Low Phase Noise Oscillator Research Articles

二次注入锁定低相噪光电振荡器及其稳定性控制电路的研制

Two-level injection-locked opto-electronic oscillator (OEO) is firstly proposed to get lower phase noise in this paper. A low-phase noise oscillator with single mode from a long-fiber based OEO injection-locked by a commercial microwave source injection-locks another long-fiber based OEO. Experimental data show that the SSB (single side band) phase noise at 10 kHz offset frequency of X-band OEO decreases from -121 dBc/Hz to -135 dBc/Hz after the first injection and to -146 dBc/Hz after the second injection. Such index is close to the reported index from America Naval Research Laboratory. In order to promote the OEO to the practical stage, a new stability circuit based on the phase-locked theory for OEO is proposed and verified by experiments.

Quasi-planar K-band push-push low phase noise oscillator stabilized by cavity resonator

The results of developing a K-band (24 GHz) push-push low phase noise transistor oscillator have been presented. This oscillator is stabilized by a rectangular resonant metallic cavity. The power level of output signal is −9.5 dBm, the fundamental harmonic suppression is 21 dB. Single sideband (SSB) phase noise spectral density of −98 dBc/Hz at 10 kHz and −128 dBc/Hz at 100 kHz offset from the carrier frequency is at the level of dielectric resonator oscillators (DRO) scaled to the same frequency. The oscillator features a compact size, low cost quazi-planar design and it is built using commercially available off the shelf parts.

基于光纤延时线的低相噪光电振荡器与高灵敏度相噪测量系统的研制

Injection-locking method is applied to X band low-phase noise and small-spur opto-electronic oscillator (OEO) in this paper. Based on the quasi-linear theory, a new analytical model is built, and the effect of injection power on the single side band (SSB) phase noise and spurs of OEO is also analyzed. Results suggest that only moderate injection power can make sure both of the low phase noise and small spurs. In order to measure super-low phase noise of oscillators, the cross-correlation measurement system based on the fiber delay line is built, where high linear photodetector and low-phase noise amplifier are used to improve systematic sensitivity. low-phase noise OEO (-125 dBc/Hz@1 kHz、-145 dBc/Hz@10 kHz) and high-sensitivity phase noise measurement system (-130 dBc/Hz@1 kHz、-168 dBc/Hz@10 kHz) in X-band is finished. Those high-level index has not been reported in China and is on the level with the best index reported in foreign literature.

서브-1V 직렬공진 바렉터 통합형 평형 공통 게이트와 공통 드레인 콜피츠 전압제어 발진기의 탱크 발진전압에 대한 해석

본 연구는 1 V 미만 전원 전압에서 동작 가능한 직렬공진 바렉터 통합형 평형 공통 게이트 콜피츠 전압제어 발진기와 직렬공진 바렉터 통합형 평형 공통 드레인 콜피츠 전압제어 발진기의 탱크회로에서 나타나는 발진전압에 대한 해석적 연구를 수행하고 이를 시뮬레이션에 의해 확인한다. 해석적 연구의 결과는 직렬공진 바렉터 통합형 평형 공통 게이트 콜피츠 전압제어 발진기가 직렬공진 바렉터 통합형 평형 공통 드레인 콜피츠 전압제어 발진기보다 더 큰 발진전압을 탱크회로에 유도할 수 있으며 따라서 저 위상 잡음 발진에 보다 더 적합한 발진기임을 밝혀준다. This study performs the analytical investigation of the oscillation voltages at the tanks of the series tuned varactor incorporating balanced common-drain, and common-gate Colpitts VCO which are able to work even at the sub-1V power supply voltages. The results the investigation predicts is verified by the simulation on the circuit behaviors of the two VCOs. The analytical investigation finds that the series tuned varactor incorporating balanced common-gate VCO generates greater oscillation voltage at the tank than the series tuned varactor incorporating balanced common-drain VCO does, which in turn is more suitable for generating the low phase noise oscillation signal from the sub-1V supply voltage than the series tuned varactor incorporating balanced common-drain VCO.

Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit

This letter presents guidelines for the design of low phase noise oscillators in GaN high electron mobility transistor (HEMT) technology. The design starts from bias-dependent low-frequency (LF) noise measurements. Oscillator topology and bias point are then chosen for operation in regions where LF noise is low. The best LF noise properties are obtained for low drain voltage and current. Thus, the low phase noise can be achieved at low dc power which also means that power normalized phase noise figure of merit (FOM) will be good.

