Lateral Metal Research Articles

Dual Basicity and Nucleophilicity of Organosodium Reagents in Benzylic C-H Additions of Toluenes to Diarylethenes and Ketones.

Profiting from the dual high basicity and nucleophilicity of organosodium complexes, here we report the stepwise lateral metalation of a wide range of alkyl arenes (MeAr), mediated by hydrocarbon-soluble NaCH2SiMe3 ⋅ PMDETA (PMDETA=N,N,N',N'',N''-pentamethyldiethylenetriamine), followed by nucleophilic addition to diarylethenes of the newly generated NaCH2Ar ⋅ PMDETA complexes. This method grants access to a range of functionalised hydrocarbons in excellent yields and can be upgraded to catalytic regimes when using trans-stilbene, a 10 mol% of the alkyl sodium base and toluene as a solvent. Extending this approach to aromatic ketones leads to the formation of stilbenes under mild reaction conditions, resulting from the deprotonative coupling of toluenes with ketones. Combining spectroscopic studies with the trapping and characterisation of key reaction intermediates, mechanistic insights have been gained, advancing the understanding of coordination effects in organosodium chemistry, and shedding light on their special reactivity profiles.

Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application

A rapid and effective strategy has been devised for the swift development of a Zn(II)-ion-based supramolecular metallohydrogel, termed Zn@PEH, using pentaethylenehexamine as a low molecular weight gelator. This process occurs in an aqueous medium at room temperature and atmospheric pressure. The mechanical strength of the synthesized Zn@PEH metallohydrogel has been assessed through rheological analysis, considering angular frequency and oscillator stress dependencies. Notably, the Zn@PEH metallohydrogel exhibits exceptional self-healing abilities and can bear substantial loads, which have been characterized through thixotropic analysis. Additionally, this metallohydrogel displays injectable properties. The structural arrangement resembling pebbles within the hierarchical network of the supramolecular Zn@PEH metallohydrogel has been explored using FESEM and TEM measurements. EDX elemental mapping has confirmed the primary chemical constituents of the metallohydrogel. The formation mechanism of the metallohydrogel has been analyzed via FT-IR spectroscopy. Furthermore, zinc(II) metallohydrogel (Zn@PEH)-based Schottky diode structure has been fabricated in a lateral metal–semiconductor-metal configuration and it’s charge transport behavior has also been studied. Notably, the zinc(II) metallohydrogel-based resistive random access memory (RRAM) device (Zn@PEH) demonstrates bipolar resistive switching behavior at room temperature. This RRAM device showcases remarkable switching endurance over 1000 consecutive cycles and a high ON/OFF ratio of approximately 270. Further, 2 × 2 crossbar array of the RRAM devices were designed to demonstrate OR and NOT logic circuit operations, which can be extended for performing higher order computing operations. These structures hold promise for applications in non-volatile memory design, neuromorphic and in-memory computing, flexible electronics, and optoelectronic devices due to their straightforward fabrication process, robust resistive switching behavior, and overall system stability.

Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques

In this article, a novel high-k and equivalent variable lateral doping 4H-SiC lateral double-diffused metal oxide semiconductor (LDMOS) field-effect transistor with improved performance is proposed and calibrated by numerical simulation. The three-dimensional equivalently P-top region is employed in the drift region, and only one additional ion implantation step is needed to achieve variable lateral doping (VLD) technique. The VLD technique combined with the high-k dielectric in the drift region, not only increases the doping concentration of N-drift region, but also optimizes the electric field distribution in the drift region. Simulation results indicates that the BV, specific on-resistance and the short-circuit withstand time of the proposed Hk VLD LDMOS are improved by 48.91%, 53.6% and 60.2% respectively, compared with those of the conventional LDMOS device.

