Microwave Plasma-enhanced Chemical Vapor Deposition Research Articles

Improved solid-state lithium-ion battery on stainless steel substrate with graphene nanowalls by microwave plasma-enhanced chemical vapor deposition

Improved solid-state lithium-ion battery on stainless steel substrate with graphene nanowalls by microwave plasma-enhanced chemical vapor deposition

Influence of Synthesis Parameters on Structure and Characteristics of the Graphene Grown Using PECVD on Sapphire Substrate.

The high surface area and transfer-less growth of graphene on dielectric materials is still a challenge in the production of novel sensing devices. We demonstrate a novel approach to graphene synthesis on a C-plane sapphire substrate, involving the microwave plasma-enhanced chemical vapor deposition (MW-PECVD) technique. The decomposition of methane, which is used as a precursor gas, is achieved without the need for remote plasma. Raman spectroscopy, atomic force microscopy and resistance characteristic measurements were performed to investigate the potential of graphene for use in sensing applications. We show that the thickness and quality of graphene film greatly depend on the CH4/H2 flow ratio, as well as on chamber pressure during the synthesis. By varying these parameters, the intensity ratio of Raman D and G bands of graphene varied between ~1 and ~4, while the 2D to G band intensity ratio was found to be 0.05-0.5. Boundary defects are the most prominent defect type in PECVD graphene, giving it a grainy texture. Despite this, the samples exhibited sheet resistance values as low as 1.87 kΩ/□. This reveals great potential for PECVD methods and could contribute toward efficient and straightforward graphene growth on various substrates.

Effect of high-temperature annealing on terahertz optoelectronic properties of nitrogen-doped polycrystalline diamond

Nitrogen-doped polycrystalline diamond (N-PCD) is one of the most important carbon-based electronic materials. Here we present a systmatic investigation of the effect of high-temperature annealing (HTA) on basic physical properties of N-PCD wafer grown by microwave plasma-enhanced chemical vapor deposition (MPECVD). The metallographic and optical microscopes, X-ray diffraction,Raman spectroscopy and X-ray photoelectron spectroscopy are applied for the characterization of N-PCD before and after HTA. Particularly, we study the optoelectrnic properties of N-PCD before and after HTA by using terahertz (THz) time-domain spectroscopy. THz transmittance, dynamical and static dielectric constants and optical conductivity for N-PCD are measured. For N-PCD before HTA, we can observe a THz absorption peak induced by weak H-bonds in N-PCD, which was predicted theoretically in 1999. For N-PCD after HTA, we find that the corresponding optical conductivity can be rightly descriped by the Drude-Lorentz formula. Thus, via fitting the experimental results with the theoretical formula, we can determine optically the key electronic parameters of N-PCD after HTA, such as the electron density, the electronic relaxation time and the Lorentz frequency. The temperature dependence of these parameters is examined in the range of 80–300 K. This work demondtrates that HTA is a practical and efficient way in improving the electronic and optoelectronic properties of N-PCD. The results obtained from this research can benefit an in-depth understanding of the effect of HTA on physical properties of N-PCD from a viewpoint of semiconductor physics.

Microwave plasma enhanced chemical vapor deposited vertical carbon nanoflakes electrodes for electric double layer capacitors

BackgroundAs energy storage materials are in an urgent demand and carbon-based nanomaterials provided great potential for battery and supercapacitor. This study applied microwave plasma enhanced chemical vapor deposition (MPE-CVD) to deposit 3-dimensional carbon nanoflakes (CNFs) with distinguished surface area to prepare the electrodes for electric double layer capacitors (EDLCs). MethodsThe vertical growth of CNFs is driven by MPE-CVD using CH4 as precursor gas. The as-prepared CNFs on titanium plate (CNFs_700/Ti) was optimized by thickness and mass loading as function of the applied power. Raman spectroscopy and field emission scanning electron microscopy analyzed the properties and surface morphology of carbon. The electrochemical properties of the CNFs_700/Ti assembled as Swagelok or pouch cell were evaluated by cyclic voltammetry and galvanostatic charge/discharge for potential developments in supercapacitor. Significant findingsAn unprecedented rapid growth rate of CNFs, 180 μm/h, was dramatically accelerated due to MPE-CVD procedure, and could be applied as electrode for EDLCs. The mechanism of CNFs growth was elucidated based on the temperature measurements in reactor which relates closely to the CNFs growth rate, proved by thickness and mass loading of CNFs. The clarification of CNFs growth mechanism assists future developments of carbon-based materials in energy storage materials.

