MOSFET Switch Research Articles

Fault identification and isolation for components of photovoltaic energy storage system based on IEEE21451 standard

AbstractMajor faults arise in power converters mainly due to faulty MOSFET switches, diode and electrolyte capacitors. Converter with fault tolerant circuit improves the overall reliability of DC‐DC converter. We develop a self‐test configuration that identifies the faults in analog to digital converter (ADC), DC to DC converter and battery. IEEE 21451 standard‐based interface is implemented to develop a knowledge‐based smart controller. The centralized controller is performed to execute the maximum power point tracking (MPPT). Photovoltaic (PV) energy storage system is constructing to prove how the converter’s sensing, processing, and actuation capabilities in actual time may allow effective fault identification. The simulation result of the proposed method is executed in the MATLAB/Simulink working platform. The experimental results are implemented with field‐programmable gate array of Spartan‐6 Xilinx. The simulation as well as experimental result shows different fault identification in PV with energy storage system. Battery is provided through 12 V/4.5 Ah battery. The simulation and experimental results make ensure that the proposed method reveals its proficiency. It shows that the received results may fault identification at less than the period of one switching usually by 100 ms with suggested method.

Total-dose Effects on Power MOSFET in SEPIC Converter for Nanosatellite Applications

Background: Power converters used in nanosatellite application required to be more tolerant to radiations including proton, electron and heavy-ion radiation. Methods: A Single-Ended Primary Inductance Converter (SEPIC) is selected for the nanosatellite application because of the availability to step up and down the input voltage as well as having a non-inverting polarity between the input and output voltage. In this paper, remodeled SEPIC converter proposed with an improved performance at radiation environment to work for nanosatellite application. In addition, the analysis is carried out for the irradiated power MOSFET in SEPIC converter to check its impact on converter behavior. Results: Experiments conducted with the help of power MOSFET switch used in converter, irradiated with Cobalt60 gamma ray dose level from 50krad to 300krad and output characteristics analyzed by chancing the duty cycle of converter. Investigations shown that conventional converter output characteristics were virtually constant from 10% to 60% duty cycle when different radiated MOSFETs used in the converter. Conclusion: The electrical characteristics started to fluctuate at 60% duty cycle and onwards, while the remodeled converter circuit was less distorted when increasing the radiation dose.

Design and Implementation of High-Performance Single-Input Multi-Output High Step-up Non-Isolated DC–DC Converter Topology

Due to the rapid developments in the field of electric vehicles (EVs), it is necessary to find the alternate source to power the EVs. The energy sources, such as fuel cell (FC) and solar photovoltaics (PV), are preferred; however, these sources produce low output voltage, and it is not sufficient to drive the EVs. The DC–DC converters are used to boost the voltage to the required voltage of the EVs; in addition, the EVs also require multiple output terminals to deliver the power to various parts of the system. Hence, in this paper, a new DC–DC converter topology is proposed to produce the three different output voltages from the single input source. The proposed converter has features such as high voltage gain with less duty cycle, reduced number of components, less power loss, and hence the efficiency. Moreover, the converter is operated with a single MOSFET switch with low [Formula: see text] due to its less voltage stress and high voltage gain. The required voltage gain is achieved by the super-lift (SL) technique, and the converter is also provided with a passive clamp circuit to recover the leakage energy of the coupled inductor. The theoretical analysis of the proposed converter is verified through the experimental prototype of 300 W, and the result proves the converter may be suitable for EV applications and the applications which require multi-level output voltage with a high voltage gain.

Single Phase Power Factor Improvement Based Instantaneous Power P Q Theorm

This paper presents how to harmonic disturbance reduce on single phase power system. One of the most popular method is harmonic signal extraction with instantaneous power p q theorm. This algorithm implemented to harmonic cencellation by active power filter circuit be paralled with the non linier load. This filter generates of current compensation that are injected into the grid to improve power quality. This Filter is built by an inverter circuit that consists of a mosfet switch array and capasitor mounted on DC link side. Two types of loads are resitive inductive and resistive capasitive produce of current source wave form that close pure sinusoid. Simulation results show the THD index fell to the level of 2.7% in accordance with IEEE 519 standard rules which states that the harmonics content of the power system may occur below 4%, indicating that the power system can be categorized as having good quality.