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study

In this paper, a novel double-gate trench silicon-on-insulator lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with double-dielectric material (DGDK-LDMOS) is proposed. DGDK-LDMOS has two dielectric materials: a reverse-L-shaped high-k (HK) thin film and an low-k (LK) buried oxide layer. The HK thin film optimizes the electric field distribution on the drift region surface, attracting electric flux, and the excellent withstand voltage of the LK buried oxide layer can significantly improve the breakdown voltage (BV) and reduce specific on-resistance (R on,sp) of the device. The modulation mechanism of LDMOS by HK thin film and LK buried oxide layer is analyzed. The results show that compared with conventional LDMOS, when the permittivity of HK thin film is 25 and the permittivity of LK buried oxide is 3, the BV of DGDK-LDMOS is increased by 89.6%, the R on,sp is decreased by 26.4%, and the figure of merit (FOM, FOM = BV2/R on,sp) is increased by 397.2% from 3.6 MW cm−2 to 17.9 MW cm−2. Meanwhile, the output characteristics, transfer characteristics, lattice temperature, AC characteristics and switching characteristics of DGDK-LDMOS are also discussed and compared.

Reviewing The Effectiveness of Different Methods of Applying Post-Tensioned Metal Straps (PTMS) In Enhancing the Flexural Strength of Normal Concrete Beams After Strengthening

Concrete's strength and deformability can be enhanced by adding external lateral confinement. Several materials and confinement techniques have been investigated throughout the development of confined concrete, including Post-Tensioned Metal Straps (PTMS). This study compares three methods of using PTMS to strengthen normal Reinforced Concrete (R.C) beams in bending. First, the method of completely wrapping the beams longitudinally with metal straps is assessed. Secondly, the application of lateral metal straps is examined. Finally, the method of combining metal straps with steel channels is investigated. The assessment criteria included price, effort required for application, applicability of the method, strength enhancement, and ductility of the enhancement. It is concluded that wrapping the beam longitudinally with metal straps is the most cost-effective and easiest method. However, the use of metal straps with steel channels offers greater applicability, strength, and ductility, as it can be applied to any concrete beam. Finally, it is demonstrated that ANSYS can accurately model beams strengthened with metal straps, as evidenced by the good match between the failure modes of beams tested experimentally and analytically.

Dislocations/Defects analysis in III-V nitrides - a cost effective MOCVD epitaxy solution

In present paper an innovative technique to reproduce the epitaxial growth results through lateral flow metal organic chemical vapor deposition (MOCVD) reactor process at atomistic scale is reported. It includes the equivalent MOCVD reactor geometry architecture of AIXTRON 200/4 RF-S horizontal flow reactor. The gas- and surface phase chemical reaction kinetics and thermodynamics are given due consideration in the present study without use of any continuum or fluid dynamics models. The optimum conditions are extracted by running design of experiments over TNL-EpiGrow simulator to achieve high crystalline quality aluminum nitride (AlN) films over Si (111) substrate. The impact of variation in precursor NH3 flow rates and carrier gas N2 pressure are used to predict the conditions to optimize the improved morphology and quality of the AlN films. The defects densities are characterized in terms of vacancies and dislocation densities. The roughness and lattice parameters are extracted. The growth rates obtained in present studies are compared against reported the similar experiments. The excellent agreement is observed between experimental and simulated results. The dislocation densities in grown samples are also found in good agreement with the similar experimental reported densities in each sample.

Combining two relatively weak bases (Zn(TMP)2 and KOtBu) for the regioselective metalation of non-activated arenes and heteroarenes.

Co-operation between two relatively weak Brønsted bases, Zn(TMP)2 and KOtBu, produces a bimetallic base strong enough to regioselectively zincate non-activated arenes such as naphthalene, biphenylene and anthracene under mild conditions. This co-operativity is also effective with a range of more sensitive five-membered ring heterocyclic substrates including benzoxazole and caffeine. Metalation products have been intercepted with iodine, affording the relevant iodo-(hetero)arenes in good to excellent yields with finely tuned regioselective control. Combining NMR spectroscopic and X-ray crystallographic studies has uncovered that depending on the solvent, a complicated ligand distribution process of mixed aryl/alkoxy higher order zincate intermediates, (THF) n K2Zn(Ar)2(OtBu)2, that can liberate lower order zincates of the form [(THF)2KZn(Ar)(OtBu)2]2 and eliminate potassium aryl species. While this ligand redistribution process seems to operate for non-substituted (hetero)arene metalation products, for non-activated alkylarenes such as mesitylene or m-xylene the higher-order zincates resulting from their lateral metalation are stable in solution and the solid state, which is attributed to the greater π-stabilisation that these systems can provide to the K cations. Adding another layer of complexity to this heterobimetallic system, over time the Zn(TMP)2/2KOtBu combination reacts with the THF solvent of these reactions, to afford an unusual decomposition product which contains an s-trans-1,3-butadienyl (C4H5 -) fragment coordinated to Zn within a potassium zincate structure. The formation of the latter is attributed to the initial synergistic α-zincation of THF, followed by subsequent ring opening and oxygen extrusion.

