Median Dark Count Rate Research Articles

LinoSPAD2: an FPGA-based, hardware-reconfigurable 512×1 single-photon camera system.

We report on LinoSPAD2, a single-photon camera system, comprising a 512×1 single-photon avalanche diode (SPAD) front-end and one or two FPGA-based back-ends. Digital signals generated by the SPADs are processed by the FPGA in real time, whereas the FPGA offers full reconfigurability at a very high level of granularity both in time and space domains. The LinoSPAD2 camera system can process 512 SPADs simultaneously through 256 channels, duplicated on each FPGA-based back-end, with a bank of 64 time-to-digital converters (TDCs) operating at 133 MSa/s, whereas each TDC has a time resolution of 20 ps (LSB). To the best of our knowledge, LinoSPAD2 is the first fully reconfigurable SPAD camera system of large format. The SPAD front-end features a pitch of 26.2 μm, a native fill factor of 25.1%, and a microlens array achieving 2.3× concentration factor. At room temperature, the median dark count rate (DCR) is 80 cps at 7 V excess bias, the peak photon detection probability (PDP) is 53% at 520 nm wavelength, and the single-photon timing resolution (SPTR) is 50 ps FWHM. The instrument response function (IRF) is around 100 ps FWHM at system level. The LinoSPAD2 camera system is suitable for numerous applications, including LiDAR imaging, heralded spectroscopy, compressive Raman sensing, and other computational imaging techniques.

A Multi-Time-Gated SPAD Array with Integrated Coarse TDCs

Time-gating of single-photon avalanche diodes (SPADs) was commonly used as a method to reduce dark noise in biomedical imaging applications where photon events are correlated with a reference clock. Time-gating was also used to obtain timing information of photon events by shifting the gate windows applied to a SPAD array. However, in this approach, fine timing resolution comes at the cost of a lengthened measurement time due to the large number of counts required for each shift. As a solution, we present a multi-time-gated SPAD array that simultaneously applies shifted gate windows to an array of SPADs, which has the potential to reduce the measurement time compared to a single time gate window. Compared to similar works, this design has fully integrated the multi-gate generation using shared circuitry which also functions as a coarse time-to-digital converter. The proposed array, fabricated in the TSMC 65 nm standard CMOS process, achieved a median dark count rate (DCR) of 37 kHz, 4.37 ns gate widths, 550 ps timing resolution, and a peak photon detection probability (PDP) of 42.9% at 420 nm, all at a 0.8 V excess bias.

A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode With a Spherically Uniform Electric Field Peak

A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.13~\mu \text{m}$ </tex-math></inline-formula> CMOS technology is presented. The SPAD has a depleted absorption volume of approximately <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$15\,\,\mu \text{m}\,\,\times 15\,\,\mu \text{m}\,\,\times 18\,\,\mu \text{m}$ </tex-math></inline-formula> . Electrons generated in the absorption region are efficiently transported by drift to a central active avalanche region with a diameter of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2~\mu \text{m}$ </tex-math></inline-formula> . At the operating voltage, the active region contains a spherically uniform field peak, enabling the multiplication of electrons originating from all corners of the device. The advantages of the SPAD architecture include high NIR photon detection efficiency (PDE), drift-based transport, low afterpulsing, and compatibility with an integrated CMOS readout. A front-side illuminated device is fabricated and characterized. The SPAD has a PDE of 13% at wavelength 905 nm, an afterpulsing probability < 0.1% for a dead time of 13 ns, and a median dark count rate (DCR) of 840 Hz at room temperature. The device shows promising performance for time-of-flight applications that benefit from uniform NIR-sensitive SPAD arrays.

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

We present a 1 Mpixel single-photon avalanche diode camera featuring 3.8 ns time gating and 24 kfps frame rate, fabricated in 180 nm CMOS image sensor technology. We designed two pixels with a pitch of 9.4 µm in 7 T and 5.75 T configurations respectively, achieving a maximum fill factor of 13.4%. The maximum photon detection probability is 27%, median dark count rate is 2.0 cps, variation in gating length is 120 ps, position skew is 410 ps, and rise/fall time is &lt; 550 p s , all FWHM at 3.3 V excess bias. The sensor was used to capture 2D/3D scenes over 2 m with resolution (least significant bit) of 5.4 mm and precision better than 7.8 mm (rms). We demonstrate extended dynamic range in dual exposure operation mode and show spatially overlapped multi-object detection in single-photon time-gated time-of-flight experiments.

A $192\times128$ Time Correlated SPAD Image Sensor in 40-nm CMOS Technology

A <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$192 \times 128$ </tex-math></inline-formula> pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$18.4\,\,\mu \text {m} \times 9.2\,\,\mu \text{m}$ </tex-math></inline-formula> pixel contains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps full-width half-maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kframes/s through 64 parallelized serial outputs. Cylindrical microlenses with a concentration factor of 3.25 increase the fill factor to 42%. The median dark count rate (DCR) is 25 Hz at 1.5-V excess bias. A digital calibration scheme integrated into a column of the imager allows off-chip digital process, voltage, and temperature (PVT) compensation of every frame on the fly. Fluorescence lifetime imaging microscopy (FLIM) results are presented.

Dynamic range extension for photon counting arrays.

