Light-emitting Diode Chip Research Articles

Efficient Near‐Infrared Luminescence in Lanthanide‐Doped Vacancy‐Ordered Double Perovskite Cs2ZrCl6 Phosphors via Te4+ Sensitization

All-inorganic lead-free perovskite-derivative metal halides have shown great promise in optoelectronics, however, it remains challenging to realize efficient near-infrared (NIR) luminescence in these materials. Herein, we report a novel strategy based on Te4+ /Ln3+ (Ln=Er, Nd, and Yb) co-doping to achieve efficient NIR luminescence in vacancy-ordered double perovskite Cs2 ZrCl6 phosphors, which are excitable by a low-cost near-ultraviolet light-emitting diode (LED) chip. Through sensitization by the spin-orbital allowed 1 S0 →3 P1 transition of Te4+ , intense and multi-wavelength NIR luminescence originating from the 4f→4f transitions of Er3+ , Nd3+ , and Yb3+ was acquired, with a quantum yield of 6.1 % for the Er3+ emission. These findings provide a general approach to achieve efficient NIR emission in lead-free metal halides through ns2 -metal and lanthanide ion co-doping, thereby opening up a new avenue for exploring NIR-emitting perovskite derivatives towards versatile applications such as NIR-LEDs and bioimaging.

Highly Efficient Broad-Band Green-Emitting Cerium(III)-Activated Garnet Phosphor Allows the Fabrication of Blue-Chip-Based Warm-White LED Device with a Superior Color Rendering Index.

High-performance warm-white light-emitting diode (LED) devices are in great demand toward green and comfortable solid-state lighting. Herein, we report a creative green-emission CaY2HfGa(AlO4)3:Ce3+ phosphor. CaY2HfGa(AlO4)3:Ce3+ compounds with different cerium ion doping contents have been successfully prepared through a conventional high-temperature solid-state method, and their phase and crystal structure have been revealed via the powder X-ray diffraction and Rietveld refinement. Impressively, the CaY2HfGa(AlO4)3:Ce3+ phosphors exhibit a broad-band excitation, which well covers the wavelength region from the 300 to 500 nm, corresponding to the commercial blue-emitting LED chip. Upon 450 nm excitation, the optimal CaY2HfGa(AlO4)3:2%Ce3+ sample shows an intense broad-band green emission (the corresponding testing spectral range: 460-750 nm) with a strongest peak about 534 nm. In addition, the CaY2HfGa(AlO4)3:2%Ce3+ sample possesses a broad full width at half-maximum equal to 120 nm; moreover, its CIE chromaticity coordinate and the internal quantum efficiency are determined to be (0.3541, 0.5427) and 72.8%, respectively. A high-quality warm-white LED has been fabricated through incorporating our CaY2HfGa(AlO4)3:2%Ce3+ green phosphors and commercial red phosphors with the 450 nm blue LED chip. When upon the 20 mA bias driving current, the LED device demonstrates a bright warm-white light emission, which possesses a satisfactory color rendering index of 91, a low correlated color temperature of 4080 K, as well as a good luminous efficacy of 85.14 lm W-1. The creative green-emitting CaY2HfGa(AlO4)3:Ce3+ garnet phosphor has a bright application prospect toward high-quality warm-white LED lighting.

Zero‐Dimensional Organic Copper(I) Iodide Hybrid with High Anti‐Water Stability for Blue‐Light‐Excitable Solid‐State Lighting

AbstractThe discovery of rare‐earth free luminescent materials with blue‐light‐excitable characteristic is of great importance for solid‐sate lighting applications. Herein, a Cu(I)‐based 0D luminescent hybrid (1,3‐dppH2)2Cu4I8∙H2O is synthesized by a facile solution method, and it shows the orange‐red emission peaking at 625 nm upon 460 nm excitation. The structure‐related luminescence mechanism has been elaborated by experimental and theoretical investigations. Moreover, the emission intensity remains unchanged even after continuous water treatment for 60 days due to the improved structural stability originating from intermolecular π–π interaction between organic cations. A warm white light‐emitting diode (LED) device with the color rendering index of 91.4% has been fabricated by combining the 440 nm LED chip, green‐emitting Lu3Al5O12:Ce3+, and (1,3‐dppH2)2Cu4I8∙H2O. This work provides a new design route towards 0D cuprous halide materials and will initiate more exploration of their intrinsic luminescence mechanism.

