On Si substrates, vanadium dioxide nanocrystalline thin films (VO2 NC-TH) were prepared using the radio frequency magnetron sputtering (RF) method. The very small particles reference film was a very thin surface that appeared smooth like a coated Si wafer with the same spherical particle prominent and irregularly distributed in a thin film, according to XRD patterns with narrow peaks intensity and field emission scanning electron microscopy (FESEM) images. The current-voltage characteristic of metal-semiconductor-metal (M-S-M) VO2 NC-TH infrared photodetectors (IR-PD) in the dark and irradiated with 850 nm light and intensity was (0.17) mW/cm2. IR-PD exhibits 603, 3567, 10081, and 17751 sensitivity at 2, 3, 4, and 5 bise voltage, with increasing bias voltage increasing quantum efficiency, responsivity, and detectivity. The responsitivity and detectivity under 2, 3, 4, and 5 V bias are (0.24, 1.58, 7.92, and 14.76) A/W and (0.176, 1.03, 3.81 and 6.98) x 1012 Jones, respectively.
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