NbN Films Research Articles

Structure evolution during growth of epitaxial NbN films on Al2O3 (0006) deposited by magnetron sputtering and its impact on electrical properties

Structure evolution during growth of epitaxial NbN films on Al2O3 (0006) deposited by magnetron sputtering and its impact on electrical properties

Nitride thin films grown by thermal laser epitaxy

The growth of a wide range of binary nitride films with excellent properties is reported. These films are deposited by thermal laser epitaxy (TLE). If equipped with CO2–laser substrate heating, TLE allows growth temperatures ≫ 1000 °C combined with strong nitriding conditions, which are established by using ammonia (NH3) gas as a nitrogen precursor. Films deposited on c-plane sapphire substrates include semiconducting nitrides (BN, AlN, ScN, and YN), superconducting nitrides (TiN, VN, ZrN, and NbN), and magnetic nitrides (CrN and GdN). The superconducting transition temperatures of TiN, VN, ZrN, and NbN films are 5.7, 8.9, 8.9, and 16.9 K, respectively. The Néel temperature of CrN films is ≃280 K, and the Curie temperature of GdN films is 66 K; both lie within the reported ranges. The controlled fabrication of different phases of individual nitride compounds is explored, revealing that subnitride phases can be grown at lower NH3 pressures. This study also demonstrates the heteroepitaxial growth of multilayer nitride films on c-plane sapphire.

Inductance and penetration depth measurements of polycrystalline NbN films for all-NbN single flux quantum circuits

Abstract In this paper, we report on a systematic study of the inductance and magnetic field penetration depth (λ) of polycrystalline NbN superconducting thin films. By employing a four-metal-layer fabrication process specifically designed for all-NbN single-flux-quantum circuits, we constructed a superconducting quantum interference device loop composed of two parallel NbN SNS junctions, NbN microstrips, and NbN ground planes for precise inductance measurement. At 4.2 K, as the linewidth increases from 1 μm to 30 μm, the inductance per unit length (L u) of NbN microstrips significantly decreases, for example, the L u of 250 nm thick NbN microstrips drops from 0.907 pH/μm to 0.047 pH/μm. Compared to Nb, the L u of polycrystalline NbN microstrips is approximately two to three times that of Nb, offering an advantage for manufacturing smaller superconducting inductors. Furthermore, we conducted simulation analysis using InductEx software to extract the λ of NbN films of varying thicknesses. The results indicate that as the film thickness increased from 45 nm to 600 nm, λ initially decreased sharply and then stabilized, with values ranging from 430 nm to 323 nm. Notably, once the film thickness exceeded 200 nm, λ remained essentially constant, even at a temperature of 10 K, where it showed good stability, albeit with a slight increase (about 50 nm) compared to 4.2 K. This dependence of λ on thickness is reasonably explained by considering the effects of NbN film thickness on the superconducting critical temperature and residual resistivity. These research findings not only deepen our understanding of the characteristics of superconducting films but also lay a solid foundation for the future design and manufacture of more compact superconducting circuits at the higher temperature of 10 K.

Magnetotransport of fluxoids in intermediate-phase type-II superconducting NbN thin films around Tc

The mixed state transport properties of type-II superconductors are strongly influenced by the dynamic behavior of quantized magnetic fluxoids around the critical temperature (Tc), where a combination of normal and superconducting properties is exhibited. To understand the mixed state transport properties of type-II superconducting NbN ultrathin films (2D) we measured sheet resistance (RxxM) and Hall resistance (RxyM) of a 5-nm-thick NbN film around Tc (10.75 K) at temperatures 10.40, 10.68, and 10.77 K. Hall resistance (HR) was measured in external out-of-plane and in-plane magnetic fields up to 6 T, using 100 µA and 1 mA driving current in Van der Pauw geometry. The electric field of applied bias and Lorentz force of applied external magnetic field causes a movement of the normal conducting electrons within each fluxoid. The moving fluxoids cause dissipation and generation of Hall voltage. We developed a macroscopic analysis of the Hall resistance arising from fluxoids, to advance the differentiation between dissipating current and superconducting currents in type-II superconductors at Tc. We have extracted the number of normal conducting carriers per fluxoid and areal density and mobility of the fluxoids in dependence on the external magnetic field. This differentiation provides valuable insights into the dissipation mechanisms observed during transport measurements, e.g., after localized heating due to single photon absorption in nanostructured type-II superconductors. Furthermore, the developed macroscopic analysis of Hall resistance of fluxoids shows promising potential for investigating the fundamental aspects of fluxoid-defect interactions in type-II superconductors. Published by the American Physical Society 2024

