Metal Oxide Semiconductor Research Articles

Ultrathin nanocapacitor assembled via atomic layer deposition

We fabricated ultrathin metal - oxide - semiconductor (MOS) nanocapacitors using atomic layer deposition. The capacitors consist of a bilayer of Al2O3 and Y2O3 with a total thickness of ~10 nm, deposited on silicon substrate. The presence of the two materials, each slab being ~5 nm thick and uniform over a large area, was confirmed with Transmission Electron Microscopy and X-ray photoelectron spectroscopy (XPS). The capacitance in accumulation varied from 1.6 nF (at 1MHz) to ~2.8 nF (at 10 kHz), which is one to two orders of magnitude higher than other nanocapacitors. This high capacitance is attributed to the synergy between the dielectric properties of ultrathin Al2O3 and Y2O3 layers. The electrical properties of the nanocapacitor are stable within a wide range of temperatures, from 25 °C to 150 °C, as indicated by capacitance-voltage (C - V). Since the thickness-to-area ratio is negligible, the nanocapacitor could be simulated as a single parallel plate capacitor in COMSOL Multiphysics, with good agreement between experimental and simulation data. As a proof-of-concept we simulated a MOSFET device with the nanocapacitor gate dielectric, whose drain current is sufficiently high for micro and nanoelectronics integrated circuits, including for applications in sensing.

On-demand performance optimization of AlGaN/GaN high electron mobility transistors using stoichiometric variation of dielectric alloy AlxTayO

The current research investigates the potential advantages of optimally combining wide bandgap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. Various compositions of 10 nm AlxTayO oxide films are grown on the Al0.3Ga0.7N/GaN heterostructure by co-sputtering Al and Ta metals, followed by thermal oxidation at 500 °C. The average root-mean-square roughness of the grown oxide films is ∼1.2–1.4 nm compared to 0.4 nm for as-deposited metal. X-ray photoelectron spectroscopy and transmission electron microscopyconfirm the formation and thickness of the grown oxide films. The bandgap (Eg) of the oxide films calculated from O1s electron energy loss spectra show a linear increase from 4.85 eV for pure Ta2O5 to 6.4 eV for pure Al2O3. The dielectric constant (εox) calculated from capacitance–voltage (CG−VG) measurements decreases linearly from 25.7 for Ta2O5 to 7.9 for Al2O3. The interface trap density (Dit) is estimated from the frequency dispersion of capacitance–voltage (CG−VG) characteristics. The DC and radio frequency (RF) characteristics of AlxTayO/Al0.3Ga0.7N/GaN high electron mobility transistor (HEMT) devices are measured and compared with the Schottky HEMT devices (without any gate oxide). Compared to Schottky HEMT devices, AlxTayO/Al0.3Ga0.7N/GaN HEMT devices show superior DC characteristics, which helps us achieve maximum RF output power. Furthermore, the OFF-state measurements show that the AlxTayO/Al0.3Ga0.7N/GaN HEMT devices can sustain higher source-to-drain voltages, from a minimum of 88 V on pure Ta2O5 metal-oxide-semiconductor (MOS)-HEMTs to a maximum of 138 V on pure Al2O3 MOS-HEMTs before the dielectric breakdown happens, compared to a 57 V breakdown voltage on Schottky HEMT devices. An oxide variation of AlxTayO, with Al composition ratio of 0.34, shows an exceptional ION/IOFF ratio of 4 × 1011, a gate leakage current of 8 × 10−12 A/mm, a near-ideal subthreshold slope of 63.8 mV/dec, and the unity current gain frequency (fT) of 25.6 GHz.

Large-scale fabrication of meta-axicon with circular polarization on CMOS platform

Abstract Metasurfaces, consisting of arrays of subwavelength structures, are lightweight and compact while being capable of implementing the functions of traditional bulky optical components. Furthermore, they have the potential to significantly improve complex optical systems in terms of space and cost, as they can simultaneously implement multiple functions. The wafer-scale mass production method based on the CMOS (complementary metal oxide semiconductor) process plays a crucial role in the modern semiconductor industry. This approach can also be applied to the production of metasurfaces, thereby accelerating the entry of metasurfaces into industrial applications. In this study, we demonstrated the mass production of large-area meta-axicons with a diameter of 2 mm on an 8-inch wafer using DUV (Deep Ultraviolet) photolithography. The proposed meta-axicon designed here is based on PB (Pancharatnam–Berry) phase and is engineered to simultaneously modulate the phase and polarization of light. In practice, the fabricated meta-axicon generated a circularly polarized Bessel beam with a depth of focus (DoF) of approximately 2.3 mm in the vicinity of 980 nm. We anticipate that the mass production of large-area meta-axicons on this CMOS platform can offer various advantages in optical communication, laser drilling, optical trapping, and tweezing applications.

