inherent ferromagnetic properties at room temperature, as evidenced by the results of the magnetic investigation. This finding could be attributed to the presence of sulphur defects (vacancies), as supported by photoluminescence (PL) measurements, which lead to the creation of the bound magnetic polaron. These discoveries indicate the potential of utilizing Eu-doped ZnS film in the effective development of spintronic devices.

Decisive role of preparation technique on the structural, electrical and magnetic properties of vanadium doped ZnO nanoparticles

1% vanadium doped ZnO powders have been successfully synthesized via two different preparation techniques viz., glycine assisted combustion method and mechanical attrition method to understand their impact on the structure-property relation. X-ray Diffraction study validates the Wurtzite phase formation of ZnO with hexagonal structure. X-ray diffraction peak discloses the marked role of size and strain component. Evidently, the shift of lattice strain with the preparation techniques from compressive to tensile nature show the importance of structure property relations in the ZnO compounds. SEM micrographs depict the formation of densely populated nanograins with networking like structures which is characteristics of combustion synthesized product whereas as top down approach exhibits the presence of coarse grains amidst the broken sea of fine particles. Selected area electron diffraction (SAED) images display ring and bright circular spot pattern with changes in method of preparation, which further clarifies the distinct nature of investigated ZnO:V particles. Vibrational spectral study gives clear evidence on the structural disorder as deduced from the changes associated with longitudinal optical mode phonon scattering. Interestingly, the UV spectral study divulges the increment in optical band gap as well as a strong visible light absorption (about 30 %) for milled ZnO:V over their chemically prepared counterparts. Photoluminescence spectra of milled V doped ZnO upheld the structural disorder taken place with the suppression of Near Band Edge (NBE) transition and the shifting of broad asymmetric defect emission band towards the lower wavelength regime. Impedance study enlightens the crucial role of synthesis method with 5 times enhanced grain boundary resistance along with suppression of grain contribution in the milled samples. Magnetic study highlights the remarkable distinction of preparation route which alters the ferromagnetic ordering in the combustion synthesized samples to conventional diamagnetic signature of the host ZnO in the milled samples.

Effect of aspect ratio on the nonlinear optical properties of ZnO nanorods

In this work, we synthesized ZnO nanorods with two different aspect ratios using the solution method. Morphological and crystalline structures were investigated using TEM and XRD analysis. Also investigated the effect of aspect ratio on the optical properties of ZnO nanorods. With an increasing aspect ratio of the nanorods, the absorption peak is red-shifted and near-band edge emission is suppressed. The nonlinear absorption is enhanced with the increasing aspect ratio of ZnO nanorods.

Role of Surface Chemistry of Ta Metal Foil on the Growth of GaN Nanorods by Laser Molecular Beam Epitaxy and Their Field Emission Characteristics.

This study investigates the influence of surface nitridation of Ta metal foil substrates on the growth of GaN nanorods using the laser molecular beam epitaxy (LMBE) technique and the field emission characteristics of the grown GaN nanorod ensemble. Surface morphology examinations underscore the pivotal role of Ta foil nitridation in shaping the dimensions and densities of GaN nanorods. Bare Ta foil fosters the formation of high-density, vertically self-aligned GaN nanorods at a growth temperature of 700 °C. Furthermore, the density of these nanorods is directly related to the duration of Ta foil nitridation, with increased duration leading to a reduced nanorod density. X-ray Photoelectron Spectroscopy (XPS) studies reveal that the transition of the Ta foil surface from tantalum oxide to tantalum nitride during nitridation emerges as a crucial factor influencing GaN nanorod growth. Photoluminescence (PL) spectroscopy at ambient temperature reveals a strong near-band-edge (NBE) emission peak with negligible defect-related peaks, displaying the high optical quality of the GaN nanorods. The highly dense vertically aligned GaN nanorod ensemble growth without Ta prenitridation exhibits the most favorable field emission performance, featuring a turn-on field of 2.1 V/μm, a field enhancement factor of 2480, and a stable long-term operation at the emission current density of 2.26 mA/cm2. This study advances the understanding of the role of the surface chemistry of metal foil in determining GaN nanorod growth and opens up exciting possibilities for tailoring advanced optoelectronic devices for specific application requirements.