Tailoring the morphology of vertically aligned carbon nanorod arrays grown on Co catalyst nanoparticles and using MW-PECVD

This study reports a direct approach to synthesizing vertically aligned carbon nanorod arrays (VA-CNRA) using microwave plasma-enhanced chemical vapor deposition (MW-PECVD) at 300 °C, on cobalt (Co) catalyst nanoparticles grown by thermal annealing (750 °C) of 10 nm thick Co layer deposited by radio frequency (RF) magnetron sputtering. To grow the VA-CNRA, the gas ratio in the plasma was optimized, focusing on the kinetics of the source gas dissociation and recombination. The reduced concentrations of acetylene (C2H2) impede the optimal alignment of CNRA in the absence of the steric hindrance, resulting in their horizontal growth along the direction of gas flow via the “kite-mechanism”. However, at a higher gas flow ratio, the attractive van der Waals potential among the CNRs was anticipated to induce aggregation when they arrive in proximity and vertical growth alignment of the nanorods via the higher deposition rates. Carbon nanorod films were analyzed using various spectroscopic techniques to understand the growth orientations, which suggests that the carbon nanorods were formed via the base-growth mechanism. Nano flower-like VA-CNRA were formed at higher C2H2/H2 ratios. Notably, a distinct flower-like structure with whisker-like nanostructure petals was formed at a C2H2/H2 flow ratio of ∼0.57. Compared to other nanorod structures, VA-CNRA, grown at optimal gas ratio, exhibited superior crystalline graphite, with 76 % sp2 CC bonding along with a maximum of I2D/IG, and a minimum of ID/IG intensity ratio in the Raman data. High-resolution TEM confirmed robust growth of CNRs, with an average diameter of ∼370 ± 3 nm. This innovative method enables large-scale production of VA-CNRA with high surface areas for energy applications.

Template free growth of cobalt catalyst-assisted horizontally aligned carbon nanorod arrays by MW-CVD utilizing mild oxidant in the plasma

The synthesis of three-dimensional carbon nanostructures without templates remains a substantial challenge. The present research enables skillfully generating horizontally-aligned carbon-nanorod-arrays (HA-CNRA), using microwave plasma-enhanced chemical vapor deposition (MW-PECVD) on quartz substrates coated with Co catalyst layers annealed at diverse temperatures. In this method, a gas mixture comprising C2H2, H2, and CO2 was used for the CNRA growth at a low substrate temperature of ∼300 °C. Electron-microscopy observation confirms the autonomous growth of individual hollow CNRs. A discernible peak at 1340 cm−1, G band peak at 1596 cm−1, and 2670 cm−1 peak (2D band) were observed, indicating a well-graphitized feature of the CNRs, which was further ascertained by the corresponding X-ray diffraction planes of (002) and (101) orientations. In the optimally grown film, a homogeneous array of nanorods with an average diameter of ∼450 nm was obtained. The C 1s spectra peaked at 284.6 eV confirming the presence of crystalline sp2-hybridized nanorods. The novelty of the work lies in enabling the Co catalyst-assisted template-free growth of HA-CNRA by low-temperature MW-CVD, utilizing the reactant atomic species like H and O from the (C2H2 + H2 + CO2)-plasma and preserving the growth continuity through a specific shadow masking configuration deployed atop the developing plane, thereby inducting a diffuse plasma on the substrate and restricting the direct collision of energetic particles with the developing network. Due to the adjustable size, shape, and advantageous architectural characteristics, horizontally-aligned CNRA manifests significant potential as electrode materials for energy storage applications, specifically in batteries and electrochemical capacitors.

