Master Oscillator Power Amplifier Architecture Research Articles

Towards high-power MOPA architectures in single-mode fibers for mid-IR mode-locked operation.

We report on a master oscillator power amplifier (MOPA) system at 2.8 µm to achieve an average power of 10.28 W with a pulse energy and peak power of 403 nJ and 5.76 kW, respectively. The seed, a semiconductor saturable mirror (SESAM) based mode-locked linear cavity source, delivers approximately 70 ps pulses at 28.16 MHz. Two amplifier stages are utilized in counter-pumping and dual-pumping configurations to enable high extraction efficiency and signal gain. To the best of our knowledge, this result is the highest average power and pulse energy obtained from a SESAM-based 2.8 µm mode-locked laser employing ZBLAN fiber MOPA architecture. It paves the way for achieving high average power in-fiber nonlinear amplification in single-mode fibers in the mid-infrared wavelength region.

Free-running Yb:KYW dual-comb oscillator in a MOPA architecture.

Single-cavity dual-combs comprise a rapidly emerging technology platform suitable for a wide range of applications like optical ranging, equivalent time sampling, and spectroscopy. However, it remains a challenging task to develop a dual-comb system that exhibits low relative frequency fluctuations to allow for comb line resolved measurements, while simultaneously offering high average power and short pulse durations. Here we combine a passively cooled and compact dual-comb solid-state oscillator with a pair of core-pumped Yb-fiber-based amplifiers in a master-oscillator power-amplifier (MOPA) architecture. The Yb:KYW oscillator operates at 250 MHz and uses polarization multiplexing for dual-comb generation. To the best of our knowledge, this is the first demonstration of a single-cavity dual-comb based on this gain material. As the pulse timing characteristics inherent to the oscillator are preserved in the amplification process, the proposed hybrid approach leverages the benefit of both the ultra-low noise solid-state laser and the advantages inherent to fiber amplifier systems such as straight-forward power scaling. The amplifier is optimized for minimal pulse broadening while still providing significant amplification and spectral broadening. We obtain around 1 W of power per output beam with pulses then compressed down to sub-90 fs using a simple grating compressor, while no pre-chirping or other dispersion management is needed. The full-width half-maximum (FWHM) of the radio-frequency comb teeth is 700 Hz for a measurement duration of 100 ms, which is much less than the typical repetition rate difference, making this passively stable source well-suited for indefinite coherent signal averaging via computational phase tracking.

2.05-µm all-fiber laser source designed for CO2 and wind coherent lidar measurement.

This work reports on an all-fiber pulsed laser source for simultaneous remote sensing of CO2 concentration and wind velocity in the 2.05 µm region. The source is based on a polarization-maintaining master oscillator power amplifier (MOPA) architecture. Two narrow-linewidth master oscillators for ON-line/OFF-line CO2 differential absorption lidar operation alternately seed a four-stage amplifier chain at a fast switching rate up to 20 kHz. The MOPA architecture delivers laser pulses of 120 µJ energy, 200 ns duration (600 W peak power) at 20 kHz pulse repetition rate (2.4 W average power). The output linewidth is lower than 5 MHz, close to the pulse Fourier transform limit, and the beam quality factor is M2=1.12. The source also provides a pre-amplified 20 mW local oscillator with a relative intensity noise of -160dB/Hz that ensures optimal performance for future coherent detection.

A Dual-Wavelength Pulsed Laser Processing Platform for a-Si Thin Film Crystallization