A novel blue-light excitable Pr3+ doped (Sr,Ba)LaMgTaO6 phosphor for plant growth lighting

In this work, a series of Pr3+ ions doped (Sr,Ba)LaMgTaO6 phosphors were prepared and applied for plant growth lighting. Under 450 nm excitation, (Sr,Ba)LaMgTaO6:Pr3+ exhibits intense reddish emission at around 650 nm which is assigned to the 3P0→3F2 transition of Pr3+ ions. The luminescence intensity reaches to the maximum at 2.5 mol% Pr3+ doping content both in SrLaMgTaO6:Pr3+ and BaLaMgTaO6:Pr3+ systems. Meanwhile, the internal quantum efficiency (IQE) test shows that the IQE of the SrLaMgTaO6:0.025Pr3+ phosphor is 33.34% upon blue light excitation. The decay curves and temperature-dependent luminescence measurements of the (Sr,Ba)LaMgTaO6:Pr3+ phosphors were performed and investigated in detail. The red light emitting diodes (LEDs) were packaged using the SrLaMgTaO6:Pr3+ and BaLaMgTaO6:Pr3+ phosphors combined with a blue LED chip, which are well-overlapped with the absorption band of photosynthesis. Results indicate that the (Sr,Ba)LaMgTaO6:Pr3+ can serve as a component of the red light in plant-growth LEDs.

Liberation and Separation of Valuable Components from LED Modules: Presentation of Two Innovative Approaches

The rapid development of light-emitting-diode (LED) technology is attributed to its superiority over light sources of earlier generations. Although LED lamps, compared to compact fluorescent lamps, are considered less harmful to the environment, there is still no efficient solution to deal with them at the end of their lifecycle. The first part of the study provides a detailed characterisation of LED lamps, focusing on their most interesting component: the LED module. LED packages attached to the module are highly enriched with Ga, In, Pd, Ag, Au, Sr, Y, Ce, Eu, Gd, and Lu, with the content of each element varying greatly depending on the LED technology. In the second part of this research, two new approaches for liberation and concentration of valuable components from LED modules are presented and compared: a chemical route and a thermal route. The chemical treatment leads to a highly selective separation of LED chips and encapsulation. Enrichment factors up to about 125 are achieved, and a concentrate is obtained containing approximately 14 wt% of the aforementioned valuable components. However, the process requires aromatic solvents, which are viewed as toxic. The thermal treatment results in separation of the aluminium heat sink from all other components of the LED module. Enrichment is approximately ten times lower, but the approach is technically feasible.

Selective separation of plastic LED lamp components using electrodynamic fragmentation for material recovery

The recycling of light-emitting diode (LED) lamps and tubes is becoming increasingly important due to their growing market share as energy-efficient lighting technology. Here we report on the use of high voltage electric-pulse fragmentation to recover elementary components such as LED chips and printed circuit boards (drivers). E27 LED lamps with plastic bulbs, which represent 48% of deposits collected by a French company, are used as a case study. More than 150 lamps were tested on a laboratory reactor for electrodynamic fragmentation. The technological process in which highly energetic electrical pulses were applied to materials immersed in water was studied in order to separate the components of the LED lamps using a minimal specific energy. The estimated energy necessary to achieve total separation assessed at 64%, without grinding pretreatment, was 5.2 ± 0.6 kWh per ton, representing a mass recycling rate of 74%. Based on the disassembled material, the commercial value of the recovered materials was thus estimated. Gold, as the most representative material, was found to represent 0.03% of the mass fraction for 83.6% of the total commercial value. The process disassembling capacity is a key issue to increase the recycling rate of current LED lamps and tubes.

A strong zero phonon line of Mn4+ in a red-emitting phosphor BaGaF5:Mn4+

In this paper, a single-phase red-emitting phosphor BaGaF5:Mn4+ (BGFM) was synthesized by a hydrothermal method, and its crystal structure and luminescence properties were studied in detail. The results show that the excitation spectra of BGFM samples are mainly composed of two bands located at the near-ultraviolet and blue light region, respectively, while the emission spectra show multiple peaks in the red region. Due to the defects generated with the non-equivalent occupation of Ga3+ by Mn4+, the adjacent [MnF6] octahedron is highly distorted, resulting in a strong zero-phonon line (ZPL, 627 nm) in the emission spectrum. Additionally, the materials have shown a high internal quantum efficiency (QE = 63.7%) and good color stability. Finally, a white LED was obtained by mixing BGFM and commercial Y3Al5O12:Ce3+ yellow phosphor on a blue light-emitting diode (LED) chip.