Confocal microscopes use photomultiplier tubes and hybrid detectors due to their large dynamic range, which typically exceeds the one of single-photon avalanche diodes (SPADs). The latter, due to their photon counting operation, are usually limited to an output count rate to 1/Tdead. In this paper, we present a thorough analysis, which can actually be applied to any photon counting detector, on how to extend the SPAD dynamic range by exploiting the nonlinear photon response at high count rates and for different recharge mechanisms. We applied passive, active event-driven and clock-driven (i.e. clocked, following quanta image sensor response) recharge directly to the SPADs. The photon response, photon count standard deviation, signal-to-noise ratio and dynamic range were measured and compared to models. Measurements were performed with a CMOS SPAD array targeted for image scanning microscopy, featuring best-in-class 11 V excess bias, 55% peak photon detection probability at 520 nm and >40% from 440 to 640 nm. The array features an extremely low median dark count rate below 0.05 cps/μm2 at 9 V of excess bias and 0°C. We show that active event-driven recharge provides ×75 dynamic range extension and offers novel ways for high dynamic range imaging. When compared to the clock-driven recharge and the quanta image sensor approach, the dynamic range is extended by a factor of ×12.7-26.4. Additionally, for the first time, we evaluate the influence of clock-driven recharge on the SPAD afterpulsing.

Enhancing Near-Infrared Photodetection Efficiency in SPAD With Silicon Surface Nanostructuration

We propose a straightforward technique to increase the near-infrared photo-detection efficiency (PDE) in single photon avalanche photodiodes (SPAD) manufactured in CMOS industrial foundries, without any change in the usual semiconductor process flow. The mask used for the photolithography of shallow trench isolation (STI) is modified to generate sub-wavelength patterns in the silicon area illuminated by incident light. The dimensions of the nanostructures are easily accessible by standard UV-lithography. The resulting improved anti-reflection effect and absorption in Si due to diffraction can provide up to 50% relative gain in PDE at 850-nm wavelength in simulation, while 25% gain is demonstrated in this paper, without degrading the median dark count rate (DCR) at ambient temperature. Some performance degradation is observed with the appearance of after-pulses, possibly due to the absence of surface passivation specific to the nanostructures in this first demonstration. The effect is angularly robust, relatively broadband, and relatively tolerant to fabrication errors. High PDE enables longer range or lower power consumption in applications for distance measurement with an active illumination, such as proximity sensing, 3-D ranging, or 3-D imaging.

First prototypes of two-tier avalanche pixel sensors for particle detection

In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50μm×75μm pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43×45μm2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV.

A 1024$\,\times\,$8, 700-ps Time-Gated SPAD Line Sensor for Planetary Surface Exploration With Laser Raman Spectroscopy and LIBS

A 1024 × 8 time-gated, single-photon avalanche diode line sensor is presented for time-resolved laser Raman spectroscopy and laser-induced breakdown spectroscopy. Two different chip geometries were implemented and characterized. A type-I sensor has a maximum photon detection efficiency of 0.3% and median dark count rate of 80 Hz at 3 V of excess bias. A type-II sensor offers a maximum photon detection efficiency of 19.3% and a median dark count rate of 5.7 kHz at 3 V of excess bias. Both chips have 250-ps temporal resolution and fast gating capability, with a minimum gate width of 1.8 ns for type I and 0.7 ns for type II. Raman spectra were successfully observed from natural minerals, such as calcite and willemite. With the use of subnanosecond gating, background fluorescence was significantly reduced.

A Reconfigurable Single-Photon-Counting Integrating Receiver for Optical Communications

A reconfigurable Single-Photon Avalanche Diode integrating receiver in standard 130 nm CMOS is presented for optical links with an array readout bandwidth of 100 MHz. A maximum count rate of 58 G photon/s is observed, with a dynamic range of ≈ 79 dB, a sensitivity of ≈ - 31.7 dBm at 100 MHz and a BER of ≈ 1 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> . The sensor core draws 89 mW at the maximum count rate and obtains a peak SNR of ≈157 dB. We investigate the properties of the receiver for optical communications in the visible spectrum, using its added functionality and reconfigurability to experimentally explore non-ideal influences. The all-digital 32 × 32 SPAD array, achieves a minimum dead time of 5.9 ns, and a median dark count rate of 2.5 kHz/SPAD. The internal gain of SPADs and spatio-temporal summation removes the need for analogue amplification. High noise devices can be weighted or removed to optimize the SNR. The power requirements, transient response and received data are explored and limiting factors similar to those of photodiode receivers are observed.

A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging Technology

A single-photon avalanche diode (SPAD) is reported in a 130-nm CMOS imaging process which achieves a peak photon detection efficiency (PDE) of ≈72% at 560 nm with >; 40% PDE from 410 to 760 nm. This is achieved by eliminating junction isolation, utilizing dielectric stack optimizations designed for CMOS imaging, and operating at high bias enabled by ac coupling. The 8-μm-diameter device achieves a low median dark count rate of 18 Hz at 2-V excess bias (VEB), a <; 60-ps FWHM timing resolution at 654 nm from VEB = 6 V to VEB = 12 V, and a <; 4% after-pulsing probability. This represents performance which is comparable to fully customized discrete SPADs.