Ultralow-phase-noise oscillators based on BAW resonators

This paper presents two 2.1-GHz low-phase noise oscillators based on BAW resonators. Both a single-ended common base structure and a differential Colpitts structure have been implemented in a 0.25-μm BiCMOS process. The detailed design methods including the realization, optimization, and test are reported. The differential Colpitts structure exhibits a phase noise 6.5 dB lower than the single-ended structure because of its good performance of power noise immunity. Comparison between the two structures is also carried out. The differential Colpitts structure shows a phase noise level of -87 dBc/Hz at 1-kHz offset frequency and a phase noise floor of -162 dBc/Hz, with an output power close to -6.5 dBm and a core consumption of 21.6 mW. Furthermore, with the proposed optimization methods, both proposed devices have achieved promising phase noise performance compared with state-of-the-art oscillators described in the literature. Finally, we briefly present the application of the proposed BAW oscillator to a micro-atomic clock.

메타구조 기반의 DSRR 구조 공진기를 이용한 Ku 대역 저 위상잡음 발진기

본 논문에서는 메타구조기반의 double split ring resonator (DSRR) 구조의 공진기를 이용한 Ku대역에서 낮은 위상 잡음 특성을 갖는 발진기를 제안하였다. 제안한 공진기는 대역저지 특성을 가지며 14.67 GHz에서 S11은 ?0.25 dB, S21은 ? 44.59 dB를 나타내었다. 제안한 메타구조 기반의 공진기를 이용하여 설계한 발진기의 낮은 위상잡음 특성을 확인하였다. 제안한 메타구조 기반의 공진기를 적용한 발진기는 14.67 GHz에서 1차 발진이 일어나고, 100 kHz offset에서 ?130.63 dBc의 낮은 위상잡음 특성과 출력전력 2.03 dBm, -36.04 dBc의 고조파 특성을 나타내었다.

A Low Phase Noise Oscillator Principled on Transformer-Coupled Hard Limiting

Reduced phase noise conversion in a monolithic oscillator suitable for basestation applications is realized by hard limiting and subsequently restoring the resonating waveform. Overdriven transistors hard limit the drain voltage swing and it is shown analytically that this desensitizes the oscillation phase to circuit noise. A pair of tuned, 1:2 step-up transformers in the feedback path restore the fundamental frequency component with sufficient gain to overdrive the transistors forming the oscillator core, with greater selectivity than an equivalent LC tank. The 8 GHz, 65 nm CMOS oscillator prototype targeting the GSM-900 base-station specification consumes 32 mA from 1.5 V. Normalized to 915 MHz, the phase noise measured at 1 MHz offset is -147.7 dBc/Hz, validating predictions from theory and simulation. The measured frequency pushing is less than 16 MHz/V.

Low‐phase noise oscillator utilising high‐Qactive resonator based on substrate integrated waveguide technique

An X-band low-phase noise planar oscillator employing the substrate integrated waveguide (SIW) active resonator is demonstrated. By compensating the losses in the SIW cavity with an active feedback loop, the Q-factor of the SIW active resonator is greatly improved. The measured results show a loaded Q-factor of 1569 and unloaded Q-factor of 8782, which is very high among other planar resonators. A simplified generalised phase noise condition and its optimisation approach are proposed for the low-phase noise oscillator design. To validate the proposed optimisation approach, experimental prototypes of oscillators using different design parameters and resonators are fabricated. The measured results show that the optimised SIW active resonator oscillator possesses low-phase noise of −109.2 dBc/Hz at 100 kHz at X-band, which is 17 and 9 dB better than the microstrip resonator oscillator and SIW passive resonator oscillator, and is comparable with the dielectric resonator oscillator measured in this study.