An investigation of γ radiation detection with a CMOS imaging sensor.

In this study, a feasibility of γ radiation detection using complementary metal-oxide semiconductor (CMOS) image sensors with a neural network algorithm to extract the γ rays interacted pixels has been investigated. The responses characteristics of the CMOS imaging sensor to γ-ray is studied by placed in a γ fields produced by standard60Co or137Cs isotope sources. The supported preview frame rate of the CMOS image sensor is 25 fps, establishing the functional relationship between the gray level histograms and the dose rate through the neural network, the high energy γ-ray from60Co and137Cs source radiation dose rate in µSv/h level can be detected using the CMOS imaging sensor. The results show that the proposed method can effectively identify the number of photon particles which detected by the radiation monitoring system based on CMOS image sensor, and infer that the CMOS imaging sensor with a radiation signal extraction algorithm can be used as a dose warner for radiation protection purpose.

Nonlinear electronic devices on single-layer CVD graphene for thermistors

In this article, we present simple, cost-effective, passive (non-gated) electronic devices based on single-layer (SL) chemical vapor deposited (CVD) graphene that show nonlinear and asymmetric current-voltage characteristics (CVCs) at ambient temperatures. Al2O3-Ti-Au contacts to graphene results in a nonlinear resistance to achieve nonlinearity in the CVC. Upon transfer to polyethylene terephthalate, the CVD-grown SL graphene shows mobility of 6200 cm2V-1S-1. We have observed both thermoelectric effect and thermoresistive sensing in the fabricated devices such as voltage and temperature concerning change in electronic power and resistance through asymmetric and nonlinear CVC. The device is stable both at low and high voltages (±200 mV to ±4 V) and temperatures (4 K - 300 K). Graphene-based thermosensing devices can be ultra-thin, cost-effective, non-toxic/organic, flexible, and high-speed for integration into future complementary metal-oxide semiconductor (CMOS) interface, and wearable self-power electronics. A strong negative temeperature coefficent of resistance is demonstrated in the realized nonlinear graphene-integrated resistors for its application in NTC thermistors.

Process optimization of preparing CMOS backplane for ultrahigh pixel density red Micro-LED display

Abstract In this paper, an AlGaInP-based red Micro-LED display measured 17.78 mm (0.7 in), with a resolution of 1920 × 1080, a light-emitting mesa size of 6 μm, a pixel pitch of 8 μm and a pixel density of 3175 PPI was designed and fabricated with a CMOS driver backplane. The metal bump preparation technology of the complementary metal-oxide semiconductor driver backplane was optimized to enhance the bonding yield and create an optimal display effect. Improper sizing of the etched window in the SiO2 insulation and passivation layer can have a detrimental impact on the metal bump preparation and subsequent bonding process. By optimizing the settings of lithography and dry etching, the appropriate size of the etched aperture in the passivation layer was achieved. The high density, small size, and large aspect ratio of the photoresist openings for the bump fabrication made it challenging to remove the photoresist following the metal evaporation. To successfully remove the photoresist, it is important to carefully choose suitable experimental conditions for the removal. Afterwards, an 8 μm AlGaInP-based red Micro-LED display was effectively integrated with complementary metal-oxide semiconductor using flip-chip bonding technology. This work may be of reference value to those who work on ultrahigh density red Micro-LEDs that is challenging but crucial for future full color micro displays.

Design of SRAM cell using an optimized D-latch in quantum-dot cellular automata (QCA) technology

A newer nanoscale technology called quantum-dot cellular automata (QCA) has been used by researchers to design digital circuits in place of the more traditional complementary metal–oxide semiconductor (CMOS) technology. This recent development in the technology change is due to the problems faced by CMOS technology in terms of power consumption and physical limitations. The advantages of QCA technology over CMOS technology are high density, low power consumption, high-speed operation, and less footprint area. This research provides a novel circuit for D-latch and static random access memory (SRAM) cells based on QCA technology. Initially, a D-latch circuit is proposed with a layout area of 0.01 μm2, a 0.5 clock cycle delay (latency), and a cell count of 18 QCA cells. Furthermore, an SRAM cell is proposed using the same D-latch circuit, which uses cell counts of 26 QCA cells and contributes to a layout area of 0.02 μm2 with a 0.75 clock cycle delay (latency). It is observed that our proposed circuits have a smaller layout area, fewer QCA cell counts, and a lower clock cycle delay (latency) than existing circuits.