Signature of the Reduced Sound Velocity in Thin NbN Films

Signature of the Reduced Sound Velocity in Thin NbN Films

Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing

This study investigated the relationship between the superconducting properties, electrical properties, sputtering process parameters, and post-growth annealing of NbN films. Four series of NbN films were deposited by DC magnetron sputtering using different process parameters. With the assistance of a four-probe method, the superconducting performance presented first an increase and then a decreasing trend as the resistance of the prepared films increased, which could be attributed to the variation of the N/Nb ratio in the films. This correlation implied that it is very challenging to fabricate films with both high Tc and high resistance or high Tc and low resistance by adjusting the sputtering process parameters. In order to overcome these bottlenecks, a series of films were deposited on Si, GaN/Si, SiN/Si, AlN/Si, and AlN/sapphire substrates, and the film deposited on Si was annealed at 900 °C. Annealing reduced the stress of the films on the buffer layer and increased the grain size and crystallinity of the films, except for the films on the GaN/Si substrates. This resulted in a significant decrease in the resistivity of the film and a significant increase in the superconducting transition temperature.

NbN thin films grown on silicon by molecular beam epitaxy for superconducting detectors

Superconducting nanowire single photon detectors (SNSPDs) made with thin NbN films can reach high performances. While sputtering has been the deposition method of choice, here, we show that ammonia-molecular beam epitaxy (NH3-MBE) can produce pertinent epitaxial cubic NbN thin films on silicon substrates using an AlN buffer. Despite granular morphology and a high density of grain boundaries as well as the presence of rotational twins, Tc = 12.7 K for a 5.6 nm thick film and saturation of internal detection efficiency up to 850 nm are achieved. Morphology and stoichiometry as well as strain have a strong impact on the detector properties, highlighting the importance of a precise control of the growth parameters. These results pave the way for high fabrication yield of SNSPDs on large-scale silicon wafers using epitaxial NbN thin films grown by MBE.

CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer

We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or Hc2 (34.06 T boost in Hc2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.

High-uniformity atomic layer deposition of superconducting niobium nitride thin films for quantum photonic integration

Atomic layer deposition (ALD) has been identified as a promising growth method for high-uniformity superconducting thin films for superconducting quantum photonic applications, offering superior uniformity, thickness control and conformality to techniques such as reactive sputtering. The potential scalability of ALD makes this method especially appealing for fabrication of superconducting nanowires and resonators across large areas. We report on the growth of highly uniform superconducting NbN thin films via plasma-enhanced atomic layer deposition (PEALD) with radio frequency substrate biasing, on a 200 mm (8 inch) Si wafer, specifically for superconducting nanowire single-photon detector applications. Niobium nitride films were grown using (tert-butylimido)-tris(diethylamido)-niobium(V) precursor and an H2/Ar plasma. The superconducting properties of a variable thickness series of films (5.9–29.8 nm) show critical temperature (T c) of 13.5 K approaching bulk thickness (28.8 nm) with low suppression down to the ultrathin regime (5.9 nm), with T c = 10.2 K. T c across the 200 mm wafer with 8 nm thick NbN, measured in 15 mm intervals, exhibits minimal variation (<7%). Microbridge structures fabricated on 8 nm thick NbN films also exhibit high critical current densities (J c), > 10 MA cm−2 at 2.6 K. PEALD could therefore be a pivotal technique in enabling large-scale fabrication of integrated quantum photonic devices across a variety of applications.

