Nanoelectronics Research Articles

Face-degree-based topological descriptors of germanium phosphide

In graph theory, topological indices are numerical metrics that give information about a graph’s structural traits. The face index is one such topological index that describes planar networks. Since the discovery of graphene, the genealogy of two-dimensional 2D crystals has expanded and currently contains a large variety that has all logical electrical properties required for nano electronics. Nanotechnology benefits from the use of materials that resemble Dirac, such as silicon, graphite, semiconductors, and germanene, as well as TMDC (phosporene), a transition metal dichalcogenide. In contrast with standard topological descriptors, which are numerical values utilised to characterise molecular structures, the face index presents a potentially more comprehensive method for obtaining structural details. In investigations involving quantitative structure-property relationships (QSPR), this may result in more precise predictions. We calculated the recently created face index of Germanium Phosphide (GeP) and its many shapes, including triangle, rhombus, hourglass, and concentric circles.

A Briefly Survey in Electronics System Design

In this paper, it will be tried to briefely talk about electronic system design. In these 20 years, electronic system such as other sciences has improved. From analog and digital circuits toward nano bio systems. It will be discussed the main methods of electronic system design not only in analog and digital systems but also about nano and bio electronics systems.

A New Method for Analysis of Martials Nano and Micro Electronics Technologies

This final qualifying work investigates prospective microelectronic and nano electronic materials. The purpose of the final qualifying mission is to evaluate potential manufacturing technologies and materials. In the first phase of the endeavor, potential materials for microelectronics and nanoelectronics were investigated. Graphene, fullerenes, fullerites, carbon nanotubes (CNT), nanofibers, ferrites, barium hexaferrite, nano powders, and epitaxial coatings are among these substances. An investigation into diverse methodologies pertaining to the production of auspicious materials was undertaken during the preliminary stage of the undertaking. Molecular beam epitaxy, pulsed laser deposition, spray deposition, physical vapor deposition (PVD), chemical solution deposition, gas-phase synthesis, electrospinning, chemosynthesis, detonation synthesis and electric explosion, chemical vapor deposition (CVD), spray deposition, physical vapor deposition (PVD), and the sol-gel method were among these processes.

Magnetic Nanostructure for Zigzag Graphene Nanoribbons and Application in Nano Electronics

Magnetic Nanostructure for Zigzag Graphene Nanoribbons and Application in Nano Electronics

Field-dependent THz transport nonlinearities in semiconductor nano structures.

Charge transport nonlinearities in semiconductor quantum dots and nanorods are studied. Using a density matrix formalism, we retrieve the field-dependent nonlinear mobility and show the possibility of intra-pulse gain. We further demonstrate that the dynamics of master equations can be captured in an analytical formula for the field-dependent charge carrier mobility, e.g. for two-level systems. This equation extends the linear response theory based Kubo-Greenwood result to nonlinear processes at elevated field strength, easily reached in THz transport spectroscopy. With these tools we analyze the field strength, chirp, temperature and dephasing dependence of the charge carrier mobility in the model system of CdSe quantum dots and wires. Stark broadening and Rabi splitting result in strong alterations of the mobility spectra, pronounced at low temperatures. The mobility spectra are strongly temperature and pulse shape dependent in the nonlinear regime. The findings are of immediate interest e.g. for nonlinear THz generation, conversion and amplification in 6G technology and nano electronics. Our results further enable experimentalists to fit and understand measured charge transport nonlinearities with analytical expressions and to design nanosystems with engineered material properties.