Design and Development of Non-Isolated Modified SEPIC DC-DC Converter Topology for High-Step-Up Applications: Investigation and Hardware Implementation

A new non-isolated modified SEPIC front-end dc-dc converter for the low power system is proposed in this paper, and this converter is the next level of the traditional SEPIC converter with additional devices, such as two diodes and splitting of the output capacitor into two equal parts. The circuit topology proposed in this paper is formulated by combining the boost structure with the traditional SEPIC converter. Therefore, the proposed converter has the benefit of the SEPIC converter, such as continuous input current. The proposed circuit structure also improves the features, such as high voltage gain and high conversion efficiency. The converter comprises one MOSFET switch, one coupled inductor, three diodes, and two capacitors, including the output capacitor. The converter effectively recovers the leakage energy of the coupled inductor through the passive clamp circuit. The operation of the proposed converter is explained in continuous conduction mode (CCM) and discontinuous conduction mode (DCM). The required voltage gain of the converter can be acquired by adjusting the coupled inductor turn’s ratio along with the additional devices at less duty cycle of the switch. The simulation of the proposed converter under CCM is carried out, and an experimental prototype of 100 W, 25 V/200 V is made, and the experimental outcomes are presented to validate the theoretical discussions of the proposed converter. The operating performance of the proposed converter is compared with the converters discussed in the literature. The proposed converter can be extended by connecting voltage multiplier (VM) cell circuits to get the ultra-high voltage gain.

Active cell balancing of Li-Ion batteries using single capacitor and single LC series resonant circuit

In this paper a novel single series resonant tank and capacitor converter based voltage balancing circuit for series supercapacitor string and battery cells string is presented. It recognizes the balancing circuit which recovered the maximum energy and zero voltage gap between cells in a series supercapacitor system or battery system. This balancing circuit not only inherits the improvement of conventional single series resonant converter based balancing system, but also recovers the drawback of switching loss, conduction loss and voltage gap between cell strings. All MOSFET switches are controlled by a pair of complementary PWM signals. Also the resonant tank and parallel capacitor operate between the two mode of charging and discharging. This voltage balancing circuit has shown promising result to be used in battery management system.

Design and application of low power switch IC

Based on PSM (pulse skip modulation) mode, this paper analyzes and optimizes the system, designs a low-power switching power supply chip, and integrates the high-voltage power MOSFET switch and power controller in one device. Different from the traditional PWM (pulse width modulator) controller, the output voltage is regulated by simple on / off control without loop compensation. The controller consists of oscillator, feedback circuit, 5.8V regulator, bypass pin under voltage circuit, over temperature protection, frequency jitter, current limiting circuit and leading edge blanking of integrated 700V power MOSFET. The chip can be applied to mobile phones, digital cameras, and chargers of low-power electrical appliances, etc.

Design of integratedsinglestagephotovoltaic solar inverter(stand-alone)

The extremely high demand for energy and increased demand for fossil fuels has led us to shift our concentration towards new and renewable sources of energy, which are seemingly unlimited sources. They are zero-carbon emitting, thus eco-friendly for the environment. Several issues have been addressed before regarding different topologies for standalone and grid connected inverters with and without microcontroller circuits. Some of them have addressed the introduction of multilevel inverter input using buck boost converters for improving the efficiencies of the output circuit. This paper enlightens the design of single stage photovoltaic inverter which is needed to run AC appliances as loads, which are mostly used as consumable purposes. The design implements MOSFETs as switching devices, which have considerably high switching frequency of 40 KHz, power diodes, inductors, capacitors, solar panel and a battery. The proposed inverter converts the DC output of the PV module into AC directly while maintaining the stability in the output voltage. PSIM software has been used for inverter design. The improved efficiency resulting in 75-90% is due to the minimized voltage drop over the inductor. High frequency operation of the MOSFET switch enables minimized switching losses.

