Field Of Microelectronics Research Articles

Mathematical Modeling and Experimental Study of Cutting Force for Cutting Hard and Brittle Materials in Fixed Abrasive Trepanning Drill.

Hard and brittle materials have excellent physical and mechanical performance, which are widely applied in the fields of microelectronics and optoelectronics. However, deep-hole machining of hard and brittle materials is very difficult and inefficient due to the high hardness and brittleness of these materials. To improve the quality and efficiency of deep-hole machining of hard and brittle materials, according to the brittle crack fracture removal mechanism of hard and brittle materials and the cutting model of the trepanning cutter, an analytical cutting force prediction model of hard and brittle materials processed using a trepanning cutter is established. This experimental study of K9 optical glass machining shows that as the feeding rate increase, the cutting force increase, and as the spindle speed increase, the cutting force decrease. By comparing and verifying the theoretical and experimental values, the average errors of axial force and torque are 5.0% and 6.7%, respectively, and the maximum error is 14.9%. This paper analyzes the reasons for the errors. The results indicate that the cutting force theoretical model can be used to predict the axial force and torque of machining hard and brittle materials under the same conditions, which provides a theory for optimizing machining process parameters.

The 3D Controllable Fabrication of Nanomaterials with FIB-SEM Synchronization Technology.

Nanomaterials with unique structures and functions have been widely used in the fields of microelectronics, biology, medicine, and aerospace, etc. With advantages of high resolution and multi functions (e.g., milling, deposition, and implantation), focused ion beam (FIB) technology has been widely developed due to urgent demands for the 3D fabrication of nanomaterials in recent years. In this paper, FIB technology is illustrated in detail, including ion optical systems, operating modes, and combining equipment with other systems. Together with the in situ and real-time monitoring of scanning electron microscopy (SEM) imaging, a FIB-SEM synchronization system achieved 3D controllable fabrication from conductive to semiconductive and insulative nanomaterials. The controllable FIB-SEM processing of conductive nanomaterials with a high precision is studied, especially for the FIB-induced deposition (FIBID) 3D nano-patterning and nano-origami. As for semiconductive nanomaterials, the realization of high resolution and controllability is focused on nano-origami and 3D milling with a high aspect ratio. The parameters of FIB-SEM and its working modes are analyzed and optimized to achieve the high aspect ratio fabrication and 3D reconstruction of insulative nanomaterials. Furthermore, the current challenges and future outlooks are prospected for the 3D controllable processing of flexible insulative materials with high resolution.

Self-purification of actual wastewater via microbial-synergy driving of catalyst-surface microelectronic field: A pilot-scale study

High energy consumption is impedimental for eliminating refractory organics in wastewater by current technologies. Herein, we develop an efficient self-purification process for actual non-biodegradable dyeing wastewater at pilot scale, using N-doped graphene-like (CN) complexed Cu-Al2O3 supported Al2O3 ceramics (HCLL-S8-M) fixed-bed reactor without additional input. About 36% chemical oxygen demand removal was achieved within 20 min empty bed retention time and maintained stability for almost one year. The HCLL-S8-M structure feature and its interface on microbial community structure, functions, and metabolic pathways were analyzed by density-functional theory calculation, X-ray photoelectron spectroscopy, multiomics analysis of metagenome, macrotranscriptome and macroproteome. On the surface of HCLL-S8-M, a strong microelectronic field (MEF) was formed by the electron-rich/poor area due to Cu-π interaction from the complexation between phenolic hydroxy of CN and Cu species, driving the electrons of the adsorbed dye pollutants to the microorganisms through extracellular polymeric substance and the direct transfer of extracellular electrons, causing their degradation into CO2 and intermediates, which was degraded partly via intracellular metabolism. The lower energy feeding for the microbiome produced less adenosine triphosphate, resulting in little sludge throughout reaction. The MEF from electronic polarization is greatly potential to develop low-energy wastewater treatment technology.

Fatigue tolerance of nanostructured Cu/interlayer bilayers: Tuned by heterogeneous interface

In this paper, interlayers with different characteristics (crystalline Cr vs amorphous CuZr) were used for nanostructured Cu films adherent to polyimide substrates. Impact of heterogeneous interface on the fatigue behavior was investigated by using microstructural examinations in combination with molecular dynamics simulations. It is revealed that the Cr interlayer deteriorated the fatigue property of Cu films because of the formation of voids at the Cu/Cr interface during cyclic loading. By contrast, the CuZr interlayer improved the fatigue performance of Cu films, which can be attributed to the strengthened constraint effect on dislocation motion and the excellent interface compatibility associated with the absorption of dislocations. These findings provide new insight in tailoring the interlayers to achieve optimized performance for nanostructured Cu/interlayer bilayers as extensively applied in microelectronics field.