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

The low thermal conductivity of β-Ga2O3 is a significant concern for maximizing the potential of this ultra-wide bandgap semiconductor as a power switching device technology. Here, we report on the use of nanocrystalline diamond (NCD) deposited via microwave plasma enhanced chemical vapor deposition (MP-CVD) as a top-side, device-level thermal management solution on a lateral β-Ga2O3 transistor. NCD was grown via MP-CVD on β-(AlxGa1−x)2O3/β-Ga2O3 heterostructures prior to the gate formation of the field-effect transistor. A reduced growth temperature of 400 °C and a SiNx barrier layer were used to protect the oxide semiconductors from etching in the MP-CVD H2 plasma environment. Raman spectroscopy showed a highly sp3-bonded NCD film was obtained at 400 °C, with grain size of about 50–100 nm imaged via atomic force microscopy. The incorporation of the NCD heat-spreading layer resulted in a β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure field-effect transistor showing a decrease in the total thermal resistance at the gate by 42%. The fabrication process, including the NCD etch in the gate region, will need to be improved to minimize the impact of these processes on important device characteristics (i.e., drain current, threshold voltage, and leakage current).

Model of slot antenna for MPECVD of carbon nanostructure

A model of a slotted waveguide antenna for microwave plasma enhanced chemical vapor deposition (MPECVD) of carbon nanostructures at low pressure is developed. The performance of two slot applicator for the production of dense plasma in the working gas (argon) at a frequency of 2.45 GHz is investigated by EM field simulator. Results show that dimensions of the symmetrical slots (length l ≤ λg/2, width of d = 6-10 mm) and optimized angle (φ=32° with respect to the waveguide central line) have a strong influence on the impedance matching of the waveguide to the dielectric window and plasma column (1.5 < SWR < 2.5), and on the radiation efficiency. The dielectric plate and plasma column density were taken into account in the model in the optimisation of the dimensions of the slots. The mode structure of standing surface waves in the plasma column is investigated at three values of plasma density and results for the radial (n=1) and azimuthal wave numbers (m=3, 4, 5) are in agreement with experimental results.

Nanoengineered micro-supercapacitors based on graphene nanowalls for self-powered wireless sensing system

This work presents a comprehensive investigation of micro-supercapacitors (MSCs) based on graphene nanowalls (GNWs), covering core material synthesis, device fabrication, evaluation, and application demonstrations. Three-dimensional hierarchical GNWs structures are grown successfully by a microwave plasma-enhanced chemical vapor deposition (MPECVD), with detailed descriptions of the synthesis process and underlying mechanisms. The structural and morphological properties of the GNWs are thoroughly analyzed. Several types of MSCs are reported, ranging from thin-film to three-dimensional (3D) MSCs, as well as symmetric to asymmetric MSCs. Thin-film MSC is developed by a novel micromachining process for one-step fabricating GNWs-Ni core-shell composite microstructures. A solid-state MSC utilizing 3D hierarchical electrode is created by a fully micro electro mechanical system (MEMS)-compatible process. This involves depositing GNWs-RuOx hybrid nanostructures onto microstructure scaffolds formed using deep reactive ion etching (deep RIE). Additionally, another 3D MSC utilizes GNWs-PANI electrode material deposited on silicon nanowires generated through metal-assisted chemical etching (MACE) method. To enhance MSCs performance, asymmetric MSC is proposed and realized, incorporating GNWs-MnO2 acting as the positive electrode and carbon black serving as the negative electrode. Furthermore, the successfully combination of the fabricated MSCs with an energy harvesting system is demonstrated. The self-powered sensing system driven by solar energy, with the harvested energy stored in MSCs, is effectively showcased, opening up new possibilities for futuristic MSCs to accumulate and store harvested energy as usable electricity. This demonstration has significant potential in fields such as self-powered wireless IoT sensing systems, offering valuable contributions towards sustainable and autonomous energy solutions.

The effect of microstructure and film composition on the mechanical properties of linear antenna CVD diamond thin films

This study reports the impact of film microstructure and composition on the Young’s modulus and residual stress in nanocrystalline diamond (NCD) thin films (≈250nm thick) grown on silicon substrates using a linear antenna microwave plasma-enhanced chemical vapor deposition (CVD) system. Combining laser acoustic wave spectroscopy to determine the elastic properties with simple wafer curvature measurements, a straightforward method to determine the intrinsic stress in NCD films is presented. Two deposition parameters are varied: (1) the substrate temperature from 400°C to 900°C, and (2) the [P]/[C] ratio from 0ppm to 8090ppm in the H2/CH4/CO2/PH3 diamond CVD plasma. The introduction of PH3 induces a transition in the morphology of the diamond film, shifting from NCD with larger grains to ultra-NCD with a smaller grain size, concurrently resulting in a decrease in Young’s modulus. Results show that the highest Young’s modulus of (1130±50)GPa for the undoped NCD deposited at 800°C is comparable to single crystal diamond, indicating that NCD with excellent mechanical properties is achievable with our process for thin diamond films. Based on the film stress results, we propose the origins of tensile intrinsic stress in the diamond films. In NCD, the tensile intrinsic stress is attributed to larger grain size, while in ultra-NCD films the tensile intrinsic stress is due to grain boundaries and impurities.