Interest in laser crystallization (LC) of silicon (Si) thin films has been on the rise in fabrication of polycrystalline silicon (pc-Si) based thin/ultrathin photovoltaic solar cells and Si based thin film transistors (TFT). Laser based fabrication of device quality pc-Si thin films at room temperature is expected to be a key enabling technology because of its low energy, material and process time budget. Fabrication of high-quality pc-Si thin films without pre-/post-treatment at large is a disruptive technology which has the potential to revolutionize the Si thin film industry. We hereby describe in detail a multi-wavelength laser processing platform specially developed for crystallization of amorphous silicon (a-Si) thin films into pc-Si thin films. The platform has three main stages. The first stage consists of a nanosecond pulsed ytterbium (Yt3+) doped fibre-laser with a master oscillator power amplifier architecture, operating at a wavelength of 1064 nm with an adjustable repetition rate between 80 kHz–300 kHz. The output beam has a maximum power of 18 W with a pulse energy of 90 µJ. The pulse durations can be set to values between 15 ns–40 ns. The second stage has free-space optical elements for second harmonic generation (SHG) which produces an emission at a wavelength of 532 nm. Conversion efficiency of the SHG is 25% with an output pulse energy of 20 µJ. The platform provides two wavelengths at either 1064 nm or 532 nm in crystallization of a-Si films for different crystallization regimes. The last stage of the platform has a sample processing assembly with a line-focus, which has an x-y motorized stage on a vibration isolated table. Speed of the motorized stage can be set between 1 mm/s–100 mm/s. Stage speed and repetition rate adjustments help to adjust overlap of successive pulses between 97.22–99.99%. Our platform has variety of tune parameters that make it a uniquely flexible system for delicate Si thin film crystallization. A large selection of operational parameter combinations, the wavelength selection and simultaneous x-y scanning capability allow users to crystallize Si films on various substrates optimally. The operation wavelength choice can be done by considering optical absorption and thickness of a-Si films on different types of substrates. Hence, delivering precise amount of absorbed energy in the line-focus irradiation is useful in increasing the average size of crystalline domains; moreover, nucleation of crystallites can be initiated either from the top or bottom interface of the film. Continuous and simultaneous motion of the stage in two dimensions allows to process arbitrary continuous pc-Si geometries in a-Si film. In summary, our multi-wavelength laser processing platform offers all-in-one LC utility for intricate LC-Si processing.

Fourier-domain mode-locked laser combined with a master-oscillator power amplifier architecture

Originally introduced in 2005 for high-speed optical coherence tomography, the rapidly wavelength-swept Fourier-domain mode-locked (FDML) laser still, to this day, enables highest imaging speeds through a very high-speed spectral tuning capability. The FDML laser achieves a tuning bandwidth of over 1/10th of its center wavelength and can sweep this entire bandwidth in less than a microsecond. Interestingly, even though it covers a very broad spectral range, instantaneously it has a narrow spectral linewidth that puts it in a unique space compared to other high-speed broadband laser sources, e.g., mode-locked lasers or supercontinuum sources. Although it has been applied for nonlinear Raman spectroscopy and imaging, a current drawback of this continuous wave laser is the relatively low instantaneous power of 10-100mW. Here, we report the combination of an FDML laser with a master oscillator power amplifier (MOPA) architecture to increase the instantaneous power of the FDML for nonlinear optical interactions. The output of an FDML laser around 1060nm is modulated to short pulses by using an electro-optic amplitude modulator and subsequently amplified using ytterbium-doped fiber amplifiers (YDFAs). This generates a spectral rainbow of 65 picosecond pulses, where each pulse has a distinct, monochromatic wavelength. The instantaneous power can be adjusted by the YDFAs to reach nonlinear optical excitation regimes. This wavelength-swept FDML-MOPA laser will have a vast range of applications in, e.g., nonlinear optics, spectroscopy, imaging, and sensing.

2-μm double-pulse single-frequency Tm:fiber laser pumped Ho:YLF laser for a space-borne CO2 lidar.

In the framework of space-borne CO2 lidar development, the transmitter is a critical unit. We report on the development and the assessment of performances of a 2-μm single-frequency thulium fiber laser pumped Q-switched Ho:YLF laser. To fulfill the requirements of space-based operation, a master oscillator power amplifier architecture has been chosen, and the oscillator works in double-pulse operation. The transmitter can generate a single-mode dual wavelength emission "ON" and "OFF" around the R30e line of the 20013←00001 band of CO212. It delivers a pair of OFF-ON pulses with 12mJ and 42mJ energy, respectively, at a pulse repetition frequency of 303.5Hz. The pulse energy and central frequency stabilities are especially documented as well as pulse duration, polarization, overall efficiency, beam quality, pointing stability, and spectral purity. The possible limitations by light-induced damage or radiation-induced attenuation on the laser performances are also evaluated.

Watt-level green random laser at 532 nm by SHG of a Yb-doped fiber laser.

We have developed a watt-level random laser at 532nm. The laser is based on a 1064nm random distributed ytterbium (Yb) gain-assisted fiber laser seed with a 0.35nm linewidth and 900mW polarized output power. A study for the optimal length of the random distributed mirror was carried out. A Yb-doped fiber master oscillator power amplifier architecture is used to amplify the random seeder laser without additional spectral broadening up to 20W. By using a periodically poled lithium niobate crystal in a single-pass configuration, we generate in excess of 1W random laser at 532nm by second-harmonic generation (SHG) with an efficiency of 9%. The green random laser exhibits an instability <1%, an optical signal-to-noise ratio >70 dB, a 0.1nm linewidth, and excellent beam quality.