The Synergistic Effect of Triazine and Phosphaphenanthrene Units on the Physico-Chemical Behavior of Polyimides.

With the aim to develop polymers with appealing, multifunctional characteristics, a series of polyimides were designed by anchoring 9,10-dihydro-9-oxa-10-phosphaphenanthrene 10-oxide (DOPO) units on the main polymer chains containing 1,3,5-triazine and several flexible moieties, such as ether, hexafluoroisopropylidene, or isopropylidene. A detailed study was conducted to establish structure-property correlations, with a focus on the synergistic effectiveness of triazine and DOPO moieties on the overall features of polyimides. The results evidenced good solubility of the polymers in organic solvents, their amorphous nature with short-range regular-packed polymer chains, and high thermal stability with no glass transition temperature below 300 °C. Spectrophotometric measurements revealed the existence of a strong charge transfer complex in these polymers that led to a "black" appearance, which generated broad absorption bands spanning on the overall visible range. Nevertheless, these polymers displayed green light emission associated with 1,3,5-triazine emitter. The electrochemical characteristics of the polyimides in solid state demonstrated their strong n-type doping character induced by three different structural elements with electron-acceptance capability. The useful properties of these polyimides, including optical, thermal, electrochemical, aesthetics, and opaqueness, endow them with several possible applications in the microelectronic field, such as protecting layers for the inner circuits against UV light deterioration.

Electrochemical etching modes of 4H-SiC in KOH solutions

Electrochemical etching is a promising wet etching technology for preparing porous structures and the flat surface etching of 4H-SiC. In this study, the effects of current density and KOH concentration on the etching of 4H-SiC were investigated. We found that the respective mechanisms for preparing porous structures and flat surface etching differed. The porous and flat etching modes were proposed to clarify the mechanistic differences. In addition, we achieved an etch rate of 1 μm h−1 in flat etching mode, and the sample surface was improved for 4H-SiC applications in the field of optoelectronics and microelectronics through the thermal oxidation of SiC.

CURRENT APPLICATIONS AND CHALLENGES OF THE INTERNET OF THINGS

The concept of the Internet of Things is capable of making a giant leap in the economy, including research in the field of computer science, network technologies, microelectronics and sensor technology. Combined with the technological developments of nanotechnology and robotics, IoT can play a central role in the industrial revolution by creating economic relations between machines and connecting the economy of people and machines, solving a number of problems that humanity is facing. All devices controlled via the Internet are elements of the Internet of things. The IoT has allowed various possibilities for all countries to improve life quality and the technological ideas for efficiency, productivity, security, and profit. An integrated security system is a giant step towards the improved economy. The concept of IoT plays a decisive role in the further development of the infocommunication industry. This is confirmed both by the position of the International Telecommunication Union (ITU) and the European Union on this issue, and by the inclusion of the Internet of Things in the list of breakthrough technologies in the United States, China and other countries. Thus, this article will go over the current state of the IoT as well as describe which devices and industries stand to benefit from the advantages it brings. Additionally, statistical data on the actual trends and investments into IoT across the world are also provided.

Failures of ICs Caused by Dielectric Breakdown

The paper describes some problems of operation failures of integrated circuits (ICs) and corresponding preventative measures by constructive-technological, schematic-topological methods at the early stages of design process. The issues related to the problems of IC failures caused by dielectric breakdown are considered, generalized and systematized. Some examples that can be used in practice when developing ICs to improve their reliability, taking into account current trends in the microelectronics field.

Study of fabrication of large working area periodical nanostructure ceiling lights to optimize usage performance

The method offers a simple, fast, and cost-effective approach for the large-scale production of periodical nanostructures, which can be applied in various industrial applications. Firstly, the i-line stepper is used to expose the photoresist film on a silicon wafer. Then, the DoF and EL parameters are adjusted to achieve the desired pattern. Finally, the pattern is transferred to the wafer through the etching process. The patterns obtained are of high resolution and uniformity. In the experimental results demonstrate that this method is suitable for the large-scale production of periodical nanostructures. This method can be used to produce nanostructures with various shapes and sizes, which is of great importance for applications in the fields of microelectronics, optoelectronics, nanophotonics, and biomedicine.