Scalable on-chip multiplexing of silicon single and double quantum dots

Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers. For this goal, ultra-low-power on-chip cryogenic CMOS (cryo-CMOS) electronics for control, read-out, and interfacing of the qubits is an important milestone. We report on-chip interfacing of tunable electron and hole QDs by a 64-channel cryo-CMOS multiplexer with less-than-detectable static power dissipation. We analyze charge noise and measure state-of-the-art addition energies and gate lever arm parameters in the QDs. We correlate low noise in QDs and sharp turn-on characteristics in cryogenic transistors, both fabricated with the same gate stack. Finally, we demonstrate that our hybrid quantum-CMOS technology provides a route to scalable interfacing of a large number of QD devices, enabling, for example, variability analysis and QD qubit geometry optimization, which are prerequisites for building large-scale silicon-based quantum computers.

Electron Irradiation on Metal Oxide Silicon Field Effect Transistors in Space Applications

The space environment is hostile to most semiconductor electronic devices and components used for space applications. The radiation generally encountered in space are α, β, γ, x-ray, energetic electrons, protons, neutrons and ions of various kinds. Especially the Van Allen Belts consist of high energy electrons which are in continuous motion. Satellites systems operating in Low Earth Orbits (LEO) are prone to get exposed to high energy electrons. This paper describes the effect of electron beam irradiation on MOSFETs planned for space applications. The devices selected for the study are 2N6768 n- channel MOSFETs (JANTXV) procured from ISAC, Bangalore. The decapped MOSFETS are exposed to a beam of electrons for various doses ranging from 50 Gy to 10 KGy in the electron energy range 7 – 10 MeV using the electron accelerator facility at RRCAT, Indore. Pre and post- irradiation measurements of the electrical characteristics are undertaken to investigate the electron induced device degradation and damage. The dominant mechanism of the interaction of the electrons with semiconductors is to produce atomic displacement which can have serious impact on electrical characteristics. MOS (Metal oxide semiconductor) devices are the most sensitive of all semiconductor devices to radiation showing considerable degradation even for a relatively low dose of exposure to high energy electrons. The energy dissipated by electrons in semiconductors is sufficient to displace silicon atoms and causes a shift in the threshold voltage and leakage current. The study indicates that the gate threshold voltage substantially decreases with the increase in electron dose. The leakage current increases with dose which could have an impact on the performance of the device. The transconductance of the MOS transistor is found to decrease with increase in electron dose. The observed changes in the electrical characteristics upon electron irradiation are analysed and interpreted as due to trapped charges in the SiO2 layer and at the interface. The present investigation reveals that there is a remarkable degradation in threshold voltage and the leakage current displays substantial increase when the devices are exposed to electrons. This increase in leakage current can have significant impact on device performance in a radiation environment.

Investigation on oxygen vacancy regulation mechanism of ZnO gas sensors under temperature modulation mode to distinguish alcohol homologue gases

Homologous gases are difficult to be detected due to their similar chemical properties, especially for metal oxide semiconductor gas sensors whose selectivity has always been a significant challenge. Dynamic temperature modulation method with periodically changing operating temperature was used to detect alcohol homologous gases. However, there are still problems with the deviceization of heating control circuits. In this paper, dynamic temperature modulated method which needs a simple heating circuit is used to distinguish alcohol homologous gases in combination with oxygen vacancy modulation of ZnO gas sensors. Ethyl alcohol, n-propyl alcohol, isopropyl alcohol and n-butyl alcohol were measured by ZnO gas sensors with different oxygen vacancies content ratios under rectangular wave with a voltage range of 2–6 V. It was found that the greatest difference among the response curves when the material calcined at 600°C which has the largest oxygen vacancies content ratio. Finally, the recognition of the four homologue gases measured by ZnO-600 sensor was achieved by dynamic time warping and the recognition accuracy is 99.33 %.

ITO-Based Electrically Tunable Metasurface for Active Control of Light Transmission.