Photo-induced luminescence mechanism and the correlated defects characteristics in the sol-gel derived samarium ion substituted tin oxide (Sn1-xSmxO2) nanoparticles

Rare earth complexes have gained attention in recent years for their remarkable luminescence properties, especially their long lifetimes, clear emission bands, and significant luminous quantum efficiency. In the ultraviolet area, the lanthanide ions exhibit relatively tiny absorption. The current investigation systematically portrays the tailoring of the micro-structural, opto-electonic and defect related features of the sol-gel derived pristine and rare earth element-samarium (Sm3+) substituted tin oxide (SnO2) i.e., Sn1-xSmxO2 (x = 0.0, 0.1, 0.2 & 0.3) nanoparticles (NPs). The structural, optical, electronic, morphological, photo-induced luminescence and defects related characteristics of the NPs were explored as a function of samarium (Sm3+) substitution level. In-depth analysis of the structure-property correlation of the Sn1-xSmxO2 NPs is the goal of this study, focusing especially on the properties related to vacancy evolution and luminescence. The elemental mapping results revealed through energy dispersive X-ray spectroscopic (EDS) technique confirmed that the Sm-substitution is distributed uniformly throughout the NPs. The X-ray powder diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and field emission scanning electron microscopy (FESEM) studies corroborate that the Sm3+ substitution in the SnO2 matrix causes the decrease in crystallite size of the NPs and increase in the dislocation density. A monotonic increase in lattice strain has been observed using the Williamson – Hall (W – H) approach, which is in line with the NPs' increased dislocation density and decreased crystallite size with the Sm3+ substitution level. The presence of vacancy-type defects inside the NPs was demonstrated by positron annihilation lifetime (PAL) spectroscopic measurements, and a decrease in defects was noticed as the level of Sm3+ substitution increased. To explore the optical characteristics and the evolution of the energy band gap with Sm3+ substitution level, the optical absorption (OA) spectroscopic measurement was carried out. As the Sm-substitution level rises, the optical energy band gap of the substituted SnO2 NPs widens relative to that of pure SnO2 NPs. The existence of various absorbance bands corresponding to the atomic vibrations within the NPs were investigated by the Fourier-transform infrared (FT-IR) spectroscopic technique. The photo-induced fluorescence (FL) emission spectroscopic analysis evidenced that the defect density decreased as the Sm-substitution level increased, which is in accordance with the PAL spectroscopic studies. The FL spectra showed the two typical near band edge (NBE) and deep level emission (DLE) peaks of the NPs. The proportion of different defects and vacancies associated with the FL emission transitions are portrayed as Pie-chart diagrams. The tailored NPs can establish to be effective candidates for possible spintronic and optoelectronic applications including magneto-optical devices.

In situ luminescence measurements of GaN/Al2O3 film under different energy proton irradiations

Ion beam-induced luminescence (IBIL) experiments were performed to investigate the in situ luminescence of GaN/Al2O3 at varying ion energies, which allowed for the measurement of defects at different depths within the material. The energies of H+ were set to 500 keV, 640 keV and 2 MeV, the Bragg peaks of which correspond to the GaN film, GaN/Al2O3 heterojunction and Al2O3 substrate, respectively. A photoluminescence measurement at 250 K was also performed for comparison, during which only near band edge (NBE) and yellow band luminescence in the GaN film were observed. The evolution of the luminescence of the NBE and yellow band in the GaN film was discussed, and both exhibited a decrease with the fluence of H+. Additionally, the luminescence of F centers, induced by oxygen vacancies, and Cr3+, resulting from the 2E →4A2 radiative transition in Al2O3, were measured using 2 MeV H+. The luminescence intensity of F centers increases gradually with the fluence of H+. The luminescence evolution of Cr3+ is consistent with a yellow band center, attributed to its weak intensity, and it is situated within the emission band of the yellow band in the GaN film. Our results show that IBIL measurement can effectively detect the luminescence behavior of multilayer films by adjusting the ion energy. Luminescence measurement can be excited by various techniques, but IBIL can satisfy in situ luminescence measurement, and multilayer structural materials of tens of micrometers can be measured through IBIL by adjusting the energy of the inducing ions. The evolution of defects at different layers with ion fluence can be obtained.