Flexible Polypyrrole-Coated Polyamide Based Mats for Broadband Microwave Absorption and Electromagnetic Interference Shielding with Low Reflection

Electromagnetic interference (EMI) -shielding and microwave-absorbing materials are of great significance in the fields of microelectronics and telecommunication to achieve electromagnetic protection and compatibility. However, it still remains a challenge to design and fabricate materials integrating both microwave absorbing and shielding properties. In this study, we prepared fluffy and porous EMI shielding materials via facile vapor deposition of pyrrole (Py) on commercial polyamide fibrous mats (FMs). The uniform polypyrrole (PPy) coating on the fiber surface endows the FM with a favorable three-dimensional (3D) conductive network. By the combination of a highly porous microstructure, the fabricated polyamide fibrous mat@polypyrrole (FM@PPy) presents excellent microwave-absorbing and EMI-shielding properties. The EMI shielding efficiency (EMI SE) of FM@PPy can reach 40 dB with a high absorption coefficient (A) of 0.8, showing extremely low reflection with “green” EMI shielding characteristics in the whole X-band (8.2–12.4 GHz). Meanwhile, the reflection loss (RL) of FM@PPy is less than −10 dB in the X-band. Moreover, FM@PPy also exhibits favorable stability and reliability as a wearable sensor. The FM@PPy demonstrates promising potential for “green” EMI shielding, broadband microwaves absorbing and highly stable intelligent sensor.

Physical Properties of an Ultrathin Al2O3/HfO2 Composite Film by Atomic Layer Deposition and the Application in Thin-Film Transistors

A high-quality ultrathin dielectric film is important in the field of microelectronics. We designed a composite structure composed of Al2O3/HfO2 with different Al2O3/HfO2 cycles prepared by atomic layer deposition (ALD) to obtain high-quality ultrathin (1-12 nm) dielectric films. Al2O3 protected HfO2 from interacting with the Si substrate and inhibited the crystallization of the HfO2 film. High permittivity material of HfO2 was adopted to guarantee the good insulating property of the composite film. We investigated the physical properties as well as the growth mode of the composite film and found that the film exhibited a layer growth mode. The water contact angle and grazing-incidence small-angle X-ray scattering analyses revealed that the film was formed physically at 3 nm, while the thickness of the electrically stable film was 10 nm from grazing-incidence wide-angle X-ray scattering and dielectric constant analyses. The composite film was applied as a dielectric layer in thin-film transistors (TFTs). The threshold voltage was decreased to 0.27 V compared to the organic field-effect transistor with the single HfO2 dielectric, and the subthreshold swing was as small as 0.05 V/dec with a carrier mobility of 49.2 cm2/V s. The off-current was as low as 10-11 A, and the on/off ratio was as high as 5.5 × 106. This ALD-prepared composite strategy provides a simple and practical way to obtain the high-quality dielectric film, which shows the potential application in the field of microelectronics.

Investigation and Prediction of Nano-Silver Line Quality upon Various Process Parameters in Inkjet Printing Process Based on an Experimental Method.

As an emerging additive manufacturing technology, inkjet printing has been increasingly applied in microelectronics field. However, due to the impacting and rebounding behaviors of conductive ink droplets impinging onto flat substrates, it is challenging to fabricate conductive lines with desired quality, such as suitable line width and line thickness, and matching resistance when it is used for interconnecting multifarious electronic components if there is not a proper configuration of operating parameters. To address this research gap, this article aims to investigate the effect of process parameters on the quality of conductive lines, including the platform temperature, printing speed, number of layers, and delay time (droplet interarrival time), are selected to conduct a full factorial experiment. First, the approximate parameter ranges for ensuring the continuity of conductive lines are determined. Second, this study analyzes the interactive effect among process parameters on line quality. Third, an artificial neural network (ANN) is constructed to predict the quality of printed lines. Results show that the line width does not increase with an increased number of layers, while the line thickness shows an increasing trend. The low resistance and high aspect ratio of printed line are achieved by printing 5 layers with the platform temperature of 70°C, the delay time of 12.2 ms, and the printing speed of 1139.39 mm/min. Moreover, the ANN model can be used to predict line width and line thickness with excellent performance, except for the resistance due to the irregular line edge. This study provides a useful guide for the selection of appropriate printing parameters to realize a diverse range of quality properties for 3D printed conductive lines in integrated circuits.