Nano Uorescences and their Application in Various Elds such as Nano Electronic Applications (Making Nano Electrodes used in Certain Electrical Circuits, Nano Photonics)

Nano Uorescences and their Application in Various Elds such as Nano Electronic Applications (Making Nano Electrodes used in Certain Electrical Circuits, Nano Photonics)

(Invited) Near-Field Optics and Its Applications in Nanophotonic Devices: A Review

In our presentation, we will offer an overview of aperture-type scanning near field optical microscopy (SNOM) – a family of nano-optical imaging techniques derived from scanning probe microscopy which are capable of subwavelength resolution, and the development of three dimensional (3D) SNOM methods undertaken by our group to locally image the distribution of the electromagnetic radiation in the proximity of nanoparticles and nano-objects.[1] We will discuss a few applications in which we took advantage of 3D-SNOM to design specific optical nanosystems for light harvesting device applications. Specific case studies that will be presented include the design of plasmonic thin-film solar cells enhanced by random arrays of copper nanoparticles,[2] and the use of 3D-SNOM for characterizing evanescent waveguides self-assembled from of copper nanoparticles assembled on thin films of graphene.[3] In the final part of our talk, we will we present near-field scanning thermoreflectance imaging (NeSTRI), a new pump-probe technique invented in our group (see Figure 1) in which an aperture-type SNOM is used to contactlessly determine the thermal conductivity of inhomogeneous thin films and low-dimensional systems at the nanoscale for heat-spreading and thermoelectric applications.[4,5] These examples well represent the versatility of SNOM imaging and its potential for designing an even wider family of nano-optical devices.[1] P Bazylewski, S Ezugwu, G Fanchini, Applied Sciences 7 (2017) 973[2] S Ezugwu, H Ye, G Fanchini, Nanoscale 7 (2016) 252-260[3] T Ouyang, A Akbari-Sharbaf, J Park, R Bauld, MG Cottam, G Fanchini, RSC Advances 5 (2015) 98814-98821[4] S Ezugwu, S Kazemian, DYW Choi, G Fanchini, Nanoscale 9 (2017) 4097-4106[5] S Kazemian, S Ezugwu, G Fanchini, Proc. SPIE 10926, Quantum Sensing and Nano Electronics and Photonics XVI, 109260L (1 February 2019); doi: 10.1117/12.2509828 Figure 1

Application of Machine Learning Algorithm for Defect Analysis in Semiconductors Using High Resolved Scanning Acoustic Microscopy

Scanning Acoustic Microscopy is a dedicated powerful technology in NDT to analyze and characterize bonded interfaces for different technologies. As the complexity of the semiconductor package grows, even seemingly insignificant faults become quite important. Main applications include detection of voids, inclusions and delaminated areas in bonding interfaces and thickness variations in layer structures. The SAM operates with the pulse reflection method. The acoustic lens transforms high frequency electromagnetic vibrations that are transmitted inside the lens as a planar parallel wave field. Through the coupling medium, which is water, the cavity concentrates the sound field on the sample. The sound pulses reflected from the sample are gathered up by the acoustic lens and are converted into electromagnetic pulses by the transducer. These pulses are reconstructed into images with defined gray values. Pixels with certain gray levels are used to depict pulses.New developments in SAM combine high throughput inspection and high resolution down to the sub-micrometer range.The wafer bow is quickly eliminated by altering the array transducer focus point throughout the entire scanning procedure. New techniques for SAM's bonded interface protection keep the wafer almost completely dry throughout inspection. In order to discover and categorize failures with the least amount of data, research focuses on deep learning networks and scanning acoustic microscopes for automated failure assessment. High speed automated wafer-level inspections were made possible by the development of image and signal-based machine learning techniques. These operations can be carried out at both the wafer level and the die level without the need for sample preparation.The automatic handling, scanning, drying, and separation of good wafers from defected wafers based on acoustic data made possible by technological developments in SAM systems. Despite the high sensitivity, minute variations in the reflected signal that would point to a flaw can be lost during image reconstruction. More emphasis is being placed on creating AI-based algorithms for highly accurate automated signal interpretation for failure detection as a result of recent breakthroughs in AI (Artificial Intelligence). Since it requires less human work, automated failure analysis is becoming more and more popular for the detection and qualification of wafer bond integrity. This new technique trains the network for automated fault prediction using raw A-Scan data. In the first phase, die level prediction is reviewed and in the later phase, a wafer-level high volume inspection is performed. Combining SAM with an A-Scan-based Deep Learning approach primarily benefits non-destructive analysis with less labelling effort and training time. With minimal human effort, this process flow is perfect for automated high-volume inspection.SAM also uses image based machine learning approach for automated defect analysis. The U-net machine-learning algorithm serves as the foundation for the integrated image analysis program. Deep Learning technologies is integrated into a new modular image analysis (MIA) architecture with built-up integrated pipeline for Label Studio Software-based Deep Learning activities (labelling, training, analysis). The built-up pipeline is used to identify, train, and test various classes of defect in a bonded wafer. This method employs model confidence to manually mark marginal and defective predictions.High resolution and high throughput analysis for the defect characterization and defect analysis of various types of bonded wafers is improved in scanning acoustic microscopes using the array transducers, signal processing methods like SAFT, Wavelet filtering techniques, Artificial intelligence methods based on both image and signal. With all these advanced technologies, Scanning Acoustic Microscopy is capable of inspection of wafer bond integrity, TSV characterization, 3D package evaluation, Wafer Level Chip Scale Packaging (WL-CSP) and Crack inspection. For the metrology of mass production, from initial research and development, our equipment services and software algorithms assist manufacturers of nano electronics in better defect analysis and material characterization. Next Generation transducers were designed and developed in particular for WL-CSP applications.