유전체 공진기의 직접결합에 의한 K-Band 저위상잡음 발진기 설계

유전체 공진기의 직접결합에 의한 K-Band 저위상잡음 발진기 설계

Design of Low Phase-Noise Oscillator Based on a Hairpin-Shaped Resonator Using Composite Right/Left-Handed Transmission Line

In this letter, a low phase-noise microwave oscillator based on a hairpin-shaped resonator (HSR) using a composite right/left-handed transmission line (CRLH TL) is proposed. The proposed HSR consists of the conventional transmission line (CTL) and the CRLH TL. In order to obtain the high- Q factor, an electric field is concentrated on the CRLH TL, and then the CRLH TL provides a low loss due to a slow wave effect. The proposed HSR has a very compact size of 0.105 λg ×0.19 λg. An oscillator based on the HSR was designed, fabricated and measured. At the oscillation frequency of 4.95 GHz, the measured phase noise is -120.5 dBc/Hz at 100 kHz offset with 4.93 dBm output power.

평면형 구조의 분리형 링 공진기를 이용한 전압제어 발진기 구현

평면형 마이크로스트립 공진기를 이용한 고주파 발진기의 단점인 위상잡음 특성을 개선하기 위해 본 논문에서는 분리형 링 공진기를 제안하였다. 제안된 공진기를 이용하여 위상잡음 특성 개선 효과를 나타내기 위해 발진기를 설계하여, 5.8GHz 기본 주파수에서 7.22dBm의 출력과 -83.5 dBc@100kHz의 위상잡음 특성을 나타내었다. 이것은 <TEX>${\lambda}/4$</TEX> 마이크로스트립 공진기를 이용한 발진기와 비교하여 위상잡음 특성이 9.7dB 정도 개선되었다. 다음은 제안된 공진기에 버랙터다이오드를 추가하여 전압제어발진기를 구현하였다. 발진기의 특성은 최소 5.833 GHz에서 최대 5.845 GHz 까지 125 MHz 정도의 튜닝범위를 가지고, -118~-115.5 dBc/Hz@100 KHz의 위상잡음 특성을 갖는다. 본 논문의 발진기는 평면형 구조로 쉬운 작업공정과 소형화 특성 때문에 MIC 또는 MMIC 분야의 설계에 응용될 수 있을 것이다. In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator. Oscillator using proposed split ring resonator is designed, it has improved phase noise characteristics. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general <TEX>${\lambda}/4$</TEX> microstrip resonator. Next, we designed voltage controlled oscillator using proposed split ring resonator with varactor diode. The VCO has 125MHz tuning range from 5.833GHz to 5.845GHz, and phase noise characteristic is -118~-115.5 dBc/Hz@100KHz. Due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

Photo-Detectors Integrated with Resonant Tunneling Diodes

We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR) region. The resonant tunneling diode photo-detector (RTD-PD) can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD's NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz) modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

Dielectric Resonators With High $Q$-Factor for Tunable Low Phase Noise Oscillators

This paper demonstrates the realization of tunable microwave low phase noise oscillators. A ceramic-based dielectric resonator enclosed in a metallic cavity with an unloaded <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Q</i> of 13000 is proposed. The relationship between geometric parameters and resonant frequency is determined. The dielectric puck is then incorporated into multilayer printed circuit boards by using substrate-integrated waveguide techniques. The results show that the resonator resonates at TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">01δ</sub> mode with a frequency of 13.3 GHz. Therefore, 13.3 GHz dielectric resonator oscillators with both mechanic and electronic tuning are built. The oscillator includes a pseudomorphic high-electron-mobility transistor low-noise amplifier and an electronic phase shifter. The measured phase noise of the oscillator is -121.7 dBc/Hz at a 10-kHz offset. The calculated and measured phase noise results show a difference of 3 dB.

Low phase noise oscillator using a new planar hairpin resonator for X-band applications

This article proposed a new high loaded quality factor (QL) hairpin resonator with a combination of a stepped impedance resonator and single split ring resonator and its application to low phase noise oscillator for X-band applications.A new resonator has a good characteristic of S-parameter responses. The microwave oscillator is designed at 10 GHz that exhibited a low phase noise characteristic due to the high loaded QL of the new resonator. A series feedback network is used to generate the negative resistance to make oscillation. Experimental results of the microwave oscillator show the phase noise characteristic of −103.69 dBc/Hz at 100 kHz offset with output power of 15.56 dBm. The second harmonic suppression is −32.25 dBc, which is very important in wireless communication system. The figure of merit of the fabricated oscillator is −180 dBc/Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1508–1511, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27608