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

The brightness enhancement of the light emitting diode (LED) can satisfy the increasing demands of illumination of human beings. However, the low-rate recombination of electron-hole pairs, isotropic nature of the spontaneous emission as well as the large refractive index of the materials used for LEDs usually limits the performance of the light output. Therefore, it is necessary to address these challenges, trying to enlarge the light output power with high optoelectronic efficiency. This review will analysis the factors that can influence the behaviour of the LEDs and the method to overcome these issues by optimizing the structures of epilayers and LED chips.

A near-infrared phosphor doped with Cr3+ towards zero-thermal-quenching for high-power LEDs

Cr3+-doped phosphors show significant application potential in near-infrared (NIR) light-emitting diodes (LEDs). However, the development of thermally stable and efficient NIR phosphors still faces enormous challenges. Herein, NIR phosphors K2NaMF6:Cr3+ (M3+ = Al3+, Ga3+, and In3+) were synthesized by the hydrothermal method. The represented K2NaAlF6:Cr3+ phosphor can be effectively excited by blue light (∼430 nm) to present broadband emission at half a maximum of 96 nm peaking at ∼ 728 nm. Meanwhile, the K2NaAlF6:Cr3+ phosphor exhibits excellent internal quantum efficiency (IQE = 68.08%) and nearly zero-thermal-quenching behavior, which is able to maintain 96.5% emission intensity at 150 °C of the initial value at 25 °C. The NIR phosphor-converted LED was fabricated based on K2NaAlF6:Cr3+ phosphor and a blue LED chip, showing a NIR output power of 394.39 mW at 300 mA with a high photoelectric conversion efficiency of 10.9% at 20 mA. Using the high-power NIR LED as a lighting source, transparent and quick veins imaging as well as non-destructive testing were demonstrated, suggesting the NIR phosphor has a wide range of practical applications.

Pro-environment Cu2O facilitate stable low-wastage ultraviolet p-CuxO/n-GaN LEDs with virtual electron blocking nanolayer

Light-emitting diodes (LEDs), which convert electricity to light, are widely used in modern society. Herein single-phase Cu2O and mixed-phase CuxO (x = 1, 4/3, 2) films are fabricated on n-GaN to construct p-Cu2O/n-GaN and p-CuxO/n-GaN LEDs, respectively. The application of Cu2O in LEDs is achieved for the first time. Discovering that the p-Cu2O/n-GaN diode hovers a rectification ratio at 95 and a near-ideal leakage current (2.0 × 10-11 A). The near band edge (NBE) emission is located at 372 nm, and the energy proportion of ultraviolet radiation (EPUV, <400 nm) rapidly and steadily stays at 80 % above 3 mW. Under the same injection power (35 mW), the luminous intensity of p-Cu2O/n-GaN is nearly 90 times than that of p-CuxO/n-GaN. Surprisingly marvelous that the energy band structure of Cu2O is equivalent to a virtual electron blocking layer (EBL) in GaN-based LEDs to optimize UV emission performance. Finally, uncased LED chips suffered high temperatures and the constant current aging process. The p-Cu2O/n-GaN LED exhibits a satisfying thermal stability with the optimum working temperature at 70 ∼ 100 °C. The luminous intensity decays 25.1 % after operating at room temperature (RT) for 3600 s, less than half of the p-CuxO/n-GaN LED, further reveal an exceptional practical application potential.

Corrugated 1D Hybrid Metal Halide [C6H7ClN]CdCl3 Exhibiting Broadband White-Light Emission.

Organic-inorganic hybrid metal halides (OIMHs) exhibiting white-light emission are a splendid class of emitters and are regarded as desired phosphors for solid-state lighting applications. Here we report a single-component white-light-emitting hybrid metal halide, namely, [C6H7ClN]CdCl3 (C6H7ClN = 4-(chloromethyl)pyridinium), which features a corrugated 1D anionic double chain composed of edge-shared CdCl6 octahedrons and exhibits broadband white-light emission with a photoluminescence quantum yield of 12.3% under 365 nm UV light irradiation. Density functional theory calculations and temperature-dependent emission spectral analysis unveil that the broadband emission of [C6H7ClN]CdCl3 is ascribed to self-trapped excitons. Moreover, a single-component white-light-emitting diode device with a correlated color temperature of 5214 K and color rendering index of 83.7 can be fabricated via coating [C6H7ClN]CdCl3 on a 365 nm UV light-emitting diode chip. Such a promising luminescent material provides guidance for the design and synthesis of OIMHs with unique structures and desired properties.