The impact of silver incorporation on the structural, morphological, and optical properties of spray-pyrolyzed cubic SnS thin films

Cubic/π-SnS phase has a strong optical absorption onset and larger dielectric constant, which is favorable for solar energy conversion. Hence, these cubic SnS phase films are gaining intense interest in the research community. However, the physical properties and thus its practical application heavily depends on the synthesis condition. We present here the effects of incorporation of silver (Ag) on the physical characteristics of cubic-SnS thin films synthesized by spray pyrolysis. Ag was incorporated at different atomic concentrations of 5, 10, 15, and 20% on cubic SnS thin films. A variety of methods were used to characterize and analyze Ag-incorporated thin films. Structural and vibrational properties were analyzed using x-ray diffraction (XRD) and Raman Spectroscopy, which shows that 5 at% Ag incorporated cubic-SnS have most desirable properties. However, on higher incorporation of Ag, the deterioration of cubic SnS and formation of secondary phases (SnS2 and Sn2S3) is evident. The existence of Sn, S, and Ag ions in the necessary oxidation state has been confirmed by XPS analysis. A direct bandgap was observed in the region of 1.79 and 1.59 eV for the SnS and Ag: SnS thin films, respectively with the aid of Ultraviolet-Visible Spectroscopy (UV–vis Spectroscopy). The Photoluminescence Spectroscopy (PL) showed the near-band edge emission peak for all the samples. The needle shape morphology was observed in Scanning Electron Microscopy (SEM) images and roughness variation is estimated using optical profilometer.

Leveraging plasmonic hot electrons to quench defect emission in metal-semiconductor nanostructured hybrids.

Modeling light-matter interactions in hybrid plasmonic materials is vital to their widening relevance from optoelectronics to photocatalysis. Here, we explore photoluminescence (PL) from ZnO nanorods (ZNRs) embedded with gold nanoparticles (Au NPs). A progressive increase in Au NP concentration introduces significant structural disorder and defects in ZNRs, which paradoxically quenches defect related visible PL while intensifying the near band edge (NBE) emission. Under UV excitation, the simulated semi-classical model realizes PL from ZnO with sub-bandgap defect states, eliciting visible emissions that are absorbed by Au NPs to generate a non-equilibrium hot carrier distribution. The photo-stimulated hot carriers, transferred to ZnO, substantially modify its steady-state luminescence, reducing NBE emission lifetime and altering the abundance of ionized defect states, finally reducing visible emission. The simulations show that the change in the interfacial band bending at the Au-ZnO interface under optical illumination facilitates charge transfer between the components. This work provides a general foundation to observe and model the hot carrier dynamics and strong light-matter interactions in hybrid plasmonic systems.

Enhancing the optoelectronic performance of CZTS thin films through cobalt doping via nebulizer-assisted spray pyrolysis technique

In the current investigation, the influence of cobalt doping on the optoelectronic performance of Copper Zinc Tin Sulfide (CZTS) thin films is analyzed. An economic route of synthesis is achieved by employing nebulizer-assisted spray pyrolysis technique. The cobalt concentration is varied from 1 to 5 wt%. The structural, morphological, optical and electrical studies were also made to understand the underlying mechanism that supports the enhancement of photo detecting-capability of these films. It is observed from the XRD studies that initially the doped cobalt replaces zinc in the CZTS lattice. When the concentration of Co was increased beyond 3 wt%, in addition to CZTS we could observe the phase of Copper Cobalt Tin Sulfide (CCTS). At higher concentration the samples exhibit the presence of two phases simultaneously with CCTS as dominant phase. Morphological images from SEM show larger distinct particles for 3% Co doped CZTS. A better absorption in the visible region is witnessed for all the films. The band gap was found to increase with the increase in the concentration of the dopant atom upto 3 wt%. The photoluminescence analysis supports a near-band edge emission around 735 nm. The photocurrent was found to be maximum for 3% Co doped CZTS sample. The rise time and fall time of Co-doped samples becomes halved when compared with the pristine sample. Our research demonstrates the potential applications of CZTS:Co thin films in the realm of photodetectors.