(Invited) Modification of Properties of N- and B-Doped Graphene by Heteroatom Functionalization

Since its discovery in 2004, the graphene has attracted great attention owing to its unique chemical bonding structure, which has excellent chemical, thermal, mechanical, electrical and optical properties. Due to the graphene being a zero band-gap material, it has a limited development in the field of nano electronics. Therefore, to broaden its application scope, it is very important to carry out a study on opening the band gap of graphene. One general strategy for achieving this goal is doping graphene with heteroatoms; in this approach, the properties of graphene are controlled by the nature of the dopant elements and by the percentage of doping being N-doped graphene is of n-type doping, while B-doped graphene is of p-type doping. Compared with that of the intrinsic graphene, the Fermi level of N doped graphene moves up 5 eV; on the contrary, the Fermi level of B doped graphene moves down 3 eV.However, it would be convenient to develop additional tools to achieve further control of the electronic properties of graphene materials. In this context, one of the possibilities would be to functionalize those dopant elements on the graphene sheet in such a way that the electron density and electronegativity of the heteroatom are effectively controlled. This objective could, in principle, be achieved by applying concepts from organic chemistry. Organic synthesis offers proven chemical reactions that are applicable to different types of nitrogen and boron compounds.In the work described here, we´ll present our results on the covalent functionalization of the nitrogen atom or boron atom of N-doped and B-doped graphene. In a simple strategy, electron-donating and -withdrawing groups present on aromatic rings can be used to modulate the electronic properties of the material.

Insinuation of Arrhenius Energy and Solar Radiation on Electrical Conducting Williamson Nano Fluids Flow with Swimming Microorganism: Completion of Buongiorno's Model

The enriched thermal mechanisms and progressive of nanomaterial has enthused scientists to give devotion to this area in current days. The versatile and synthesizing utilization of such particles embrace energy production, solar systems, heating and cooling monitoring processes, renewable energy systems, cancer treatments, hybrid-powered motors and Nano electronics. Furthermore, in this era of biotechnology and bioengineering, the bio convection of Nano fluids provides for some enthralling applications, such as enzymes, biosensors and biofuels. With such magnetic applications and attentions. A mathematical model is presented for evaluating the electrical conducting Williamson nano fluid with heat and mass transfer over a porous stretched sheet in the existence of bioconvection. The bioconvection of swimming microorganisms, thermal radiation,thermal conductivity and Arrhenius energy are new facets of this investigation. The higher order non-linear governing partial differential equations (PDEs) are solved by applying appropriate similarity variables and resulting couple of ordinary differential equations (ODEs) is produced. The developing set of ODEs is solved numerically by utilizing well known shooting technique with ND solve command in Wolfram MATHEMATICA and compare the result with pvb4c code in MATLAB. The graphs for different physical quantities of interest together with non-dimension velocity, temperature, concentration and density of micro-organisms profiles are discovered for involving parameters like .magnetic parameter, Brownian motion, Rayleigh number, Peclet number, Bioconvective Lewis number, parameter of thermophoresis and buoyancy ratio parameter. The influence of numerous parameters on flow and heat transfer characteristics are debated.