Analysis of the Impact of Lateral Conduit and Metal Wire Mesh on Methane Explosions

To enhance the deflagration efficiency and protection level of combustible mixed gases in narrow spaces, a small square experimental pipeline system was designed. Experiments were conducted to investigate the effects of lateral vent pipes and metal wire meshes on the explosion characteristics of methane gas. This study examined the influence of changing the positions of the lateral vent pipes and metal wire meshes in the pipeline on the variation of parameters such as the flame shape, leading speed, and pressure of the methane/air premixed gas in the pipeline. The results indicated that the lateral vent pipes could effectively release part of the energy from the methane explosion, and the release effect was stronger the closer they were to the ignition end. This was significantly more effective in releasing the flame and pressure than when the vent pipes were placed in the middle or at the end of the pipeline. For lateral vent pipes close to the ignition source, their effective release of the not yet fully developed premixed flame allowed the heat absorption, wave absorption, and quenching performance of the installed metal wire mesh in the pipeline to fully exert their effects on the slow-spreading premixed flame. Furthermore, when a metal mesh was installed in the pipeline and the flame could not be extinguished, the flame penetrated the mesh structure, causing the flame front to become unstable and exhibit “irregular wrinkles”. That is, the flame front was no longer smooth, the wrinkles became more pronounced, and the degree of turbulence was enhanced.

Analysis of flatness and critical crown of hot-rolled strip based on thermal–mechanical coupled residual stress analytical model

Residual stress is introduced during hot-rolled strip production due to various factors, such as temperature distribution, crown change, and metal transverse flow. Excessive residual stress can cause flatness defects in the strip, while insufficient residual stress may result in deformation during subsequent cutting. To explore the mechanism of residual stress formation in hot-rolled strip and how to control it, an analytical model for the coupling of temperature, crown and residual stress is established. Firstly, based on the symplectic space Hamiltonian system, an analytical solution for the strip cross section temperature field in each inter-stand zone is obtained. Then the residual stress analytical model is derived based on the fiber rod model combined with the law of volume invariance, lateral metal flow function and high temperature stress relaxation phenomenon. Meanwhile, to verify the accuracy of the analytical model, a multi field coupled finite element model based on the measured data validation is established. The calculation results of the analytical model are in good agreement with the finite element model. Furthermore, the buckling model of strip in symplectic space Hamiltonian system is derived, and the critical buckling stress of different strip flatness defects is directly calculated. Finally, the residual stress analytical model is combined with critical buckling stress to calculate the critical exit crown ratio to keep the strip flat.

Temperature Reliability Investigation for a 400 W Solid-State Power Amplifier under High and Cold Conditions

In order to study the temperature reliability of high-power amplifiers under high cand cold conditions, a 400 W solid-state power amplifier was taken as an example to explore the variation in its performance. The test results showed that its output power, gain, and power-added efficiency increased with the increase in temperature at a fixed frequency. Under a fixed input power, Pout and gain both showed different trends with the rising temperature. Within the frequency band of 2–10 MHz, the higher the temperature, the better the output power and gain. However, within the frequency range of 10–30 MHz, the higher the temperature, the worse the performance. Moreover, with the increasing temperature, its power-added efficiency, the second harmonic and the third harmonic also showed a decreasing trend. Detailed analysis showed that the degradation and inversion of performance parameters are closely related to the zero temperature coefficient and self-heating effect of the lateral double-diffused metal–oxide–semiconductor field-effect transistor. Meanwhile, it is also affected by the circuit structure and thermal design of the PA. In order to ensure stable performance in different environments, performance degradation can be improved by hardware compensation. Therefore, analyzing the working parameters at different temperatures for high-power PAs is the key to achieving temperature control and ensuring their long-term stability and reliability. This can provide relatively accurate reference data for subsequent heat dissipation optimization, greatly improve design efficiency, and even shorten the development cycle and reduce costs.

