Metal Insulator Research Articles

Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

The role of ex-situ HfO2 passivation in in-situ Si3N4/AlN/GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) to improve the device performance and protect the device from severe degradation under high-energy X-ray irradiation has been investigated. Here, the root cause and mechanism for the degradation have been studied utilizing different material/device characterizations. X-ray photoelectron spectroscopy results suggest that several Si-N bonds in stoichiometric Si3N4 and Hf-O bonds in HfO2 passivation film can be broken under X-ray irradiation, where numerous charges might be trapped easily and deteriorate the interface quality. Furthermore, due to the generation of chemical vacancies under X-ray, a band tail near the edge of valence band maximum in Si3N4 and HfO2 films can be created. The obtained results suggest that MIS-HEMT fabricated with an atomic layer deposited (ALD)-HfO2 (MIS-HEMT B) has relatively greater performance compared to MIS-HEMT fabricated without ex-situ HfO2 (MIS-HEMT A) according to the higher maximum drain current (Idmax), peak transconductance (gmmax) and lower current collapse, denoting the effectiveness of ALD-HfO2 to passivate the surface traps. It is noticed that X-ray irradiation induces numerous negative charges in the dielectric layers and degrades the device performance. Interestingly, after X-ray irradiation, the degradation rates in Idmax, gmmax, and current collapse are significantly lower in MIS-HEMT B compared to MIS-HEMT A, suggesting the potential irradiation hardening mechanism of ALD-HfO2 to protect the MIS-HEMTs from unexpected degradations during X-ray irradiation. Finally, these results emphasize the importance of high-quality dielectric films in MIS-HEMTs to enhance the device performance and safeguard the device under high-energy irradiation, especially in the space environment.

Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoNx Electrodes via TiN Passivation for DRAM Cell Capacitor Applications.

The continuous miniaturization of dynamic random-access memory (DRAM) capacitors has amplified the demand for electrode materials featuring specific characteristics, such as low resistivity, high work function, chemical stability, excellent interface quality with high-k dielectrics, and superior mechanical properties. In this study, molybdenum nitride (MoNx) films were deposited using a plasma-enhanced atomic layer deposition (PEALD) employing bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and NH3 plasma for DRAM capacitor electrode applications. Depending on the deposition temperatures of the PEALD MoNx films ranging from 200 to 400 °C, the Mo/N ratio and crystal structure varied, transitioning from the cubic NaCl-B1-type MoN phase with Mo/N ratio of 1.4 to the cubic γ-Mo2N phase with Mo/N ratio of 1.9. Notably, MoNx films grown at 400 °C exhibited low resistivity (435 μΩ·cm), a high work function (5.28 eV), and superior mechanical hardness (11.3 GPa) compared to ALD TiN films. Despite these excellent properties, the PEALD MoNx electrode demonstrated insufficient chemical stability, particularly in terms of oxidation resistance and interface quality with ALD HfxZr1-xO2 (HZO) films. This resulted in poor morphology and the formation of significant oxygen-deficient HZO layers (such as HfO2-x), leading to considerable degradation in the electrical performance of metal-insulator-metal (MIM) capacitors. To mitigate this issue, a thin (2.5-14 nm) ALD TiN layer was introduced as a passivation layer between the MoNx bottom electrode and HZO dielectric. The TiN-passivated MoNx (TiN/MoNx) electrode showed substantially enhanced oxidation resistance and reduced interfacial reactions with the HZO dielectric. Consequently, MIM capacitors with TiN/MoNx bottom electrodes demonstrated outstanding electrical performance, including excellent dielectric properties, low leakage current density, and high mechanical strength. Hence, this study proposes a promising candidates for storage nodes in the next-generation DRAM capacitors.

Consequences of Annealing on Metal–Insulator–Semiconductor Water Splitting Photoelectrocatalysts

Consequences of Annealing on Metal–Insulator–Semiconductor Water Splitting Photoelectrocatalysts

Numerical characterizations of the thermomechanical response of power modules with ceramic substrates and lead-free bonds