In recent years, the rapid development of dynamically tunable metasurfaces has provided a new avenue for flexible control of optical properties. This paper introduces a transmission-type electrically tunable metasurface, employing a series of subwavelength-scale silicon (Si) nanoring structures with an intermediate layer of Al2O3-ITO-Al2O3. This design allows the metasurface to induce strong Mie resonance when transverse electric (TE) waves are normally incident. When a bias voltage is applied, the interaction between light and matter is enhanced due to the formation of an electron accumulation layer at the ITO-Al2O3 interface, thereby altering the resonance characteristics of the metasurface. This design not only avoids the absorption loss of metal nanostructures and has a large modulation depth, but also shows compatibility with complementary metal oxide semiconductor (CMOS) technology.

CMOS-compatible plasmonic magnetic field sensor: An alternative approach using ultra-compact MIM configuration

This paper introduces a novel magnetic field sensor (MFS) that utilizes a metal-insulator-metal (MIM) waveguide integrated with a resonator structure and incorporates water-based Fe3O4 magnetic fluid. The sensor uses titanium nitride (TiN) as the plasmonic material which offers numerous advantages over conventional noble plasmonic materials. The sensor takes advantage of the tunable optical properties of the magnetic fluid and TiN to detect changes in the external magnetic field and quantify the magnetic field strength which has been demonstrated using the Finite Element Method (FEM). Our proposed MFS exhibits a high sensitivity of 11.97 pm/Oe, a narrow-band full-width half maximum of 93.66 nm, and a resolution of 8.36 × 10−4 Oe. The sensor is also compatible with complementary metal oxide semiconductor (CMOS) fabrication techniques, which enables chip-scale integration and low-cost production. The sensor can be used for various applications in navigation, military, space, healthcare, and beyond.

Real-time, specific, and label-free transistor-based sensing of organophosphates in liquid

Organophosphates (OP), commonly used in agriculture and as chemical warfare agents, pose significant environmental risks, necessitating real-time, low-cost OP detection methods. In particular, liquid-phase OP sensing with minimal sample volumes is crucial. While several methods allow rapid detection of low concentrations of OP vapors, they are effective only in the short term, while vapors are still being produced. Many OP compounds are semi-volatile, leading to the contamination of water, soil, and surfaces, posing a risk of secondary, long-term exposure. Detecting this contamination requires methods that can be directly applied to droplets of the affected medium. Currently, no method provides the desired combination of ultra-sensitivity, quantitative detection, rapid response, and low-cost for detecting OPs in liquid samples. This study aims to demonstrate quantitative, low-cost, real-time, specific, and label-free OP sensing in ultra-small samples using a transistor-based approach. The current work employs the 2-(4-Aminophenyl)-1,1,1,3,3,3-hexafluoro-2-propanol (aminophenyl-HFIP) functionalized meta-nano-channel field-effect chemical sensor (MNChem sensor) to monitor the organophosphate, diethyl cyanophosphonate (DCNP), in liquid samples. The silicon component of the MNChem is fabricated using a complementary metal-oxide semiconductor (CMOS) process, and the amine-based chemical functionalization of the sensing area is performed post-fabrication. The MNChem sensor provides electrostatic control over the source-drain current (IDS), allowing an optimized channel configuration that efficiently transduces localized OP recognition events into significant IDS variations. Sensing is performed using 0.5 μL buffer solution to simulate a miniature field-deployable sensor for on-site liquid analysis. We report the sensing of DCNP with a limit-of-detection of 100 fg/mL, a dynamic range of 9 orders of magnitude, and excellent linearity (≥0.97) and sensitivity. Control measurements confirm the specificity and reliability of the sensor's response, validating its applicability. This study introduces a novel method for OP detection in contaminated droplets using a low-cost disposable transistor technology.

Taguchi Method Statistical Analysis on Characterization and Optimization of 18-nm Double Gate MOSFETs

A bi-layer graphene with a multigate structure was intensified and analysed on an 18-nm Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) device to obtain an optimal performance parameter. The device has a gate structure made of Titanium Dioxide (TiO2) that serves as a high-k material and a metal gate made of Tungsten Silicide (WSix). The Silvaco TCAD Software which are ATHENA and ATLAS modules were used to enhance the fabrication process of virtual devices and to verify the electrical properties of a specific device. According to the International Technology Roadmap Semiconductor (ITRS) specifications of 0.179 V ± 12.7% for threshold voltage (VTH) and 20 nA/m for leakage current (ILEAK), the Taguchi L9 orthogonal array strategy was used to improve the device process parameters for optimum VTH and ILEAK. For the NMOS device, the process parameter of VTH Adjust Implant Dose was used as the dominant factor while Source/Drain (S/D) Implant Energy was used as the adjustment factor whereby for PMOS device, S/D Implant Energy was the dominant factor while S/D Implant Tilt was the adjustment factor in order to achieve a robust design through the Taguchi method implementation. The percentage affecting the process parameter is then applied to the results of the signal to noise ratio (SNR) of Nominal-the-best (NTB) for VTH and Smaller-the-better (STB) for ILEAK.