Luminescence properties and thermal stability of Dy3+/Eu3+co-doped single-component BaZn2(PO4)2 glass-ceramic phosphors

Highly thermally stable BaZn2(PO4)2: Dy3+/Eu3+ glass-ceramic (GC) phosphors were synthesized using a high-temperature solid-state reaction and controlled-temperature pre-crystallization method. It is found that Dy3+-doped BaZn2(PO4)2 GC phosphors produce cold white light emission at 484 nm and 575 nm under 350 nm excitation with the optimal Dy3+ doping concentration of 0.25 mol%. The theoretical analysis indicates that the dipole-dipole interaction might be the origin of the concentration quenching mechanism of phosphor. The Eu3+-doped BaZn2(PO4)2 GC phosphors produce orange-red emission at 592, 616, 654 and 700 nm under 395 nm excitation. More than that, tunable white light emission can be achieved by optimize the co-doped concentration of Eu3+ on BaZn2(PO4)2: 0.25Dy3+ GC phosphor. The emission spectral intensity and luminescence decay curves from BaZn2(PO4)2: 0.25Dy3+/yEu3+ (range of y) GC phosphors show the energy transfer from Dy3+ to Eu3+ and the emission color can be tuned from cool white to warm white region with the color correlated temperatures (CCTs) reduction from 7299 K to 2520 K. The typical BaZn2(PO4)2: 0.25Dy3+/1Eu3+ GC phosphors have a high thermal stability with an activation energy of 0.30641 eV. Finally, the white LED devices were fabricated by coupling a 363 nm UV light-emitting diode chip with the BaZn2(PO4)2: 0.25Dy3+/yEu3+ GC phosphors. These results suggest that BaZn2(PO4)2: Dy3+/Eu3+ GC phosphors may be suitable candidates for single-component white light-emitting phosphors for application in UV-WLEDs.

Novel deep‐red‐emitting double‐perovskite type Ca2ScNbO6:Mn4+ phosphor: Structure, spectral study, and improvement by NaF flux

AbstractA novel deep‐red‐emitting phosphor Ca2ScNbO6:Mn4+ is prepared via a high‐temperature solid‐state reaction and its luminescent properties are systematically investigated. The results show that Mn4+‐activated Ca2ScNbO6 phosphors have broad absorption in ultraviolet region, and show bright deep‐red emission at 692 nm. The optimal doping concentration, crystal‐field strength, internal quantum efficiency, and mechanism of concentration and thermal quenching effects are discussed in detail. Moreover, NaF flux is screened out to improve both luminescent intensity and morphology of the phosphor. Finally, a red light‐emitting diode (LED) lamp is fabricated with as‐prepared Ca2ScNbO6:Mn4+ phosphors and a 365 nm LED chip. The electroluminescence spectra show a good overlapping with phytochrome PR and PFR absorbance. The results provided the as‐synthesized Ca2ScNbO6:Mn4+ phosphors a great potential in plant growth lighting.

The high thermal stability of white emitting phosphor Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ ,La3+ /Lu3+ for white light emitting diodes.

A series of Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ was prepared using a solid-state method, and the phosphor emitted white light by tuning the ratio of Dy3+ /Eu3+ . The effects of La3+ /Lu3+ on the structure and luminescence properties of Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ were explored. Under the influence of bond length and twist, the luminescence intensity of the materials increased first and then decreased under excitation with ultraviolet light. The lattice distortion of the trivalent cation La3+ -substituted Mg2 Y2 Al2 Si2 O12 :Dy3+ and Eu3+ phosphors was reduced, the symmetry of polyhedron occupied by the luminescence centre improved, and the thermal stability of the luminescence centre improved to a certain extent. White light emitting diodes (LEDs) were fabricated by combining a 370 nm LED chip and the Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ ,La3+ (Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ ,Lu3+ ) phosphor. The results showed that Mg2 Y2 Al2 Si2 O12 :Dy3+ ,Eu3+ ,La3+ /Lu3+ may have potential application in the area of white LEDs.