PurposeThe present paper aims to study the influence of the substrate system on the thermomechanical response of various lead-free die attach materials used in power electronics using nonlinear finite element simulations.Design/methodology/approachParticularly, three ceramic substrate systems, including direct copper bonded (DCB) and aluminum nitride (AlN) – as well as silicon nitride (Si3N4) –based insulated metal substrate (IMS) configurations are examined in this study. Additionally, three die attach systems, namely, silver-tin transient liquid phase (TLP), sintered silver (Ag) and sintered copper (Cu) are included in the analysis. ANSYS software is employed to build the finite element models of the power modules and to conduct the nonlinear thermomechanical investigations.FindingsThe simulation results revealed that the IMS, Si3N4 and DCB-based power modules end up with significantly lower interconnect inelastic strains and inelastic strain energies suggesting better fatigue life performance. Additionally, the bonding layer stresses and expected failure mechanism are not influenced by the substrate configuration rather than the bond material. For instance, the silver-tin TLP joints develop high stresses and hence brittle failures are expected. Nonetheless, the sintered Ag and sintered Cu have significantly lower stresses which could lead to fatigue-induced failures.Originality/valuePower electronics use various ceramic-based substrate systems because of their improved thermal conductivity, electrical insulation and heat resistance properties. The proper selection of the substrate structure could highly enhance the thermal fatigue of the power modules. Markedly, the findings of this research are useful for designing highly reliable and effective power modules continuously subjected to thermomechanical loadings.

The incorporation of armchair and zigzag boron nitride nanoribbons in graphene monolayers: An examination of the structural, electronic, and magnetic properties

The opening of an energy gap and generating magnetism in graphene are certainly the most significant and urgent topics in your current research. The majority of proposed applications for it require the ability to modify its electronic structure and induce magnetism in it. Here, using first-principles calculations utilizing the PBE and HSE06 functionals, we examine the structural, energetic, electronic, magnetic, and phonon transport characteristics of armchair graphene and boron nitride nanoribbons (aGNRs and aBNNRs), and zigzag graphene and boron nitride nanoribbons (zGNRs and zBNNRs) with varying widths. We shall emphasize the impact of incorporating aBNNRs and zBNNRs of varying widths into graphene monolayers (GMLs). The findings suggest that zBNNRs are easier to insert into GMLs than aBNNRs. A study of the average formation energies of graphene and boron nitride nanoribbons reveals that BNNRs have a formation energy that is at least twenty times greater than GNRs. We have observed energy gaps that can be classified into three distinct families in aGNRs, aBNNRs, and aBNNRs inserted into GML. In the zGNRs and zBNNRs inserted in GML, depending on the width, different magnetic orderings (antiferromagnetic, ferrimagnetic, and ferromagnetic), and electronic behaviors are observed (metallic, semimetallic, semiconductor, and topological insulator).

CMOS-compatible plasmonic magnetic field sensor: An alternative approach using ultra-compact MIM configuration

This paper introduces a novel magnetic field sensor (MFS) that utilizes a metal-insulator-metal (MIM) waveguide integrated with a resonator structure and incorporates water-based Fe3O4 magnetic fluid. The sensor uses titanium nitride (TiN) as the plasmonic material which offers numerous advantages over conventional noble plasmonic materials. The sensor takes advantage of the tunable optical properties of the magnetic fluid and TiN to detect changes in the external magnetic field and quantify the magnetic field strength which has been demonstrated using the Finite Element Method (FEM). Our proposed MFS exhibits a high sensitivity of 11.97 pm/Oe, a narrow-band full-width half maximum of 93.66 nm, and a resolution of 8.36 × 10−4 Oe. The sensor is also compatible with complementary metal oxide semiconductor (CMOS) fabrication techniques, which enables chip-scale integration and low-cost production. The sensor can be used for various applications in navigation, military, space, healthcare, and beyond.

Vectorial spatial differentiation of optical beams with metal–dielectric multilayers enabled by spin Hall effect of light and resonant reflection zero

We theoretically describe and numerically investigate the operation of “vectorial” optical differentiation of a three-dimensional light beam, which consists in simultaneous computation of two partial derivatives of the incident beam profile with respect to two spatial coordinates in different transverse electric field components. It is implemented upon reflection of the beam from a layered structure by simultaneously utilizing the effect of optical resonance and the spin Hall effect of light. As an example of a layered structure performing this operation, we propose a three-layer metal–dielectric–metal (MDM) structure. We show that by choosing the parameters of the MDM structure, it is possible to achieve the so-called isotropic vectorial differentiation, for which the intensity of the reflected optical beam (squared electric field magnitude) is proportional to the squared absolute value of the gradient of the incident linearly polarized beam. The presented numerical simulation results demonstrate high-quality vectorial differentiation and confirm the developed theoretical description.

