MgO Magnetic Tunnel Junctions Research Articles

Highly Sensitive Detection of Weak Low Frequency Magnetic Fields Using Single Nanoscale Orthogonal MgO Magnetic Tunnel Junctions under a Large Bias Field

Highly Sensitive Detection of Weak Low Frequency Magnetic Fields Using Single Nanoscale Orthogonal MgO Magnetic Tunnel Junctions under a Large Bias Field

Comparison of performance among five types of tunneling magnetoresistance linear sensing units based on MgO magnetic tunnel junction

Magnetic tunnel junction (MTJ) has been successfully used in spintronic devices, such as magnetoresistive random access memory, tunneling magnetoresistance (TMR) sensor, magnetic logic. In the TMR sensor a special magnetic structure is used between the free layer and the pinned layer of an MTJ to realize a linear output. So far, five types of TMR linear sensing units (TMR-LSNs) have been developed based on MgO MTJs, which are artificial-indirect-double-exchange-coupling-, magnetic-field-biased-, in-plane-, perpendicular-, and superparamagnetic-TMR-LSN, respectively. In this paper, the five types of TMR-LSNs are combed and their magnetic sensing performances are systematically compared with each other. First, the five types of TMR-LSNs each have a linear resistance response to the external magnetic field with a changeable sensitivity, a linear field range and a low frequency noise level. Second, in the five types of TMR-LSNs different magnetic structures are used to realize the same aim that is to obtain the optimized performance parameters, which is of significance for putting TMR sensors into practical applications. Third, the five types of TMR-LSNs are suitable for different application scenarios due to their respective performance parameters. Therefore, we believe that our summarized discussion in this paper will help people to explore and find the relevant applications of TMR sensors based on the five types of TMR-LSNs.

A thermodynamic core using voltage-controlled spin–orbit-torque magnetic tunnel junctions

We present a magnetic implementation of a thermodynamic computing fabric. Magnetic devices within computing cores harness thermodynamics through its voltage-controlled thermal stability; while the evolution of network states is guided by the spin–orbit-torque effect. We theoretically derive the dynamics of the cores and show that the computing fabric can successfully compute ground states of a Boltzmann Machine. Subsequently, we demonstrate the physical realization of these devices based on a CoFeB−MgO magnetic tunnel junction structure. The results of this work pave the path towards the realization of highly efficient, high-performance thermodynamic computing hardware. Finally, this paper will also give a perspective of computing beyond thermodynamic computing.

Spin-driven electrical power generation at room temperature

On-going research is exploring novel energy concepts ranging from classical to quantum thermodynamics. Ferromagnets carry substantial built-in energy due to ordered electron spins. Here, we propose to generate electrical power at room temperature by utilizing this magnetic energy to harvest thermal fluctuations on paramagnetic centers using spintronics. Our spin engine rectifies current fluctuations across the paramagnetic centers’ spin states by utilizing so-called ‘spinterfaces’ with high spin polarization. Analytical and ab-initio theories suggest that experimental data at room temperature from a single MgO magnetic tunnel junction (MTJ) be linked to this spin engine. Device downscaling, other spintronic solutions to select a transport spin channel, and dual oxide/organic materials tracks to introduce paramagnetic centers into the tunnel barrier, widen opportunities for routine device reproduction. At present MgO MTJ densities in next-generation memories, this spin engine could lead to ‘always-on’ areal power densities that are highly competitive relative to other energy harvesting strategies.

Highly sensitive spintronic strain-gauge sensor based on a MgO magnetic tunnel junction with an amorphous CoFeB sensing layer

We investigated spintronic strain-gauge sensors (Spin-SGSs) based on magnetic tunnel junctions (MTJs). To enhance the strain sensitivity of Spin-SGSs, which is defined as the gauge factor = (ΔR/R)/Δε, we investigated MgO-MTJs with an amorphous CoFeB sensing layer that exhibits high magnetostriction and soft magnetic properties. To maintain the amorphous structure of the CoFeB sensing layer even after post annealing, we applied a MgO capping layer (MgO-cap) to the CoFeB sensing layer and compared it with a Ta capping layer (Ta-cap). After post annealing at 320 °C, the CoFeB sensing layer with a MgO-cap maintained a low coercivity of 3 Oe, whereas that with a Ta-cap exhibited a high coercivity of 25 Oe. Microstructure analysis revealed that the CoFeB sensing layer with the MgO-cap has an amorphous structure because boron remains in the CoFeB sensing layer even after post annealing. The gauge factor for the Spin-SGS with the MgO-cap was 4016, which was four times larger than 942 for the Spin-SGS with the Ta-cap.