Defect Detection on LED Chips Based on Position Pre-Estimation and Feature Enhancement

Light-emitting diode (LED) chips have disordered arrangement and defects with characteristics of low contrast, for which traditional segmentation methods cannot classify surface defects effectively. In this paper, a chip segmentation method based on position pre-estimation and a modified Normalized Correlation Coefficient (NCC) matching algorithm, as well as feature enhancement methods are proposed. The position pre-estimation method is used to avoid the interference introduced by the disordered chip arrangement and the large missing area. By modifying the NCC algorithm, matching speed is improved by eight times compared to traditional NCC while matching result is not affected by brightness change. Furthermore, feature enhancement schemes with higher speed and accuracy were designed to identify low-contrast defects. The experimental results showed that the average accuracy reached 99.54%, improved by 0.66% compared to the state-of-the-art method while the inspection missing rate was 0.03%. In addition, the detection time of a single chip was approximately 1.098 ms, which meets the requirements of online detection, and the smallest defect that could be detected was 2 µm. In summary, the methods proposed in this study meet the requirements of industrial online detection regardless of accuracy, efficiency, or extensibility.

Full-Spectrum White Light-Emitting Diodes Enabled by an Efficient Broadband Green-Emitting CaY2ZrScAl3O12:Ce3+ Garnet Phosphor.

Phosphor-containing white light-emitting diodes (LEDs) with low color-correlated temperatures (CCTs) and high color rendering indexes (CRIs) are highly desirable for energy-efficient and environmentally friendly solid-state light sources. Here, we report a new and efficient blue light-excited, green-emitting Ce3+-activated CaY2ZrScAl3O12 phosphor, which underpins the fabrication of high-color quality and full-visible-spectrum warm-white LED devices with ultrahigh CRI values (Ra > 96 and R9 > 96). A family of CaY2ZrScAl3O12:Ce3+ phosphors with different Ce3+ dopant concentrations were prepared by high-temperature solid-state synthesis. X-ray diffraction and corresponding Rietveld refinement reveal a garnet structure with an Ia3̅d space group and crystallographic parameters a = b = c = 12.39645(8) Å, α = β = γ = 90°, and V = 1904.99(4) Å3. Luminescence properties were studied in detail as a function of Ce3+ with the optimal concentration 1% mol. Impressively, CaY2ZrScAl3O12:1%Ce3+ exhibits a broad excitation band from 370 to 500 nm, peaking at ∼421 nm, which is well matched with emission from commercial blue LED chips. Under 421 nm excitation, the CaY2ZrScAl3O12:1%Ce3+ phosphor produces dazzling green light in a wide emission band from 435 to 750 nm (emission peak: 514 nm; full width at half-maximum: 113 nm), with a high internal quantum efficiency of 63.1% and good resistance to thermal quenching (activation energy of 0.28 eV). A white LED device combining a 450 nm blue LED chip with CaY2ZrScAl3O12:1%Ce3+ green phosphor and commercial CaAlSiN3:Eu2+ red phosphor as color converters demonstrates bright warm-white light with excellent CIE color coordinates of (0.3938, 0.3819), low CCT of 3696 K, high CRI (Ra = 96.9, R9 = 98.2), and high luminous efficacy of 45.04 lm W-1 under a 20 mA driving current. New green phosphors enable the design and implementation of efficient luminescent materials for healthy solid-state lighting.

Obtain full visible spectrum light-emitting diode illumination via bismuth-activated cyan phosphors

Developing highly efficient cyan-emitting fluorescent materials is essential to bridge the cyan gap in phosphor-converted white light-emitting diodes for full-spectrum white illumination. Here, a Bi-doped cyan phosphor has been reported to solve this gap. The phase purity, photoluminescence emission/excitation spectra, concentration quenching, lifetime decay curves, and temperature-dependent photoluminescence emission spectra were systematically investigated. SrLaGaO4:Bi3+ exhibits a broad excitation band (250–400 nm), which matches with the emission of a commercial near-ultraviolet light-emitting diode chip. The cyan light peaked at 475 nm is observed, which is attributed to the 3P1→1S0 transition of Bi3+. The thermal quenching experiment was performed, and the activation energy was calculated as 0.36 eV. Finally, full-spectrum white light-emitting diode devices were fabricated using SrLaGaO4:Bi3+ phosphors, commercial blue BaMgAl10O17:Eu2+ phosphor, green (Ba, Sr)2SiO4:Eu2+ phosphor, and red CaAlSiN3:Eu2+ phosphor, which displayed an International Commission on an illumination coordinate of (0.3732, 0.3850), a correlated color temperature of 4290 K, and a color rendering index of 93.2 at a drive current of 20 mA. This result indicates that SrLaGaO4:Bi3+ plays an essential role in bridging the cyan gap, providing new inspiration for applying cyan-emitting phosphors in full-spectrum white lighting.