The Lateral Metalation of Isoxazolo[3,4-d]pyridazinones towards Hit-to-Lead Development of Selective Positive Modulators of Metabotropic Glutamate Receptors.

Isoxazolo[3,4-d] pyridazinones ([3,4-d]s) were previously shown to have selective positive modulation at the metabotropic glutamate receptor (mGluR) Subtypes 2 and 4, with no functional cross-reactivity at mGluR1a, mGluR5, or mGluR8. Additional analogs were prepared to access more of the allosteric pocket and achieve higher binding affinity, as suggested by homology modeling. Two different sets of analogs were generated. One uses the fully formed [3,4-d] with an N6-aryl with and without halogens. These underwent successful selective lateral metalation and electrophilic quenching (LM&EQ) at the C3 of the isoxazole. In a second set of analogs, a phenyl group was introduced at the C4 position of the [3,4-d] ring via a condensation of 4-phenylacetyl-3-ethoxcarbonyl-5-methyl isoxazole with the corresponding hydrazine to generate the 3,4-ds 2b and 2j to 2n.

Study of ultra-low specific on-resistance and high breakdown voltage SOI LDMOS based on electron accumulation effect

A novel stepped L-shaped trench gate silicon-on-insulator (SOI) lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with N-pillar (SLTGN-LDMOS) is proposed. SLTGN-LDMOS contains a highly doped N-pillar, assisting in reducing the specific on-resistance (R on,sp). The stepped L-shaped trench gate (SLTG) attracts electrons to attach to the edge of the trench, thus directing more current to flow along the edge, which decreases R on,sp effectively. Furthermore, new electric field peaks are generated on the surface of the drift region, thus increasing the breakdown voltage (BV). As a result, compared with the conventional structure (C-LDMOS), the BV of SLTGN-LDMOS increases from 63 V to 162.7 V, and the R on,sp decreases from 1.85 mΩ·cm2 to 1.46 mΩ·cm2. Then, the figure of merit (FOM1, BV2 /R on.sp) increases remarkably from 2.15 MW·cm−2 to 18.13 MW·cm−2. In addition, the maximum surface temperature of SLTGN-LDMOS is 395.3 K, slightly lower than the 398.7 K of C-LDMOS.

Development of Cold‐Rolling Edge‐Drop Control Technology for Electrical Steel: A Review

As an emerging technology in the production of electrical steel, edge‐drop control (EDC) caters to the increasing requirements for the overall shape quality of strips. Herein this review, the development of EDC theory, method, and control system used in the cold‐rolling process is summarized. Also, in this review, research on EDC theory is found to be based on the 3D plastic deformation model of the strip, considering the lateral metal flow. Further, an analytical model and a numerical calculation method are employed to establish an edge‐drop calculation model with high accuracy and speed. Next, taper‐work‐roll shifting (T‐WRS), a conventional EDC technology, is found to have been greatly improved in actual production. However, T‐WRS technology involves coupling problems in terms of edge drop and crown and flatness control. Finally, the closed‐loop EDC is found to depend on the online WRS of multiple stands. Particularly, the genetic law of strip thickness in the continuous rolling process and the edge‐drop regulation characteristics of each stand in the continuous rolling mill are significant aspects; thus, a reasonable roll‐shifting control strategy must be formulated. Based on the reviewed research, the development prospect of EDC is characterized.

