The carbon incorporation properties of GaN from ethylene and trimethylgallium precursors was studied by atmospheric pressure metal organic chemical vapor deposition. It is found that V-III ratio was the main restriction factor for carbon incorporation. Carbon concentration could be regulated effectively one order of magnitude by tuning V-III ratio for C2H4 doped GaN, and would be enhanced at relatively low V-III ratio for self-doped GaN. Low threading dislocation density and atomic flat surface of C2H4 doped GaN films was kept even if carbon doping concentration of 9E18/cm3 compared with UID-GaN and a high breakdown voltage of 2278 V at leakage current of 10µA was obtained in C2H4 doped GaN buffer layer.
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