A New Nonisolated High-Step-Up DC–DC Converter Topology with High Voltage Gain Using Voltage Multiplier Cell Circuit for Solar Photovoltaic System Applications

The solar photovoltaic (PV) source is preferred to be functioned at low voltages. The practical systems such as grid-tied systems require a high output voltage causing a reduction in conversion efficiency. To handle this problem, this paper presents a new nonisolated boost DC–DC converter with a single switch suitable for solar PV applications. This converter comprises dual voltage multiplier (VM) cells, leakage energy recovery scheme, and coupled inductor (CI) techniques to get the desired output voltage from the converter. The double-clamp capacitors are connected to the primary side of the CI. The clamp capacitors can share the current through CI, and it ensures that the leakage inductance energy of CI can be recovered, leading to an expansion in the converter voltage gain and conversion efficiency. In addition, the clamp circuit clamps the voltage stress of the MOSFET switch, and the clamp capacitors will discharge at a specific time to increase the converter gain. A high duty cycle is not necessary for getting a high voltage gain, which avoids the diode reverse recovery issues. The converter can be operated in both continuous conduction mode (CCM) and discontinuous conduction mode (DCM). A 500-W experimental prototype is developed for experimental validation, and the supporting simulation results are presented. The maximum efficiency of the converter is 93.94%, and, at full load, the efficiency is 92.55%.

Comparision of Voltage Stress Across the MOSFET Switch of a Flyback Converter with Various Snubbers

A Flyback converter is a simple switch-mode power supply that can be used to generate a DC output from either an AC or DC input. The converter switch is the most critical part of any converter. The voltage stress across the switch is a major issue as the high voltage spikes occur due to interaction between its output capacitance and the leakage inductance of the transformer. These spikes can be reduced with various snubbers like conventional tertiary winding, Resistor Capacitor and Diode(RCD) snubber, energy regenerative snubber and an active clamp snubber. This paper aims to analyze and compare the voltage stress across the MOSFET switch of Flyback converter with various snubber circuits.

Design of a High Voltage Pulse Generator with Large Width Adjusting Range for Tumor Treatment

The unique biological effects stimulated by short pulsed electric field have many applications in tumor treatment, such as irreversible electroporation, electrochemotherapy, gene transfection and immune therapy. These biological effects require high voltage pulses with different pulse width in the range from nanoseconds to hundreds of microseconds. To fulfill this requirement, a compact high voltage pulse generator has been designed based on a switchable capacitor array and a SiC MOSFET switching array. The proposed pulse generator has one output channel with an adjustable pulse width from 100 ns to 100 µs, an amplitude range from 0 kV to 2 kV, a repetition rate less than 1.2 kHz and a voltage drop less than 5%. The mechanism of the stacked switches circuit was investigated, in connection with a switchable capacitor array. The introduction of a switchable capacitor array extends the pulse width from nanosecond scale and microsecond scale compared with other similar design methods. The pulse generator has been designed in simulation and implemented in experiment. The developed pulse generator provides a convenient and economical tool for the further studies of the unique biological effects stimulated by different pulsed electric fields for tumor treatment.

Online Detection of MOSFET Gate Oxide Degradation in a Three-Phase Inverter-Drive Application

Failure in electrical machines or their drives can be catastrophic in safety-critical applications. Both silicon and silicon-carbide MOSFETs experience gate oxide degradation that leads to device failure. It is ideal to detect gate oxide degradation early using noninvasive, online techniques. In this article, an online gate oxide degradation detection method is proposed to reduce the reliability concern of using MOSFET switching devices. Gate oxide degradation causes a delay in phase current rise. Although the delay is short, it affects the voltage commands calculated in the controller. It is shown through analysis, simulation, and experiment that space vector pulsewidth modulation (SVPWM) duty cycle commands reflect the delay in phase current rise caused by gate oxide degradation.