Thermal FMR Spectral Characterization of Very Low RA In-Plane MgO Magnetic Tunnel Junctions

The ability to fabricate MgO magnetic tunnel junction nanopillars with low RA and high TMR opens the door to new devices such as magnetic memories or nanooscillators. Here, we address the dynamic behavior of a CoFeB/MgO/CoFeB MTJ with a synthetic-antiferromagnetic pinned layer as a potential candidate for spin-transfer torque (STT) driven applications. The unpatterned stack presents an RA of $\sim 1.4~\Omega \mu \text{m}^{2}$ and both free layer and barrier are patterned down to a $90 \times 180$ nm2 elliptical shape. The observed high-frequency spectra displayed deviations from the uniform precession modes due to additional coupling fields. A dependence of the STT magnitude on the analyzed mode was obtained, differing from previous reports, most likely due to the very low RA employed.

Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation

The influences of various types of high-energy heavy-ion radiation on 10-nm-scale CoFeB–MgO magnetic tunnel junctions with a perpendicular easy axis have been investigated. In addition to possible latent damage, which has already been pointed out in previous studies, high-energy heavy-ion bombardments demonstrated that the magnetic tunnel junctions may exhibit clear flips between their high- and low-resistance states designed for a digital bit 1 or 0. It was also demonstrated that flipped magnetic tunnel junctions still may provide proper memory functions such as read, write, and hold capabilities. These two findings proved that high-energy heavy ions can produce recoverable bit flips in magnetic tunnel junctions, i.e., soft errors. Data analyses suggested that the resistance flips stem from magnetization reversals of the ferromagnetic layers and that each of them is caused by a single strike of heavy ions. It was concurrently found that an ion strike does not always result in a flip, suggesting a stochastic process behind the flip. Experimental data also showed that the flip phenomenon is dependent on the device and heavy-ion characteristics. Among them, the diameter of the device and the linear energy transfer of the heavy ions were revealed as the key parameters. From their dependences, the physical mechanism behind the flip was discussed. It is likely that a 10-nm-scale ferromagnetic disk loses its magnetization due to a local temperature increase induced by a single strike of heavy ions; this demagnetization is followed by a cooling period associated with a possible stochastic recovery process. On the basis of this hypothesis, a simple analytical model was developed, and it was found that the model accounts for the results reasonably well. This model also predicted that magnetic tunnel junctions provide sufficiently high soft-error reliability for use in space, highlighting their advantage over their counterpart conventional semiconductor memories.

Fast neutron tolerance of the perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm

This work represents the first-ever investigation of the effects of fast neutron exposure on the perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctions (p-MTJs) with practical junction diameters (D) between 46 and 64 nm. In this study, 461 p-MTJs, each with a tunnel magnetoresistance (TMR) ratio above 90%, were irradiated with fast neutrons at a total 1 MeV equivalent fluence of 3.79 × 1012 cm−2, corresponding to 1.90 × 1011 h irradiation with fast atmospheric neutrons (20 cm−2 h−1), without applying a bias voltage. Following irradiation, there were no changes in the properties of these devices, such as their resistance versus magnetic field curves, resistance values in the parallel and anti-parallel states, or TMR ratios, regardless of the neutron fluence. On the basis of these data, the nuclear reactions that occur under the specific experimental neutron irradiation conditions employed in this work are discussed.

Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method

Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2 nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0 nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method.

Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta|CoFe|MgO magnetic tunnel junctions: A first-principles study

To investigate the impact of both the CoFe ferromagnetic layer thickness and the capping paramagnetic layer on the tunnel magnetoresistance (TMR), we performed first-principles simulations on epitaxial magnetic tunnel junctions contacted with either CoFe or Ta paramagnetic capping layers. We observed a strong oscillation of the TMR amplitude with respect to the thickness of the ferromagnetic layer. The TMR is found to be amplified whenever the MgO spin tunnel barrier is thickened. Quantization of the electronic structure of the ferromagnetic layers is found to be at the origin of this oscillatory behavior. Metals such as Ta contacting the magnetic layer are found to enhance the amplitude of the oscillations due to the occurrence of an interface dipole. The latter drives the band alignment and tunes the nature of the spin channels that are active during the tunneling process. Subsequently, the regular transmission spin channels are modulated in the magnetic tunnel junction stack and other complex ones are being activated.

Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology

Voltage control of magnetization via strain in piezoelectric/magnetostrictive systems is a promising mechanism to implement energy-efficient straintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using a local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

Improvement of Thermal Tolerance of CoFeB–MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition

We investigated annealing temperature $T_{a}$ dependence of tunnel magnetoresistance (TMR) ratio and magnetic properties for perpendicular-anisotropy (CoFe)100– X B X /MgO magnetic tunnel junctions (MTJs) with single (CoFe)100– X B X /MgO interface (s-MTJ) and double CoFeB–MgO interface (d-MTJ) structures with various boron compositions X. High TMR ratio over 100% was observed in the s-MTJ with $X= 35$ at.% after annealing at 360 °C–400 °C, whereas the s-MTJ with $X = 30$ at.% showed the degradation of TMR ratio with the increase of $T_{a}$ above 360 °C, resulting from the decrease of perpendicular anisotropy. The d-MTJ with $X = 25$ at.% maintained high TMR ratio up to $T_{a} = 400~^{\circ }\text{C}$ owing to its higher perpendicular anisotropy compared with the s-MTJ. The difference of perpendicular anisotropy between the s-MTJ and the d-MTJ can be attributed to higher interfacial anisotropy together with lower saturation magnetization of the d-MTJs. The lower saturation magnetization is attributable to two MgO layers that suppress boron diffusion from CoFeB layers, which was verified by cross-sectional line analysis using electron energy-loss spectroscopy.

Comparison of laser-induced and intrinsic tunnel magneto-Seebeck effect inCoFeB/MgAl2O4and CoFeB/MgO magnetic tunnel junctions

We present a comparison of the tunnel magneto-Seebeck effect for laser induced and intrinsic heating. Therefore, Co$_{40}$Fe$_{40}$B$_{20}$/MgAl$_2$O$_4$ and Co$_{25}$Fe$_{55}$B$_{20}$/MgO magnetic tunnel junctions have been prepared. The TMS ratio of 3\,\% in case of the MAO MTJ agrees well with ratios found for other barrier materials, while the TMS ratio of 23\,\% of the MgO MTJ emphasizes the influence of the CoFe composition. We find results using the intrinsic method that differ in sign and magnitude in comparison to the results of the laser heating. The intrinsic contributions can alternatively be explained by the Brinkman model and the given junction properties. Especially, we are able to demonstrate that the symmetric contribution is solely influenced by the barrier asymmetry. Thus, we conclude that the symmetry analysis used for the intrinsic method is not suitable to unambiguously identify an intrinsic tunnel magneto-Seebeck effect.

Atomic-Scale Structure and Local Chemistry of CoFeB-MgO Magnetic Tunnel Junctions.

Magnetic tunnel junctions (MTJs) constitute a promising building block for future nonvolatile memories and logic circuits. Despite their pivotal role, spatially resolving and chemically identifying each individual stacking layer remains challenging due to spatially localized features that complicate characterizations limiting understanding of the physics of MTJs. Here, we combine advanced electron microscopy, spectroscopy, and first-principles calculations to obtain a direct structural and chemical imaging of the atomically confined layers in a CoFeB-MgO MTJ, and clarify atom diffusion and interface structures in the MTJ following annealing. The combined techniques demonstrate that B diffuses out of CoFeB electrodes into Ta interstitial sites rather than MgO after annealing, and CoFe bonds atomically to MgO grains with an epitaxial orientation relationship by forming Fe(Co)-O bonds, yet without incorporation of CoFe in MgO. These findings afford a comprehensive perspective on structure and chemistry of MTJs, helping to develop high-performance spintronic devices by atomistic design.

MgO magnetic tunnel junctions of enduring F-type upon annealing

The authors performed magnetotransport experiments to determine whether annealing alters the oxygen vacancy-mediated tunnelling potential landscape of the central portion of a MgO ultrathin film within sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions. Using the Îrel method reveals a temperature-dependent tunnelling barrier height for a non-annealed barrier that arises from single oxygen vacancies (F centres) and is qualitatively identical to that found for its partly and fully annealed counterparts. Thus these MTJs with F centres remain of F-type upon annealing. This explicitly confirms that the large tunnel-magnetoresistance (TMR) increase upon annealing results mainly from structural modifications of MgO and CoFeB and not from vacancy pairing within the barrier. Photoluminescence spectra performed on both annealed and non-annealed thin MgO films grown on CoFeB electrodes support this conclusion. This work should promote renewed scrutiny over the precise impact of annealing on tunnelling magnetotransport across MgO.

Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir22Mn78 (6)/Ni80Fe20 (tNiFe = 20–70)/Ru (0.9)/Co40Fe40B20 (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

Electronic and magnetic properties of off-stoichiometric Co2MnβSi/MgO interfaces studied by x-ray magnetic circular dichroism

We have studied the electronic and magnetic states of Co and Mn atoms at the interface of the Co2MnβSi (CMS)/MgO (β = 0.69, 0.99, 1.15, and 1.29) magnetic tunnel junction (MTJ) by means of x-ray magnetic circular dichroism. In particular, the Mn composition (β) dependences of the Mn and Co magnetic moments were investigated. The experimental spin magnetic moments of Mn, mspin(Mn), derived from x-ray magnetic circular dichroism weakly decreased with increasing Mn composition β in going from Mn-deficient to Mn-rich CMS films. This behavior was explained by first-principles calculations based on the antisite-based site-specific formula unit (SSFU) composition model, which assumes the formation of only antisite defect, not vacancies, to accommodate off-stoichiometry. Furthermore, the experimental spin magnetic moments of Co, mspin(Co), also weakly decreased with increasing Mn composition. This behavior was consistently explained by the antisite-based SSFU model, in particular, by the decrease in the concentration of CoMn antisites detrimental to the half-metallicity of CMS with increasing β. This finding is consistent with the higher tunnel magnetoresistance ratios which have been observed for CMS/MgO/CMS MTJs with Mn-rich CMS electrodes.

Enhancement of electric-field-induced change of magnetic anisotropy by interface engineering of MgO magnetic tunnel junctions

Electric-field-induced modification of magnetic anisotropy is studied using tunnel magnetoresistance of the Co40Fe40B20/ MgO/ Co40Fe40B20 and Co40Fe40B20/ Hf (0.08 nm)/ MgO/ Co40Fe40B20 magnetic tunnel junctions. In both systems, the interfacial perpendicular magnetic anisotropy is increased with increasing electron density at the MgO interface. A quantitative comparison between the two systems reveals that the change of magnetic anisotropy energy with electric field is significantly enhanced in Co40Fe40B20/ Hf/ MgO/ Co40Fe40B20 compared to Co40Fe40B20/ MgO/ Co40Fe40B20. The sub-monolayer Hf insertion at the Co40Fe40B20/MgO interface turns out to be critical to the enhanced electric field control of the magnetic anisotropy, indicating the interface sensitive nature of the effect.

Oscillation characteristics of zero-field spin transfer oscillators with field-like torque

We theoretically investigate the influence of the field-like spin torque term on the oscillation characteristics of spin transfer oscillators, which are based on MgO magnetic tunnel junctions (MTJs) consisting of a perpendicular magnetized free layer and an in-plane magnetized pinned layer. It is demonstrated that the field-like torque has a strong impact on the steady-state precession current region and the oscillation frequency. In particular, the steady-state precession can occur at zero applied magnetic field when the ratio between the field-like torque and the spin transfer torque takes up a negative value. In addition, the dependence of the oscillation properties on the junction sizes has also been analyzed. The results indicate that this compact structure of spin transfer oscillator without the applied magnetic field is practicable under certain conditions, and it may be a promising configuration for the new generation of on-chip oscillators.

Fabrication of Spin‐Transfer Nano‐Oscillator by Colloidal Lithography

We fabricate nanoscale spin‐transfer oscillators (STOs) by utilizing colloidal nanoparticles as a lithographic mask. By this approach, high quality STO devices can be fabricated, and as an example the fabricated STO devices using MgO magnetic tunnel junction as the basic cell exhibit current‐induced microwave emission with a large frequency tunability of 0.22 GHz/mA. Compared to the conventional approaches that involve a step of defining nanoscale elements by means of electron beam lithography, which is not readily available for many groups, our strategy for STO fabrication does not require the sophisticated equipment (~ million dollars per unit) and expensive lithography resist, while being cost‐effective and easy to use in laboratory level. This will accelerate efforts to implement STO into on‐chip integrated high‐radio frequency applications.