Restriction of vortex motion in superconducting NbN film via ion irradiation

Restriction of vortex motion in superconducting NbN film via ion irradiation

Competing length scales and 2D versus 3D dimensionality in relatively thick superconducting NbN films

Magneto-transport characteristics of 2D and 3D superconducting layers, in particular, temperature and angular dependences of the upper critical field Hc2, are usually considered to be fundamentally different. In the work, using non-local resistance measurements at temperatures near the normal-to-superconducting transition, we probed an effective dimensionality of nm-thick NbN films. It was found that in relatively thick NbN layers, the thicknesses of which varied from 50 to 100 nm, the temperature effect on Hc2 certainly pointed to the three-dimensionality of the samples, while the angular dependence of Hc2 revealed behavior typical for 2D samples. The seeming contradiction is explained by an intriguing interplay of three length scales in the dimensionally confined superconducting films: the thickness, the Ginzburg–Landau coherence length, and the magnetic-field penetration depth. Our results provide new insights into the physics of superconducting films with an extremely large ratio of the London penetration depth to the Ginzburg–Landau coherence length exhibiting simultaneously 3D isotropic superconducting properties and the 2D transport regime.

Sharpness of the Berezinskii-Kosterlitz-Thouless Transition in Disordered NbN Films.

We present a comprehensive investigation of the Berezinskii-Kosterlitz-Thouless transition in ultrathin strongly disordered NbN films. Measurements of resistance, current-voltage characteristics, and kinetic inductance on the very same device reveal a consistent picture of a sharp unbinding transition of vortex-antivortex pairs that fit standard renormalization group theory without extra assumptions in terms of inhomogeneity. Our experiments demonstrate that the previously observed broadening of the transition is not an intrinsic feature of strongly disordered superconductors and provide a clean starting point for the study of dynamical effects at the Berezinskii-Kosterlitz-Thouless transition.

NbN films with high kinetic inductance for high-quality compact superconducting resonators

Niobium nitride (NbN) is a particularly promising material for quantum technology applications, as entails the degree of reproducibility necessary for large-scale of superconducting circuits. We demonstrate that resonators based on NbN thin films present a one-photon internal quality factor above 10 5 maintaining a high impedance (larger than 2kΩ), with a footprint of approximately 50 × 100 µm 2 and a self-Kerr nonlinearity of few tenths of Hz. These quality factors, mostly limited by losses induced by the coupling to two-level systems, have been maintained for kinetic inductances ranging from tenths to hundreds of pH/ . We also demonstrate minimal variations in the performance of the resonators during multiple cooldowns over more than nine months. Our work proves the versatility of niobium nitride high-kinetic inductance resonators, opening perspectives towards the fabrication of compact, high-impedance and high-quality multimode circuits, with sizable interactions.

Compact superconducting transmon qubit circuits made of ultrathin NbN

We design and fabricate a compact superconducting qubit circuit made of nano-thick NbN film on a high-resistivity silicon substrate, carrying seven transmon qubits. By comparing with the conventional superconducting qubit circuits made of superconducting films with hundred-nanometer thickness, our superconducting qubit circuit has much smaller size in the readout circuit, whose resonator length is only about 1/20 of that in a conventional superconducting circuit. Transmons are measured and characterized in the frequency and time domains with different flux bias. The transition frequency f01 can be adjusted in the range of several GHz. The qubit circuits made of such nano-thick material with high kinetic inductance are promising in the integration of quantum circuits.

Saturating quantum efficiency of SNSPDs with disorder manipulation of NbN films

Quantum efficiency is one of the most important performance metrics for superconducting nanowire single-photon detectors (SNSPDs). Specifically, near-infrared NbN-SNSPDs with high quantum efficiency are extremely desirable in quantum communications. However, due to the high energy gap of NbN, it is difficult to achieve a saturated quantum efficiency. In this paper, we systematically investigated the primary determinants of fabricating highly saturated NbN-SNSPD by changing the stoichiometric ratio during the growth of NbN thin films. Through electron beam lithography and reactive ion etching processes, NbN-SNSPDs with a saturated quantum efficiency were fabricated. It is worth noting that the saturated quantum efficiency is observed to be closely related to the stoichiometric ratio of NbN films. Artificially increasing the disorder in NbN films can enhance the probability of superconducting phase transition during photon detection. Our work provides a consistently simple and effective method for the fabrication of highly efficient quantum devices, which is crucial for achieving higher precision in future quantum communications.