Design and Testing of Digital Logic Gates Using HCS Macro-Model

Single Electron Transistor (SET) has become very popular in industry as well as in academia. As SET can control the tunneling of electrons one by one through the channel so that power dissipation is very low as compared to conventional Complementary Metal Oxide Semiconductor (CMOS), though it has high speed, high gain like properties. So, the hybridization of CMOS with SETcan be used in modern Very Large Scale Integration (VLSI) circuit design, and this technique is very popular as Hybrid CMOS–SET (HCS) which uses less power with high speed of response. But the model requires two distinct simulators, such as, Simulation Program with Integrated Circuit Emphasis (SPICE) for CMOS and SIMON or Korea Single Electron Circuit Simulator (KOSEC) or Monte Carlo Single Electronics Simulator (MOSEC) or Single-Electron Nano Electronic Circuit Analyzer (SENECA) for SET, to simulate a single HCS model. To overcome this problem of HCS, macro- modelling of SET has been introduced by different researchers which can be simulated by using MATLAB with SIMULINK, SPICE and so on. In this present paper, macro model of SET has been incorporated with CMOS so that it can be simulated using a single software and this technique has been used to develop different logic circuits and the output can be controlled by the individual components of SET macro model. The simulation results show that the proposed model also consumes low power (0.275 nW to 0.55 nW) with high speed which can be used in VLSI design.

An Intelligent Irrigation System and Prediction of Environmental Weather Based on Nano Electronics and Internet of Things Devices

Internet of Things (IoT) shows a significant aspect in day-to-day life like Health monitoring, Environmental monitoring, vehicle monitoring, crop monitoring, material science and other applications. The proposed method objective is to monitor the environmental factors periodically on analysing the data collected from sensors and Nano electronics devices. IoT dependent smart irrigation system could aids in attaining the optimal resource utilization in the precise farming. The proposed system intelligence depends on smarter algorithm that considers sensed data with weather forecast parameters such as moisture, air temperature, humidity, precipitation in near future. Primarily, the input data is acquired from sensors placed at transmitter side that is connected to microcontroller and attained data is thus stored in the cloud paradigm from which the data is monitored and processed for making further decision. At the side of receiver module, the data collected is thus preprocessed. The features are extracted using Adaptive Fisher discriminant analysis. The optimum best features were chosen by employing optimization process with the help of multi-strategic gradient Salp swarm optimization (MSG-SSOA). Finally, the Deep residual LeNet classifier is employed for the classification of sensed data. Consequently, for the effectual performance assessment of suggested strategy the existing methods are related with proposed methods to validate the proposed system effectiveness.

Analysis of carbon nanotube for low power nano electronics applications

The implementation of nanoelectronic circuits depends on technologies such as Complementary Metal-Oxide Semiconductor (CMOS) or Bipolar CMOS (BICMOS), and the length of the channel can be reduced up to a certain limit. Due to the generation of various errors nanomaterials can be an alternative solution for circuit design. In the field of nanotechnology, Carbon Nanotubes (CNTs) have become a notable and remarkable invention. Their structure is very similar to that of graphite, and its small size, lightweight, high strength, and good conductivity make them ideal building blocks for future technologies. CNTs hold great promise for being the catalyst for the next technological revolution. Today, a broad range of processes is available to produce various types of CNTs, depending on the rolling times of graphite sheets. This review paper sheds light on the different types of CNTs, their properties, methods of synthesis such as arc discharge and chemical vapor deposition, and their applications. To achieve this goal, this paper provides a review that aims to define the state-of-the-art in this field from a novel and unified perspective while elaborating insights of current developments and emerging trends.