Multi‐Hydration Induced Zwitterionic Hydrogel with Open Environment Stability for Chemical Sensing

AbstractHydrogels with open environment stability are of great significance in the fields of microelectronics, organ regeneration, and hydrogel‐based sensors. Although a series of strategies for exploring highly robust hydrogels have been proposed, it is still challenging to improve environmental stability while maintaining the original dispersed medium feature. Here, 1‐vinyl‐3‐butylimidazolium (VBIM) and acrylic acid (AA) are used as the anionic and cationic monomers to prepare zwitterionic hydrogels through the thermal initiation polymerization. The prepared PAA‐IL (polyacrylic acid‐co‐ionic liquid) hydrogel forms a large number of multi‐hydration, including hydrogen bonds and ion‐dipole interactions with water to inhibit the freezing and volatilization of water, and it possesses good structural stability due to the formation of ion bond self‐association through interchain charge interaction. The robust stability of the chemical sensor with PAA‐IL hydrogels as the substrate at different pH and temperature verifies the validity of the proposed design strategy. It is expected that the present zwitterionic hydrogel design strategy would shine a light on the exploration of environment‐stable hydrogels and hydrogel‐based chemical sensors.

Enhanced Electromagnetic Shielding and Thermal Management Properties in MXene/Aramid Nanofiber Films Fabricated by Intermittent Filtration

High-efficiency electromagnetic interference (EMI) shielding and heat dissipation synergy materials with flexible, robust, and environmental stability are urgently demanded in next-generation integration electronic devices. In this work, we report the lamellar MXene/Aramid nanofiber (ANF) composite films, which establish a nacre-like structure for EMI shielding and heat dissipation by using the intermittent filtration strategy. The MXene/ANF composite film filled with 50 wt % MXene demonstrates enhanced mechanical properties with a strength of 230.5 MPa, an elongation at break of 6.2%, and a toughness of 11.8 MJ·m3 (50 wt % MXene). These remarkable properties are attributed to the hydrogen bonding and highly oriented structure. Furthermore, due to the formation of the MXene conductive network, the MXene/ANF composite film shows an outstanding conductivity of 624.6 S/cm, an EMI shielding effectiveness (EMI SE) of 44.0 dB, and a superior specific SE value (SSE/t) of 18847.6 dB·cm2/g, which is better than the vacuum filtration film. Moreover, the MXene/ANF composite film also shows a great thermal conductivity of 0.43 W/m·K. The multifunctional MXene/ANF composite films with high-performance EMI shielding, heat dissipation, and joule heating show great potential in the field of aerospace, military, microelectronics, microcircuit, and smart wearable electronics.

Transient thermal investigation of a fully wet porous convective–radiative rough cylindrical pin fin

AbstractThe microelectromechanical systems technologies frequently produce rough surfaces, and the repercussion of roughness on the thermal performance is more prominent in structures of smaller dimensions. In this regard, the present article intends to examine the unsteady thermal behavior of a fully wet, porous, and rough micropin‐fin structure under convective–radiative conditions. Here, a pin fin of a cylindrical profile has been chosen. The problem is modeled by incorporating the roughness parameters in the perimeter and cross‐sectional area of the pin fin. Further, the study of the porous structure has been carried out by implementing the Darcy model. The resulting partial differential equation is nonlinear and of the second order which has been solved by employing the finite difference method. The impact of the roughness parameter, wet porous parameter, dimensionless time, convective parameter, base radius‐to‐length ratio, radiative parameter, thermal conductivity parameter, power index, and ambient temperature on the thermal performance and efficiency of rough micropin‐fin structures has been established graphically. According to the findings, for rise in roughness, the rough micropin fin has more thermal drop rate and less efficiency than the smooth one. Further, the work is beneficial in the field of microelectronics, especially in the design of micropin‐fin structures.

Pilot Study on the Construction Plan of Biological Microelectronics Micro Major

Biological microelectronics is a hot topic in the research field of microelectronics, integrated circuits and biology in recent years. The School of Microelectronics in Shandong University exemplarily set up Biological Microelectronics Micro major in 2020. After the first stage of the courses, questionnaires were designed to investigate the evaluations and suggestions from the first batch of participants for the Bio-microelectronics introduction course. We also analyzed the achievements and shortcomings of the first-stage training program of the micro major, and put forward some suggestions that lead to improvements in the follow-up construction of biological microelectronics micro major. We also summarized valuable experience in the construction of cross-discipline in the field of biological microelectronics. This work will help to optimize training program of the biological microelectronics micro major.

ZIF-8 thin films by a vapor-phase process: limits to growth.

Metal-organic frameworks are a class of porous materials that show promising properties in the field of microelectronics. To reach industrial use of these materials, gas phase techniques are often preferred and were recently introduced. However, the thicknesses achieved are not sufficient, limiting further development. In this work, an improved gas phase process allowing ZIF-8 layer formation of several hundreds of nm using cyclic ligand/water exposures is described. Then, by a combination of in-depth surface analyses and molecular dynamics simulations, the presence and role of hydroxyl defects in the ZIF-8 layer to reach this thickness are established. At the same time, this study unveils an inherent limit of the method: thickness growth is consubstantial with defect repairing upon the crystallites ripening; such defect repairing eventually leads to the decrease of the pore window below the diffusion radius of the incoming linker, thus apparently capping the maximum MOF thickness observable for this type of material topology through this growth method.