Direct van deer Waals epitaxy of multiband-emitting InGaN-based LEDs on graphene for phosphor-free white light illumination

The white light-emitting diodes (LEDs), a kind of representative multiband light emitters, which are generally manufactured by coating phosphor with InGaN-based blue LED chips, are widely used in illumination and display. However, the degradation and wavelength-conversion loss of phosphor are still issues which shorten the life of these LEDs. Herein, we demonstrate a convenient way to fabricate phosphor-free multiband-emitting LEDs without any external process or additional dielectric interlayers, utilizing only graphene as substrate for direct van deer Waals epitaxy (vdWE) of multiple-facet InGaN-based LEDs. Taking advantage of the low nucleation density of GaN on graphene, the surface morphology of the films was controlled as complete voids without flat. The morphology of InGaN/GaN multi quantum wells followed with the multiple-facet GaN, which caused the variation of indium concentration in different lattice plane of multi quantum well and led to multiband emission. Those findings reveal the roles of graphene in growth of III-nitride and provide valuable insights into the application of graphene for phosphor-free white light illumination.

THE INFLUENCE OF TEMPERATURE ON THE SPECTRAL CHARACTERISTICS OF LEDS WITH A LUMINESCENT COATING BASED ON PHOSPHATE-TUNGSTANE GLASS-CERAMICS

Nowadays, the light-emitting diode (LED) lamps are the most energy-efficient light-emitting devices, the emission spectrum of which can be adjusted in accordance with a specific practical task. One of the important characteristics is the stability of the emission intensity during the operation of such devices. An urgent task is the development of luminescent coatings for white LEDs based on glasses and glass ceramics, because, in comparison with polymers, they are more resistant to high temperatures and powerful light fluxes. The aim of the study was to determine the effect of temperature on the intensity and spectral composition of radiation of the combined system "UV LED + Fluorescent Glass Ceramics" (SD + LCS) and to compare the obtained data with temperature dependences of such characteristics for commercial white LEDs. In this work, the change in the intensity and spectrum of the light emission of the model combined system "UV LED + glass ceramics" when heated up to 105 ° C was studied. The results obtained were analyzed together with the dependences of the luminescence intensity on temperature for a commercial white LED. The emission spectra of the combined system contain both narrow luminescence peaks associated with transitions in europium ions and broad bands elated with the emission from the LED chip and the luminescence of the glass host. When heated, the position of the emission band of the chip is slightly shifted to the long-wavelength side, both for commercial LEDs and for model combined systems. It was also found that the temperature stability of model "white" light sources based on phosphate-tungstate glass ceramics is higher than the corresponding characteristic of commercial white LEDs in the temperature range of 50 - 105 ° C.

(INVITED)Narrow-band violet and blue emission of Bi3+ in M10P6O25 (M = Ca, Sr) based on highly symmetric crystal structure

Phosphor materials with narrow emission bands are highly interesting for light-emitting diode (LED) lighting and display applications. However, designing novel Bi3+-doped phosphors with desirable narrow band emission, high luminous efficiency and good thermal stability is a challenging task. Here, two novel violet- and blue-emitting narrow-band M10P6O25:Bi3+ (M = Ca, Sr) phosphors are designed based on the small Stokes shift and introduction of Bi3+ into highly symmetric lattice sites. Both phosphors exhibit a broad absorption band in 300–380 nm, matching well with the n-UV LED chip. Under UV light excitation, Ca10P6O25:Bi3+ shows a violet emission peaking at 392 nm with a narrow full width at half-maximum (FWHM) of 36 nm and high color purity of 98%. Sr10P6O25:Bi3+ emits a blue light (400–550 nm) with FWHM of 66 nm and color purity of 88%. More importantly, the as-prepared M10P6O25:Bi3+ (M = Ca, Sr) phosphors show good thermal stability (>82%@150 °C) and relatively high photoluminescence quantum yields (PLQY >50%). Moreover, violet LED fabricated with Ca10P6O25:Bi3+ can be used in anti-counterfeiting. The as-fabricated white LED utilizing Sr10P6O25:Bi3+ possesses a CIE chromaticity coordinates of (0.345, 0.363), color rendering index (CRI) of 87.5 and correlated color temperature (CCT) of 4992 K. The above investigations indicate that M10P6O25:Bi3+ (M = Ca, Sr) are promising violet and blue phosphor candidates for LED with wide-color-gamut display and potential anti-counterfeiting applications.