MEMS Switches Research Articles

Integrated Photonic MEMS Switch for Visible Light

Integrated Photonic MEMS Switch for Visible Light

Nonvolatile Silicon Photonic MEMS Switch Based on Centrally-Clamped Stepped Bistable Mechanical Beams

Nonvolatile Silicon Photonic MEMS Switch Based on Centrally-Clamped Stepped Bistable Mechanical Beams

Temperature Effects in Packaged RF MEMS Switches with Optimized Gold Electroplating Process.

Due to its excellent electrical performance, mechanical reliability, and thermal stability, electroplated gold is still the most commonly used material for movable beams in RF MEMS switches. This paper investigates the influence of process conditions on the quality and growth rate of gold electroplating, and the optimized process parameters for the gold electroplating process are obtained. The characterization of the optimized electroplated gold layer shows that it has small surface roughness and excellent thermal stability. With this optimized gold electroplating process, the RF MEMS switches are fabricated and hermetic packaged. In order to obtain the temperature environment adaptability of the packaged switch, the influence of working temperature is studied. The temperature effects on mechanical performance (includes pull-in voltage and lifetime) and RF performance (includes insertion loss and isolation) are revealed.

Stress Suppression Design for Radiofrequency Microelectromechanical System Switch Based on a Flexible Substrate.

A novel stress suppression design for flexible RF MEMS switches has been presented and demonstrated through theoretical and experimental research to isolate the stress caused by substrate bending. An RF MEMS switch with an S-shaped microspring structure was fabricated by the two-step etching process as a developmental step toward miniaturization and high reliability. The RF MEMS switches with an S-shaped microspring exhibited superior microwave performance and stable driving voltage under different substrate curvatures compared to the conventional non-microspring switches, demonstrating that the bending stress is successfully suppressed by the S-shaped microspring and the island structure. Furthermore, this innovative design could be easily extended to other flexible devices.

RF MEMS switch optimization using ANN and design of antenna with frequency reconfigurability

RF MEMS switch optimization using ANN and design of antenna with frequency reconfigurability

Demonstration of a spatial-division multiplexing self-healing ring network.

This work demonstrates a spatial-division multiplexing self-healing ring protection scheme. A 3-node, 2-fiber ring with a recirculating length of 139.3 km is implemented using 4-core weakly-coupled multicore working and protection fibers and supported by core-pumped multicore amplifiers. Each node implements a spatial channel switching scheme with 8×8 traffic switches and arrays of 2×2 MEMS switches for ring protection switching with fiber bending taps to simultaneously monitor the power on all cores of the working and protection fibers. We achieve an average loss around 2 dB per network element along the protection path, which enables the use of ring protection with minimal performance impact. With this scheme, we demonstrate the protection of a line-side traffic throughput above 120 Tb/s using polarization-multiplexed 16-ary quadrature-amplitude modulation signals across the C-band.

Design of Broadband High-Frequency Multi-Throw RF-MEMS Switches.

This paper introduces a broadband triple-pole triple-throw (3P3T) RF MEMS switch with a frequency range from DC to 380 GHz. The switch achieves precise signal control and efficient modulation through its six-port design. It achieves an insertion loss of -0.66 dB across its frequency range, with isolation and return loss metrics of -32 dB and -15 dB, respectively. With its low actuation voltage of 6.8 V and rapid response time of 2.28 μs, the switch exemplifies power-efficient and prompt switching performance. The compact design is ideal for integration into space-conscious systems. This switch is pivotal for 6G research and has potential applications in satellite communications, military radar systems, and next-generation radio applications that require multi-antenna access.