Removal of Salt and Pepper Noise Using Hybrid Adaptive Switching Median Filter with Ant Colony Optimization Technique in Nano Electronic Applications

Background: Restoration of noisy images from the salt and pepper noise is an interesting area in the field of image processing. The restoration process can be done using various filtering algorithms. The restoration process should not affect the pixels of the original image. The problem of the existing work persists as the increase in the error rate while the dimensions as well as the image format changes. The proposed work consists of Hybrid Adaptive Switching median filtering (HASMF). The hybrid technique corrupted images’ high-density salt and pepper noise removal using Ant colony Optimization technique. This hybrid technique would remove the high-density salt and pepper noise from the corrupted images. The noisy pixel value from the corrupted images is identified and selected using the Ant Colony Optimization technique (ACO). The identified corrupted value can be replaced using the Adaptive Switching Median Filter. The switching process is carried out using the pixel by pixel with the normalized median values. The noisy pixels are identified and selected using Ant colony Optimization. The optimized values are subjected to the filtering process. The proposed method decreases the salt and pepper noise within the original image. The hybrid design approach was used in the proposed study, which used 45 nm technology combined with a Verilog-A model-based circuit that was implemented using Spintronic. It was discovered that the suggested changed task had less latency, used less space, and dissipated less power than the original. Furthermore, it was discovered that designed memory arrays were both energy and space-efficient. It does not affect the normal pixels within the original image. The comparison process has been made with the various existing algorithms such as Median Filter (MF), Modified Decision Based Unsymmetrical Trimmed Median Filter (MDBUTMF). The proposed method has overcome the various performance metrics such as Peak Signal Noise Ratio (PSNR), Mean Square Error (MSE), and Structural Similarity Index (SSIM). The results obtained have shown the significant results in terms of object measures as well as visual perception of the denoised image.

Analysis of carbon nanotube for low power nano electronics applications

In the area of nanotechnology, carbon nanotubes are a notable and remarkable invention. Its structure is much similar to the structure of graphite. CNTs are small in size, light in weight, have good strength, and have good conductivity, making them the building blocks of futuristic new technologies. CNTs have promised to be the catalyst for the next revolution in technology. A broad range of processes are available to produce various types of CNTs, depending on the rolling times of graphite sheets. In this paper, different types of CNTs, their properties, ways of synthesis such as the arc discharge method and chemical vapor deposition, and application have been covered. Outlining their respective advantages and challenges. SWCNTs exhibit high carrier mobilities and tunable bandgaps, making them suitable for transistor devices and interconnects in integrated circuits. DWCNTs offer enhanced mechanical stability and electrical conductivity, catering to applications in flexible electronics and energy storage devices. MWCNTs, though lacking distinct properties of SWCNTs and DWCNTs, find utility in composites, sensors, and biomedical devices due to their ease of synthesis and lower cost.

Performance Analysis and Optimization of Asymmetric Front and Back Pi Gates with Dual Material in Gallium Nitride High Electron Mobility Transistor for Nano Electronics Application

Performance Analysis and Optimization of Asymmetric Front and Back Pi Gates with Dual Material in Gallium Nitride High Electron Mobility Transistor for Nano Electronics Application

Going green and sustainable with graphene: A wider prospect

Graphene widely addressed as “wonder material”, is a simple two-dimensional structure of carbon but with unbelievable mechanical strength and flexibility. It has wide range usages in the fields of bio sensing, medicine, diagnostics, energy, electronics, composites, coatings, Nano electronics, ultra-sensors, Li-ion batteries, photo catalysis and fuel cells etc. Graphene is at par than many useful materials like bamboo fiber, silicane, copper, steel, ceramic etc. Its properties magnify many folds when it is combined to form composites. Owing to astounding characteristics, graphene is sustainable for future as its suitable progress in its field, would considerably reduce the energy consumption and production cost.This article summarizes the properties, uses, various synthesis routes for graphene production and their viability. Graphene synthesis approaches are selected based on its applications. High quality up-scaling graphene production still is of utmost significance these days. Additionally viable synthesis techniques to produce graphene with green, recyclable, eco-friendly methods without any metallic or chemical impurities will be a blessing for developing industries and in turn a brighter future.

Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study

In this article, we investigate the effect of variability in p-type nanowire tunnel FET (TFET) using quantum mechanical transport simulations. The simulations have been carried out using the Nano Electronics Simulation Software (NESS) from the University of Glasgow. Random discrete dopants (RDDs) and work-function variations (WFV) have been investigated in the simulations. Our statistical simulations reveal that key figures of merit (FoMs) such as the current variability generally decrease as the gate voltage decreases, the threshold voltage variability increases as the threshold current increases, and the dependences of these FoM variabilities on criteria become stronger with the switch characteristic ameliorated. Furthermore, it is interesting to find that the band offset in heterostructure can more or less alleviate the current variability, especially around the OFF-state.

Oxygen annealing induced enhancement in output characteristics of ZnO based flexible piezoelectric nanogenerators

Piezoelectric nanogenerators (PENG), which convert random mechanical energy into electrical energy, have attracted considerable attention due to their application potential in self-powered micro and nano electronics devices, wearable electronics, sensors etc. PENGs based on ZnO nanostructures are particularly important due to their low cost, flexibility and bio-compatibility. Flexible PENGs based on ZnO nanostructures dispersed in Polydimethylsiloxane (PDMS) in ITO/ZnO:PDMS/ITO device configuration were fabricated and characterized for vibration energy harvesting applications. Surfactant free ZnO nanostructures were grown using co-precipitation route and ZnO:PDMS nano-composite films with ZnO content varying in the range of 1.5–7.5 wt% were deposited on ITO/PET substrates for PENG fabrication. The maximum open circuit voltage and short circuit current of ~ 2.5 V and ~ 4 µA respectively were obtained in PENG fabricated with 6 wt% ZnO. The output characteristics were further enhanced to 5 V and 6 µA with flowing oxygen ambient annealing of ZnO nanostructures generating an instantaneous power density of ~9.55 µWcm −2 . X-ray photoelectron spectroscopy studies confirmed reduction in oxygen vacancy and enhancement in oxygen interstitial concentrations on oxygen annealing which leads to the suppression of free carrier induced internal screening in ZnO nanostructures. This suppression of internal screening effect is the possible reason for the enhancement in output characteristics of ZnO:PDMS PENG fabricated with oxygen annealed ZnO nanostructures. The electrical energy generated by the ZnO:PDMS PENG was rectified and effectively stored in capacitors and used to power LEDs and LCD display. • ZnO nanostructures were grown by co-precipitation method with air and oxygen annealing. • ZnO:PDMS PENG with variable wt% of ZnO in PDMS were fabricated in ITO/ZnO:PDMS/ITO configuration. • The output performance of ZnO:PDMS PENG is improved significantly by annealing ZnO nanostructures in flowing oxygen ambient. • XPS established a correlation between the oxygen related point defects in ZnO and output characteristics of ZnO based PENG. • The output energy from ZnO:PDMS PENG was rectified and effectively stored in capacitor to flash LEDs and LCD display.

High Precision 3D Printing for Micro to Nano Scale Biomedical and Electronic Devices.

Three dimensional printing (3DP), or additive manufacturing, is an exponentially growing process in the fabrication of various technologies with applications in sectors such as electronics, biomedical, pharmaceutical and tissue engineering. Micro and nano scale printing is encouraging the innovation of the aforementioned sectors, due to the ability to control design, material and chemical properties at a highly precise level, which is advantageous in creating a high surface area to volume ratio and altering the overall products’ mechanical and physical properties. In this review, micro/-nano printing technology, mainly related to lithography, inkjet and electrohydrodynamic (EHD) printing and their biomedical and electronic applications will be discussed. The current limitations to micro/-nano printing methods will be examined, covering the difficulty in achieving controlled structures at the miniscule micro and nano scale required for specific applications.