Elucidating atomistic mechanisms of the formation of phase-controlled ultrathin MoTe2 films and lateral hetero-phase MoTe2 interfaces

Molybdenum ditelluride (MoTe2) is gaining great attention because of its phase tunability. However, the precise control of the phase of ultrathin MoTe2 films is quite challenging, and the atomistic mechanism has not been fully elucidated. Here, we establish phase-controlled growth of ultrathin MoTe2 films by independently adjusting the Te atomic flux. We employed a chemical vapor deposition method that uses Mo nanolayers as a precursor to synthesize ultrathin MoTe2 films with a thickness of 4 − 7 nm. We found that ultrathin 1T’ MoTe2 films were formed with low Te atomic flux, whereas ultrathin 2H MoTe2 films were obtained with high Te atomic flux. Lateral metal–semiconductor hetero-phase 1T’/2H MoTe2 ultrathin films with seamless interfaces were synthesized with medium Te atomic flux. Furthermore, we performed density functional theory calculations to elucidate the detailed mechanisms of the phase transition between 1T’ and 2H MoTe2 driven by Te vacancy as well as the property of the 1T’/2H MoTe2 interface. This work provides a full understanding of the formation of phase-controlled ultrathin MoTe2 films and lateral metal–semiconductor hetero-phase MoTe2 interfaces.

SOI LDMOS With High-k Multi-Fingers to Modulate the Electric Field Distributions

The silicon-on-insulator (SOI) lateral double-diffused metal–oxide–semiconductor (LDMOS) with high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{k}$</tex-math> </inline-formula> multi-fingers (HKMFs) is proposed and investigated. The fingertips are distributed at specific locations to modulate the electric field distributions and improve the device performances. First, the electric field peaks formed at the fingertips could optimize the electric field distributions, which improves the breakdown voltage (BV) of the LDMOS effectively. Meanwhile, the multi-fingers are embedded into the drift region to increase the optimal drift doping concentration, which facilitates the positive conduction of the device and reduces the specific ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{R}_{\text{on,\text{sp}}}\text{)}$</tex-math> </inline-formula> . The simulation results show that the proposed HKMF-LDMOS with five multi-fingers increases the BV by 59.2%, reduces <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{R}_{\text{on,\text{sp}}}$</tex-math> </inline-formula> by 37.8%, and improves the figure of merit (FOM) by 4.07 times when compared to the conventional LDMOS.

All-optical control of high-purity trions in nanoscale waveguide

The generation of high-purity localized trions, dynamic exciton–trion interconversion, and their spatial modulation in two-dimensional (2D) semiconductors are building blocks for the realization of trion-based optoelectronic devices. Here, we present a method for the all-optical control of the exciton-to-trion conversion process and its spatial distributions in a MoS2 monolayer. We induce a nanoscale strain gradient in a 2D crystal transferred on a lateral metal–insulator–metal (MIM) waveguide and exploit propagating surface plasmon polaritons (SPPs) to localize hot electrons. These significantly increase the electrons and efficiently funnel excitons in the lateral MIM waveguide, facilitating complete exciton-to-trion conversion even at ambient conditions. Additionally, we modulate the SPP mode using adaptive wavefront shaping, enabling all-optical control of the exciton-to-trion conversion rate and trion distribution in a reversible manner. Our work provides a platform for harnessing excitonic quasiparticles efficiently in the form of trions at ambient conditions, enabling high-efficiency photoconversion.

New Insight Into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation

In this article, the concept of irradiation charge field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {rc}}$ </tex-math></inline-formula> ) is proposed to provide a new insight into total-ionizing-dose (TID) effect-induced breakdown voltage (BV) degradation for high-voltage silicon-on-insulator (SOI) lateral double-diffused metal–oxide-silicon (LDMOS). A unified explanation on TID-induced BV degradation is given that <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {rc}}$ </tex-math></inline-formula> exerts modulation on net electric field, changing the relationship between lateral BV (BVL) and vertical BV (BVV). <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {rc}}$ </tex-math></inline-formula> would weaken electric field at silicon side of silicon/buried oxide interface and enhance that at oxide side, resulting in BVV increasing monotonously. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {rc}}$ </tex-math></inline-formula> would also weaken surface electric field at drain side and enhance that at source side, resulting in BVL changing with two potential trends: monotonic descent and nonmonotonic descent, corresponding to different initial surface breakdown points. Eventual BV degradation is determined by the combined result of BVV and BVL changing. Based on the new insight, a radiation hardening design strategy is proposed. Nonuniform initial surface electric field distribution with single drain peak is pursued, breaking the conventional optimization principle. Nonmonotonic descent of BV is achieved to enhance TID tolerance and verified by the developed 80-V SOI LDMOS with the proposed radiation hardening strategy.