Low-loss vanadium dioxide-enabled mmWave tunable reflective electromagnetic surface with complementary unit cells for wave manipulation

This study presents a novel implementation of vanadium dioxide (VO2) phase change material in an electromagnetic (EM) surface with beam steering capabilities. For the first time, we present the design, fabrication, and measurement of a globally actuated, VO2-based beamforming reflective EM surface. We propose a design featuring complementary unit cells that enable beam steering with a single excitation, marking a pioneering use of low-loss VO2 in creating a complementary EM surface for the mmWave band. The unit cells incorporating VO2 exhibit low-loss characteristics, with −0.92 and −1.9 dB in the hot state and −0.49 and −0.25 dB in the cold state, respectively. We incorporate both positive and negative phase variants alongside two temperature-independent phase unit cells. The complementary design enables us to utilize two beam operating states, effectively exploiting the otherwise unused cold state. We experimentally demonstrated beamforming at ±5° and ±10° from the broadside. In the case of ±10°, the measured gains at 35 GHz in the cold and hot states were 19.4 and 20.3 dB, respectively, which aligned well with the simulated gains of 20.9 and 21.5 dB. Manipulation of the electromagnetic wave direction with a single excitation has the potential for imaging, sensing, and communication applications. The complementary unit cell design methodology can be further adapted for mmWave beamforming, absorbing, and cloaking reconfigurable EM surfaces. Furthermore, the use of VO2 can be extended up to sub-THz frequencies due to the wideband, low-loss characteristics compared with conventional reconfigurable devices, such as PIN diodes or MEMS switches.

An Approach to Near Zero Power Bi-Stable Driving With a Simple Pulse Signal for RF MEMS Switch

An Approach to Near Zero Power Bi-Stable Driving With a Simple Pulse Signal for RF MEMS Switch

Design and simulation of a novel RF MEMS switch anchored by springs three-levelly

Design and simulation of a novel RF MEMS switch anchored by springs three-levelly

Study on SR-Crossbar RF MEMS Switch Matrix Port Configuration Scheme with Optimized Consistency.

The performance consistency of an RF MEMS switch matrix is a crucial metric that directly impacts its operational lifespan. An improved crossbar-based RF MEMS switch matrix topology, SR-Crossbar, was investigated in this article. An optimized port configuration scheme was proposed for the RF MEMS switch matrix. Both the utilization probability of individual switch nodes and the path lengths in the switch matrix achieve their best consistency simultaneously under the proposed port configuration scheme. One significant advantage of this scheme lies in that it only adjusts the positions of the input and output ports, with the topology and individual switch nodes kept unchanged. This grants it a high level of generality and feasibility and also introduces an additional degree of freedom for optimizations. In this article, a universal utilization probability function of single nodes was constructed and an optimization objective function for the SR-Crossbar RF MEMS switch matrix was formulated, which provide a convenient approach to directly solving the optimized port configuration scheme for practical applications. Simulations to demonstrate the optimized dynamic and static consistencies were conducted. For an 8 × 8 SR-Crossbar switch matrix, the standard deviations of contact resistances of 128 units and losses of all 64 paths decreased from 1.00 and 0.42 to 0.51 and 0.23, respectively. These results aligned closely with theoretical calculations derived from the proposed model.

Design and simulation of a micro-coiled digitally-controlled variable inductor with a monolithically integrated MEMS switch

This work introduces the design, analysis, simulation, and a standard MEMS fabrication process for a three-dimensional micro-coil with a magnetic core and a digital switch configuration using a completely integrated, fully MEMS-compatible process to achieve a digitally controlled inductance. The proposed design can also be utilized as a micro-transformer. The proposed design consists of five identical 3D coils and their corresponding MEMS switches. These coils are digitally controlled to achieve a variable inductor ranging from one-fifth of the coil inductance up to five times the coil inductance. A standard five-layer Polymumps process is proposed to fabricate the micro-coils and the integrated switches. Each micro coil is anchored directly on-chip, which is connected to the input signal from one side, and the other is connected to the switch. The Ni-based magnetic core improves the coil’s response by confining and guiding the magnetic field in the magnetic device compared to Si core based by more than five times. The presented coil has the number of windings limited by the designed length and the minimum spacing that can be realized by standard optical lithography. The coil’s diameter is also restricted by the limits defined by optical lithography, whereas the maximum height realizable by the Polymumps process limits the height of the magnetic core and accordingly results in lower inductor performance. Based on this technique, we present coils ranging from 100 μm length and ten winding up to 1000 μm length and 100 windings. The new monolithically integrated MEMS switches act as selectors to achieve a variable inductance with digital control to allow the selection among n(n + 1)/2 inductance steps, where n is the number of coils.