Chemical Interaction of Hydrogen Radicals (H*) with Transition Metal Nitrides.

Transition metal nitrides (TMNs) are reported as protective coatings in reactive hydrogen environments. Although the permeation of H2 through TMN coatings is well reported, their reducibility in H* environments is less investigated. In this work, we categorize the interaction of H* with ambient exposed TiN, ZrN, HfN, VN, NbN, and TaN thin films at 700 °C into three classes. We find that in TiN and VN samples, H*-induced reduction was limited to the surface (≈ top 2 nm). Significant denitridation was observed in ZrN and HfN samples beneath the surface, along with an increase in the transition metal oxide (TMOx) fraction. Denitridation was observed in NbN and TaN samples as well, but the increase in the TMOx content was less than for ZrN and HfN. We propose a model in three steps: hydrogenation, formation of volatile species, and diffusion of subsurface atoms to the surface. We show that the interaction of H* with TiN, ZrN, HfN, VN, NbN, and TaN with partially oxidized surfaces can be explained using the preferred hydrogenation pathway (based on the work functions) and the thermodynamic driver for forming volatile species (NH3 and H2O; based on the change in Gibbs free energy).

Epitaxial growth of NbN thin films for electrodes using atomic layer deposition

Epitaxial growth of NbN thin films for electrodes using atomic layer deposition

Spin-polarisation measurement using NbN-insulator-ferromagnet tunnel junction with oxidized barrier

Spin-polarisation measurement using NbN-insulator-ferromagnet tunnel junction with oxidized barrier

Study of morphological, physical and mechanical properties of thin NbN films synthesized via DC magnetron sputtering system

PurposeNiobium Nitride (NbN) was interesting material for its applications in the medicinal tools or tools field (corresponding to saline serum media) as well as in mechanical properties. The aim of this work was depositing NbN thin films on two types of substrates (stainless steel (SS304) and silicon (100)) using plasma technique at varied powers (100–150 W).Design/methodology/approachDC magnetron sputtering technique at different powers were used to synthesis NbN films. Film structure was studied using X-ray diffraction (XRD) pattern. Rutherford elastic backscattering and energy dispersive X-ray were used to examine the deposited film composition. The films morphology was studied via atomic force microscopy and scanning electron microscopy images. Corrosion resistance of the three NbN/SS304 films was studied in 0.9% NaCl environment (physiological standard saline).FindingsAll properties could be controlled by the modification of DC power, where the crystallinity of samples was changed and consequently the corrosion and microhardness were modified, which correlated with the power. NbN film deposited at higher power (150 W) has shown better corrosion resistance (0.9% NaCl), which had smaller grain size (smoother) and was thicker.Originality/valueThe NbN films have a preferred orientation (111) matching to cubic structure phase. Corrosion resistance was enhanced for the NbN films compared to SS304 substrates (noncoating). Therefore, NbN films deposited on SS304 substrate could be applied as medicinal tools as well as in mechanical fields.

On-Chip Time-Domain Terahertz Spectroscopy of Superconducting Films below the Diffraction Limit.

Free-space time domain THz spectroscopy accesses electrodynamic responses in a frequency regime ideally matched to interacting condensed matter systems. However, THz spectroscopy is challenging when samples are physically smaller than the diffraction limit of ∼0.5 mm, as is typical, for example, in van der Waals materials and heterostructures. Here, we present an on-chip, time-domain THz spectrometer based on semiconducting photoconductive switches with a bandwidth of 200 to 750 GHz. We measure the optical conductivity of a 7.5-μm wide NbN film across the superconducting transition, demonstrating spectroscopic signatures of the superconducting gap in a sample smaller than 2% of the Rayleigh diffraction limit. Our spectrometer features an interchangeable sample architecture, making it ideal for probing superconductivity, magnetism, and charge order in strongly correlated van der Waals materials.