Humidity-independent NO2 gas sensors based on ZnO-NiOFx nanocomposites and the synergistic humidity-immune effect of fluorine doped NiO

Clean, alternative energy sources, especially fuel cells, are gradually attracting global attentions while the produced toxic nitrogen dioxide (NO2) is a greatly hazardous chemical impacting their energy efficiencies. Metal oxide semiconductors (MOS) hold significant promise as NO2 sensors. However, intensive humidity interaction intensifies signal drifts and reliable response inhibitions under variable humidity conditions. In this study, we present a novel approach to address this issue by engineering in-situ F-doped NiO nanocomposites (NiOFx) decorated on ZnO snowflakes achieved through decomposition modulation of ZnOHF precursors. The optimized NO2 sensor demonstrates unparalleled humidity-independence across a wide operating temperature range with prime sensitivity, low detection limit and rapid response/recovery. Matrix algorithm is also implemented in highly precise NO2 identification under complicated atmospheric and humid conditions. Mechanism studies based on temperature programmed desorption (TPD), quasi in-situ X-ray photoelectron spectroscopy (Quasi in-situ XPS) reveal that F− dopants facilitate interfacial electron transferring and inhibit oxygen activity. In-situ diffuse reflectance infrared Fourier transform spectroscopy (In-situ DRIFTS) demonstrates that hygroscopic NiO and electronegative F− synergistically obstruct hydroxyl adsorptions on sensing materials. The innovative approach offers a promising solution for enhancing moisture resistance of MOS sensors for real-time NO2 concentration monitoring in fuel cells and provides valuable insights into anti-humidity mechanisms.

Significantly energy‐efficient ethanol sensor based on bougainvillea‐like Au/ZnO hierarchical nanostructured materials

AbstractThe energy consumption of MOS (metal oxide semiconductor) sensors has always been a challenge in improving their performance. In this study, bougainvillea‐like Au/ZnO nanostructures were successfully synthesized using the hydrothermal method and the sol fixation technique. The composition, crystallinity, crystal structure, and morphology of the materials were characterized using X‐ray diffraction, energy‐dispersive spectroscopy, and field emission scanning electron microscopy. The experimental results confirm the successful synthesis of a substantial quantity of bougainvillea‐like Au/ZnO nanostructures through nanoparticle self‐assembly. The sensitive performance of the bougainvillea‐like Au/ZnO sensor was evaluated using a CGS‐8 intelligent gas‐sensitive analysis system. Results demonstrate that modification of ZnO with Au in a bougainvillea‐like nanostructure significantly enhances sensitivity to ethanol vapor compared to those of unmodified material sensors. Specifically, the optimal work temperature was greatly reduced by 64%, whereas the sensitivity increased approximately 12 times and the response time decreased nearly 5 times. The significantly enhanced ethanol sensitivity can be attributed to the precious metal modification and unique three‐dimensional morphology. It provides the necessary experimental exploration for reducing energy consumption and improving the performance of MOS gas sensors.

Enhanced Threshold Voltage and Improved Subthreshold Swing Using NiOX/ITO Reverse Bias Gated Diamond pMOS

An increase in the device performance of diamond‐based p‐type metal–oxide–semiconductor (pMOS) transistors using a combination of p‐type nickel oxide and n‐type indium tin oxide (NiOX/ITO) reverse bias diode as the gate dielectric is reported. Negative threshold voltage pMOS transistors are desirable for digital circuits and power applications for fail‐safe operation. A Schottky gate‐based conventional diamond pMOS transistor suffers from many limitations, including a positive threshold voltage (VT). Herein, it is experimentally demonstrated that NiOX/ITO gate dielectric with Al gate contact circumvents many critical limitations, providing a negative threshold voltage of −1.2 V, improved subthreshold slope of 145 mV dec−1, current ON/OFF ratio >107, and peak gate leakage current reduction >103. An Al/NiOX‐based control gate structure shifts the VTH negative with improvements in crucial device performances. Adding a reverse bias junction through the Al/ITO/NiOX heterointerface with the Al metal gate further improves performance. The measured device characteristics are explained in a common framework of energy band diagram for all the devices.

