Near-infrared (NIR) luminescent materials have unparalleled advantages in certain fields, such as anti-counterfeiting. Nd3+ ion doped Gd2O3 near-infrared phosphor was successfully prepared by co-precipitation method and high-temperature solid-phase reaction. The structure and morphology of Gd2O3:Nd3+ cubic phase phosphors were studied in detail. The prepared phosphor was optically analyzed by fluorescence spectrometer. The research results show that with the increase of the Nd3+ doping concentration, the luminous intensity of the near-infrared phosphor in the near-infrared region shows a trend of first increasing and then decreasing. When the Nd3+ ion doping concentration is 1.0 mol%, the obtained phosphors have the best luminous intensity in the near-infrared region under the excitation of 808 nm laser. Gd2O3:Nd3+ phosphor emits near-infrared light due to the intra-4f transitions of Nd3+ ions. The concentration quenching theory is used to prove that the concentration quenching of Gd2O3:Nd3+ belongs to the cross relaxation caused by electric multipole. Due to the unique optical properties of this near-infrared phosphor, it is expected to be further developed in the field of fluorescent materials.