Resistivity characteristics near the metal–insulator transition in the half-filled Anderson–Hubbard model

Resistivity characteristics near the metal–insulator transition in the half-filled Anderson–Hubbard model

Review of Innovative Cavity Designs in Metal–Insulator-Metal Waveguide-Based Plasmonic Sensors

AbstractPlasmonic sensors utilizing metal–insulator-metal (MIM) waveguides represent a significant advancement in sensing technology due to their high sensitivity and versatility. These sensors leverage surface plasmon polaritons to detect minute changes in the surrounding environment, making them highly effective for a range of applications. For instance, they can precisely measure variations in the Refractive Index, which is crucial for monitoring chemical concentrations and biological interactions. Additionally, MIM waveguides can be adapted to sense temperature fluctuations, pressure changes, and the presence of specific gases, providing valuable insights in fields such as environmental surveillance, medical diagnostics, and industrial processes. In recent years, a variety of sensor cavity shapes have been proposed to enhance sensor performance. This review examines how these innovative geometries optimize sensor cavities to achieve unprecedented levels of resolution and sensitivity, underscoring their transformative potential across a broad spectrum of scientific and practical applications.

Multi-color long-wave infrared perfect absorber based on a heavily doped semiconductor that is inverse-designed via machine learning.

Metamaterial perfect absorbers (MPAs) with high absorption, thin thickness, and custom-tailorable spectrum are in great demand in many applications, especially in photoelectric detectors. Presently, infrared (IR) focal plane array detectors based on type-II superlattice (T2SL) still face the challenge of a low absorption coefficient. Moreover, it is still difficult to integrate conventional metal-insulator-metal (MIM) MPA with a T2SL infrared detector, due to the incompatibility of fabrication processes. In addition, the need to achieve custom-tailorable multi-peak absorption in the long-wave infrared band is high, and the design process of an MPA with a complicated geometric shape is time-consuming. To tackle these problems, in this work, we replace the ground metal layer in a conventional MIM MPA with a heavily doped semiconductor (n++), whose growth process is compatible with the fabrication process of T2SL infrared detectors and thus can be integrated with them. Moreover, we set up a deep neural network (DNN) to associate the spectral response of the device with the corresponding structural parameters. In this way, we can quickly inverse design the infrared perfect absorber with multiple absorption peaks using a trained DNN. The designed devices can achieve three perfect absorption peaks in the wavelength range of interest (8 ∼ 13 µm), and the peak absorptivity generally reaches over 90%. Our work provides an effective method for the inverse design of n++IM MPA based on DNN, which is of significant guidance for the study of infrared MPA. Additionally, our work anticipates enhancing the detection performance of infrared detectors through absorption enhancement, indicating substantial application potential in the field of optically modulated infrared detectors.

Plasmonic MIM waveguide based FR sensors for refractive index sensing of human hemoglobin

Fano resonance (FR) is a universal phenomenon that is used to attain electromagnetic-induced transparency (EIT), high absorption and sensitivity, and low-power photonic devices. This work presents dual FR refractive index (RI) sensor models on a plasmonic metal-insulator-metal (MIM) waveguide system. The FR phenomenon is attained by including circular and elliptic nanorod defects in the bus waveguides. The resonances originate from the defect's narrow discreteness and the rectangular resonator's broad state. Analytical methods such as finite difference time domain (FDTD) and multimode interference coupled mode theory are adopted to analyze the FRs. The shapes of the Fano line and resonance peak amplitude can be tuned independently by controlling the diameter of the defects, the separation between the defects, and the coupling (between the resonator and the bus waveguide) distance. Moreover, the proposed structures detect the RI (human hemoglobin) variation in the bus waveguide and resonator. The obtained results with circular nanorod defect verify the autocorrelation coefficient of 99.92 %, ensuring the device's linearity and high performance. However, an autocorrelation of 99.7 % is attained by using two elliptic nanorod defects.

Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

Vertical Metal–Insulator–Semiconductor (MIS) capacitors with an Al2O3 thin film as a gate insulator have been fabricated on homoepitaxial GaN-on-GaN samples. The effect of the annealing treatments on the MIS characteristics has been investigated exploring two different approaches: Post-insulator-Deposition-Annealing (PDA) and Post-gate-Metallization-Annealing (PMA), i.e., annealing on the bare Al2O3 layer and annealing after the gate metallization deposition on Al2O3. The direct comparison between PDA and PMA is crucial to understand the impact of the metal/dielectric interface quality on the behavior of the Al2O3/GaN MIS capacitors. The efficacy of annealing has been monitored as a function of metal gates having different work functions: nickel (Ni), molybdenum (Mo), and tantalum (Ta). It has been found that both PDA and PMA approaches are equally able to improve the Al2O3/GaN interface electrical quality. However, the PMA demonstrates an additional beneficial effect on the metal/Al2O3 interface. In particular, the possible chemical reactions activated by the annealing process at the metal/dielectric interface can perturb the known metal/dielectric dipole responsible for Fermi-level pinning phenomena, causing a positive shift of the flat voltage (VFB), which depends on the metal, and approaching the theoretical value in the case of Mo and Ta.