Toward an In-Depth Understanding of the Commutation Processes in a SiC MOSFET Switching Cell Including Parasitic Elements

This article provides in-depth insight into the commutation processes of high-speed SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s and investigates how they are influenced by various parasitic inductances. The switching dynamics of wide-bandgap power semiconductor devices are significantly larger compared to those of silicon devices. Therefore, the parasitic elements in the switching cell become increasingly important, as they limit the current and voltage slopes and cause oscillations. A thorough understanding of these effects is necessary for the design of highly efficient and integrated next-generation power electronic converters. However, the means of modeling hard-switched transitions, e.g., equivalent circuits, have not been adapted sufficiently compared to existing models on relatively slow-switching devices. This article presents the theory of commutation in high-speed semiconductor devices and outlines its key differences to traditional commutation models. These new insights are used to analyze the influence of parasitic inductances on the switching transitions. The theory is validated experimentally by double-pulse tests with variable parasitic inductances, performed on a test printed circuit board equipped with SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s. The results are in good agreement with the theoretical findings.

SiC-Based Bidirectional Multilevel High-Voltage Gain Switched-Capacitor Resonant Converter with Improved Efficiency

This paper presents the research results of the bidirectional multilevel resonant switched capacitor converter (MRSCC). The converter can achieve a high voltage ratio in multilevel topology, which limits the voltage stress on switches and is able to operate with high power efficiency. The converter can be applied as an interconnector between DC voltage systems used for various applications. This paper presents a method that significantly improves the efficiency of the MSRCC through topology modification. Furthermore, the feasibility of the converter was demonstrated with the use of SiC and Si MOSFET switches, together with suitable passive components. It was demonstrated that the proposed modification of the topology makes the converter very efficient in SiC-based ones and can significantly improve the efficiency of Si MOSFET converters. The series of test results of the SiC-based converter is a novel aspect presented in this paper and shows promising achievements of efficiency. The results were obtained from the laboratory setup of 5 kW and 0.5/2 kV MRSCC. To demonstrate the bidirectional operation of the converter, a back-to-back setup (0.5/2/0.5 kV) was used. It also demonstrates that such a high-voltage gain converter can be accurately tested with the use of laboratory equipment with a typical voltage range.

Resonance-Based Optimized Buck LED Driver Using Unequal Turn Ratio Coupled Inductance

Losses in light-emitting-diode (LED) driver cause increasing temperature and shorten their lifespan. Therefore, improving the efficiency of LED drivers not only saves energy but also is indispensable to increase their lifespan. In this article, a new LED driver topology is proposed to improve the performance of valley switching by decreasing the mosfet switching losses. The proposed topology is designed in a way that the mosfet works at the significantly lower switching and conduction losses in compared with conventional LED drivers. It elaborates how the proposed topology also improves the overall efficiency by decreasing power losses in other main elements of the driver, including inductance and diode. In addition, a new valley switching implementation is introduced for the new converter, which decreases the cost and dimension of the LED drivers. The experimental results confirm the high efficient operation of the proposed LED driver by reaching the efficiency up to 97% at a wide range of operating voltage.

A Digital Controlled Pulse Generator for a Possible Tumor Therapy Combining Irreversible Electroporation With Nanosecond Pulse Stimulation.

The irreversible electroporation with microsecond electric pulses is a new ablation technique adopted in the tumor therapy worldwide. On the other hand, the nsPEF (nanosecond pulsed electric field) has been proved to provide a means to induce immunogenic cell death and elicits antitumor immunity, which is under intensive in-vitro and in-vivo studies and in clinical trials. Normally, one needs two different types of electric pulse generators for producing the pulses in the ranges of nanosecond and microsecond, respectively. In order to realize these two types of tumor treatments in complementary and optimize electrical pulse parameters, we have developed a compact high-voltage pulse generator with a wide pulse width tuning range, based on a capacitor discharging configuration digitally controlled by a silicon carbide MOSFET switching array through a pair of optic-coupler drivers. The developed digital pulse generator is capable of adjusting: pulse width over 100-100μs, voltage over 0-2kV and repetition rate up to 1.2 kHz. The pulse generator is designed in simulation, implemented and verified in experiments. The pulse generator is shown to deliver a complementary treatment on Murine melanoma B16 cell lines, i.e., triggering the cell early apoptosis under the 300ns pulse stimulation while a complete killing under the 100ns pulses. The pulse generator is further demonstrated to induce antitumor immunity in a preliminary in vivo study on the mice model.