Miniaturisation and high quality factor of spiral meander spurline resonator for microwave oscillator

The spiral meander spurline structure is an optimal solution for a reduced resonator size and a high Quality factor (Q-factor) compared to other conventional spurline structures. The spiral meander spurline resonator shows not only 38% reduced dimensional effect, but also 16% improved Q-factor compared with conventional meander spurline resonator. Moreover, in order to get more high quality factor, we analysed spurline slot width variation and designed the symmetric dual spiral meander structure, which has a 46.87% improved Q-factor compare with a single spiral meander. The symmetric dual spiral meander structure resonator performance results are shown in a return loss of −0.76 dB, an insertion loss of −46.32 dB, and a quality factor of 235 at 6.4 GHz C-band application. In addition, according to the design and performance of the resonator, we can derive from this performance a low phase noise oscillator. The oscillators using symmetric dual spiral meander structure resonator shows good phase noise performances of −104.43 dBc/Hz at a 100 kHz offset from the carrier frequencies of 6.38 GHz at output powers of 12.2 dBm, respectively.

마이크로스트립 분리형 링 공진기를 이용한 RF 발진기 구현

In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed split ring resonator. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general /4 microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of split ring resonator, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed split ring resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

링형 DGS 공진기를 이용한 전압제어 발진기의 설계 및 구현

In this paper, a novel resonator using ring type DGS is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8 GHz band is designed using proposed DGS resonator. The ring type DGS resonator is composed of DGS cell etched on ground plane under 50  microstrip line. At the fundamental frequency of 5.8 GHz, 7.6 dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with ring type DGS resonator. We designed the voltage controlled oscillator using proposed the DGS resonator with varactor diodes placed between gaps of DGS. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

Analysis and Design of Low Phase-Noise Oscillators With Nonlinear Resonators

It is known that the dynamics and phase noise of resonator-based self-sustained nonlinear oscillators is affected by the presence of a nonlinear resonator. In fact, it has been shown that resonator nonlinearity can enhance the oscillator phase noise under certain conditions. This paper offers a new formulation and analytical approach to describe the effect of resonator nonlinearity on the phase noise of self-sustained oscillators. The analysis applies properties of stochastic Ito integrals to oscillator's averaged stochastic nonlinear differential equations with periodic steady state solutions. The results offer insight into designing low phase-noise oscillators with nonlinear resonators. We show that for a given nonlinear oscillator topology, there is an optimum power incident on the resonator that minimizes the phase noise. As a proof of concept, the analysis is applied to a 1.5-GHz CMOS oscillator that uses a nonlinear film bulk acoustic resonator (FBAR). A nonlinear model including memory effects for the FBAR is proposed and used in the formulation. At the optimum design point, the oscillator shows measured phase noise of -110 dBc/Hz at 1 kHz, -125 dBc/Hz at 10 kHz, -145 dBc/Hz at 100 kHz, and -160 dBc/Hz at 10-MHz offset frequencies while consuming 40 mW of dc power. This results in 10 fs of timing jitter.

Design of Low Phase-Noise Oscillators and Wideband VCOs in InGaP HBT Technology

A method for design of low phase-noise balanced-Colpitts (BC) fixed-frequency oscillators (FFOs) and wideband voltage-controlled oscillators (VCOs) is presented. Analytical expressions describe how to design an oscillator for best phase noise, given a limited Q factor and a certain active device. The theory needs only two free parameters: the impedance level (Zc) and tapping ratio (n) of the resonator. It is described how to chose ZC and n for low phase noise and large tuning range, respectively. The design method is verified with a low phase-noise FFO and a wideband VCO, both designed in InGaP HBT technology. The BC FFO presents a phase noise of 112 dBc/Hz at 100-kHz offset from a 9.2-GHz carrier. The wideband VCO implemented in the same technology presents a minimum phase noise of 106 dBc/Hz at 100-kHz offset from a 9-GHz carrier. Over the frequency range of 8.4-9.7 GHz, the phase noise is better than 102 dBc/Hz and the output power is 7 0.5 dBm. The wide tuning range, constant output power, and relatively constant and low phase noise are achieved due to double pairs of tuning varactors, one between emitters and one between collectors. To the authors' best knowledge, this type of double-tuned BC VCO topology has not been previously published.