Optimization of a waveguide-slot phase shifter controlled by a system of p-i-n-diodes or MEMS switches

Optimization of a waveguide-slot phase shifter controlled by a system of p-i-n-diodes or MEMS switches

A compact and reconfigurable C-band DGS-based power divider using RF MEMS capacitive switch

This article presents a reconfigurable and compact power divider design that utilizes a combination of defect structures in the ground plane (DGS) and capacitance loading using a unique RF MEMS switch on the sapphire substrate. The combination of these two techniques results in a reduced-size reconfigurable power divider, wherein the length of the quarter-wavelength transmission line is reduced to λ/16 from λ/4, and the higher-order harmonics are suppressed up to 40 GHz. The RF MEMS capacitive switch is designed, and its DC characteristics are simulated in coventorware. The RF characteristics of the designed power divider are simulated in Ansys HFSS 19.2. The power divider utilizing RF MEMS technology has been fabricated through surface micromachining, requiring only four masks for fabrication. According to measurement findings, insertion loss and return loss are 3.57 dB and 24.6 dB (at 4.4 GHz) and 3.82 dB and 22.06 dB (at 5.4 GHz) when the switch is on and off, respectively. The total area of the design is 3.1 mm2 (21.3% of the conventional power divider). The proposed design can suppress harmonics up to the 8th order by 10 dB. These features render it a viable option for employment in Radio Frequency Integrated Circuits (RFICs).

Analytical model and analysis of RF MEMS switch for Ka-band applications

Analytical model and analysis of RF MEMS switch for Ka-band applications

Design Guideline for a Cantilever-Type MEMS Switch with High Contact Force

Micromechanical switches are of significant interest for advanced radio frequency and microwave systems, but their practical implementation is limited by low reliability. Electrodes of a microscopic size develop weak contact force that leads to high and unstable contact resistance. The force is typically increased by using a sophisticated switch design with extended lateral dimensions, although a simple and compact cantilever is more preferable. The paper describes for the first time a comprehensive approach to enhance the force of an electrostatically actuated switch. The strategy is applied to a miniature device based on a 50 µm long cantilever. The contact force is increased from 10 to 112 µN, making the switch strong enough to achieve low and stable contact resistance. The restoring force is also enhanced in order to ensure reliable de-actuation. The growth of forces is accompanied by a reduction in the pull-in voltage. Connecting several cantilevers in parallel and manipulating the number and position of contact bumps additionally improves the force and mechanical stability of the switch. An optimal design contains a triple cantilever with two bumps. It provides 50% higher force per contact compared to the single-cantilever switch at the same pull-in voltage and keeps the advantages of a miniature device. The proposed design strategy may be used for building reliable MEMS switches.

MEMS Switch Based on a Cantilever with Increased Contact Force

MEMS Switch Based on a Cantilever with Increased Contact Force

Performance Calculation for a MEMS Switch with a Floating Electrode

Performance Calculation for a MEMS Switch with a Floating Electrode

Analysis of the Electrophysical Characteristics of the RF MEMS Switch Taking into Account the Influence of the Substrate Material

Analysis of the Electrophysical Characteristics of the RF MEMS Switch Taking into Account the Influence of the Substrate Material

Glass Package and Through Glass Via (TGV) for MEMS

Menlo Microsystems has introduced a glass-based MEMS switch that utilizes through glass via (TGV) technology. Created in the R&D labs at GE, these MEMS solutions combined with utilization of glass packaging, has enabled the creation of the highly reliable Ideal Switch™. It is the world’s smallest, most reliable, and efficient micro-mechanical switch that can be used for numerous applications, including power. Several advantages are gained by taking advantage of the low electrical loss of glass and hermetic TGV. The TGV technology enables >60% smaller package size relative to wirebond. Parasitics are reduced by >75% and devices have a wide operational bandwidth from DC to > 50 GHz. Devices can have dozens of switches in a small form factor that give reliable performance over billions of cycles. Leading up to the volume production of these devices, Menlo has helped drive the glass supply chain to an increased level of maturity. In this talk we will provide an overview of Menlo’s glass package for the Ideal Switch™ technology as well as discuss the growing maturity and emerging capabilities in the glass/TGV supply chain.