Carbon Nanowalls as Anode Materials with Improved Performance Using Carbon Nanofibers.

In this paper, a new synthesis of carbon nanofibers (CNFs)/carbon nanowalls (CNWs) was performed to improve the characteristics of anode materials of lithium-ion batteries by using the advantages offered by CNWs and CNFs. Among the carbon-based nanomaterials, CNWs provide low resistance and high specific surface area. CNFs have the advantage of being stretchable and durable. The CNWs were grown using a microwave plasma-enhanced chemical vapor deposition (PECVD) system with a mixture of methane (CH4) and hydrogen (H2) gases. Polyacrylonitrile (PAN) and N,N-Dimethyl Formamide (DMF) were stirred to prepare a solution and then nanofibers were fabricated using an electrospinning method. Heat treatment in air was then performed using a hot plate for stabilization. In addition, heat treatment was performed at 800 °C for 2 h using rapid thermal annealing (RTA) to produce CNFs. A field emission scanning electron microscope (FE-SEM) was used to confirm surface and cross-sectional images of the CNFs/CNWs anode materials. Raman spectroscopy was used to examine structural characteristics and defects. Cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and constant current charge/discharge tests were performed to analyze the electrical characteristics. The synthesized CNFs/CNWs anode material had a CV value in which oxidation and reduction reactions were easily performed, and a low Rct value of 93 Ω was confirmed.

Biosensor Based on Graphene Directly Grown by MW-PECVD for Detection of COVID-19 Spike (S) Protein and Its Entry Receptor ACE2.

Biosensors based on graphene field-effect transistors (G-FET) for detecting COVID-19 spike S protein and its receptor ACE2 were reported. The graphene, directly synthesized on SiO2/Si substrate by microwave plasma-enhanced chemical vapor deposition (MW-PECVD), was used for FET biosensor fabrication. The commercial graphene, CVD-grown on a copper substrate and subsequently transferred onto a glass substrate, was applied for comparison purposes. The graphene structure and surface morphology were studied by Raman scattering spectroscopy and atomic force microscope. Graphene surfaces were functionalized by an aromatic molecule PBASE (1-pyrenebutanoic acid succinimidyl ester), and subsequent immobilization of the receptor angiotensin-converting enzyme 2 (ACE2) was performed. A microfluidic system was developed, and transfer curves of liquid-gated FET were measured after each graphene surface modification procedure to investigate ACE2 immobilization by varying its concentration and subsequent spike S protein detection. The directly synthesized graphene FET sensitivity to the receptor ACE2, evaluated in terms of the Dirac voltage shift, exceeded the sensitivity of the transferred commercial graphene-based FET. The concentration of the spike S protein was detected in the range of 10 ag/mL up to 10 μg/mL by using a developed microfluidic system and measuring the transfer characteristics of the liquid-gated G-FETs. It was found that the shift of the Dirac voltage depends on the spike S concentration and was 27 mV with saturation at 10 pg/mL for directly synthesized G-FET biosensor, while for transferred G-FET, the maximal shift of 70 mV was obtained at 10 μg/mL with a tendency of saturation at 10 ng/mL. The detection limit as low as 10 ag/mL was achieved for both G-FETs. The sensitivity of the biosensors at spike S concentration of 10 pg/mL measured as relative current change at a constant gate voltage corresponding to the highest transconductance of the G-FETs was found at 5.6% and 8.8% for directly synthesized and transferred graphene biosensors, respectively. Thus, MW-PECVD-synthesized graphene-based biosensor demonstrating high sensitivity and low detection limit has excellent potential for applications in COVID-19 diagnostics.

Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry.