Single feature to achieve gas recognition: Humidity interference suppression strategy based on temperature modulation and principal component linear discriminant analysis

Metal oxide semiconductor (MOS) sensors have been broadly employed for gas detection. However, the distinctive chemical detection principle of MOS sensors renders them susceptible to interference by humidity. This paper proposes a novel method for suppressing humidity interference. This method possesses advantages, including rapid recognition, low power consumption, and the capability to achieve recognition using a single feature. Temperature modulation technology was used to record the sensor's resistance variation, and the response features of the obtained dynamic response signal are affected by both humidity and the measured gas. The suppression of humidity interference is achieved through the investigation of the response features of humidity and the measured gas. The response features of humidity and gas are amplified by column normalization. Principal Component Linear Discriminant Analysis (PC-LDA) is utilized to acquire humidity and gas information within data. Using ethanol as the primary experimental subject, suppression of humidity interference is achieved through a single feature (PC-LD2). Quantitative recognition of relative humidity (RH) can be achieved using PC-LD1. Multiple types of waveform and sensor were used to demonstrate the generalization of this method.

2D porous hexaniobate-bismuth vanadate hybrid photocatalyst for photodegradation of aquatic refractory pollutants

Metal oxide semiconductors are highly promising due to their excellent photocatalytic performance in the photodegradation of industrial waste containing refractory chemical compounds. A hybrid structure with other semiconductors provides improved photocatalytic performance. In this work, porous and two-dimensional (2D) hexaniobate-bismuth vanadate (Nb6-BiVO4) Z-scheme hybrid photocatalysts are synthesized by chemical solution growth (CSG) of BiVO4 over electrophoretically deposited Nb6 thin films. The structural and morphological analysis of Nb6-BiVO4 hybrid thin films evidenced the well-crystalline uniform growth of monoclinic scheelite BiVO4 over lamellar Nb6 nanosheets. The Nb6-BiVO4 hybrid thin films exhibit a highly porous randomly aggregated nanosheet network, creating the house-of-cards type morphology. The Nb6-BiVO4 hybrid thin films display a strong visible light absorption with band gap energy of 2.29 eV and highly quenched photoluminescence signal, indicating their visible light harvesting nature and intimate electronic coupling between hybridized species beneficial for photocatalytic applications. The visible-light-driven photodegradation performance of methylene blue (MB), rhodamine-B (Rh-B) dyes, and tetracycline hydrochloride (TC) antibiotic over Nb6-BiVO4 hybrid are studied. The best optimized Nb6-BiVO4 thin film shows superior photocatalytic activity for photodegradation of MB, Rh-B dyes, and TC antibiotic with photodegradation rates of 87.3, 92.8, and 64.7 %, respectively, exceptionally higher than that of pristine BiVO4. Furthermore, the mineralization study of Nb6-BiVO4 thin film is conducted using chemical oxygen demand (COD) analysis. The optimized Nb6-BiVO4 thin film shows superior percentage COD removal of 83.33, 85.42, and 61.36 % for MB, Rh-B dyes and TC antibiotic, respectively. The present results highlight the expediency of hybridization in enhancing the photocatalytic activity of pristine BiVO4 by minimizing its charge recombination rate and improving chemical stability.

Introducing oxygen vacancies into WO3 thin film for improving hydrogen sensing performance of Pd/WO3-x/AAO sensors

Introducing oxygen vacancy into semiconducting metal oxides (SMOs) is a strategic approach to promote their gas sensing performances. In this paper, the WO3-x thin films were meticulously deposited onto an anodic aluminum oxide (AAO) substrate, and the oxygen vacancies concentrations of WO3-x thin films were changed by adjusting the ratio of flux of Ar to O2 in magnetron sputtering process. Sequentially, a layer of palladium (Pd) was deposited on the WO3-x/AAO films, creating a nano-mesh structured hydrogen sensor with Pd as the catalytic element. The resulted amorphous WO3-x samples with varying concentration of oxygen vacancies were thoroughly analyzed using XPS and ESR, which confirmed that the oxygen vacancies concentration escalated with an increase in the ratio of flux of Ar to O2. The hydrogen sensitivity of prepared Pd/WO3-x/AAO sensors were examined. Our findings revealed an enhancement in hydrogen sensitivity for the sensors with an optimal concentration of oxygen vacancies. However, an excess of these vacancies was found to deteriorate their hydrogen sensing performance. Notably, the optimized Pd/WO3-x/AAO sensor exhibited a marked response even at a hydrogen concentration as low as 100 ppb, demonstrating its high sensitivity and selectivity towards hydrogen detection.