In this study, two series of thermoelectric (TE) materials, AgSb1-xPbxSe2 (x = 0.00, 0.035, 0.04, 0.045, and 0.05) and AgSb0.955Pb0.045BiySe2 (y = 0.01, 0.015, 0.02, and 0.025), were fabricated that are achieved via microwave smelting (MS) combined with spark plasma sintering (SPS). Although Pb doping effectively increased the carrier concentration (n) of the AgSb1-xPbxSe2 materials, it substantially restricted the improvement in carrier mobility (μH), leading to a nonsignificant enhancement in the dimensionless figure of merit (ZT). To address this issue, AgSb1-xPbxSe2 was doped with Bi to optimize n and μH. The phase composition, microstructure, and electrical and thermal transport properties of the materials were characterized in the temperature range of 300-723 K. The AgSb0.955Pb0.045Bi0.025Se2 material exhibited a maximum power factor of 720 μWK-2 m-1 at 723 K and a reduced lattice thermal conductivity of 0.36 Wm1- K-1. Consequently, a ZT value as high as 1.23 was obtained at 723 K. This study demonstrates that microwave smelting - SPS is an efficient and environmentally friendly method for the synthesis of Pb- and Bi-doped AgSbSe2 materials with excellent TE transport properties.
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