The high thermal conductivity of polycrystalline diamond makes it ideally suited for thermal management solutions for gallium nitride (GaN) devices, with a diamond layer grown on an aluminum nitride (AlN) interlayer atop the GaN stack. However, this application is limited by the thermal barrier at the interface between diamond and substrate, which has been associated with the transition region formed in the initial phases of growth. In this work, in situ spectroscopic ellipsometry (SE) is employed to monitor early-stage microwave plasma-enhanced chemical vapor deposition diamond growth on AlN. An optical model was developed from ex situ spectra and applied to spectra taken in situ during growth. Coalescence of separate islands into a single film was marked by a reduction in bulk void fraction prior to a spike in sp2 fraction due to grain boundary formation. Parameters determined by the SE model were corroborated using Raman spectroscopy and atomic force microscopy.

A modified plasma immersed solid-phase impurity assisted doping geometry for the creation of highly fluorescent CVD nanodiamond

In this work, we report on a simple and easy to realize doping geometry by which the color center formation efficiency can be improved significantly in nanocrystalline diamond structures during solid impurity source-assisted microwave plasma enhanced chemical vapor deposition (MWCVD). A vertically aligned solid impurity source immersed into the CVD plasma results in diamond thin film with significantly higher color center related fluorescence signal, than the horizontal and source-free arrangements. Based on the example of negatively charged silicon-vacancy (SiV−) center, we demonstrated that the emission peak intensity of fluorescent nanodiamond structures prepared in such a way can be 7–10 times enhanced without significant alteration of the crystal quality. The observed phenomenon is explained by the increased number of incorporated silicon impurities into the diamond nanocrystals, initiated by the beneficial conditions for the atomization of the vertically aligned impurity source, including the enlarged contact area and the elevated surface temperature. The efficiency of the method was demonstrated for thin films and individual nanocrystal structures as well. The proposed solid-phase doping source geometry can be adapted to other impurities to extend the type or improve the in-situ formation efficiency of impurity related color centers in CVD nanodiamond crystals.

Synthesis mechanism and ‘orthodoxy’ test based field emission analysis of hybrid and pristine graphene nanowalls deposited on thin Kovar wires

Graphene nanowalls (GNWs) also known as carbon nanowalls (CNWs) and GNWs‑carbon nanofibers (CNFs) hybrid nanostrucrures are grown on metallic wires using a two-step microwave plasma enhanced chemical vapour deposition (MW-PECVD) process. Here, plasma is generated in two steps (first at lower pressure and then at higher operating pressure) to avoid arcing on the metallic wire during the growth. Combination of Raman and transmission electron microscopy studies revealed presence of herringbone CNFs in the hybrid nanostructures that are grown with −100 V bias compared to pristine GNWs that are grown without any bias. A new approach for field emission (FE) analysis is created by combining FN equation with ‘orthodoxy test’ in a modified approach to avoid spurious results. Here, hybrid nanostructures exhibited higher current and more repeatable field emission characteristics over 4 cycles of operation. Post FE investigations indicate that while pristine GNWs underwent many deformities and structural changes, hybrid structures remain almost unscathed. These investigations point out that a novel synthesis mechanism can be used to grow GNW based hybrid nanostructures for different applications like X-ray sources which involves FE at the core.

The quality studies of vertical graphene nanosheets catalyst-free microwave plasma-enhanced chemical vapor deposited on glass and fused silica

Vertical graphene nanosheets (VGN) were prepared by a microwave plasma-enhanced chemical vapor deposition technique on glass and fused silica. Their quality was explored by Raman scattering spectroscopy and transient absorption spectroscopy (TAS). We have observed a correlation between Raman scattering spectroscopy data and TAS parameters (charge carrier relaxation times and relative transient absorption signal amplitude). The substrate-related effects were explained by competition between the changes in the size of the effects induced by the graphene nanocrystallite, the substrate-induced graphene self-doping, and the presence of on-site and vacancy defects along with the dominant boundary defects. The optical and electrical properties of VGN on glass deposited at low substrate temperature (600 °C) were similar or even better compared to VGN on fused silica. The ability to prepare high-quality VGN on glass could be very attractive for practical application due to the low substrate price.

Fabrication of metal-ceramic matrix composite multilayer coatings with diamond protective layer for heating elements in the vacuum systems

We report a novel methodical approach to the design of multilayer composite coatings with a final diamond protective layer for vacuum applications, specifically for controlled heating in vacuum apparatus, cryogenic systems, and for space applications. Diamond is a promising option to add unique properties to such multilayers while maintaining fast and uniform heat distribution. The multilayer composite systems were based on the insulating layer - Al2O3, a Cu-based interconnect layer and a TiO2-based heating element. The study demonstrated the compactness and high temperature resistance of the developed composite system, which are necessary for real-world applications. To enhance the functional properties of the deposited multilayer coatings, diamond films were deposited on them using microwave plasma enhanced chemical vapor deposition (MPCVD). The diamond film was deposited as the last layer of the metal-ceramic multilayer coating prepared from various powders using high velocity oxygen fuel (HVOF) and atmospheric plasma spraying (APS) deposition techniques.