Ultrathin All-2D Lateral Diodes Using Top and Bottom Contacted Laterally Spaced Graphene Electrodes to WS2 Semiconductor Monolayers

The ultrathin nature of two-dimensional (2D) materials opens up opportunities for creating devices that are substantially thinner than using traditional bulk materials. In this article, monolayer 2D materials grown by the chemical vapor deposition method are used to fabricate ultrathin all-2D lateral diodes. We show that placing graphene electrodes below and above the WS2 monolayer, instead of the same side, results in a lateral device with two different Schottky barrier heights. Due to the natural dielectric environment, the bottom graphene layer is wedged between the WS2 and the SiO2 substrate, which has a different doping level than the top graphene layer that is in contact with WS2 and air. The lateral separation of these two graphene electrodes results in a lateral metal-semiconductor-metal junction with two asymmetric barriers but yet retains its ultrathin form of two-layer thickness. The rectification and diode behavior can be exploited in transistors, photodiodes, and light-emitting devices. We show that the device exhibits a rectification ratio up to 90 under a laser power of 1.37 μW at a bias voltage of ±3 V. We demonstrate that both the back-gate voltage and laser illumination can tune the rectification behavior of the device. Furthermore, the device can generate strong red electroluminescence in the WS2 area across the two graphene electrodes under an average flowing current of 2.16 × 10-5 A. This work contributes to the current understanding of the 2D metal-semiconductor heterojunction and offers an idea to obtain all-2D Schottky diodes by retaining the ultrathin device concept.

Analysis of single event effects by heavy ion irradiation of Ga2O3 metal–oxide–semiconductor field-effect transistors

The model of lateral β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) was established using Sentaurus Technology Computer Aided Design software. The gate-to-drain distance of the device was 13.7 μm, and the breakdown voltage was 1135 V. The single event effect simulation model caused by heavy ion irradiation was introduced, and the effects of heavy ions’ incident position, angle, drain bias voltage, and linear energy transfer on the single event effect were studied. It is found that x = 7.7 μm is the sensitive location of the single event effect at the gate corner near the drain side and the peak value of the transient current is 177 mA/mm. The effect of the terminal structure of the field plate on the transient effect of the single event effect of β-Ga2O3 MOSFET is studied. It is also found that the sensitive position of the single event effect of the conventional structure, gate-field plate structure, and gate–source composite field plate structure is around x = 7.7 μm when VDS = 10 V. The peak transient currents obtained are 177, 161, and 148 mA/mm. The single event effect pulse current of the three structures increases with an increase in the drain bias voltage, while the peak pulse current of the conventional structure is larger than that of the gate-field plate structure and the gate–source composite structure. The research shows that the terminal structure of the field plate is reliable means to reduce the single particle effect.

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Lateral type n-channel 4H-SiC metal--oxide--semiconductor field effect transistors (MOSFETs), fabricated using a current industrial process, are irradiated with gamma rays at different irradiation doses in this paper to carry out a profound study on the generation mechanism of radiation-induced interface traps and oxide trapped charges. Electrical parameters (e.g., threshold voltage, subthreshold swing and channel mobility) of the device before and after irradiation are investigated, and the influence of the channel orientation ( and ) on the radiation effect is discussed for the first time. A positive threshold voltage shift is observed at very low irradiation doses (< 100 krad (Si)); the threshold voltage then shifts negatively as the dose increases. It is found that the dependence of interface trap generation on the radiation dose is not the same for doses below and above 100 krad. For irradiation doses < 100 krad, the radiation-induced interface traps with relatively high generation speeds dominate the competition with radiation-induced oxide trapped charges, contributing to the positive threshold voltage shift correspondingly. All these results provide additional insight into the radiation-induced charge trapping mechanism in the SiO2/SiC interface.