Разработка доверенных средств проектирования ИС в базисе гетерогенных ПЛИС

This paper focuses on the development of trusted tools for designing digital circuits in the basis of heterogeneous field programmable gate arrays (FPGAs). Designing heterogeneous FPGAs is one of the most actively growing areas in Russian microelectronics at present. The paper discusses the main problems and challenges associated with the development of trusted computer-aided design tools. The authors propose a relevant approach to the development of a computer-aided design system based on the use of open-source software tools together with proprietary developments for its critical components. This approach allows to increase the efficiency and reliability of the design process in the basis of heterogeneous FPGAs. The paper considers such stages of the design flow in the basis of heterogeneous FPGAs as logic synthesis and technology mapping, different stages of layout synthesis and static timing analysis. The work is of interest to specialists in the field of microelectronics, as well as to researchers involved in the development of IC design tools and systems. The research results contribute to the improvement of existing IC design methods and tools, as well as to the development and expansion of the Russian electronic component base.

ПОВЫШЕНИЕ ЭФФЕКТИВНОСТИ ПРОЦЕССА РАЗРАБОТКИ И ВЫВОДА НА РЫНОК НАУКОЕМКОЙ ПРОДУКЦИИ НА ОСНОВЕ ТЕХНОЛОГИИ «STAGE-GATE»

The purpose of the article is to develop directions for improving the management of the end-toend process of creating and launching high-tech products on the market, which acts as a key efficiency factor in digital transformation. The relevance of the article is due to the fact that the factors and conditions of digital transformation, aggravated by macroeconomic instability, require a restructuring of the management model of industrial knowledge-intensive enterprises. Objectives: 1) identify the features and patterns of the process of creating and launching high-tech products on the market in the digital economy; 2) determine the role of managing the end-to-end process of creating and launching high-tech products on the market as a key efficiency factor in digital transformation; 3) justify the use of the “STAGE-GATE” technology as an adapted approach to the launch of high-tech products, taking into account the influence of changes in the internal and external environment; 4) develop a model of an ideal digital industrial enterprise. Methodology is based on the use of general scientific methods within the framework of a systematic approach: the method of analogy; method of formalization, method of abstraction and logical analysis; decomposition method, structural-logical analysis, synthesis. Results. The conclusion is made about the need for an adapted approach to the launch of high-tech products; here we show the need and feasibility of using the “STAGE-GATE” technology. A description of the “STAGE-GATE” technology is presented, which, unlike the traditional algorithm, allows you to adapt and transform under the influence of changes in the internal and external environment, the emergence of new commercial and technical information about both potential and risks and problems. The prospects of this technology for industrial knowledge-intensive enterprises of medium and large businesses in the fields of robotics, electrical engineering, microelectronics, IT and system integration, and instrument engineering are substantiated. An analysis of the possibilities of combining models “Three components of a digital enterprise: E2M/ E2D/ E2E” was carried out; “Components and systems of a digital enterprise – an ideal model”; “R. Cooper’s Stage-Gate Technology”; “Model stages of implementation of the end-to-end process of creating and launching products on the market – the NPD process” in the process of forming a model of an ideal digital industrial enterprise. Conclusions. The article substantiates that the proposed approach, when applied in practice, will improve the efficiency of the end-to-end process of creating and launching high-tech products on the market due to: 1) the functioning of the elements of a digital enterprise, which are combined into three system areas/ technologies – Design, production and management, namely they determine the implementation of the endto- end process; 2) due to the Stage-Gate technology.

Coordination Compounds in Devices of Molecular Spintronics

Spintronics, being one of the youngest fields of microelectronics, is applied already for several decades to enhance the efficiency of components of computer equipment and to develop units of quantum computer and other electronic devices. The use of molecular material layers in a spintronic device makes it possible to substantially deepen the understanding of the spin transport mechanisms and to form foundation for a new trend at the nexus of physics and chemistry: molecular spintronics. Since the appearance of this trend, various coordination compounds, including semiconductors, single-molecule magnets, complexes with spin transitions, and metal-organic frameworks, are considered as molecular materials of spintronic devices with diverse unusual characteristics imparted by these materials. Specific features of using the earlier described representatives of the listed classes of compounds or their analogs, which are still “kept on the shelves” in chemical laboratories, for manufacturing polyfunctional devices of molecular spintronics are briefly reviewed.