Diamond nucleation in carbon films on Si wafer during microwave plasma enhanced chemical vapor deposition for quantum applications

Nucleation is important in processing of good quality diamond crystals and textured thin films by microwave plasma enhanced chemical vapor deposition (MPECVD) for applications in quantum devices and systems. Bias-enhanced nucleation (BEN) is one approach for diamond nucleation in situ during MPECVD. However, the mechanism of diamond nucleation by BEN is not well understood. This paper describes results on the nucleation of diamond within a carbon film upon application of electric field during the BEN-facilitated MPECVD process. The nature of the diamond film and nuclei formed is characterized by SEM (scanning electron microscopy), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The HRTEM images and associated diffraction patterns of the nucleation layer show that the diamond nuclei are formed within the carbon film close to the Si (100) substrate surface under the influence of microwaves and electric fields that lead to formation of the textured diamond film and crystal upon further growth. These results are expected to develop diamond films of optimum quality containing a nitrogen-vacancy center for application in quantum systems.

The influence of droplet-based seeding of nanodiamond particles on the morphological, optical, and mechanical properties of diamond coatings on glass

This work investigates four different methods for the seeding of nanodiamond (ND) particles towards applying nanocrystalline diamond coatings on glass. The standard spin coating and dip coating are investigated together with two droplet-based techniques, ink-jet printing and ultrasonic spray coating (USSC). The application of these last two techniques for diamond coatings on glass is novel and is specifically designed for patterning and large area deposition, respectively. Comparing the seeding processes, their impact on the chemical vapor deposited nanocrystalline diamond (NCD) layers is unclear. Here, particularly the impact on the morphological, optical, and mechanical properties, are studied. In this work, borosilicate glass substrates were seeded, after which diamond layers were grown in a linear antenna microwave plasma-enhanced chemical vapor deposition reactor to thicknesses of 45, 100, and 500 nm. The coatings showed a roughness that is 2 to 3 times higher for the droplet-based seeding techniques compared to spin coating. It was found that the optical absorption coefficient for 100 nm thick samples prepared using USSC was 2400 cm−1 at the wavelength of 550 nm, compared to 1500 cm- 1 using spin and dip seeding techniques. The stress in the film was compressive as determined by curvature measurements. Sand-trickling tests on samples coated with 100 nm thick diamond films showed similar resistance against damaging for all seeding techniques without delamination. Therefore, the different techniques achieve mechanically competitive performance. On top USSC and ink-jet printing have the opportunity to fully cover substrates on large-scale flat and even 3D surfaces, or pattern fine structures, which is not possible for standard spin and dip coating. It can be concluded that diamond coatings on large glass plates for scratch resistance, and sensing due their somewhat higher roughness, are within reach using these innovative droplet-based seeding technologies.

Investigation of the Properties of Anode Electrodes for Lithium–Ion Batteries Manufactured Using Cu, and Si-Coated Carbon Nanowall Materials

The fabrication of high-capacity, binder-free Li–ion battery anodes using a simple and efficient manufacturing process was reported in this research. The anode material for lithium–ion batteries utilized is a combination of two-dimensional (2D) carbon nanowalls (CNWs) and Cu nanoparticles (improved rate performance and capacity retention) or Si (high capacity) nanoparticles. A methane (CH4) and hydrogen (H2) gas mixture was employed to synthesize CNWs on copper foil through microwave plasma-enhanced chemical vapor deposition (PECVD). The Cu or Si nanoparticles were then deposited on the CNW surface using an RF magnetron sputtering equipment with four-inch targets. To analyze the electrochemical performance of the LIBs, CR2032 coin-type cells were fabricated using anode materials based on CNWs and other components. It was confirmed that the Cu−CNW demonstrates improved rate performance, increased specific capacity, and capacity retention compared with traditional anodes. Additionally, CNW combined with Si nanoparticles has enhanced the capacity of LIB and minimized volume changes during LIB operation.