A High-Efficiency ZVS Wireless Power Transfer System for Electric Vehicle Charging WithVariable Angle Phase Shift Control

Tight current/voltage regulation and high efficiency are the fundamental objectives of wireless power transfer systems (WPTSs) for electric vehicle (EV) chargers. To achieve high efficiency and minimize electromagnetic interference, it is necessary to ensure zero-voltage switching (ZVS) of all MOSFET switches. However, such objectives often necessitate auxiliary dc–dc converters or additional resonant components, which increases system costs and complexity. In this article, a high-efficiency WPTS is implemented without any additional converter or resonant component. Only two H-bridge converters, i.e., an inverter and an active rectifier (AR), are employed. The AR utilizes the variable angle phase shift control (VAPSC) that achieves accurate current/voltage regulation and ZVS simultaneously. Moreover, the optimal power angle range (OPAR) is identified, within which the system efficiency is further enhanced through power loss analysis. Subsequently, the proposed WPTS is regulated via a noncommunication double-loop control strategy, which gets rid of communication interferences and noises. The maximum transfer efficiency can be obtained by adjusting the ZVS angle in OPAR. Finally, the experimental results obtained from a 500-W WPTS prototype verify the theoretical analysis. Under the case of a coupling coefficient $k=0.2$ , the maximum transfer efficiency reaches 95.2% at rated power.

Switching Loss Calculation of Power MOSFET using the Estimation Technique

An accurate analytical model is very important to measure the switching losses of Power MOSFET. The perfect estimation of Power MOSFET switching loss is very difficult to predict the efficiency of the power electronics circuit. This paper investigates the basic internal physics of the Power MOSFET device and proposed the best possible analytical model to calculate the power loss. The pre-existing widely accepted power loss calculation method is found to be useless and inaccurate. In addition, the result of the pre-existing method is overestimated to apply approximating switching time. This paper focused on new charge parameters specification and switching time estimation technique to measure less erroneous switching losses of Power MOSFET. Keywords: DESSIS, Estimation technique, Power MOSFET, Switching loss, Sabre RD

High-performance single-input three-output DC–DC high gain converter for fuel cell-based electric vehicles

The electric vehicle (EV) requirement has various glitches and solutions in EV technology. Alternate energy that delivers the required power to the EVs is derived from the fuel cell with high performance. Nevertheless, the output voltage obtained from the fuel cell system is very less, and it is not enough to drive the motor of the EVs. The DC–DC converter increases the output voltage of the fuel cell system, and the EV also requires a different output voltage for the entire system. The DC–DC converter for fuel cell-based EVs requires high voltage gain with high conversion efficiency. However, the converter based on single-input three-output (SITO) DC–DC unidirectional converter can reduce loss and the cost of the system, and hence the overall efficiency. In this paper, a new single power-switch-based SITO converter topology is proposed to improve the voltage gain and conversion efficiency. The converter presented in this paper acts as a front-end DC–DC converter for the DC–AC inverter, and it supplies power to the auxiliary DC loads or for charging the auxiliary battery in EV. The converter has a single-stage voltage multiplier cell with a voltage clamp circuit to improve the voltage gain with soft-switching to reduce the loss, and hence the efficiency. The proposed converter is operated with a single MOSFET switch which delivers three different output levels with less voltage stress across the switch is the main feature of the proposed converter. The theoretical analysis is validated through the experimental results, and results verify that the proposed converter is best suitable for EV applications.

Study on differential mode conducted interference of trigger circuit of high-power thyristors in pulsed power supply

The trigger circuits of high-power thyristors in pulsed power supply (PPS) contain a large number of pulse transformers, switching MOSFETs (SMFETs) and other passive devices. Fast on-off of SMFETs and pulse transformers often lead to differential mode conducted interference (DMCI) problems in trigger circuits of high-power thyristors. This paper mainly disscusses DMCI problems in trigger circuits of high-power thyristors in the following aspects: initially, circuit models of high-frequency parasitic parameters of pulse transformer and SMFET are established; next, principles of DMCI in trigger circuits of high-power thyristors are investigated; furthermore, DMCI suppression methods are also analyzed; ultimately, experiments have been carried out to verify the theoretical analysis.