Electrostatic interference control of a high-energy coherent electron beam using three-element Boersch phase shifters

Static phase shifters have been intensely studied for generating two- and three-dimensional electron beam patterns. However, those are restricted to specific electron beam energies and microscope settings. Aiming at overcoming such limitations, the development of programmable phase shifters based on e.g. a Boersch phase is an active field of research. We recently demonstrated a three-element Boersch phase shifter device [Thakkar et al., J. Appl. Phys. 128, 134502 (2020)], which was fabricated by electron beam lithography and is compatible with up-scaling. However, it suffers from parasitic beam deflection and cross-talk. Here, we report a five-layer phase shifter device, which is based on a metal–insulator–metal–insulator–metal structure as originally envisioned by Boersch that reduces cross-talk. We demonstrate a three-element Boersch phase shifter that shows minimal beam deflection of voltage-controlled three-electron-beam interference patterns in a transmission electron microscope operated at 200 keV. The feasibility of using such multi-element phase shifter arrays is discussed in this article.

Pseudo-proper two-dimensional electron gas formation

Abstract In spite of the interest in the two-dimensional electron gases (2DEGs) experimentally found at surfaces and interfaces, important uncertainties remain about the observed insulator–metal transitions (IMTs). Here we show how an explicit pseudo-proper coupling of carrier sources with a relevant soft mode significantly affects the transition. The analysis presented here for 2DEGs at polar interfaces is based on group theory, Landau–Ginzburg theory, and illustrated with first-principles calculations for the prototypical case of the LaAlO 3 / SrTiO 3 interface, for which such a structural transition has recently been observed. This direct coupling implies that the appearance of the soft mode is always accompanied by carriers. For sufficiently strong coupling an avalanche-like first-order IMT is predicted.

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

This paper reports a non-recessed normally off AlGaN/GaN high-electron-mobility transistor (HEMT) with a charge trapping gate dielectric stack. The charge trapping gate dielectric stack featuring a low density of fixed positive charges consists of an O3-based Al2O3 tunneling layer and an O3-based HfO2 blocking layer, both deposited via atomic layer deposition. For HEMT with a 15 nm AlGaN barrier layer, a threshold voltage of 2.57 V and an on-resistance of 8.50 Ω × mm are achieved. For positive bias temperature instability (PBTI) testing, the electric field provided by the 15 nm AlGaN layer serves as a barrier to channel carriers, significantly enhancing the PBTI test stability. The optimized gate dielectric stack enables the fabrication of the non-recessed normally off metal–insulator–semiconductor-HEMT with enhanced threshold voltage (Vth) stability.

Fabrication of Electrospun Porous TiO2 Dielectric Film in a Ti–TiO2–Si Heterostructure for Metal–Insulator–Semiconductor Capacitors

The development of metal–insulator–semiconductor (MIS) capacitors requires device miniaturization and excellent electrical properties. Traditional SiO2 gate dielectrics have reached their physical limits. In this context, high-k materials such as TiO2 are emerging as promising alternatives to SiO2. However, the deposition of dielectric layers in MIS capacitors typically requires high-vacuum equipment and challenging processing conditions. Therefore, in this study, we present a new method to effectively fabricate a poly(vinylidene fluoride) (PVDF)-based TiO2 dielectric layer via electrospinning. Nano-microscale layers were formed via electrospinning by applying a high voltage to a polymer solution, and electrical properties were analyzed as a function of the TiO2 crystalline phase and residual amount of PVDF at different annealing temperatures. Improved electrical properties were observed with increasing TiO2 anatase content, and the residual amount of PVDF decreased with increasing annealing temperature. The sample annealed at 600 °C showed a lower leakage current than those annealed at 300 and 450 °C, with a leakage current density of 7.5 × 10−13 A/cm2 when Vg = 0 V. Thus, electrospinning-based coating is a cost-effective method to fabricate dielectric thin films. Further studies will show that it is flexible and dielectric tunable, thus contributing to improve the performance of next-generation electronic devices.

Electronic vs phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition

Understanding the thermal conductivity of chromium-doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain thermoreflectance technique to measure the thermal conductivity of chromium-doped V2O3 across varying concentrations, spanning the doping-induced metal–insulator transition. In addition, different oxygen stoichiometries and film thicknesses were investigated in their crystalline and amorphous phases. Chromium doping concentration (0%–30%) and the degree of crystallinity emerged as the predominant factors influencing the thermal properties, while the effect of oxygen flow (600–1400 ppm) during deposition proved to be negligible. Our observations indicate that even in the metallic phase of V2O3, the lattice contribution is the dominant factor in thermal transport with no observable impact from the electrons on heat transport. Finally, the thermal conductivity of both amorphous and crystalline V2O3 was measured at cryogenic temperatures (80–450 K). Our thermal conductivity measurements as a function of temperature reveal that both phases exhibit behavior similar to amorphous materials, indicating pronounced phonon scattering effects in the crystalline phase of V2O3.