Watt-level single-frequency tunable neodymium MOPA fiber laser operating at 915-937 nm.

We have developed a Watt-level single-frequency tunable fiber laser in the 915-937nm spectral window. The laser is based on a neodymium-doped fiber master oscillator power amplifier architecture, with two amplification stages using a 20mW extended cavity diode laser as seed. The system output power is higher than 2W from 921 to 933nm, with a stability better than 1.4% and a low relative intensity noise.

Terahertz master-oscillator power-amplifier quantum cascade lasers

We report on the realization of a monolithically integrated master-oscillator power-amplifier architecture in a terahertz quantum cascade laser (THz-QCL) with a metal-metal waveguide. The master-oscillator section is a first-order distributed feedback (DFB) laser. Instead of using a thick anti-reflection coating, we exploit a diffraction grating together with an absorbing boundary in the power-amplifier section to efficiently extract the laser radiation and suppress the self-lasing in it. The devices demonstrate a stable generation and power amplification of single-mode emission. The amplification factor is about 5, and the output power is approximately twice that of the standard second-order DFB lasers fabricated from the same material. Emission beam pattern with a divergence angle of ∼18 × 40° is achieved. Our work provides an avenue for the realization of single-mode THz-QCLs with high output power and good beam quality.

High-power and low-intensity noise laser at 1064 nm.

We have developed a single-frequency, narrow-linewidth (Δν<50 kHz) laser operating at 1064nm with a high output power (50W). The laser is based on an ytterbium-doped fiber master oscillator power amplifier architecture with an output beam at the diffraction limit. An output power of 50W is obtained with two amplification stages using a 50mW diode laser seeder. We have carefully studied the relative intensity noise at each amplification stage. The detrimental effect due to stimulated Brillouin scattering on residual amplitude noise has been observed on the high-power booster stage. After careful optimization, this laser exhibits low intensity noise with a RMS value equal to 0.012% (1kHz/10MHz) at 50W.

Operation and beam profiling of an up to 200 kHz pulse-burst laser for Thomson scattering.

A new, high-repetition rate laser is in development for use on the Thomson scattering diagnostic on the Madison Symmetric Torus. The laser has been tested at a rate of 200 kHz in a pulse-burst operation, producing bursts of 5 pulses above 1.5 J each, while capable of bursts of 17 pulses at 100 kHz. A master oscillator-power amplifier architecture is used with a Nd:YVO4 oscillator, four Nd:YAG amplifiers, and a Nd:glass amplifier. A radial profile over the pulse sequence is measured by using a set of graphite apertures and an energy meter, showing a change in beam quality over a pulsing sequence.

Hybrid master oscillator power amplifier high-power narrow-linewidth nanosecond laser source at 257 nm

We report on a high-power narrow-linewidth pulsed laser source emitting at a wavelength of 257 nm. The system is based on a master oscillator power amplifier architecture, with Yb-doped fiber preamplifiers, a Yb:YAG single crystal fiber power amplifier used to overcome the Brillouin limitation in glass fiber and nonlinear frequency conversion stages. This particularly versatile architecture allows the generation of Fourier transform-limited 15 ns pulses at 1030 nm with 22 W of average power and a diffraction-limited beam (M(2)<1.1). At a repetition rate of 30 kHz, 106 μJ UV pulses are generated corresponding to an average power of 3.2 W.

Investigation of the arbitrary waveform semiconductor laser as seed light source for high energy laser

A pulse semiconductor laser modulated by arbitrary shaping electrical waveform is produced and the generated optical pulse can be taken as the seed resource for high-power laser facilities.Based on ultrawide band microwave device and microstrip line transmission delay application, an all-solid-state circuit for generating arbitrary modulation pulse to modulate the semiconductor laser is fabricated. For improving the semiconductor laser power, the output laser pulse is sent into erbium-doped fiber master oscillator power amplifier architecture for amplification. In the experiment, the output laser pulse can be arbitrarily adjusted at 1547.9 nm center wavelength, less than 10 ns duration, lower than 100 kHz repetition rate, and 330 ps time domain adjustment.