Abstract Shockley-Queisser (SQ limit) has established that a bandgap of 1.4 eV is optimal for maximum photovoltaic efficiency at room temperature. Here, we performed theoretical analysis of bandgap dependents performance under thermal stress by varying temperature from low 200 K to high 450 K. It is observed that the efficiency of device is independent of bandgap variation (in simulated range 1.4-1.8 eV) at low temperature. At high temperature efficiency shows dependence on bandgap, with wide bandgap out performing narrow bandgap solar cell. At high temperature, wide bandgap superior performance over a narrow bandgap could be explained using the intrinsic carrier density and diode saturation current. Wide bandgap absorber show lower intrinsic carrier density in turn low diode saturation current. The low value of diode saturation current for wide bandgap than narrow bandgap are responsible for superior performance of wide bandgap absorbers. It is also observed that wide bandgap solar cell showed low temperature coefficient which could also be explained by low diode saturation current for wide bandgaps. The design guidelines underlined in this work is useful for fabricating solar cell for high temperature application such as near-sun space missions.
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