High-temperature photoluminescence properties of various defects in hydrothermally grown ZnO microrods

High-temperature photoluminescence properties of hydrothermally grown ZnO microrods were reported. Photoluminescence spectra of ZnO microrods deconvoluted into three Gaussian components: near band edge (NBE) emission, Violet emission (VL) and Yellow emission (YL) peaks corresponding to free excitons, zinc vacancies and interstitial oxygen atoms, respectively. Increasing the temperature caused a redshift of the energy position of the NBE and VL peaks and a blueshift of the energy position of the YL peak were observed. In the temperature range from 300K to 473K, the intensities of the NBE and VL bands varied based on a nonlinear pattern. Intensity of these emission bands decreases from temperature 473K–673K. As the temperature increases, changes in the energy and crystal structures of the material due to decrease in the concentration of defects cause a blueshift of the emission bands related to interstitial atoms, and a redshift of the emission bands related to vacancies.

Wrinkle type nanostructured of Al-Ce co-doped ZnO thin films for photocatalytic applications

ZnO:Al:Ce thin film photocatalysts were prepared by sol-gel spin coating method for the photocatalytic degradation of Methylene Blue (MB). The effect of Al-Ce co-doping on the structural, surface, optical and photocatalytic properties of ZnO films was analyzed. The crystallite size of the films calculated using the Williamson-Hall method decreased with Al-Ce co-doping. The enhanced photocatalytic activities of ZnO:Al:Ce wrinkle type nanostructured films can be associate with the increased surface area due to the crystallite size reduction by the Al-Ce co-doping. In the morphology analyzes of the films, the wrinkle network structure was observed in the pure ZnO and (6 %) Al-Ce co-doped ZnO films. All ZnO:Al:Ce films exhibited high transparency in the visible light (> 90%). Photoluminescence (PL) spectra depict near band edge (NBE), violet, blue, blue-green and green emission in deposited films. The photocatalytic test shows that the presence of Al-Ce enhances MB degradation efficiency up to 94 %. As a result, it has been observed that the co-existence of Al and Ce has significant effects on both the physical and photocatalytic properties of ZnO films.

Rational construction of hollow ZnO@SnS2 core-shell nanorods: A way to boost catalytic removal of Cr (VI) ions, antibiotic and industrial dyes

Herein, the novel hollow ZnO@SnS2 core-shell nanorods with variable shell thickness have been synthesized by a chemical synthesis approach. The transmission electron microscopy (TEM) images signified the creation of a hollow core-shell nanostructure. The SnS2 layer coating on ZnO nanorods broadens visible light absorption and suppresses near-band edge emission of ZnO nanorods. Interestingly, the band gap (optical) of the developed ZnO nanorods decreased from 3.3 eV to 2.1 eV after the coating of SnS2 shell. Consequently, the coated hollow ZnO@SnS2 core-shell nanorods displayed a significant enhancement in catalytic activity for the decomposition of toxic industrial dyes, pharmaceutical pollutant tetracycline, and Cr(VI) ion in comparison to hollow ZnO NRs. The photon-induced charge carrier generation and separation were confirmed by the three-electrode electrochemical amperometric analysis and impedance analysis under illumination of simulated solar light (AM 1.5, One Sun). Moreover, an exceptionally higher photocurrent generation (∼10 times higher than ZnO nanorod). The improved ZnO@SnS2 core shell NRs catalytic activity was attributed to its core-shell structure, proper band structure, and effective charge carrier transfer across the core shell interface. This work offers new insights for the design and growth of visible light-active core shell nanorods for resolving environmental pollution and photocurrent generation.