Capacitance-Voltage Fluctuation of SixNy-Based Metal-Insulator-Metal Capacitor Due to Silane Surface Treatment.

In this study, we analyze metal-insulator-metal (MIM) capacitors with different thicknesses of SixNy film (650 Å, 500 Å, and 400 Å) and varying levels of film quality to improve their capacitance density. SixNy thicknesses of 650 Å, 500 Å, and 400 Å are used with four different conditions, designated as MIM (N content 1.49), NEWMIM (N content 28.1), DAMANIT (N content 1.43), and NIT (N content 0.30). We divide the C-V characteristics into two categories: voltage coefficient of capacitance (VCC) and temperature coefficient of capacitance (TCC). There was an overall increase in the VCC as the thickness of the SixNy film decreased, with some variation depending on the condition. However, the TCC did not vary significantly with thickness, only with condition. At the same thickness, the NIT condition yielded the highest capacitance density, while the MIM condition showed the lowest capacitance density. This difference was due to the actual thickness of the film and the variation in its k-value depending on the condition. The most influential factor for capacitance uniformity was the thickness uniformity of the SixNy film.

Thermochromic properties and surface chemical states of reactive magnetron sputtered vanadium oxide thin films at various deposition pressures

Vanadium oxide thin films were prepared using reactive magnetron sputtering method, varying the deposition pressures from 4 to 10 mTorr while maintaining the other sputtering parameters constant. Our investigations revealed sensitive dependence of deposition pressure, chemical states of the V and O atoms, crystal phases, and thermochromic (TC) optical modulation. Specifically, the film deposited at 8 mTorr displayed distinct TC characteristics with a prevalent monoclinic m-VO2 phase according to X-ray diffraction (XRD), supported by X-ray photoelectron spectroscopy (XPS). Optical transmittance modulation and electrical property measurements revealed a metal–insulator transition (MIT), confirming the intimate connection between TC characteristics and presence of the m-VO2 phase. Films deposited at pressures lower or higher than 8 mTorr exhibited typical semiconductor behavior without TC characteristics, further supported by in situ XRD, where (110) plane shifted to lower angle upon heating above τC. Chemical state analysis by XPS revealed a clear correlation between V−O peaks and the presence of a VO2 phase, with the film deposited at 8 mTorr displaying relatively large peak fitted area indicative of the VO2 phase. These findings highlight the critical and sensitive dependence of the deposition conditions in tailoring the properties of vanadium oxide thin films and provide valuable insights for potential applications in chromogenic films.

Optimized TCR and MR properties of La0.7-xSmxCa0.3MnO3 ceramics by Sm3+ doping

La0.7Ca0.3MnO3 (LCMO), with its high temperature coefficient of resistance (TCR) and large magnetoresistance (MR) effect, has emerged as a leading material in the field of new multi-functional ceramics. Enhancing the magnetoresistive effect of LCMO in low magnetic field and expanding its application range is one of the main research goals of this kind of materials. In this work, La0.7-xSmxCa0.3MnO3 (LSCMO) (0≤x≤0.09) ceramic targets with different doping amounts were successfully prepared by sol-gel method, and the influence mechanism of Sm3+ doping on the magnetoresistive effect and electrical transport performance of LSCMO was systematically analyzed. X-ray diffraction (XRD) results showed that the lattice parameters (a,b,c,V) of LSCMO decreased slightly, indicating that the doping amount of Sm3+ at the A-site increased. Scanning electron microscopy (SEM) showed that the grains were closely connected without obvious pores, the grain size decreased slightly. The ρ-T curve shows an obvious metal-insulator (M-I) transition, with the increase of Sm3+, the increase of resistivity, metal-insulator transition temperature (TMI) and ferromagnetic-paramagnetic (FM-PM) transition temperature (TC) move towards low temperature. When x=0.015, the peak value of TCR reaches 41.94%·K-1, and when x= 0.06, the peak value of MR reaches 80.25%, both TCR and MR are improved. The results show that: Sm3+ doping can effectively enhance the electromagnetic transport performance of LSCMO. This material has a very wide application prospect in the fields of magnetic storage, and infrared detection.